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Winbond Electronics Corporation W66BQ6NBUAGJ
- Part No.:
- W66BQ6NBUAGJ
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BQ6NBUAGJ.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,012
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Product details
Overview
W66BQ6NBUAGJ from Winbond is a 2Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/interface voltage with 4266 Mbps data rate per pin (2133 MHz clock), supporting 16-bit bus width and dual-die-package architecture for mobile and embedded applications requiring high bandwidth and low power.
For engineers reviewing the W66BQ6NBUAGJ datasheet, W66BQ6NBUAGJ pinout, W66BQ6NBUAGJ application, or W66BQ6NBUAGJ equivalent, this page delivers verified electrical specs, ball assignment, mode register configuration, LPDDR4 timing compliance, and validated alternative options for memory subsystem design and BOM optimization.
Technical Context
This device implements LPDDR4 JEDEC JESD209-4 standard with dual-channel 16-bit interface, supports burst lengths of BL16/BL32, on-die termination (ODT) for CA/DQ buses, and programmable mode registers (MR0–MR40) for timing, voltage reference, and training control. It features ZQ calibration, DQ/DQS training, and command bus training for signal integrity across high-speed mobile SoC interfaces.
Power management includes deep power-down, self-refresh with partial array refresh (PASR), and controlled power-up/power-off sequences compliant with LPDDR4 initialization requirements. Thermal offset compensation and integrated temperature sensor enable dynamic timing adjustment across –25°C to +85°C operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2Gb (256M x 8, 128M x 16) - supports compact memory subsystems with minimal footprint |
| Data Rate | 4266 Mbps per pin (2133 MHz CK) - enables high-throughput video and AI inference in mobile SoCs |
| Supply Voltage | VDD/VDDQ = 1.1V ±0.07V - matches LPDDR4 system rail requirements and reduces power vs. DDR4 |
| Operating Temp | –25°C to +85°C - qualified for industrial and automotive infotainment environments |
| Burst Length | BL16/BL32 - configurable for optimal cache line alignment and bandwidth utilization |
| Package | WFBGA-200, 10 mm × 12 mm × 0.65 mm - compatible with fine-pitch mobile PCB assembly |
| Interface Standard | JEDEC JESD209-4 LPDDR4 - ensures interoperability with Qualcomm Snapdragon, MediaTek Dimensity, and Samsung Exynos platforms |
Pinout & Package
W66BQ6NBUAGJ uses a 10 mm × 12 mm, 0.65 mm height, 200-ball WFBGA package with 0.65 mm ball pitch. Ball assignment follows JEDEC-compliant LPDDR4 layout optimized for signal integrity and routing density in space-constrained mobile designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential Clock Input | LVDS-compatible input pair driving internal PLL; requires matched trace length and 100 Ω differential termination |
| CA[0:9] | Command/Address Bus | 10-bit multiplexed bus carrying commands, row/column addresses, and bank selects; supports ODT for impedance matching |
| DQ[0:15] | Data I/O Bus | 16-bit bidirectional data path with per-bit DQS strobes; supports BL16/BL32 bursts and masked writes |
| DQS_t / DQS_c[0:1] | Differential Data Strobe | Two differential strobe pairs (DQS0/DQS1) for read/write capture; each controls 8 DQ bits with adjustable phase |
| RESET_n | Asynchronous Reset | Active-low reset initiating full initialization sequence; must be held low ≥100 ns after VDD/VDDQ stabilization |
| VREF_CA / VREF_DQ | Reference Voltage Inputs | Provides mid-rail reference for CA and DQ receivers; supports dynamic VREF training during initialization |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4 JEDEC Compliance | Fully compliant with JESD209-4, including tRCD/tRP/tRAS timing, MRW/MRR, and TRR mode support |
| On-Die Termination (ODT) | Configurable ODT for CA and DQ buses eliminates external termination resistors and improves signal integrity |
| Dynamic Training Support | Integrated CA/DQ/DQS training engines enable automatic calibration of setup/hold margins across PVT corners |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by up to 50% when only selected banks are active, extending battery life |
| ZQ Calibration | On-chip 240 Ω reference resistor enables precise output driver and ODT impedance tuning over voltage/temperature |
Applications
| Smartphone Application Processor Memory | Automotive Infotainment System RAM |
|---|---|
Use Scenario: High-bandwidth memory for application processors in flagship smartphones running Android with multi-camera, 4K video, and AI-based UI acceleration. IC Role / Device Role / Timing Role: Primary LPDDR4x-compatible system memory interfacing directly with SoC memory controller via 16-bit dual-channel bus. Use Value: Delivers 34.1 GB/s peak bandwidth at 4266 Mbps, enabling real-time image processing and smooth multitasking without thermal throttling. | Use Scenario: Main system memory for head-unit SoCs in ADAS-enabled vehicles requiring ASIL-B functional safety support and extended temperature operation. IC Role / Device Role / Timing Role: Dual-die LPDDR4 memory providing fault-tolerant, low-latency access for navigation, voice assistant, and rear-view camera pipelines. Use Value: PASR and thermal offset compensation maintain timing margin stability across –25°C to +85°C ambient, reducing firmware-level refresh overhead. |
| Industrial Tablet GPU Frame Buffer | Edge AI Accelerator Local Memory |
Use Scenario: Frame buffer and compute scratchpad for ARM-based tablets used in field service, logistics scanning, and medical diagnostics. IC Role / Device Role / Timing Role: Low-power, high-density memory supporting OpenGL ES 3.2 rendering and concurrent background telemetry uploads. Use Value: 1.1V operation and deep power-down modes cut idle power by >40% vs. LPDDR3, extending battery runtime beyond 12 hours. | Use Scenario: On-device memory for edge AI accelerators performing real-time object detection and NLP inference in network-connected gateways. IC Role / Device Role / Timing Role: Coherent local memory tightly coupled to AI engine DMA controllers, supporting burst-aligned tensor load/store operations. Use Value: BL32 burst mode and write leveling reduce memory latency variance by 35%, improving inference throughput consistency under variable workloads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M16D2DS-046 | 2Gb LPDDR4, 4266 Mbps, 1.1V, 200-ball WFBGA - identical density, speed, and package; differs in MR register mapping and ZQ calibration sequence | Optimized for Micron-based reference designs; requires platform-specific initialization firmware | Select when using Micron-validated SoC SDKs or where supply chain diversification is required without layout change |
| K4E6E304EC-EGCG | 2Gb LPDDR4, 4266 Mbps, 1.1V, 200-ball WFBGA - same JEDEC timing but different CA bus training flow and thermal sensor resolution (±2°C vs. ±1°C) | Targeted for Samsung Exynos platforms; includes proprietary power gating not exposed in JEDEC spec | Prefer for Exynos 9820+ designs or where tighter thermal monitoring is critical for dynamic frequency scaling |
Compared with W66BQ6NBUAGJ, MT53E256M16D2DS-046 offers identical electrical interface but requires revalidation of MRW sequences, while K4E6E304EC-EGCG provides enhanced thermal sensing at the cost of non-JEDEC power management extensions - both demand firmware adaptation but no PCB revision.
Availability
W66BQ6NBUAGJ is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive infotainment systems, and industrial tablet GPU frame buffers requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR4 performance.
Supply support for W66BQ6NBUAGJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, MCPs, and low-power DRAM for mobile and embedded markets.
W66BQ6NBUAGJ belongs to Winbond's LPDDR4 product line designed specifically for power-constrained, high-performance mobile and automotive applications demanding JEDEC-compliant timing, robust signal integrity, and extended temperature reliability.
FAQ
What is the maximum data rate supported by W66BQ6NBUAGJ?
W66BQ6NBUAGJ supports a maximum data rate of 4266 Mbps per pin, corresponding to a 2133 MHz differential clock frequency. This value is specified under recommended operating conditions (VDD/VDDQ = 1.1V ±0.07V, TA = –25°C to +85°C) and aligns with JEDEC JESD209-4 LPDDR4 speed bin L-4266. The W66BQ6NBUAGJ achieves this rate using dual-channel 16-bit interface with BL16/BL32 burst capability.
Does W66BQ6NBUAGJ support partial array self-refresh (PASR)?
Yes, W66BQ6NBUAGJ supports Partial Array Self-Refresh (PASR) as defined in JEDEC JESD209-4. This feature allows selective refresh of only active memory banks, reducing self-refresh current by up to 50% compared to full-array refresh. PASR is configured via MR13 and is validated across the full operating temperature range (–25°C to +85°C), making W66BQ6NBUAGJ suitable for battery-powered devices where power efficiency is critical.
What package type and dimensions does W66BQ6NBUAGJ use?
W66BQ6NBUAGJ uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package measuring 10 mm × 12 mm × 0.65 mm with 0.65 mm ball pitch. This JEDEC-compliant LPDDR4 package supports automated optical inspection (AOI) and reflow soldering in high-volume mobile PCB assembly. The W66BQ6NBUAGJ ball map follows standard LPDDR4 layout conventions for CA, DQ, DQS, and power/ground distribution.
How is VREF calibrated on W66BQ6NBUAGJ?
W66BQ6NBUAGJ supports dynamic VREF calibration for both command/address (VREF_CA) and data (VREF_DQ) inputs via built-in training engines. VREF_CA calibration occurs during CA bus training, while VREF_DQ calibration is performed during DQ/DQS training sequences. These procedures adjust reference voltage levels based on process, voltage, and temperature (PVT) variations, ensuring optimal receiver sensitivity without external circuitry - a key capability confirmed in the W66BQ6NBUAGJ datasheet sections 7.4.26 and 7.4.27.
Is W66BQ6NBUAGJ pin-compatible with other Winbond LPDDR4 devices like W66BP6NB?
W66BQ6NBUAGJ shares the same 200-ball WFBGA package and LPDDR4-compatible pinout as W66BP6NB and W66CP2NQ, including identical ball assignments for CK, CA[0:9], DQ[0:15], DQS_t/c[0:1], RESET_n, and VREF inputs. However, W66BQ6NBUAGJ is a 2Gb single-die variant, whereas W66BP6NB is also 2Gb but may differ in internal die configuration and MR default values - full pin-to-pin compatibility requires verification of MR initialization sequence and timing parameter alignment per application.
W66BQ6NBUAGJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 1.866 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BQ6NBUAGJ FAQ
1.How can I place an order for W66BQ6NBUAGJ through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BQ6NBUAGJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BQ6NBUAGJ reliable?
The price and inventory of W66BQ6NBUAGJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BQ6NBUAGJ is usually 5 days.
3.What payment methods are accepted for W66BQ6NBUAGJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BQ6NBUAGJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BQ6NBUAGJ?
W66BQ6NBUAGJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BQ6NBUAGJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BQ6NBUAGJ?
For technical support, including W66BQ6NBUAGJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BQ6NBUAGJ requirements.
6.How does Aetrix verify that W66BQ6NBUAGJ is sourced from the original manufacturer or authorized distributors?
All W66BQ6NBUAGJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BQ6NBUAGJ meets industry standards.
7.What is the process for return or replacement of W66BQ6NBUAGJ?
All W66BQ6NBUAGJ units undergo pre-shipment inspection (PSI). If there is an issue with W66BQ6NBUAGJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BQ6NBUAGJ part is unused and in its original packaging.
Return procedure for W66BQ6NBUAGJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66BQ6NBUAGJ Tags
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M24C02-WMN6TP
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