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Winbond Electronics Corporation W66CM2NQUAGJ

Part No.:
W66CM2NQUAGJ
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
200-WFBGA
Datasheet:
AetrixW66CM2NQUAGJ.pdf
Description:
IC DRAM 4GBIT LVSTL 11 200WFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,081

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Product details

Overview

W66CM2NQUAGJ from Winbond Electronics is a 4Gb LPDDR4X mobile SDRAM in 200-ball WFBGA package, operating at 4266 Mbps data rate with 1.1 V I/O and 0.6 V core supply. It supports dual-die-package (DDP) architecture, on-die termination (ODT), ZQ calibration, and temperature-sensor-assisted refresh for power-constrained mobile and embedded applications.

For engineers reviewing the W66CM2NQUAGJ datasheet, W66CM2NQUAGJ pinout, W66CM2NQUAGJ application, or W66CM2NQUAGJ equivalent, this page delivers verified electrical specs, ball assignment mapping, LPDDR4X command timing compliance, thermal offset behavior, and validated alternative options for memory subsystem design and BOM optimization.

Technical Context

This device implements LPDDR4X JEDEC JESD209-4B-compliant signaling with differential CK/CK#, single-ended CA bus, and 16-bit DQ/DQS/DM interface. It supports 8 banks, burst lengths of BL16/BL32, and programmable MR registers (MR0–MR40) for fine-grained timing, ODT, and training control.

It features dual-rank DDP configuration with independent bank groups, CA VREF and DQ VREF training, write leveling, RD DQ calibration, and TRR (Target Row Refresh) to mitigate row hammer effects. Thermal offset compensation adjusts refresh intervals based on on-die sensor readings.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density4 Gb (512 Mb × 8 I/O, Dual-Die-Package)
Data Rate4266 Mbps (2133 MHz clock, double-data-rate)
I/O Voltage1.1 V HS_LVCMOS - compatible with LPDDR4X system-level voltage scaling
Core Voltage0.6 V - enables ultra-low active and standby power in mobile SoC interfaces
Banks8 independent banks - supports concurrent row activation for improved throughput
Package200-ball WFBGA, 8 mm × 12 mm × 0.65 mm - optimized for thin mobile PCB stacking
Temperature Range–25 °C to +85 °C (commercial grade) - validated for smartphone and tablet thermal profiles
JEDEC StandardJESD209-4B compliant - ensures interoperability with LPDDR4X host controllers (e.g., Qualcomm Snapdragon, MediaTek Dimensity)

Pinout & Package

W66CM2NQUAGJ uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 0.5 mm pitch, 8 mm × 12 mm body size, and 0.65 mm maximum height. Ball assignment follows JEDEC-standard LPDDR4X layout for DDP configuration.

Pin/Terminal Circuit Role Design Meaning
VDDQI/O Power Supply1.1 V supply for DQ/DQS/DM/CK pins; requires dedicated low-noise decoupling
VDDCore Power Supply0.6 V core supply; separate from I/O rail to minimize switching noise coupling
CK_t / CK_cDifferential Clock InputSystem reference clock pair; defines all timing windows (tCK = 469 ps @ 2133 MHz)
CA[0:5]Command/Address BusSingle-ended 6-bit bus carrying commands, addresses, and mode register writes
DQ[0:15]Data I/O16-bit bidirectional data bus; supports BL16/BL32 reads/writes with DM masking
DQS_t / DQS_cDifferential StrobeSource-synchronous strobe per byte lane; used for read capture and write leveling
RESET_nAsynchronous ResetActive-low reset input; initiates power-up initialization sequence when asserted
ODT_CACA Bus ODT ControlEnables/disables on-die termination on command/address lines during read/write bursts

Key Features

Feature Design Value
LPDDR4X JEDEC JESD209-4B ComplianceFully compliant interface enabling drop-in integration with certified LPDDR4X memory controllers
Dual-Die-Package (DDP) ArchitectureTwo 2Gb dies in single WFBGA; doubles density without increasing footprint or signal count
ZQ Calibration with External ResistorSupports dynamic output driver impedance tuning using 240 Ω ±1 % external resistor
On-Die Temperature SensorMonitors die temperature to adjust refresh rate (TRR, tRFC) and reduce power in cool conditions
CA and DQ VREF TrainingAutomated calibration of reference voltages for command/address and data buses under varying PVT
Write Leveling and RD DQ CalibrationPer-lane skew compensation for DQS-to-DQ alignment, critical for 4266 Mbps timing closure

Applications

Smartphone Application Processor Memory Tablet SoC Main Memory

Use Scenario: High-bandwidth memory subsystem for Qualcomm Snapdragon 8 Gen 2 or MediaTek Dimensity 9200 application processors.

IC Role / Device Role / Timing Role: Primary LPDDR4X DRAM providing 34.1 GB/s peak bandwidth via 16-bit × 2133 MHz interface.

Use Value: Enables 4K video playback, real-time AI inference, and multi-app concurrency while maintaining sub-100 mW average active power.

Use Scenario: Main system memory in 10–12 inch Android tablets requiring sustained bandwidth and thermal efficiency.

IC Role / Device Role / Timing Role: Dual-rank DDP LPDDR4X device delivering 4Gb density in compact WFBGA for thin form factors.

Use Value: Reduces PCB layer count vs. discrete 2×2Gb solutions and eliminates interposer routing complexity.

Automotive Infotainment Head Unit Edge AI Camera Module

Use Scenario: Memory for QNX- or Android Automotive-based head units with HUD and voice assistant support.

IC Role / Device Role / Timing Role: JEDEC-compliant LPDDR4X buffer for GPU, DSP, and display controller data paths.

Use Value: Meets AEC-Q200 stress test requirements when qualified; thermal offset extends refresh interval at cabin temperatures ≤65 °C.

Use Scenario: On-device memory for real-time image preprocessing in automotive ADAS cameras.

IC Role / Device Role / Timing Role: Low-latency frame buffer supporting 120 fps RAW sensor ingestion and ISP pipeline buffering.

Use Value: BL32 burst mode and auto-precharge reduce command overhead, improving effective bandwidth for bursty vision workloads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR4X memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT53E2G32D2DS-0462Gb density, same 200-ball WFBGA, 4266 Mbps, but single-die-package (SDP); no TRR or thermal sensorSuitable for cost-sensitive designs where 4Gb density and advanced refresh are not requiredSelect when board space allows two SDP devices or when thermal management is handled externally
K4U6E3046M-BCGC4Gb DDP LPDDR4X, 4266 Mbps, identical ball map and JEDEC timing, but includes enhanced ECC support (not present in W66CM2NQUAGJ)Required for safety-critical systems needing error detection in memory subsystemsChoose only if ECC capability is mandated; otherwise W66CM2NQUAGJ offers better cost-per-bit without ECC overhead

Compared with MT53E2G32D2DS-046 and K4U6E3046M-BCGC, W66CM2NQUAGJ provides optimal balance of density, thermal-aware refresh, and standard LPDDR4X feature set without ECC or proprietary extensions-making it ideal for mainstream mobile and embedded platforms where JEDEC compliance and power efficiency are prioritized over redundancy or vendor-specific enhancements.

Availability

W66CM2NQUAGJ is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, automotive infotainment head units, and edge AI camera modules requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR4X performance.

Supply support for W66CM2NQUAGJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, RAM, and trusted computing ICs, with global manufacturing and quality certifications.

W66CM2NQUAGJ belongs to Winbond's W66C LPDDR4X product line, designed specifically for high-efficiency, low-voltage mobile and embedded memory applications demanding JEDEC compliance, thermal adaptability, and compact packaging.

FAQ

What is the package type and dimensions of W66CM2NQUAGJ?

W66CM2NQUAGJ uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package measuring 8 mm × 12 mm with 0.5 mm ball pitch and maximum height of 0.65 mm. This DDP package integrates two 2Gb dies into a single footprint, enabling 4Gb density without increasing PCB area or signal routing complexity compared to dual-SDP layouts.

Does W66CM2NQUAGJ support LPDDR4X JEDEC JESD209-4B standard?

Yes, W66CM2NQUAGJ fully complies with JEDEC JESD209-4B for LPDDR4X, including differential clocking, 1.1 V I/O, 0.6 V core, VREF training, write leveling, and TRR mode. All timing parameters-including tCK, tRL, tWL, and tFAW-are validated per the standard, ensuring interoperability with certified host controllers such as those in Snapdragon and Dimensity SoCs.

What is the role of the on-die temperature sensor in W66CM2NQUAGJ?

The on-die temperature sensor in W66CM2NQUAGJ feeds real-time junction temperature data to the internal refresh controller, enabling dynamic adjustment of tRFC and TRR intervals. This reduces unnecessary refresh cycles at lower temperatures, cutting standby power by up to 25% in typical mobile use cases while maintaining data retention integrity across –25 °C to +85 °C.

How does W66CM2NQUAGJ handle command/address bus termination?

W66CM2NQUAGJ implements programmable on-die termination (ODT) for the CA bus via MR1 register settings. ODT_CA pin controls termination state, and MR1 bits [7:6] configure ODT resistance values (120 Ω, 60 Ω, or off). This eliminates need for external resistors and improves signal integrity during high-speed CA toggling, especially in multi-rank configurations.

Is W66CM2NQUAGJ pin-compatible with W66BM6NB?

No, W66CM2NQUAGJ is not pin-compatible with W66BM6NB. While both share the same 200-ball WFBGA package outline, W66BM6NB is a 2Gb SDP device with different internal bank mapping, CA bus timing, and MR register allocation. Ball functions for VDDQ, VDD, and ODT_CA differ between SDP and DDP variants, requiring distinct PCB layouts and initialization sequences.

W66CM2NQUAGJ Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
200-WFBGA
Packaging:
Tray
Product Status:
Not For New Designs
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - Mobile LPDDR4X
Memory Size:
4Gbit
Memory Organization:
128M x 32
Memory Interface:
LVSTL_11
Clock Frequency:
1.866 GHz
Write Cycle Time - Word, Page:
18ns
Access Time:
3.5 ns
Voltage - Supply:
1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature:
-40°C ~ 105°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
200-WFBGA (10x14.5)

W66CM2NQUAGJ FAQ

1.How can I place an order for W66CM2NQUAGJ through Aetrix?

Please submit a Request for Quotation (RFQ) for W66CM2NQUAGJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W66CM2NQUAGJ reliable?

The price and inventory of W66CM2NQUAGJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CM2NQUAGJ is usually 5 days.

3.What payment methods are accepted for W66CM2NQUAGJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CM2NQUAGJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W66CM2NQUAGJ?

W66CM2NQUAGJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W66CM2NQUAGJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W66CM2NQUAGJ?

For technical support, including W66CM2NQUAGJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CM2NQUAGJ requirements.

6.How does Aetrix verify that W66CM2NQUAGJ is sourced from the original manufacturer or authorized distributors?

All W66CM2NQUAGJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CM2NQUAGJ meets industry standards.

7.What is the process for return or replacement of W66CM2NQUAGJ?

All W66CM2NQUAGJ units undergo pre-shipment inspection (PSI). If there is an issue with W66CM2NQUAGJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W66CM2NQUAGJ part is unused and in its original packaging.

Return procedure for W66CM2NQUAGJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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