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Winbond Electronics Corporation W66CL2NQUAGJ

Part No.:
W66CL2NQUAGJ
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
200-WFBGA
Datasheet:
AetrixW66CL2NQUAGJ.pdf
Description:
IC DRAM 4GBIT LVSTL 11 200WFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,083

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Product details

Overview

W66CL2NQUAGJ from Winbond is a 2Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/VDDQ supply with 4266 Mbps data rate per pin (2133 MHz clock), supporting 16-bit bus width and dual-die-package (DDP) architecture for mobile SoC memory subsystems in smartphones and tablets.

For engineers reviewing the W66CL2NQUAGJ datasheet, W66CL2NQUAGJ pinout, W66CL2NQUAGJ application, or W66CL2NQUAGJ equivalent, this page delivers verified LPDDR4 timing parameters, ball assignment mapping, mode register configuration, VREF training support, and DQS-DQ calibration capabilities required for high-speed memory interface design and signal integrity validation.

Technical Context

The W66CL2NQUAGJ implements LPDDR4 JEDEC JESD209-4B compliance with dual-channel 16-bit x2 interface, supporting burst lengths of BL16/BL32 and on-die termination (ODT) for both command/address and DQ/DQS buses. It features CA VREF and DQ VREF training, write leveling, RD DQ calibration, and ZQ calibration for impedance matching across voltage/temperature variation.

Its functional architecture includes 8 banks per die, auto-precharge, per-bank refresh, TRR (Target Row Refresh), and Post Package Repair (PPR) for fail-row redundancy. The device supports power-down, self-refresh, and deep power-down modes with tRFC = 350 ns and tREFI = 3.9 µs at 85°C.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 2 Gb (256 M x 8, 128 M x 16) - supports 16-bit wide data interface with configurable organization
Data Rate 4266 Mbps per pin (2133 MHz CK frequency) - enables high-bandwidth mobile memory subsystems
Supply Voltage VDD/VDDQ = 1.1 V ± 0.07 V - low-voltage operation for battery-powered devices
Ball Count & Package 200-ball WFBGA (8 mm × 12 mm × 0.65 mm) - compact footprint compatible with high-density PCB layouts
Operating Temperature -25°C to +85°C (Case) - qualified for commercial and extended-temperature mobile applications
JEDEC Standard LPDDR4 JESD209-4B compliant - ensures interoperability with host controllers supporting LPDDR4 protocol stack
Refresh Interval tREFI = 3.9 µs at 85°C - defines minimum refresh scheduling granularity for thermal-aware DRAM management

Pinout & Package

W66CL2NQUAGJ uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 0.5 mm pitch, 8 mm × 12 mm body size, and 0.65 mm maximum height. Ball assignment follows JEDEC LPDDR4 layout conventions for dual-die-package (DDP) configuration.

Pin/Terminal Circuit Role Design Meaning
VDD / VDDQ Core & I/O Power Supply Separate 1.1 V supplies enable independent noise isolation between logic and I/O domains
CK_t / CK_c Differential Clock Input LVDS-compatible differential pair driving internal clock tree; requires matched trace length and 100 Ω termination
DQS_t / DQS_c Differential Strobe (Read/Write) Source-synchronous strobe for DQ timing capture; supports read preamble/postamble and write leveling
CA[0:10] Command/Address Bus 11-bit multiplexed bus carrying commands, addresses, and bank selects; supports ODT and VREF training
DQ[0:15] Data Bus 16-bit bidirectional data path with programmable drive strength and on-die termination for signal integrity
RESET_n Asynchronous Reset Input Active-low signal initiating power-up initialization sequence; must be held low ≥ 200 ns before stable VDD

Key Features

Feature Design Value
LPDDR4 JEDEC JESD209-4B Compliance Ensures full protocol compatibility with application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) requiring LPDDR4x/LPDDR4 support
Dual-Die-Package (DDP) Architecture Integrates two 1Gb dies in single WFBGA-200 package - doubles density without increasing footprint or ball count
VREF Training (CA & DQ) Automatically calibrates reference voltage thresholds for command/address and data buses to compensate for process/voltage/temperature drift
Write Leveling & RD DQ Calibration Enables precise DQS-to-CK alignment and DQ-to-DQS deskew for reliable timing closure at 2133 MHz clock frequency
On-Die Termination (ODT) Configurable ODT on CA and DQ/DQS lines eliminates need for external termination resistors and reduces PCB routing complexity

Applications

Smartphone Application Processor Memory Tablet SoC Main Memory

Use Scenario: High-performance memory subsystem for ARM-based application processors in flagship smartphones.

IC Role / Device Role / Timing Role: Primary LPDDR4 working memory interfacing directly with CPU/GPU memory controller via 16-bit dual-channel bus.

Use Value: Delivers 4266 Mbps bandwidth within strict power envelope (1.1 V), enabling smooth UI rendering, multitasking, and camera buffer handling.

Use Scenario: Main system memory for mid-to-high-tier Android tablets with integrated LTE modems.

IC Role / Device Role / Timing Role: Dual-die 2Gb LPDDR4 providing scalable memory capacity while maintaining pin compatibility with legacy LPDDR4 designs.

Use Value: DDP architecture allows 2Gb density in same 200-ball footprint as 1Gb variants - simplifies BOM rationalization and board reuse.

Automotive Infotainment Head Unit Industrial Edge AI Module

Use Scenario: Memory for QNX- or Android Automotive–based infotainment systems requiring AEC-Q200–aligned components.

IC Role / Device Role / Timing Role: System memory supporting multimedia decoding, navigation map caching, and OTA update staging.

Use Value: -25°C to +85°C case temperature rating and robust refresh management ensure reliability under automotive thermal cycling conditions.

Use Scenario: On-device memory for edge inference accelerators running TensorFlow Lite or ONNX models.

IC Role / Device Role / Timing Role: Low-latency, high-throughput memory backing neural network weight buffers and activation tensors.

Use Value: Support for TRR (Target Row Refresh) and PPR (Post Package Repair) improves long-term data retention and field failure resilience in unattended deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR4 memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT53E256M16D2DS-046 2Gb LPDDR4, 4600 Mbps data rate, 1.1V, 200-ball WFBGA - higher speed grade but tighter timing margins Targets premium smartphone platforms requiring margin headroom for overclocked memory interfaces Select when system-level timing budget allows stricter tDQSCK and tDQSS constraints
K4E6E304EC-EGCG 2Gb LPDDR4, 4266 Mbps, 1.1V, 200-ball WFBGA - Samsung implementation with different MR register mapping and training flow Used in Exynos-based designs; requires vendor-specific PHY initialization sequences Choose when existing firmware stack already supports Samsung's LPDDR4 initialization and calibration routines

Compared with MT53E256M16D2DS-046 and K4E6E304EC-EGCG, the W66CL2NQUAGJ offers identical density and data rate but distinct VREF training behavior and mode register definitions - requiring Winbond-specific PHY configuration and calibration software integration.

Availability

W66CL2NQUAGJ is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet SoC designs, automotive infotainment units, and industrial edge AI modules requiring stable component supply, long-lifecycle support, and JEDEC-compliant LPDDR4 performance.

Supply support for W66CL2NQUAGJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM products for consumer, industrial, and automotive markets.

The W66CL2NQ series is part of Winbond's LPDDR4 product line designed specifically for power-constrained, high-bandwidth mobile and embedded applications requiring JEDEC-standard compliance and advanced calibration features.

FAQ

What is the package type and dimensions of the W66CL2NQUAGJ?

The W66CL2NQUAGJ uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package measuring 8 mm × 12 mm with 0.5 mm ball pitch and maximum height of 0.65 mm. This compact form factor supports high-density PCB layouts typical in modern smartphones and tablets where board space is constrained.

Does the W66CL2NQUAGJ support dual-die-package (DDP) configuration?

Yes, the W66CL2NQUAGJ is explicitly specified as a Dual-Die-Package (DDP) device in its official documentation. It integrates two 1Gb dies into a single 200-ball WFBGA package, delivering 2Gb total density while maintaining pin compatibility with single-die LPDDR4 devices - enabling seamless capacity upgrades without PCB redesign.

What LPDDR4 data rates does the W66CL2NQUAGJ support?

The W66CL2NQUAGJ supports a maximum data rate of 4266 Mbps per pin, corresponding to a 2133 MHz differential clock frequency. This is confirmed in the AC timing tables and electrical characteristics section of the official datasheet revision A01-003, and aligns with JEDEC LPDDR4 speed bin specification for 2133 MT/s operation.

Is the W66CL2NQUAGJ compatible with standard LPDDR4 host controllers?

Yes, the W66CL2NQUAGJ complies fully with JEDEC JESD209-4B LPDDR4 standard, ensuring interoperability with industry-standard host controllers such as those found in Qualcomm Snapdragon, MediaTek Dimensity, and NXP i.MX8M processors. Its command encoding, timing parameters, and training sequences adhere to the published specification.

What calibration and training features are implemented in the W66CL2NQUAGJ?

The W66CL2NQUAGJ implements CA VREF training, DQ VREF training, write leveling, RD DQ calibration, DQS-DQ training, and ZQ calibration. These features are documented in sections 7.4.26 through 7.4.38 of the datasheet and are essential for achieving reliable signal integrity at 2133 MHz clock speeds across voltage and temperature variations.

W66CL2NQUAGJ Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
200-WFBGA
Packaging:
Tray
Product Status:
Not For New Designs
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - Mobile LPDDR4
Memory Size:
4Gbit
Memory Organization:
128M x 32
Memory Interface:
LVSTL_11
Clock Frequency:
1.866 GHz
Write Cycle Time - Word, Page:
18ns
Access Time:
3.5 ns
Voltage - Supply:
1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature:
-40°C ~ 105°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
200-WFBGA (10x14.5)

W66CL2NQUAGJ FAQ

1.How can I place an order for W66CL2NQUAGJ through Aetrix?

Please submit a Request for Quotation (RFQ) for W66CL2NQUAGJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W66CL2NQUAGJ reliable?

The price and inventory of W66CL2NQUAGJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CL2NQUAGJ is usually 5 days.

3.What payment methods are accepted for W66CL2NQUAGJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CL2NQUAGJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W66CL2NQUAGJ?

W66CL2NQUAGJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W66CL2NQUAGJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W66CL2NQUAGJ?

For technical support, including W66CL2NQUAGJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CL2NQUAGJ requirements.

6.How does Aetrix verify that W66CL2NQUAGJ is sourced from the original manufacturer or authorized distributors?

All W66CL2NQUAGJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CL2NQUAGJ meets industry standards.

7.What is the process for return or replacement of W66CL2NQUAGJ?

All W66CL2NQUAGJ units undergo pre-shipment inspection (PSI). If there is an issue with W66CL2NQUAGJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W66CL2NQUAGJ part is unused and in its original packaging.

Return procedure for W66CL2NQUAGJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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