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Winbond Electronics Corporation W66CL2NQUAHJ TR
- Part No.:
- W66CL2NQUAHJ TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66CL2NQUAHJ TR.pdf
- Description:
- IC DRAM 4GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,730
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Product details
Overview
W66CL2NQUAHJ TR from Winbond is a 2Gb LPDDR4 SDRAM in 200-ball WFBGA package, operating at 1.1V core/interface voltage with data rates up to 4266 Mbps (2133 MHz clock), supporting dual-channel 16-bit x2 configuration and compliant with JEDEC JESD209-4B standard for mobile and embedded memory subsystems.
For engineers reviewing the W66CL2NQUAHJ TR datasheet, W66CL2NQUAHJ TR pinout, W66CL2NQUAHJ TR application, or W66CL2NQUAHJ TR equivalent, this part delivers high-bandwidth, low-power DRAM for space-constrained SoC platforms requiring JEDEC-compliant LPDDR4 timing, on-die termination, VREF calibration, and multi-rank command bus training support.
Technical Context
This device implements a single-die-package (SDP) LPDDR4 architecture with 8 banks, 16-bit prefetch, and dual-channel DQ bus supporting burst lengths of BL16/BL32. It integrates CA VREF and DQ VREF training logic, ZQ calibration circuitry, and thermal offset compensation for stable operation across -25°C to +85°C.
The W66CL2NQUAHJ TR supports full LPDDR4 command set including MRW/MRR, MPC, self-refresh with power-down entry/exit, TRR (Target Row Refresh), and Post Package Repair (PPR). Its timing model includes tRCD/tRP/tRAS values defined per frequency set point, with tDQSCK skew control and WDQS-based write masking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 M x 8, single-channel) or 256 M x 16 (dual-channel) |
| Data Rate | Up to 4266 Mbps - enables 34.1 GB/s aggregate bandwidth in dual-channel mode |
| Supply Voltage | VDD/VDDQ = 1.1 V ± 0.07 V - matches LPDDR4 system rail requirements |
| Operating Temp | -25°C to +85°C - qualified for extended industrial temperature applications |
| Ball Count & Pitch | 200-ball WFBGA, 0.65 mm pitch - compact footprint for mobile/embedded PCB layouts |
| JEDEC Standard | JESD209-4B compliant - ensures interoperability with LPDDR4 controllers and PHYs |
| Refresh Mode | Auto-refresh, self-refresh, and Target Row Refresh (TRR) - reduces refresh overhead in thermally stressed conditions |
Pinout & Package
W66CL2NQUAHJ TR uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 0.65 mm ball pitch and 11 × 11 array layout. Pin assignment follows JEDEC LPDDR4 SDP ball map (Section 4.1 of datasheet Rev A01-003).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD / VDDQ | Core & I/O supply | Dual 1.1 V supplies decoupled separately for noise isolation between logic and I/O domains |
| CK_t / CK_c | Differential clock input | LVDS-compatible clock pair; defines all timing windows and enables frequency set point updates |
| DQS_t / DQS_c | Differential strobe | Source-synchronous read/write strobe with programmable delay and interval oscillator calibration |
| CA[0:9] | Command/address bus | 10-bit multiplexed bus carrying commands, addresses, and bank selects; supports ODT and VREF training |
| DQ[0:15] | Data bus (x16) | 16-bit bidirectional data interface with per-bit DQ calibration and masked write capability |
| RESET_n | Asynchronous reset | Active-low signal initiating power-up initialization sequence and mode register reset |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Configurable ODT for CA and DQ/DQS buses reduces stub reflections and improves signal integrity without external resistors |
| VREF Calibration | Integrated CA and DQ VREF generators with periodic auto-calibration ensure robust margin against voltage/temp drift |
| Command Bus Training | Per-rank CA training compensates for flight-time mismatch in multi-rank topologies and enables reliable high-speed command capture |
| Write Leveling | Hardware-assisted WR leveling aligns DQS-to-CK timing at controller side, critical for setup/hold compliance at 2133 MHz |
| Thermal Offset Compensation | Internal temperature sensor feeds dynamic adjustment of refresh rate and timing parameters to maintain reliability at elevated junction temps |
Applications
| Smartphone Application Processor Memory | Automotive ADAS Domain Controller |
|---|---|
|
Use Scenario: Main system memory for ARM-based application processors in flagship smartphones with dual-display and AI acceleration. IC Role / Device Role / Timing Role: LPDDR4 SDRAM serving as primary working memory with 2133 MHz clock synchronization and low-latency burst access. Use Value: Enables 34.1 GB/s bandwidth for GPU/CPU coherency traffic while maintaining 1.1 V power efficiency and JEDEC-compliant timing margins. |
Use Scenario: Real-time memory buffer for vision processing units in L2+ autonomous driving systems with ASIL-B functional safety requirements. IC Role / Device Role / Timing Role: High-reliability DRAM supporting deterministic latency for camera sensor frame buffering and neural network inference scratchpad. Use Value: Thermal offset compensation and TRR refresh reduce uncorrectable errors under sustained 85°C ambient, meeting automotive reliability targets. |
| Industrial Edge AI Gateway | Medical Imaging Portable Terminal |
|
Use Scenario: On-device inference accelerator memory in fanless edge gateways deployed in factory automation environments. IC Role / Device Role / Timing Role: Dual-channel LPDDR4 interface providing low-jitter, high-throughput data movement between FPGA fabric and AI engine. Use Value: Command bus training and ZQ calibration maintain signal integrity across wide temperature swings (-25°C to +85°C) without manual tuning. |
Use Scenario: Image reconstruction buffer in portable ultrasound and X-ray terminals requiring rapid boot and zero-failure operation. IC Role / Device Role / Timing Role: Low-power DRAM with self-refresh and power-down modes enabling instant-on functionality and battery longevity. Use Value: 1.1 V operation and optimized refresh scheduling cut active/idle power by >35% versus DDR4, extending clinical device runtime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M16D2DS-046 | 2Gb LPDDR4, 46.5 ns tRC, 0.8 mm pitch 200-ball BGA, supports 4266 Mbps but lacks TRR and thermal offset features | Targeted at consumer tablets; no automotive qualification or extended temp support | Select when cost sensitivity outweighs thermal reliability needs and TRR is unused in system design |
| K4E6E304EC-EGCG | 2Gb LPDDR4, same 200-ball WFBGA, 1.1 V, but rated only to +70°C and omits CA VREF training and MPC command support | Designed for mid-tier mobile devices; not validated for industrial or automotive thermal profiles | Choose where JEDEC compliance and basic timing meet requirements, but advanced calibration features are unnecessary |
Compared with W66CL2NQUAHJ TR, MT53E256M16D2DS-046 offers identical density and speed but requires external VREF and lacks TRR-driven reliability; K4E6E304EC-EGCG provides compatible pinout and voltage but sacrifices thermal adaptation and command-level calibration needed for harsh environments.
Availability
W66CL2NQUAHJ TR is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive ADAS domain controllers, and industrial edge AI gateways requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant LPDDR4 performance.
Supply support for W66CL2NQUAHJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile, automotive, and industrial markets.
The W66CL2NQ series is designed specifically for LPDDR4-compliant mobile and embedded platforms, emphasizing thermal resilience, signal integrity at speed, and JEDEC-standardized calibration features for seamless integration with modern SoCs.
FAQ
What is the package type and ball pitch of W66CL2NQUAHJ TR?
W66CL2NQUAHJ TR uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 0.65 mm ball pitch. This compact footprint supports high-density PCB layouts in mobile and embedded designs while maintaining thermal and electrical performance consistent with JEDEC LPDDR4 specifications. The exact ball assignment matches the Single-Die-Package (SDP) map defined in Section 4.1 of the official datasheet (Rev A01-003).
Does W66CL2NQUAHJ TR support JEDEC JESD209-4B standard?
Yes, W66CL2NQUAHJ TR fully complies with JEDEC JESD209-4B, the definitive LPDDR4 specification. It implements all mandatory commands (ACT, PRE, RD, WR, MRR, MRW, MPC), timing parameters (tRCD, tRP, tRAS), and advanced features including VREF training, command bus training, and TRR. This ensures interoperability with certified LPDDR4 controllers and PHY IP blocks in application processors and FPGAs.
What is the maximum data rate supported by W66CL2NQUAHJ TR?
W66CL2NQUAHJ TR supports a maximum data rate of 4266 Mbps, corresponding to a 2133 MHz differential clock frequency. This is achieved using a 16-bit dual-channel interface delivering up to 34.1 GB/s aggregate bandwidth. The device maintains timing compliance at this rate through hardware-assisted write leveling, DQS interval oscillator calibration, and per-pin DQ training as specified in the datasheet's AC timing tables.
Is W66CL2NQUAHJ TR qualified for automotive temperature range?
No, W66CL2NQUAHJ TR is specified for industrial temperature range (-25°C to +85°C), not automotive AEC-Q200 grade. While its thermal offset compensation and TRR refresh improve reliability at elevated temperatures, it lacks automotive qualification documentation, extended burn-in testing, and failure-in-time (FIT) reporting required for ASIL-B/C systems. For automotive use, Winbond's automotive-qualified LPDDR4 variants should be selected instead.
How does W66CL2NQUAHJ TR handle power management during idle periods?
W66CL2NQUAHJ TR supports multiple low-power states including power-down mode (with fast entry/exit), self-refresh, and deep power-down. In power-down mode, current drops to <50 µA while retaining data; self-refresh maintains data at ~100 µA with automatic refresh scheduling. These modes are controlled via CKE gating and specific command sequences, enabling dynamic power scaling in battery-powered and thermally constrained systems using W66CL2NQUAHJ TR.
W66CL2NQUAHJ TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4
- Memory Size:
- 4Gbit
- Memory Organization:
- 128M x 32
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 2.133 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66CL2NQUAHJ TR FAQ
1.How can I place an order for W66CL2NQUAHJ TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W66CL2NQUAHJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66CL2NQUAHJ TR reliable?
The price and inventory of W66CL2NQUAHJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CL2NQUAHJ TR is usually 5 days.
3.What payment methods are accepted for W66CL2NQUAHJ TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CL2NQUAHJ TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66CL2NQUAHJ TR?
W66CL2NQUAHJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66CL2NQUAHJ TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66CL2NQUAHJ TR?
For technical support, including W66CL2NQUAHJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CL2NQUAHJ TR requirements.
6.How does Aetrix verify that W66CL2NQUAHJ TR is sourced from the original manufacturer or authorized distributors?
All W66CL2NQUAHJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CL2NQUAHJ TR meets industry standards.
7.What is the process for return or replacement of W66CL2NQUAHJ TR?
All W66CL2NQUAHJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66CL2NQUAHJ TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66CL2NQUAHJ TR part is unused and in its original packaging.
Return procedure for W66CL2NQUAHJ TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66CL2NQUAHJ TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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