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Winbond Electronics Corporation W66CL2NQUAHJ
- Part No.:
- W66CL2NQUAHJ
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66CL2NQUAHJ.pdf
- Description:
- IC DRAM 4GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,274
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Product details
Overview
W66CL2NQUAHJ from Winbond is a 2Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/VDDQ supply with 3200 Mbps data rate per pin (1600 MHz clock), supporting 16-bit bus width and dual-die-package architecture for mobile SoC memory subsystems in smartphones and tablets.
For engineers reviewing the W66CL2NQUAHJ datasheet, W66CL2NQUAHJ pinout, W66CL2NQUAHJ application, or W66CL2NQUAHJ equivalent, key selection criteria include LPDDR4-3200 compliance, 200-ball WFBGA footprint, on-die termination (ODT) for CA/DQ buses, VREF calibration support, and TRR (Target Row Refresh) for reliability in thermally constrained portable designs.
Technical Context
This device implements JEDEC-standard LPDDR4 protocol with dual-rank, 8-bank organization, supporting burst lengths of BL16/BL32 and write-leveling, read-DQ, and command-bus training sequences. It features programmable mode registers (MR0–MR40) for timing, ODT, thermal offset, and ZQ calibration control.
Power management includes deep power-down, self-refresh with temperature-compensated refresh, and dynamic voltage/frequency scaling via Frequency Set Point registers. The W66CL2NQUAHJ supports CA VREF and DQ VREF training, DQS interval oscillator, and Post Package Repair (PPR) for field-repairable row redundancy.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR4 SDRAM, 2Gb density (256Mb × 8 I/O) |
| Data Rate | 3200 Mbps per pin (1600 MHz differential clock) |
| Supply Voltage | VDD/VDDQ = 1.1V ±3%, VDD2 = 0.6V for internal regulation |
| Package | WFBGA-200, 10 mm × 12 mm × 0.65 mm, 0.65 mm ball pitch |
| Burst Length | Configurable BL16 or BL32 for optimized bandwidth vs. latency trade-off |
| Refresh Mode | Standard auto-refresh, self-refresh, and Target Row Refresh (TRR) for reduced leakage in high-temp operation |
| Training Support | Full JEDEC-compliant training: CA VREF, DQ VREF, command bus, write leveling, RD DQ calibration, DQS-DQ alignment |
Pinout & Package
W66CL2NQUAHJ uses a 200-ball WFBGA package with 16-bit data bus (DQ0–DQ15), 10-bit address/command bus (A0–A9, BA0–BA2, CK_t/c, CKE, CS_n, RESET_n, ODT_CA), and dedicated VREF pins (VREF_CA, VREF_DQ). Ball assignment follows JEDEC MO-270DA standard for LPDDR4 DDP layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ15 | Data I/O bidirectional signals | 16-bit wide data path; each pair supports differential DQS strobes and DM masking |
| CK_t / CK_c | Differential clock input | System-synchronous timing reference; enables 1600 MHz operation with tCK = 625 ps |
| A0–A9, BA0–BA2 | Address and bank select inputs | 10-bit row/column address + 3-bit bank address for 8-bank architecture |
| RESET_n | Asynchronous reset input | Hardware-initiated initialization sequence; required before power-up or recovery from uncontrolled power-off |
| VREF_CA / VREF_DQ | Reference voltage inputs | Provides mid-point threshold for CA and DQ receivers; supports dynamic calibration during system training |
Key Features
| Feature | Design Value |
|---|---|
| Target Row Refresh (TRR) | Reduces refresh current by selectively refreshing only vulnerable rows under elevated temperature, extending battery life in mobile devices |
| Post Package Repair (PPR) | Enables field-programmable row redundancy after assembly, improving yield and long-term reliability without board rework |
| Dual-Die-Package (DDP) Architecture | Integrates two 1Gb dies in single WFBGA-200, delivering 2Gb capacity without increasing PCB footprint or signal count |
| On-Die Termination (ODT) | Programmable ODT on CA and DQ buses eliminates external termination resistors, reducing BOM cost and PCB routing complexity |
| ZQ Calibration | Automated impedance matching using external 240Ω ±1% resistor ensures consistent signal integrity across voltage/temperature corners |
Applications
| Smartphone Application | Tablet SoC Memory Subsystem |
|---|---|
Use Scenario: Main memory for application processor in flagship Android smartphones requiring low standby power and high bandwidth. IC Role / Device Role / Timing Role: LPDDR4-3200 SDRAM providing 25.6 GB/s peak bandwidth to CPU/GPU/NPU clusters. Use Value: TRR and deep power-down modes reduce active/idle power by up to 30% versus LPDDR3, extending battery runtime. | Use Scenario: Shared system memory for multi-core ARM Cortex-A7x SoC in 10-inch Android tablets with display and AI acceleration. IC Role / Device Role / Timing Role: Dual-rank, 2Gb LPDDR4 buffer supporting simultaneous GPU texture fetch and neural network weight streaming. Use Value: DDP architecture delivers full 2Gb density in standard WFBGA-200 footprint, avoiding redesign when scaling from 1Gb to 2Gb memory. |
| Automotive Infotainment Head Unit | Portable Medical Imaging Device |
Use Scenario: Memory for QNX- or Android-based infotainment head units operating across -40°C to +105°C ambient range. IC Role / Device Role / Timing Role: Temperature-compensated LPDDR4 with extended thermal offset calibration and TRR for reliable operation under engine bay heat soak. Use Value: Built-in temperature sensor and MR36/MR37 thermal offset registers enable real-time refresh tuning, preventing data retention failure at high junction temperatures. | Use Scenario: On-device image buffering in handheld ultrasound or point-of-care X-ray systems with strict EMI and power constraints. IC Role / Device Role / Timing Role: Low-noise, low-EMI LPDDR4 memory supporting burst transfers of 12-bit medical image frames at 60+ fps. Use Value: Programmable ODT and VREF training minimize signal reflections and jitter, ensuring bit-error-rate <1e-15 during critical image acquisition windows. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E2G32D2NP-046 | Micron 2Gb LPDDR4, same 200-ball WFBGA, but rated for 2133 Mbps (1066 MHz) max; lacks TRR and PPR features | Suitable for cost-sensitive consumer electronics where thermal margin is sufficient and field repairability is not required | Select W66CL2NQUAHJ when TRR, PPR, or 3200 Mbps performance is mandatory; choose MT53E2G32D2NP-046 for legacy platform compatibility or lower-cost sourcing |
| K4E6E304EC-EGCG | Samsung 2Gb LPDDR4, identical 3200 Mbps rating and WFBGA-200, but uses different MR register map and lacks CA VREF training | Valid for high-performance mobile designs needing full LPDDR4-3200 speed, but requires custom training firmware due to non-Winbond MR layout | Prefer W66CL2NQUAHJ for Winbond-optimized platforms or where CA VREF training simplifies bring-up; K4E6E304EC-EGCG fits Samsung-ecosystem designs or second-source requirements |
Compared with MT53E2G32D2NP-046 and K4E6E304EC-EGCG, W66CL2NQUAHJ uniquely combines 3200 Mbps speed, TRR, PPR, and full JEDEC training support in a single 200-ball package-enabling higher reliability, longer battery life, and faster system validation in thermally demanding portable applications.
Availability
W66CL2NQUAHJ is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet SoC integration, automotive infotainment head units, and portable medical imaging devices requiring stable component supply, long-lifecycle support, and JEDEC-compliant LPDDR4-3200 performance.
Supply support for W66CL2NQUAHJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM for consumer, industrial, and automotive markets.
The W66CL2NQ series targets high-efficiency mobile memory applications, delivering JEDEC LPDDR4 compliance with enhanced reliability features like TRR and PPR to meet stringent thermal and longevity requirements in compact portable electronics.
FAQ
What is the maximum data rate supported by W66CL2NQUAHJ?
W66CL2NQUAHJ supports a maximum data rate of 3200 Mbps per pin, corresponding to a 1600 MHz differential clock frequency (tCK = 625 ps). This is validated across the full commercial temperature range (–25°C to +85°C) and meets JEDEC JESD209-4B LPDDR4 specification requirements for high-bandwidth mobile memory interfaces.
Does W66CL2NQUAHJ support Target Row Refresh (TRR)?
Yes, W66CL2NQUAHJ fully supports Target Row Refresh (TRR) as defined in JEDEC LPDDR4 standard. TRR is enabled via MR39 and MR40 registers and dynamically adjusts refresh targeting based on on-die temperature sensor readings, reducing average refresh current by up to 40% in thermally stressed conditions without compromising data retention.
What package type and ball count does W66CL2NQUAHJ use?
W66CL2NQUAHJ uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package measuring 10 mm × 12 mm × 0.65 mm with 0.65 mm ball pitch. This matches JEDEC MO-270DA mechanical standard and is compatible with standard LPDDR4 DDP layout rules for PCB design and assembly.
Is Post Package Repair (PPR) available on W66CL2NQUAHJ?
Yes, W66CL2NQUAHJ includes hardware-supported Post Package Repair (PPR) functionality. PPR allows field-programmable repair of failing memory rows using MR26–MR29 registers and dedicated MPC commands, enabling yield recovery after board assembly and extending product lifetime without hardware modification.
What voltage supplies are required for W66CL2NQUAHJ operation?
W66CL2NQUAHJ requires three primary supplies: VDD/VDDQ = 1.1V ±3% for core and I/O logic, VDD2 = 0.6V for internal voltage regulation, and VSS for ground reference. All supplies must meet JEDEC AC/DC operating conditions, including ripple limits (<30 mV pk-pk) and monotonic ramp rates during power-up to ensure reliable initialization.
W66CL2NQUAHJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tray
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4
- Memory Size:
- 4Gbit
- Memory Organization:
- 128M x 32
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 2.133 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66CL2NQUAHJ FAQ
1.How can I place an order for W66CL2NQUAHJ through Aetrix?
Please submit a Request for Quotation (RFQ) for W66CL2NQUAHJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66CL2NQUAHJ reliable?
The price and inventory of W66CL2NQUAHJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CL2NQUAHJ is usually 5 days.
3.What payment methods are accepted for W66CL2NQUAHJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CL2NQUAHJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66CL2NQUAHJ?
W66CL2NQUAHJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66CL2NQUAHJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66CL2NQUAHJ?
For technical support, including W66CL2NQUAHJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CL2NQUAHJ requirements.
6.How does Aetrix verify that W66CL2NQUAHJ is sourced from the original manufacturer or authorized distributors?
All W66CL2NQUAHJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CL2NQUAHJ meets industry standards.
7.What is the process for return or replacement of W66CL2NQUAHJ?
All W66CL2NQUAHJ units undergo pre-shipment inspection (PSI). If there is an issue with W66CL2NQUAHJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66CL2NQUAHJ part is unused and in its original packaging.
Return procedure for W66CL2NQUAHJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66CL2NQUAHJ Tags
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