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Winbond Electronics Corporation W66BQ6NBUAHJ
- Part No.:
- W66BQ6NBUAHJ
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BQ6NBUAHJ.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,392
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Product details
Overview
W66BQ6NBUAHJ from Winbond is a 2Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/VDDQ with 4266 Mbps data rate per pin (2133 MHz clock), supporting 16-bit bus width and dual-die-package (DDP) architecture for mobile application processors requiring high bandwidth and low power. It implements LPDDR4 standard JESD209-4B with on-die termination, ZQ calibration, and multi-purpose command (MPC) support.
For engineers reviewing the W66BQ6NBUAHJ datasheet, W66BQ6NBUAHJ pinout, W66BQ6NBUAHJ application, or W66BQ6NBUAHJ equivalent, key selection considerations include its DDP configuration, 1.1V I/O voltage compliance, tRCD/tRP = 24ns timing, CA/DQ VREF training capability, and support for partial array self-refresh (PASR) in battery-constrained portable systems.
Technical Context
This device implements a dual-die-package (DDP) architecture where two 1Gb dies share a single 200-ball WFBGA footprint, enabling 2Gb density without increasing board area. It supports LPDDR4-specific features including write-leveling, read DQ calibration, DQS interval oscillator, and command bus training for signal integrity at 2133 MHz.
The memory uses 8 banks per die, 16-bit prefetch, and supports burst lengths of BL16/BL32. Its mode register set (MR0–MR40) enables fine-grained control over refresh, thermal offset, TRR (target row refresh), and post-package repair (PPR), all critical for automotive and industrial SoC integration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR4 SDRAM - Low-power double-data-rate interface compliant with JEDEC JESD209-4B. |
| Capacity | 2Gb (256Mb × 8 × 2 banks × 2 dies) - DDP configuration delivers full density in single-package footprint. |
| Data Rate | 4266 Mbps per pin (2133 MHz clock) - Enables >34 GB/s aggregate bandwidth on 16-bit bus. |
| Supply Voltage | VDD/VDDQ = 1.1V ±0.07V - Matches modern AP SoC I/O rails; eliminates level-shifting in mobile designs. |
| tRCD / tRP | 24 ns (min) - Defines minimum row-to-column and row-precharge delays at max speed; impacts memory controller latency tuning. |
| Operating Temp | -25°C to +85°C - Industrial-grade temperature range suitable for embedded and automotive infotainment modules. |
| Package | WFBGA-200, 10 mm × 12 mm × 0.65 mm - Standardized footprint compatible with LPDDR4 layout guidelines and reflow profiles. |
Pinout & Package
W66BQ6NBUAHJ is housed in a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 0.65 mm ball pitch, designed for high-density mobile PCBs. Pin assignment follows JEDEC-standard LPDDR4 ball mapping for DDP configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD / VDDQ | Core & I/O Power Supply | Dual 1.1V supplies; separate VDDQ allows independent noise management for DQ signals. |
| CK_t / CK_c | Differential Clock Input | LVDS-compatible clock pair; defines system timing reference with 2133 MHz max frequency. |
| CA[0:9] | Command/Address Bus | 10-bit multiplexed bus carrying commands, addresses, and bank selects; supports on-die termination (ODT_CA). |
| DQ[0:15] | Data I/O Bus | 16-bit bidirectional data path with per-bit DQS strobes; supports BL16/BL32 bursts and masked writes. |
| DQS_t / DQS_c | Differential Data Strobe | Source-synchronous strobe per byte lane; enables precise read/write capture timing at 4266 Mbps. |
| RESET_n | Asynchronous Reset | Active-low global reset; initiates power-up initialization sequence and clears internal state. |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces refresh current by up to 50% when only subset of memory banks are active-critical for battery life extension. |
| CA/DQ VREF Training | Automated calibration of reference voltage for command/address and data buses-ensures robust signal integrity across voltage/temperature corners. |
| Write-Leveling & RD DQ Calibration | Per-lane delay adjustment for DQS-to-DQ alignment and read sampling point optimization-enables reliable operation at 4266 Mbps. |
| Post-Package Repair (PPR) | Field-programmable row redundancy via MPC command-improves yield and long-term reliability without hardware redesign. |
| Target Row Refresh (TRR) | Dynamic refresh targeting of vulnerable rows under elevated temperature-mitigates retention failure in automotive environments. |
Applications
| Smartphone Application Processor Memory | Automotive Infotainment System RAM |
|---|---|
|
Use Scenario: Main system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) in flagship smartphones. IC Role / Device Role / Timing Role: Primary LPDDR4x-compliant working memory interfacing directly with CPU/GPU memory controllers via 16-bit bus. Use Value: Delivers 34 GB/s bandwidth at 1.1V, enabling smooth 4K video playback, AI inference acceleration, and multitasking with minimal power draw. |
Use Scenario: Onboard RAM for head-unit SoCs running Android Automotive OS or QNX in digital instrument clusters and IVI systems. IC Role / Device Role / Timing Role: High-reliability system memory supporting real-time graphics rendering, navigation map caching, and voice assistant buffering. Use Value: PASR and TRR features reduce thermal leakage and extend data retention at 85°C ambient-meeting AEC-Q200 stress requirements. |
| Industrial Edge AI Gateway Memory | Medical Portable Imaging Buffer |
|
Use Scenario: Local inference buffer in compact edge AI gateways performing real-time object detection on camera feeds. IC Role / Device Role / Timing Role: Low-latency, high-throughput memory for CNN weight loading and feature map storage during model execution. Use Value: DDP architecture provides 2Gb density in space-constrained 10×12 mm footprint-enabling fanless, sealed enclosure designs. |
Use Scenario: Frame buffer and DICOM image preprocessing memory in handheld ultrasound or dermatology imaging devices. IC Role / Device Role / Timing Role: Burst-capable memory supporting rapid acquisition of high-resolution sensor data and real-time FFT processing. Use Value: ZQ calibration and ODT ensure signal integrity across variable cable lengths and EMI-prone clinical environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E2G32D2NP-046 WT:A (Micron) | 2Gb LPDDR4, 2133 MHz, WFBGA-200, but rated for -30°C to +95°C and includes built-in ECC support. | Better suited for extended-temperature industrial or automotive ADAS modules requiring error correction. | Select when ECC or wider temp range is mandatory; W66BQ6NBUAHJ lacks ECC and has narrower spec. |
| K4E6E304EC-EGCF (Samsung) | 2Gb LPDDR4, same 2133 MHz speed and WFBGA-200, but uses single-die-package (SDP); no PASR or TRR support. | Lower cost for consumer tablets where thermal management is less stringent and refresh flexibility is not required. | Choose for cost-sensitive designs without need for advanced power-saving or reliability features. |
Compared with MT53E2G32D2NP-046 WT:A and K4E6E304EC-EGCF, W66BQ6NBUAHJ offers unique DDP density scaling and integrated PASR/TRR-making it optimal for thermally constrained, battery-powered systems needing both capacity and runtime efficiency.
Availability
W66BQ6NBUAHJ is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive infotainment system RAM, and industrial edge AI gateway memory requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for W66BQ6NBUAHJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including serial NOR/NAND Flash, RAM, and trusted computing ICs.
The W66BQ6NBUAHJ belongs to Winbond's LPDDR4 product line, engineered specifically for mobile and embedded systems demanding high bandwidth, ultra-low standby power, and robust signal integrity at sub-1.2V operation.
FAQ
What is the package type and ball count of W66BQ6NBUAHJ?
W66BQ6NBUAHJ uses a Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 200 solder balls arranged in a 10 mm × 12 mm body size and 0.65 mm pitch. This matches JEDEC LPDDR4 DDP mechanical standards and supports automated placement and reflow in high-volume manufacturing.
Does W66BQ6NBUAHJ support on-die termination (ODT) for both command/address and data buses?
Yes, W66BQ6NBUAHJ supports configurable on-die termination for both the command/address bus (ODT_CA) and the DQ/DQS/DMI bus (ODT_DQ). ODT states are controlled via mode registers MR1 and MR2, enabling dynamic impedance matching during reads/writes to minimize reflections and improve signal integrity at 4266 Mbps.
Is W66BQ6NBUAHJ pin-compatible with other Winbond LPDDR4 parts like W66BP6NB?
No, W66BQ6NBUAHJ is not pin-compatible with W66BP6NB. While both use WFBGA-200 packages, W66BQ6NBUAHJ is a dual-die-package (DDP) part with distinct ball assignment and internal addressing, whereas W66BP6NB is a single-die-package (SDP) variant-requiring different PCB layout and controller initialization.
What LPDDR4 standard revision does W66BQ6NBUAHJ comply with?
W66BQ6NBUAHJ complies with JEDEC JESD209-4B, the official LPDDR4 specification that defines electrical, timing, and functional requirements for 4266 Mbps operation, including features such as write-leveling, read DQ calibration, CA/DQ VREF training, and multi-purpose command (MPC) support.
Can W66BQ6NBUAHJ operate in partial array self-refresh (PASR) mode, and how is it enabled?
Yes, W66BQ6NBUAHJ supports PASR to reduce refresh current by limiting refresh to active memory regions. PASR is configured via MR13 (bits A12–A10), allowing selection of 1/2, 1/4, or 1/8 array refresh granularity. Activation requires issuing a PASR entry command after setting the register, and is validated across -25°C to +85°C.
W66BQ6NBUAHJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 2.133 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BQ6NBUAHJ FAQ
1.How can I place an order for W66BQ6NBUAHJ through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BQ6NBUAHJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BQ6NBUAHJ reliable?
The price and inventory of W66BQ6NBUAHJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BQ6NBUAHJ is usually 5 days.
3.What payment methods are accepted for W66BQ6NBUAHJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BQ6NBUAHJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BQ6NBUAHJ?
W66BQ6NBUAHJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BQ6NBUAHJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BQ6NBUAHJ?
For technical support, including W66BQ6NBUAHJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BQ6NBUAHJ requirements.
6.How does Aetrix verify that W66BQ6NBUAHJ is sourced from the original manufacturer or authorized distributors?
All W66BQ6NBUAHJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BQ6NBUAHJ meets industry standards.
7.What is the process for return or replacement of W66BQ6NBUAHJ?
All W66BQ6NBUAHJ units undergo pre-shipment inspection (PSI). If there is an issue with W66BQ6NBUAHJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BQ6NBUAHJ part is unused and in its original packaging.
Return procedure for W66BQ6NBUAHJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66BQ6NBUAHJ Tags
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