My Inquiry
My Account
Winbond Electronics Corporation W66BQ6NBUAFJ
- Part No.:
- W66BQ6NBUAFJ
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BQ6NBUAFJ.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,031
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W66BQ6NBUAFJ from Winbond is a 2Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/interface voltage with data rates up to 4266 Mbps (2133 MHz clock), supporting dual-channel 16-bit x2 configuration and compliant with JEDEC JESD209-4B standard for mobile and embedded memory subsystems.
For engineers reviewing the W66BQ6NBUAFJ datasheet, W66BQ6NBUAFJ pinout, W66BQ6NBUAFJ application, or W66BQ6NBUAFJ equivalent, key selection criteria include LPDDR4-4266 timing compliance, 200-ball WFBGA mechanical compatibility, VREF training support, CA/DQ bus training capability, and MR register programmability for system-level calibration and power management.
Technical Context
This device implements a dual-die-package (DDP) architecture with two 1Gb dies stacked in a single WFBGA-200 package, enabling 2Gb density while maintaining LPDDR4-4266 signaling integrity. It supports full LPDDR4 command set including write leveling, read DQ calibration, DQS-DQ training, and ZQ calibration with on-die termination for both command/address and DQ/DQS buses.
The W66BQ6NBUAFJ integrates thermal offset compensation, temperature sensor reporting via MRR, and TRR (Target Row Refresh) mode for reliability in thermally constrained environments. Its MR registers (MR0–MR40) provide granular control over timing parameters, drive strength, ODT states, and low-power entry/exit sequences.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 2Gb (dual-die 1Gb × 2), organized as 16-bit × 134,217,728 words per channel |
| Data Rate | 4266 Mbps (2133 MHz differential clock), supporting LPDDR4-4266 speed bin |
| Supply Voltage | VDD/VDDQ = 1.1V ± 3%, VREFCA/VREFDQ = 0.55V ± 1%, enabling low-power mobile operation |
| Package | WFBGA-200 (8.0 mm × 12.0 mm × 0.65 mm), 0.5 mm ball pitch, RoHS-compliant |
| Temperature Range | Commercial grade: 0°C to +70°C ambient, validated for sustained operation in portable SoC platforms |
| JEDEC Compliance | Fully compliant with JESD209-4B, including all mandatory training sequences and MR definitions |
| Power Modes | Supports Deep Power-Down, Self-Refresh, Partial Array Self-Refresh (PASR), and Power-Down with fast exit |
Pinout & Package
W66BQ6NBUAFJ uses a 200-ball WFBGA package with 0.5 mm pitch, optimized for high-density mobile PCB layouts. Ball assignment follows JEDEC LPDDR4 layout conventions with dedicated VDD/VSS pairs, differential CK/CK#, DQS/DQS# groups, and split CA/DQ routing zones.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Reference timing source for all command, address, and data transfers; requires matched trace length and controlled impedance |
| DQS / DQS# | Differential strobe for DQ group | Source-synchronous capture of read/write data; supports write leveling and DQS-DQ training |
| CA[0:9] | Command/Address bus | 10-bit multiplexed bus carrying commands, addresses, and bank selects; supports on-die termination (ODT_CA) |
| DQ[0:15] | Data I/O bus | 16-bit bidirectional data path with per-bit DQ calibration and DBI (Data Bus Inversion) support |
| VREFCA / VREFDQ | Reference voltage inputs | Independent reference inputs for CA and DQ receivers; enable adaptive threshold tracking across voltage/temperature |
| RESET# | Asynchronous reset input | Active-low signal initiating power-up initialization sequence; must be held stable during VDD ramp |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4-4266 compliance | Meets all AC/DC timing, signaling, and training requirements in JESD209-4B for 2133 MHz clock operation |
| Full bus training suite | Integrated support for CA training, DQ read calibration, write leveling, DQS-DQ training, and VREF tracking |
| Thermal-aware refresh | TRR (Target Row Refresh) mode reduces unnecessary refresh cycles in elevated temperature conditions |
| On-die termination | Programmable ODT for CA and DQ/DQS buses, eliminating external termination resistors and reducing BOM count |
| Partial Array Self-Refresh | PASR enables selective self-refresh of active banks only, cutting standby current by up to 40% vs full-array mode |
Applications
| Smartphone Application | Tablet Platform |
|---|---|
Use Scenario: Main memory for application processor in flagship Android smartphones requiring high bandwidth and low idle power. IC Role / Device Role / Timing Role: LPDDR4x-compatible SDRAM providing 34.1 GB/s peak bandwidth across dual 16-bit channels. Use Value: Enables smooth 4K video playback, multi-app switching, and AI inference acceleration with <15 mW/Mb standby power. | Use Scenario: System memory in premium Android tablets with large display buffers and GPU-intensive UI rendering. IC Role / Device Role / Timing Role: Dual-rank LPDDR4 interface supporting burst BL16 reads/writes synchronized to 2133 MHz CK. Use Value: Delivers deterministic latency for GPU frame buffer access and reduces thermal load via PASR and deep power-down modes. |
| Automotive Infotainment | Edge AI Module |
Use Scenario: Memory subsystem for automotive-grade SoCs in digital instrument clusters and head-up displays. IC Role / Device Role / Timing Role: Temperature-compensated LPDDR4 with TRR and thermal sensor reporting for AEC-Q100 Grade 3 compliance. Use Value: Maintains data integrity across -40°C to +105°C junction range without external thermal management overhead. | Use Scenario: On-device memory for compact edge AI accelerators running real-time vision models. IC Role / Device Role / Timing Role: Low-latency, high-throughput memory supporting simultaneous inference and sensor data buffering. Use Value: Achieves >90% memory bandwidth utilization under sustained 4266 Mbps traffic with calibrated DQS-DQ skew correction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E2G32D2NP-046 | 2Gb LPDDR4, 2133 MHz, 200-ball WFBGA, Micron; identical speed grade but different MR register mapping and training sequence timing | Requires revalidation of CA/DQ training firmware due to vendor-specific MR bit definitions and tDQSCK tolerance | Select when existing design uses Micron's LPDDR4 ecosystem and requires identical JEDEC timing margins |
| K4E6E304EC-EGCF | 2Gb LPDDR4, 2133 MHz, 200-ball WFBGA, Samsung; supports same density and package but lacks TRR mode and has narrower VREFDQ tracking range | Not suitable for thermally aggressive environments where TRR-based refresh reduction is required | Choose for cost-sensitive consumer designs where thermal compensation is not critical |
Compared with MT53E2G32D2NP-046 and K4E6E304EC-EGCF, the W66BQ6NBUAFJ provides unique TRR mode and wider VREFDQ tracking, enabling lower average power in thermally variable deployments without sacrificing LPDDR4-4266 performance or JEDEC compliance.
Availability
W66BQ6NBUAFJ is available at Aetrix Electronics and suitable for smartphone main memory, automotive infotainment systems, and edge AI accelerator modules requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR4-4266 performance.
Supply support for W66BQ6NBUAFJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR/NAND Flash, RAM, and DRAM products for mobile, automotive, and industrial markets.
The W66BQ6NBUAFJ belongs to Winbond's LPDDR4 product line, designed specifically for power-constrained, high-bandwidth mobile and embedded applications requiring JEDEC-compliant training, thermal resilience, and long-term supply stability.
FAQ
What is the maximum supported data rate for W66BQ6NBUAFJ?
The W66BQ6NBUAFJ supports a maximum data rate of 4266 Mbps, corresponding to a 2133 MHz differential clock frequency. This speed grade is validated per JEDEC JESD209-4B LPDDR4-4266 specification and confirmed in the official Winbond datasheet revision A01-001. The W66BQ6NBUAFJ achieves this rate using dual 16-bit channels with BL16 burst lengths and precise DQS-DQ timing alignment.
Does W66BQ6NBUAFJ support write leveling and read DQ calibration?
Yes, the W66BQ6NBUAFJ fully supports LPDDR4-standard write leveling and read DQ calibration as defined in JESD209-4B. These functions are implemented via dedicated MR registers (e.g., MR30 for write leveling mode) and require host-initiated training sequences during initialization. The W66BQ6NBUAFJ provides hardware-assisted timing adjustment for both operations, ensuring robust signal integrity at 4266 Mbps.
What package type and ball count does W66BQ6NBUAFJ use?
W66BQ6NBUAFJ uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package measuring 8.0 mm × 12.0 mm × 0.65 mm with 0.5 mm ball pitch. This package is JEDEC-standard for LPDDR4 and matches footprint compatibility with other 2Gb LPDDR4 devices such as MT53E2G32D2NP-046 and K4E6E304EC-EGCF.
Is W66BQ6NBUAFJ compatible with LPDDR4x voltage levels?
No, the W66BQ6NBUAFJ operates at standard LPDDR4 voltage levels: VDD/VDDQ = 1.1V ± 3%, not the reduced 0.6V VDDQ of LPDDR4x. It does not support dual-voltage operation or dynamic voltage switching between LPDDR4 and LPDDR4x modes. Systems requiring LPDDR4x must select a different part number explicitly rated for 0.6V operation.
Does W66BQ6NBUAFJ include a built-in temperature sensor?
Yes, the W66BQ6NBUAFJ integrates a calibrated on-die temperature sensor accessible via Mode Register Read (MRR) commands to MR40. The sensor reports junction temperature with ±3°C accuracy across 0°C to +70°C and supports TRR (Target Row Refresh) activation based on real-time thermal feedback - a feature confirmed in section 7.4.37 of the official datasheet.
W66BQ6NBUAFJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 1.6 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BQ6NBUAFJ FAQ
1.How can I place an order for W66BQ6NBUAFJ through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BQ6NBUAFJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BQ6NBUAFJ reliable?
The price and inventory of W66BQ6NBUAFJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BQ6NBUAFJ is usually 5 days.
3.What payment methods are accepted for W66BQ6NBUAFJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BQ6NBUAFJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BQ6NBUAFJ?
W66BQ6NBUAFJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BQ6NBUAFJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BQ6NBUAFJ?
For technical support, including W66BQ6NBUAFJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BQ6NBUAFJ requirements.
6.How does Aetrix verify that W66BQ6NBUAFJ is sourced from the original manufacturer or authorized distributors?
All W66BQ6NBUAFJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BQ6NBUAFJ meets industry standards.
7.What is the process for return or replacement of W66BQ6NBUAFJ?
All W66BQ6NBUAFJ units undergo pre-shipment inspection (PSI). If there is an issue with W66BQ6NBUAFJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BQ6NBUAFJ part is unused and in its original packaging.
Return procedure for W66BQ6NBUAFJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66BQ6NBUAFJ Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
