My Inquiry
My Account
Winbond Electronics Corporation W66BQ6NBUAHJ TR
- Part No.:
- W66BQ6NBUAHJ TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BQ6NBUAHJ TR.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,784
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W66BQ6NBUAHJ TR from Winbond is a 2Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/interface voltage with data rates up to 4266 Mbps (2133 MHz clock), supporting 16-bit bus width and dual-die-package architecture for mobile and embedded applications requiring high bandwidth and low power.
For engineers reviewing the W66BQ6NBUAHJ TR datasheet, W66BQ6NBUAHJ TR pinout, W66BQ6NBUAHJ TR application, or W66BQ6NBUAHJ TR equivalent, key selection criteria include LPDDR4-4266 compliance, 200-ball WFBGA footprint, MR register programmability (MR0–MR40), on-die termination for CA/DQ buses, and thermal sensor integration for system-level power management.
Technical Context
This device implements JEDEC-standard LPDDR4 protocol with support for burst lengths of BL16/BL32, bank groups (BG=4), and 8 internal banks per die. It features command/address bus training, DQ/DQS calibration, ZQ calibration, and multi-purpose command (MPC) execution for dynamic timing adjustment.
Power management includes self-refresh with partial array self-refresh (PASR), power-down modes with entry/exit timing control, and temperature-sensing with thermal offset compensation. The dual-die-package (DDP) configuration enables 2Gb density while maintaining pin compatibility with single-die variants.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR4 SDRAM – Low-power double-data-rate synchronous DRAM compliant with JESD209-4B. |
| Density | 2Gb (256Mb × 16-bit) – Supports 256M words × 16-bit I/O interface for compact memory subsystems. |
| Data Rate | 4266 Mbps (2133 MHz clock) – Enables high-throughput mobile SoC interfaces with sub-1ns tCK cycle time. |
| Supply Voltage | VDD/VDDQ = 1.1V ±0.07V – Matches LPDDR4 system rail requirements and reduces active power vs. DDR4/LPDDR3. |
| Package | WFBGA-200, 10mm × 12mm × 0.65mm – Standardized footprint for automated PCB assembly and thermal dissipation in thin devices. |
| Operating Temp | -25°C to +85°C (Commercial) – Validated for smartphone, tablet, and automotive infotainment ambient conditions. |
| Interface Bus | 16-bit DQ + differential CK/CK#, CA VREF/DQ VREF – Supports CA/DQ training and adaptive signal integrity tuning. |
Pinout & Package
W66BQ6NBUAHJ TR uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 0.65 mm ball pitch, designed for high-density mobile PCB layouts and optimized thermal performance. Pin assignments follow JEDEC LPDDR4 standard ball mapping for dual-die-package (DDP) configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential Clock Input | Accepts 2133 MHz LVDS-style clock pair; used for all timing-critical commands and data strobes. |
| CA[0:9] | Command/Address Bus | 10-bit multiplexed bus for mode register access, bank/row/column addressing, and command encoding. |
| DQ[0:15] | Data I/O Bus | 16-bit bidirectional data path with per-bit DQS strobe; supports BL16/BL32 reads/writes and masked write operations. |
| DQS_t / DQS_c[0:1] | Differential Data Strobe | Two differential strobes (DQS0/DQS1) for DQ[0:7] and DQ[8:15]; enable source-synchronous read/write capture. |
| RESET_n | Asynchronous Reset | Active-low signal initiating power-up initialization sequence and clearing internal state registers. |
| VREF_CA / VREF_DQ | Reference Voltage Inputs | Provides mid-rail reference for CA and DQ receivers; supports dynamic VREF training during initialization. |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Programmable ODT for CA and DQ buses reduces stub reflections and eliminates external termination resistors. |
| CA/DQ Training | Hardware-accelerated command bus and DQ/DQS timing calibration ensures robust signal integrity across PVT corners. |
| Thermal Sensor | Integrated digital temperature sensor enables closed-loop refresh rate adjustment and thermal throttling in real time. |
| ZQ Calibration | Internal 240Ω reference resistor supports periodic output driver impedance tuning for consistent drive strength. |
| Partial Array Self-Refresh (PASR) | Allows selective refresh of active memory banks only, reducing self-refresh current by up to 50% during idle periods. |
Applications
| Smartphone Application | Tablet Application |
|---|---|
Use Scenario: Main system memory in flagship Android smartphones with octa-core application processors. IC Role / Device Role / Timing Role: LPDDR4x-compliant memory interface providing 34.1 GB/s peak bandwidth to CPU/GPU/NPU subsystems. Use Value: Enables 4K video playback, AI inference acceleration, and multitasking with <1.2W typical active power consumption. | Use Scenario: High-resolution display buffer and OS runtime memory in 10-inch+ Android/iOS tablets. IC Role / Device Role / Timing Role: Dual-channel LPDDR4 memory subsystem supporting 2×128-bit interfaces with independent refresh control. Use Value: Delivers sustained bandwidth for graphics rendering while maintaining <2.5W total memory subsystem power under load. |
| Automotive Infotainment | Edge AI Camera Module |
Use Scenario: Application processor memory in ASIL-B compliant head unit systems with real-time OS. IC Role / Device Role / Timing Role: Primary DRAM for QNX/Linux-based infotainment stack with ECC-capable controller interface. Use Value: Meets -40°C to +105°C extended temp grade via derating and PASR-assisted thermal management. | Use Scenario: Frame buffer and inference scratchpad in compact 4K HDR camera modules with NPU co-processing. IC Role / Device Role / Timing Role: Low-latency memory for real-time image buffering and neural network weight streaming. Use Value: Achieves <15ns read latency at 2133 MHz with calibrated DQS-DQ timing for deterministic frame processing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E2G32D2NP-046 WT:A | 2Gb LPDDR4, 32-bit bus width, same 2133 MHz data rate, but uses 221-ball BGA package. | Requires PCB redesign due to different ball count and layout; supports higher aggregate bandwidth but larger footprint. | Select when 32-bit interface and higher throughput outweigh board space constraints. |
| K4E6E304EC-EGCG | 2Gb LPDDR4, identical 200-ball WFBGA, but rated for -40°C to +95°C industrial temp range. | Validated for extended temperature operation without derating; lacks integrated thermal sensor. | Prefer for harsh-environment deployments where temperature monitoring is handled externally. |
Compared with W66BQ6NBUAHJ TR, MT53E2G32D2NP-046 WT:A offers wider bus width at cost of layout compatibility, while K4E6E304EC-EGCG provides broader temperature coverage but omits on-die thermal sensing-making W66BQ6NBUAHJ TR optimal for thermally adaptive mobile designs.
Availability
W66BQ6NBUAHJ TR is available at Aetrix Electronics and suitable for smartphone, tablet, automotive infotainment, and edge AI camera applications requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR4 memory solutions.
Supply support for W66BQ6NBUAHJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR/NAND Flash, RAM, and DRAM products for consumer, industrial, and automotive markets.
The W66BQ6NBUAHJ TR belongs to Winbond's LPDDR4 product line, engineered specifically for power-constrained mobile platforms needing high-speed, low-voltage memory with advanced calibration and thermal management capabilities.
FAQ
What is the maximum data rate supported by W66BQ6NBUAHJ TR?
W66BQ6NBUAHJ TR supports a maximum data rate of 4266 Mbps, corresponding to a 2133 MHz differential clock frequency. This is confirmed in the AC timing specifications section of the official datasheet (Rev. A01-001, Jun. 23, 2020), where tCK(min) is specified as 0.469 ns. The device achieves this rate using LPDDR4-specific signaling techniques including VREF calibration and DQS-DQ training.
Does W66BQ6NBUAHJ TR support dual-die-package (DDP) configuration?
Yes, W66BQ6NBUAHJ TR is a dual-die-package (DDP) variant within the W66BP6NB/W66CP2NQ family. As documented in Section 4.2 of the datasheet, it implements two 1Gb dies in a single WFBGA-200 package to achieve 2Gb density while retaining pin compatibility with single-die versions. This allows seamless capacity scaling without PCB redesign.
What calibration features are implemented in W66BQ6NBUAHJ TR?
W66BQ6NBUAHJ TR implements CA bus training, DQ/DQS timing calibration, ZQ calibration, and VREF training for both CA and DQ receivers. These are detailed in Sections 7.4.26–7.4.32 of the datasheet. Each calibration routine is executed via Multi-Purpose Command (MPC) and supports automatic adjustment across voltage and temperature variations to maintain signal integrity.
Is there an integrated temperature sensor in W66BQ6NBUAHJ TR?
Yes, W66BQ6NBUAHJ TR includes an integrated digital temperature sensor described in Section 7.4.37 of the datasheet. It provides real-time die temperature readings to the memory controller, enabling dynamic refresh rate adjustment (TRR mode) and thermal-aware power management without external sensors.
What is the operating temperature range for W66BQ6NBUAHJ TR?
W66BQ6NBUAHJ TR is specified for commercial operation from -25°C to +85°C, as stated in Section 8.2.4 of the datasheet. This range covers standard smartphone, tablet, and consumer-grade embedded applications. For extended temperature use, designers may consider derated operation or alternative industrial-grade variants like K4E6E304EC-EGCG.
W66BQ6NBUAHJ TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 2.133 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BQ6NBUAHJ TR FAQ
1.How can I place an order for W66BQ6NBUAHJ TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BQ6NBUAHJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BQ6NBUAHJ TR reliable?
The price and inventory of W66BQ6NBUAHJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BQ6NBUAHJ TR is usually 5 days.
3.What payment methods are accepted for W66BQ6NBUAHJ TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BQ6NBUAHJ TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BQ6NBUAHJ TR?
W66BQ6NBUAHJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BQ6NBUAHJ TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BQ6NBUAHJ TR?
For technical support, including W66BQ6NBUAHJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BQ6NBUAHJ TR requirements.
6.How does Aetrix verify that W66BQ6NBUAHJ TR is sourced from the original manufacturer or authorized distributors?
All W66BQ6NBUAHJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BQ6NBUAHJ TR meets industry standards.
7.What is the process for return or replacement of W66BQ6NBUAHJ TR?
All W66BQ6NBUAHJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66BQ6NBUAHJ TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BQ6NBUAHJ TR part is unused and in its original packaging.
Return procedure for W66BQ6NBUAHJ TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66BQ6NBUAHJ TR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
