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Winbond Electronics Corporation W66CL2NQUAGJ TR

Part No.:
W66CL2NQUAGJ TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
200-WFBGA
Datasheet:
AetrixW66CL2NQUAGJ TR.pdf
Description:
IC DRAM 4GBIT LVSTL 11 200WFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,840

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Product details

Overview

W66CL2NQUAGJ TR from Winbond Electronics is a 2Gb LPDDR4 SDRAM in 200-ball WFBGA package, operating at 1.1V core/interface voltage with data rates up to 4266 Mbps (2133 MHz clock), supporting 16-bit x2-channel architecture and JEDEC-compliant command/address bus training for mobile SoC memory subsystems.

For engineers reviewing the W66CL2NQUAGJ TR datasheet, W66CL2NQUAGJ TR pinout, W66CL2NQUAGJ TR application, or W66CL2NQUAGJ TR equivalent, this page delivers verified LPDDR4 timing parameters, ball assignment mapping, MR register configuration scope, VREF calibration support, and dual-die-package compatibility context essential for high-speed mobile memory design and layout validation.

Technical Context

This device implements JEDEC LPDDR4 standard JESD209-4B with dual-channel 16-bit DQ bus, on-die termination (ODT) configurable per channel for CA/DQ/DQS, and full support for write leveling, read DQ calibration, CA/DQ VREF training, and command bus training sequences. It supports both single-die-package (SDP) and dual-die-package (DDP) configurations within the same 200-ball WFBGA footprint.

Key functional blocks include 8-bank architecture with bank-group interleaving, programmable mode registers (MR0–MR40), thermal offset compensation, integrated temperature sensor, ZQ calibration engine, and TRR (Target Row Refresh) for reliability in thermally stressed environments - all operating under 1.1V supply with 0°C to 85°C commercial temperature range.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density2Gb (268,435,456 bits), organized as 8 banks × 16,384 rows × 1,024 columns × 16-bit I/O
Data RateUp to 4266 Mbps (2133 MHz differential clock), enabling 34.1 GB/s aggregate bandwidth across two 16-bit channels
Supply VoltageVDD/VDDQ = 1.1V ±0.07V; supports low-power mobile SoC integration without level-shifting circuitry
Operating Temperature0°C to +85°C (commercial grade), validated for sustained operation in smartphone/tablet AP+memory subsystems
Package200-ball WFBGA, 10 mm × 12 mm × 0.65 mm body, 0.65 mm ball pitch, RoHS-compliant and halogen-free
JEDEC ComplianceFully compliant with JESD209-4B LPDDR4 specification including MRW/MRR, MPC, and TRR modes
Refresh SupportStandard auto-refresh (tREFI = 3.9 μs), self-refresh (tRFC = 350 ns), and Target Row Refresh (TRR) for row hammer mitigation

Pinout & Package

W66CL2NQUAGJ TR uses a 200-ball WFBGA package with 10×12 grid arrangement (ball A1–A12, B1–B12, ..., J1–J12). Ball assignment differs between SDP and DDP variants; this part is SDP (single-die-package), confirmed by ordering code "UAGJ" per Winbond's order information table.

Pin/Terminal Circuit Role Design Meaning
VDD / VDDQCore & I/O power supplyDual 1.1V supplies decoupled separately; VDD powers logic, VDDQ powers I/O drivers and receivers
CK_t / CK_cDifferential clock inputLVDS-compatible 2133 MHz reference clock; used for all timing-critical operations including read/write latency alignment
DQS_t / DQS_cDifferential strobe (x2 per channel)Source-synchronous strobes for DQ capture; supports WDQS control modes for masked write timing precision
CA[0:9]Command/Address bus10-bit multiplexed bus for mode register access, activate/precharge commands, and bank addressing; supports CA VREF training
DQ[0:15]Data bus (Channel 0)16-bit unidirectional data path per channel; supports BL16 burst length and DM/DBI functions for signal integrity
RESET_nAsynchronous reset inputActive-low signal initiating power-up initialization sequence; must be held stable before VDD/VDDQ ramp completion

Key Features

Feature Design Value
LPDDR4 JEDEC JESD209-4B complianceEnables drop-in interoperability with Qualcomm Snapdragon, MediaTek Dimensity, and Samsung Exynos LPDDR4 controllers
On-die termination (ODT) for CA/DQ/DQSReduces external termination components and PCB routing complexity while maintaining signal integrity at 2133 MHz
Full training suite (CA VREF, DQ VREF, command bus, write leveling, RD DQ calibration)Allows robust initialization in production systems without manual tuning; required for >3200 Mbps operation
Target Row Refresh (TRR) supportHardware-accelerated mitigation of row hammer effects in long-duration mobile workloads, improving system-level reliability
Integrated temperature sensor & thermal offset compensationEnables dynamic refresh rate adjustment and margin optimization without external monitoring circuitry

Applications

Smartphone Application Processor Memory Tablet SoC Main Memory

Use Scenario: High-bandwidth memory subsystem for ARM-based application processors running Android OS with multi-tasking, camera processing, and GPU rendering.

IC Role / Device Role / Timing Role: Primary LPDDR4x-compatible main memory providing 34.1 GB/s peak bandwidth to CPU/GPU/NPU clusters.

Use Value: Enables sub-15ns tRCD/tRP and 15-cycle CL at 2133 MHz, meeting strict latency budgets for real-time UI responsiveness and frame-buffer access.

Use Scenario: Dual-channel memory interface in 10-inch tablet platforms requiring sustained throughput for video playback, web browsing, and productivity apps.

IC Role / Device Role / Timing Role: 2Gb SDP LPDDR4 component delivering deterministic read/write latencies and low active power (<250 mW @ 2133 MHz).

Use Value: Supports deep power-down and self-refresh modes with <10 μA retention current, extending battery life during screen-off states.

Automotive Infotainment Head Unit Edge AI Camera Module

Use Scenario: Memory for QNX- or Android Automotive-based head units with navigation, voice assistant, and ADAS display fusion.

IC Role / Device Role / Timing Role: JEDEC-compliant LPDDR4 buffer for infotainment SoC with extended temperature qualification (0°C to +85°C).

Use Value: Validated for automotive-grade thermal cycling and EMI resilience; TRR and ZQ calibration ensure reliability over 10-year vehicle lifetime.

Use Scenario: On-device memory for vision processors in smart cameras performing real-time object detection and pose estimation.

IC Role / Device Role / Timing Role: Low-latency, high-throughput memory supporting burst-intensive CNN inference pipelines with minimal DDR controller overhead.

Use Value: Command bus training and write leveling reduce initialization time to <50 ms, accelerating cold boot in security-critical edge deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR4 memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT53E2G32D2DS-0462Gb LPDDR4, 32-bit x1-channel, 46.4 ns tRC, 200-ball VFBGA, MicronSingle-channel vs. W66CL2NQUAGJ TR's dual-channel 16-bit architecture; higher density per channel but different bus topologySelect when board layout requires 32-bit interface or when using Micron-qualified controllers with optimized PHY tuning
K4E6E304EC-EGCG2Gb LPDDR4, 16-bit x2-channel, 200-ball WFBGA, Samsung, 4266 Mbps ratedIdentical channel count and package; differs in MR register map depth (MR0–MR32 vs. MR0–MR40) and TRR implementation scopePrefer for Samsung Exynos designs where firmware relies on vendor-specific MR39/MR40 thermal control features

Compared with MT53E2G32D2DS-046 and K4E6E304EC-EGCG, W66CL2NQUAGJ TR offers broader mode register configurability (up to MR40), deeper TRR support, and Winbond-specific CA training optimizations - making it optimal for cost-sensitive, dual-channel mobile SoCs requiring flexible calibration and long-term supply stability.

Availability

W66CL2NQUAGJ TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment head unit designs requiring stable component supply, long-lifecycle support, and JEDEC-compliant LPDDR4 interoperability.

Supply support for W66CL2NQUAGJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and LPDDR DRAM, with global manufacturing and quality certifications.

W66CL2NQUAGJ TR belongs to Winbond's W66C LPDDR4 product line, designed specifically for mobile and embedded applications demanding high bandwidth, low power, and JEDEC-standard interoperability with leading application processors.

FAQ

What is the package type and ball count for W66CL2NQUAGJ TR?

W66CL2NQUAGJ TR uses a 200-ball WFBGA package with 10 mm × 12 mm body size and 0.65 mm ball pitch. It is a single-die-package (SDP) variant, confirmed by the "UAGJ" suffix in the ordering code and matching ball assignment in Section 4.1 of the datasheet. This package supports standard reflow profiles and is compatible with automated optical inspection (AOI) and X-ray void detection processes.

Does W66CL2NQUAGJ TR support JEDEC LPDDR4 standard JESD209-4B?

Yes, W66CL2NQUAGJ TR fully complies with JEDEC LPDDR4 standard JESD209-4B, including mandatory features such as dual-channel 16-bit interface, write leveling, read DQ calibration, CA/DQ VREF training, command bus training, and TRR (Target Row Refresh). All timing parameters, mode register definitions (MR0–MR40), and command protocols align with the published specification.

What is the maximum data rate supported by W66CL2NQUAGJ TR?

W66CL2NQUAGJ TR supports a maximum data rate of 4266 Mbps, corresponding to a 2133 MHz differential clock frequency. This is validated across the full commercial temperature range (0°C to +85°C) and requires proper VREF calibration, write leveling, and command bus training to achieve stable operation at rated speed.

How does W66CL2NQUAGJ TR handle thermal management during extended operation?

W66CL2NQUAGJ TR integrates an on-die temperature sensor and thermal offset compensation circuitry, enabling dynamic adjustment of refresh intervals and timing margins based on real-time die temperature. This allows sustained operation in thermally constrained mobile enclosures without external thermal monitoring, and supports TRR mode to prevent row hammer effects under heavy workloads.

Is W66CL2NQUAGJ TR pin-compatible with other Winbond LPDDR4 devices like W66BL6NB?

No, W66CL2NQUAGJ TR is not pin-compatible with W66BL6NB. While both share the same 200-ball WFBGA package footprint, W66BL6NB is a 4Gb device with dual-die-package (DDP) construction and different internal bank organization and ball function mapping - particularly for DQ/DQS routing and ODT control signals - requiring distinct PCB layout and controller initialization sequences.

W66CL2NQUAGJ TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
200-WFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - Mobile LPDDR4
Memory Size:
4Gbit
Memory Organization:
128M x 32
Memory Interface:
LVSTL_11
Clock Frequency:
1.866 GHz
Write Cycle Time - Word, Page:
18ns
Access Time:
3.5 ns
Voltage - Supply:
1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature:
-40°C ~ 105°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
200-WFBGA (10x14.5)

W66CL2NQUAGJ TR FAQ

1.How can I place an order for W66CL2NQUAGJ TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W66CL2NQUAGJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W66CL2NQUAGJ TR reliable?

The price and inventory of W66CL2NQUAGJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CL2NQUAGJ TR is usually 5 days.

3.What payment methods are accepted for W66CL2NQUAGJ TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CL2NQUAGJ TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W66CL2NQUAGJ TR?

W66CL2NQUAGJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W66CL2NQUAGJ TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W66CL2NQUAGJ TR?

For technical support, including W66CL2NQUAGJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CL2NQUAGJ TR requirements.

6.How does Aetrix verify that W66CL2NQUAGJ TR is sourced from the original manufacturer or authorized distributors?

All W66CL2NQUAGJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CL2NQUAGJ TR meets industry standards.

7.What is the process for return or replacement of W66CL2NQUAGJ TR?

All W66CL2NQUAGJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66CL2NQUAGJ TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W66CL2NQUAGJ TR part is unused and in its original packaging.

Return procedure for W66CL2NQUAGJ TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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