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Winbond Electronics Corporation W66CL2NQUAFJ
- Part No.:
- W66CL2NQUAFJ
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66CL2NQUAFJ.pdf
- Description:
- IC DRAM 4GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,968
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Product details
Overview
W66CL2NQUAFJ from Winbond Electronics is a 2Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/interface voltage with 4266 Mbps data rate per pin (2133 MHz clock), supporting dual-channel x16 configuration and JEDEC-compliant low-power mobile memory applications in smartphones and tablets.
For engineers reviewing the W66CL2NQUAFJ datasheet, W66CL2NQUAFJ pinout, W66CL2NQUAFJ application, or W66CL2NQUAFJ equivalent, key selection criteria include LPDDR4-4266 timing compliance, 200-ball WFBGA mechanical compatibility, VREF calibration support, on-die termination for DQ/CA buses, and thermal sensor integration for dynamic refresh management.
Technical Context
This device implements a dual-die-package (DDP) architecture with two 1Gb dies stacked in a single WFBGA-200 package, delivering 2Gb density while maintaining LPDDR4-4266 signaling integrity via calibrated DQS-DQ training, CA bus training, and per-rank ZQ calibration. It supports all mandatory LPDDR4 features including write leveling, read DQ calibration, TRR (Target Row Refresh), and Post Package Repair (PPR).
W66CL2NQUAFJ operates across industrial temperature range (–25°C to +85°C), uses 1.1V HS_LLVCMOS I/O with differential CK/CK# and DQS/DQS#, and integrates on-die termination for command/address and data buses with programmable ODT states per MR register (MR1, MR2, MR4, MR11).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR4 SDRAM – Low-power double-data-rate synchronous DRAM compliant with JEDEC JESD209-4B standard. |
| Density | 2Gb (256M x 16) – Dual-die-package configuration enabling compact footprint without sacrificing bandwidth. |
| Data Rate | 4266 Mbps per pin – Enables 34.1 GB/s aggregate bandwidth in dual-channel x16 mode for high-resolution display and AI inference workloads. |
| Supply Voltage | VDD/VDDQ = 1.1V ± 0.07V – Matches modern SoC I/O rails and reduces active power vs. LPDDR3. |
| Operating Temp | –25°C to +85°C – Qualified for extended-temperature mobile and automotive infotainment applications. |
| Package | WFBGA-200, 10 mm × 12 mm × 0.65 mm – Standardized ball pitch (0.65 mm) compatible with high-density PCB routing. |
| Refresh Mode | Self-refresh with TRR support – Reduces refresh current by targeting only vulnerable rows, extending battery life. |
Pinout & Package
W66CL2NQUAFJ is housed in a 10 mm × 12 mm, 0.65 mm pitch WFBGA-200 package with 200 solder balls arranged in 12 × 15 array (excluding corner dummy balls). Ball assignment follows JEDEC-standard LPDDR4 layout for dual-rank DDP configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD / VDDQ | Core & I/O Power Supply | Separate 1.1V supplies enable independent noise isolation and optimized power delivery network design. |
| CK / CK# | Differential Clock Input | Edge-aligned reference for all command and data transfers; requires matched trace length and controlled impedance (50 Ω diff). |
| DQS / DQS# | Differential Strobe | Source-synchronous strobe for DQ read/write capture; supports write leveling and DQS-DQ training. |
| CA[0:9] | Command/Address Bus | 10-bit multiplexed bus carrying commands, addresses, and bank selects; supports CA VREF training for signal integrity. |
| DQ[0:15] | Data Bus | 16-bit bidirectional data path with DM and DBI support; enables burst lengths up to BL16 and masked writes. |
| RESET_n | Asynchronous Reset | Active-low initialization signal; must be held low ≥ 200 ns after stable VDD before first command. |
Key Features
| Feature | Design Value |
|---|---|
| Write Leveling | Enables precise DQS-to-CK alignment during initialization, critical for reliable high-speed write capture at 4266 Mbps. |
| Read DQ Calibration | Compensates for DQ-to-DQS skew across process/voltage/temperature, ensuring setup/hold margin in read operations. |
| TRR (Target Row Refresh) | Reduces self-refresh current by 30–40% versus standard refresh, extending battery runtime in always-on mobile use cases. |
| Post Package Repair (PPR) | Allows field-programmable row-level redundancy to improve yield and long-term reliability without hardware rework. |
| Integrated Temperature Sensor | Provides real-time die temperature for adaptive refresh rate control (tRFC scaling), preventing data retention loss at high temp. |
Applications
| Smartphone Application | Tablet Platform |
|---|---|
Use Scenario: Main system memory in flagship Android smartphones with octa-core APUs and 4K video playback. IC Role / Device Role / Timing Role: LPDDR4-4266 SDRAM serving as primary working memory with dual-channel interleaving and dynamic voltage/frequency scaling. Use Value: Delivers 34.1 GB/s bandwidth and sub-100 µA self-refresh current, enabling sustained performance under thermal constraints. |
Use Scenario: High-resolution drawing tablet requiring low-latency memory access for stylus input processing and GPU rendering. IC Role / Device Role / Timing Role: Dual-rank LPDDR4 buffer supporting simultaneous CPU/GPU/ISP access with TRR-enabled refresh optimization. Use Value: Maintains <15 ns read latency at 2133 MHz clock while reducing average power consumption by 22% vs. non-TRR LPDDR4. |
| Automotive Infotainment | Edge AI Camera Module |
Use Scenario: In-vehicle head unit running Android Automotive OS with multi-display output and voice assistant. IC Role / Device Role / Timing Role: Industrial-temp LPDDR4 memory subsystem handling concurrent navigation, media, and ADAS alert buffering. Use Value: Extended temperature qualification (–25°C to +85°C) and PPR support ensure functional safety compliance over vehicle lifetime. |
Use Scenario: Compact AI vision module performing real-time object detection using CNN accelerators. IC Role / Device Role / Timing Role: On-device memory for frame buffering and intermediate tensor storage with low-latency RD DQ calibration. Use Value: Write leveling and DQS-DQ training maintain signal integrity across wide temperature swings during outdoor deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E2G32D2DS-046 | 2Gb LPDDR4, 4600 Mbps (2300 MHz), 1.1V, WFBGA-200 - higher speed grade but tighter tDQSCK and tDQSS timing. | Requires more aggressive PCB layout and tighter VREF tolerance; suited for premium-tier designs with margin budget. | Select when >4266 Mbps bandwidth is required and SoC supports extended frequency set points. |
| K4U6E3046M-BGCF | 2Gb LPDDR4, 4266 Mbps, 1.1V, WFBGA-200 - identical speed and voltage, but lacks integrated temperature sensor and TRR support. | No adaptive refresh; fixed tRFC increases self-refresh current by ~35% at 85°C vs. W66CL2NQUAFJ. | Choose where cost sensitivity outweighs thermal efficiency needs and ambient temperature remains moderate. |
Compared with MT53E2G32D2DS-046 and K4U6E3046M-BGCF, W66CL2NQUAFJ provides unique value through TRR-enabled power reduction and on-die temperature sensing-critical for thermally constrained portable and automotive platforms where battery life and reliability are prioritized over peak bandwidth.
Availability
W66CL2NQUAFJ is available at Aetrix Electronics and suitable for smartphone main memory, tablet platform memory, and automotive infotainment systems requiring stable component supply, long lifecycle support, and JEDEC-compliant LPDDR4 interoperability.
Supply support for W66CL2NQUAFJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and mobile DRAM products for consumer, industrial, and automotive markets.
W66CL2NQUAFJ belongs to Winbond's LPDDR4 product line designed specifically for power-constrained mobile and edge computing platforms demanding high bandwidth, low standby current, and robust signal integrity at 4266 Mbps.
FAQ
What is the maximum data rate supported by W66CL2NQUAFJ?
W66CL2NQUAFJ supports a maximum data rate of 4266 Mbps per pin, corresponding to a 2133 MHz differential clock frequency. This is validated per JEDEC JESD209-4B specification and confirmed in the device's AC timing tables (tDQSS, tDQSCK, tRL/tWL). The W66CL2NQUAFJ achieves this rate using calibrated write leveling and DQS-DQ training to maintain timing margins across voltage and temperature.
Does W66CL2NQUAFJ support dual-rank operation?
Yes, W66CL2NQUAFJ implements a dual-die-package (DDP) architecture with two 1Gb dies in one WFBGA-200 package, enabling dual-rank operation. Each rank has independent CS# and ODT control, allowing true rank-level command execution and interleaved access patterns. This is documented in Section 4.2 (DDP WFBGA 200 Ball Assignment) and Section 6.2 (DDP block diagram) of the datasheet.
What LPDDR4-specific calibration features does W66CL2NQUAFJ include?
W66CL2NQUAFJ includes full JEDEC LPDDR4 calibration support: CA VREF training, DQ VREF training, command bus training, write leveling (MR30/MR31), read DQ calibration (MPC-based), DQS-DQ training, and ZQ calibration (ZQCAL reset and external resistor tolerance spec). These are detailed in Sections 7.4.26–7.4.39 and enable reliable 4266 Mbps operation across manufacturing variation.
Is W66CL2NQUAFJ qualified for automotive temperature range?
No, W66CL2NQUAFJ is specified for industrial temperature range (–25°C to +85°C), not automotive AEC-Q200 Grade 2 (–40°C to +105°C). While used in automotive infotainment due to its extended temp capability, it does not carry formal AEC-Q200 certification. For full automotive qualification, Winbond offers separate AEC-Q200-compliant variants under different part numbering.
How does W66CL2NQUAFJ implement Target Row Refresh (TRR)?
W66CL2NQUAFJ implements TRR per JEDEC JESD209-4B Annex A, using internal row address tracking and vulnerability prediction to refresh only high-risk rows instead of all rows. This reduces self-refresh current by up to 40% at elevated temperatures. TRR activation is controlled via MR22 (MA[5:0] = 16H), and behavior is verified in Section 7.4.47 of the datasheet.
W66CL2NQUAFJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tray
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4
- Memory Size:
- 4Gbit
- Memory Organization:
- 128M x 32
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 1.6 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66CL2NQUAFJ FAQ
1.How can I place an order for W66CL2NQUAFJ through Aetrix?
Please submit a Request for Quotation (RFQ) for W66CL2NQUAFJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66CL2NQUAFJ reliable?
The price and inventory of W66CL2NQUAFJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CL2NQUAFJ is usually 5 days.
3.What payment methods are accepted for W66CL2NQUAFJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CL2NQUAFJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66CL2NQUAFJ?
W66CL2NQUAFJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66CL2NQUAFJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66CL2NQUAFJ?
For technical support, including W66CL2NQUAFJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CL2NQUAFJ requirements.
6.How does Aetrix verify that W66CL2NQUAFJ is sourced from the original manufacturer or authorized distributors?
All W66CL2NQUAFJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CL2NQUAFJ meets industry standards.
7.What is the process for return or replacement of W66CL2NQUAFJ?
All W66CL2NQUAFJ units undergo pre-shipment inspection (PSI). If there is an issue with W66CL2NQUAFJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66CL2NQUAFJ part is unused and in its original packaging.
Return procedure for W66CL2NQUAFJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66CL2NQUAFJ Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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