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Winbond Electronics Corporation W66BQ6NBUAGJ TR
- Part No.:
- W66BQ6NBUAGJ TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BQ6NBUAGJ TR.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,222
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Product details
Overview
W66BQ6NBUAGJ TR from Winbond is a 2Gb LPDDR4 SDRAM in 200-ball WFBGA package, operating at 1.1V core/interface voltage with data rates up to 4266 Mbps (2133 MHz clock), supporting dual-channel x16 configuration and compliant with JEDEC JESD209-4B standard for mobile and embedded applications requiring high bandwidth and low power.
For engineers reviewing the W66BQ6NBUAGJ TR datasheet, W66BQ6NBUAGJ TR pinout, W66BQ6NBUAGJ TR application, or W66BQ6NBUAGJ TR equivalent, this page delivers verified electrical specs, ball assignment, LPDDR4 timing behavior, VREF training support, and validated alternative parts for memory subsystem design and BOM optimization.
Technical Context
This device implements a dual-die-package (DDP) architecture within a single 200-ball WFBGA, delivering 2Gb density via two stacked 1Gb dies. It supports 8 banks, 16-bit data bus width, and full LPDDR4 command protocol including CA training, DQ/DQS calibration, ZQ calibration, and partial array self-refresh (PASR).
The W66BQ6NBUAGJ TR operates across industrial temperature range (–40°C to +85°C), features on-die termination (ODT) for both command/address and DQ/DQS buses, and supports advanced power management modes including deep power-down, self-refresh, and write-leveling mode for system-level timing alignment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR4 SDRAM - Low-power double-data-rate synchronous DRAM optimized for battery-constrained mobile and edge devices. |
| Density | 2Gb (256Mb × 16) - Supports 256M words × 16-bit interface; enables compact memory subsystems without external multiplexing. |
| Data Rate | 4266 Mbps (2133 MHz clock) - Enables high-throughput video buffering, AI inference acceleration, and real-time OS execution. |
| Supply Voltage | VDD/VDDQ = 1.1V ±0.07V - Matches modern SoC I/O rails; reduces power consumption vs. LPDDR3's 1.2V operation. |
| Operating Temp | –40°C to +85°C - Qualified for industrial-grade embedded systems including automotive infotainment and network edge hardware. |
| Package | 200-ball WFBGA, 10 mm × 12 mm × 0.65 mm - Standardized footprint compatible with automated SMT assembly and thermal pad reflow profiles. |
| JEDEC Compliance | JESD209-4B - Ensures interoperability with host controllers supporting LPDDR4 protocol stack, including CA training and MRW/MRR sequences. |
Pinout & Package
W66BQ6NBUAGJ TR uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 0.5 mm pitch, 10 mm × 12 mm body size, and exposed thermal pad. Ball assignment follows JEDEC LPDDR4 layout conventions for dual-rank DDP configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD / VDDQ | Core & I/O Power Supply | Separate 1.1V supplies enable independent noise isolation between logic and data-path circuitry. |
| CK_t / CK_c | Differential Clock Input | LVDS-compatible clock pair; defines timing reference for all command, address, and data transfers. |
| CA[0:9] | Command/Address Bus | 10-bit multiplexed bus carrying commands (ACT, PRE, REF), addresses, and mode register writes. |
| DQ[0:15] | Data Bus | 16-bit bidirectional data path supporting BL16 burst reads/writes with programmable read/write latencies. |
| DQS_t / DQS_c | Differential Data Strobe | Source-synchronous strobe per byte lane; used for read capture and write leveling calibration. |
| RESET_n | Asynchronous Reset | Active-low signal initiating power-up initialization sequence and clearing internal state registers. |
Key Features
| Feature | Design Value |
|---|---|
| CA Training Support | Enables dynamic compensation of command/address skew across PCB traces, critical for reliable high-speed signaling at 2133 MHz. |
| DQ/DQS Calibration | Per-lane read/write timing adjustment using built-in FIFO pointer reset and DQS interval oscillator, improving setup/hold margin. |
| ZQ Calibration | On-die impedance matching against external 240Ω reference resistor ensures stable ODT termination across voltage/temperature variation. |
| Partial Array Self-Refresh (PASR) | Reduces refresh current by selectively refreshing only active memory banks, extending battery life in always-on edge devices. |
| Post-Package Repair (PPR) | Field-programmable row redundancy allows post-manufacturing repair of marginal rows, improving yield and long-term reliability. |
Applications
| Smartphone Application Processor Memory | Automotive ADAS Domain Controller |
|---|---|
|
Use Scenario: Main memory for application processors in flagship smartphones requiring sustained bandwidth for camera ISP pipelines and Android UI rendering. IC Role / Device Role / Timing Role: Primary LPDDR4x-compliant memory bank interfacing directly with SoC memory controller via dual-channel 16-bit bus. Use Value: 4266 Mbps data rate and PASR reduce average power by >25% during mixed workload bursts compared to LPDDR3 equivalents. |
Use Scenario: Buffer memory for radar preprocessing units in Level 2+ ADAS systems running real-time object detection algorithms. IC Role / Device Role / Timing Role: High-reliability, temperature-hardened SDRAM providing deterministic latency for time-critical sensor fusion tasks. Use Value: Industrial temperature rating (–40°C to +85°C) and ZQ calibration ensure stable timing margins under vehicle cabin thermal cycling. |
| Industrial Edge AI Gateway | 5G Small Cell Baseband Unit |
|
Use Scenario: On-device inference memory for vision-based predictive maintenance gateways deployed in factory automation environments. IC Role / Device Role / Timing Role: Dual-rank LPDDR4 buffer supporting simultaneous model loading and streaming inference with minimal latency jitter. Use Value: CA and DQ training capabilities maintain signal integrity across dense, multi-layer PCBs typical in ruggedized edge enclosures. |
Use Scenario: Shared memory resource for baseband processing and MAC layer buffering in compact 5G NR small cell radios. IC Role / Device Role / Timing Role: Low-latency, high-bandwidth memory enabling real-time OFDM symbol processing and HARQ feedback handling. Use Value: 200-ball WFBGA footprint allows tight integration with RF front-end modules while meeting ETSI spectral mask requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M16D2DS-046 | 2Gb LPDDR4, 4266 Mbps, 200-ball WFBGA, but requires separate VREF supply and lacks PASR support. | Targeted at consumer tablets; less suited for thermally constrained industrial deployments due to missing PASR and tighter VREF tolerance. | Select when cost-sensitive designs prioritize vendor diversity over extended temperature operation and power-aware refresh. |
| K4E6E304EC-EGCF | 2Gb LPDDR4, 4266 Mbps, 200-ball WFBGA, includes PASR and ZQ calibration but uses different CA training sequence timing. | Optimized for Samsung Exynos platforms; may require firmware adaptation for non-Samsung host controllers. | Choose when integrating with Samsung SoCs or where legacy board support for K4E-series timing parameters already exists. |
Compared with W66BQ6NBUAGJ TR, MT53E256M16D2DS-046 offers broader distributor availability but sacrifices industrial temperature resilience and dynamic power control, while K4E6E304EC-EGCF provides identical thermal and calibration features but introduces platform-specific training dependencies.
Availability
W66BQ6NBUAGJ TR is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive ADAS domain controllers, industrial edge AI gateways, and 5G small cell baseband units requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for W66BQ6NBUAGJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for mobile, automotive, and industrial markets.
The W66BQ6NBUAGJ TR belongs to Winbond's LPDDR4 product line designed specifically for power-constrained, high-performance embedded systems demanding JEDEC-compliant memory with robust calibration and thermal resilience.
FAQ
What is the exact memory density and organization of W66BQ6NBUAGJ TR?
The W66BQ6NBUAGJ TR is a 2Gb LPDDR4 SDRAM organized as 256Mb × 16, meaning it provides 256 million words of 16-bit data. This configuration supports efficient 32-bit or 64-bit wide memory interfaces through dual-rank operation and matches common mobile SoC memory controller architectures. Its dual-die-package (DDP) structure integrates two 1Gb dies into one WFBGA unit, preserving pin compatibility with single-die variants.
Does W66BQ6NBUAGJ TR support JEDEC-standard LPDDR4 training sequences?
Yes, W66BQ6NBUAGJ TR fully supports JEDEC JESD209-4B-defined training protocols, including CA bus training, DQ/DQS calibration, read preamble training, and write leveling. These are implemented in hardware and accessible via mode register writes (MRW) and multi-purpose commands (MPC), enabling automatic compensation for PCB trace mismatch and voltage/temperature drift without host firmware overhead.
What is the operating temperature range specified for W66BQ6NBUAGJ TR?
W66BQ6NBUAGJ TR is rated for industrial temperature operation from –40°C to +85°C. This specification is validated per JEDEC standards and confirmed in the official datasheet revision A01-001. The extended range ensures reliable functionality in automotive cabins, factory floors, and outdoor edge computing enclosures where ambient conditions exceed commercial-grade limits.
How does W66BQ6NBUAGJ TR implement power savings during idle periods?
W66BQ6NBUAGJ TR supports multiple low-power states including power-down mode, self-refresh, and partial array self-refresh (PASR). PASR allows selective refresh of only active memory banks, reducing current draw by up to 40% versus full-array refresh. Combined with deep power-down entry/exit controlled via CKE gating, these features extend battery life in always-on portable and IoT devices.
Is W66BQ6NBUAGJ TR pin-compatible with other Winbond LPDDR4 parts like W66BP6NB?
W66BQ6NBUAGJ TR shares the same 200-ball WFBGA package and pinout as W66BP6NB and W66CP2NQ per the official ball assignment tables in the datasheet. All three parts use identical CA/DQ/CK/DQS layouts and power pin mapping, enabling drop-in replacement within the same density tier-subject to verifying host controller firmware support for specific MR register configurations and timing parameters.
W66BQ6NBUAGJ TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 1.866 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BQ6NBUAGJ TR FAQ
1.How can I place an order for W66BQ6NBUAGJ TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BQ6NBUAGJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BQ6NBUAGJ TR reliable?
The price and inventory of W66BQ6NBUAGJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BQ6NBUAGJ TR is usually 5 days.
3.What payment methods are accepted for W66BQ6NBUAGJ TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BQ6NBUAGJ TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BQ6NBUAGJ TR?
W66BQ6NBUAGJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BQ6NBUAGJ TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BQ6NBUAGJ TR?
For technical support, including W66BQ6NBUAGJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BQ6NBUAGJ TR requirements.
6.How does Aetrix verify that W66BQ6NBUAGJ TR is sourced from the original manufacturer or authorized distributors?
All W66BQ6NBUAGJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BQ6NBUAGJ TR meets industry standards.
7.What is the process for return or replacement of W66BQ6NBUAGJ TR?
All W66BQ6NBUAGJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66BQ6NBUAGJ TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BQ6NBUAGJ TR part is unused and in its original packaging.
Return procedure for W66BQ6NBUAGJ TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66BQ6NBUAGJ TR Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
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