Winbond Electronics Corporation W66CM2NQUAFJ TR

Overview

W66CM2NQUAFJ TR from Winbond is a 4Gb LPDDR4X SDRAM in WFBGA-200 package, operating at 4266 Mbps data rate with 1.1V I/O and 0.6V core supply. It supports dual-die-package (DDP) architecture, 16-bit bus width, and JEDEC-compliant LPDDR4X features including dynamic voltage scaling, deep power-down, and on-die termination for DQ/DQS/DMI. Used in mobile SoC platforms requiring high bandwidth and low power.

For engineers reviewing the W66CM2NQUAFJ TR datasheet, W66CM2NQUAFJ TR pinout, W66CM2NQUAFJ TR application, or W66CM2NQUAFJ TR equivalent, key selection criteria include supported data rates (4266 Mbps), VDD/VDDQ voltage separation (0.6V/1.1V), DDP configuration, CA/DQ VREF training capability, and JEDEC LPDDR4X compliance for mobile and embedded memory subsystems.

Technical Context

This device implements a dual-die-package (DDP) LPDDR4X architecture with two 2Gb dies stacked in a single WFBGA-200 package, enabling 4Gb density without increasing ball count. It supports 16-bit bidirectional data bus, 10-bit column address, 17-bit row address, and 3-bit bank group addressing per die.

Timing control includes programmable read/write latencies (RL/WL), tRCD/tRP/tRC values aligned to LPDDR4X spec at 2133 MHz clock (4266 Mbps), and full support for command bus training, DQ/DQS calibration, ZQ calibration, and thermal offset compensation via integrated temperature sensor.

Key Specifications

Pinout & Package

W66CM2NQUAFJ TR uses a 200-ball WFBGA package with 10×12 array (excluding corner balls), 0.65 mm pitch, and standard LPDDR4X ball assignment for DDP configuration. Ball mapping follows JEDEC LPDDR4X layout with dedicated VDD/VSS groups, split CA/DQ power domains, and symmetric DQS/DMI placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR4X memory applications.

Compared with MT53E2G32D2DS-046 and K4U6E3046M-BCGC, W66CM2NQUAFJ TR uniquely combines DDP density, JEDEC-aligned training sequences, and Winbond's PPR implementation in a standard 0.65 mm pitch WFBGA-200 - enabling drop-in replacement for legacy W66BM6NB designs while supporting next-gen mobile bandwidth requirements.

Availability

W66CM2NQUAFJ TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment systems requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR4X interoperability.

Supply support for W66CM2NQUAFJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, RAM, and trusted computing ICs, with global manufacturing and R&D infrastructure.

The W66CM2NQ series is part of Winbond's LPDDR4X product line designed specifically for mobile and embedded applications demanding high bandwidth, low voltage operation, and advanced power management features compliant with JEDEC JESD209-4B.

FAQ

What is the package type and ball pitch of W66CM2NQUAFJ TR?

W66CM2NQUAFJ TR uses a WFBGA-200 package with dimensions of 10 mm × 12 mm × 0.65 mm and a 0.65 mm ball pitch. The ball assignment follows JEDEC LPDDR4X DDP layout, supporting dual-die stacking while maintaining compatibility with standard LPDDR4X routing guidelines and PCB stack-ups used for mobile memory interfaces.

Does W66CM2NQUAFJ TR support on-die termination for both command/address and data buses?

Yes, W66CM2NQUAFJ TR supports separate on-die termination (ODT) for command/address (ODT_CA) and data (ODT_DQ) buses. ODT states are controlled via MR registers (MR11/MR12), and each domain has independent impedance calibration using internal ZQ reference resistor, ensuring signal integrity across high-speed CA and DQ channels.

What training capabilities does W66CM2NQUAFJ TR provide for high-speed interface stability?

W66CM2NQUAFJ TR provides comprehensive training: CA VREF training, DQ VREF training, command bus training, RD DQ calibration, DQS-DQ training, READ preamble training, and WDQS control mode calibration. These are executed via MPC commands and MR register writes, enabling robust 4266 Mbps operation across voltage and temperature variations.

Is W66CM2NQUAFJ TR compatible with standard LPDDR4 controllers?

No - W66CM2NQUAFJ TR is LPDDR4X-compliant (JESD209-4B), not LPDDR4 (JESD209-3). It requires an LPDDR4X-capable memory controller supporting VDDQ scaling to 0.6V, WDQS control, TRR, and enhanced training sequences. Controllers designed only for LPDDR4 lack necessary command encoding and timing support for W66CM2NQUAFJ TR.

How does post-package repair (PPR) function in W66CM2NQUAFJ TR?

W66CM2NQUAFJ TR implements hardware-based PPR using dedicated mode registers (MR39–MR40) to store fail-row addresses detected during test. During initialization, the memory controller writes repaired row addresses into these registers, allowing automatic redirection of accesses away from defective rows - improving yield without firmware-level patching or external redundancy logic.