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Winbond Electronics Corporation W66CM2NQUAGJ TR
- Part No.:
- W66CM2NQUAGJ TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66CM2NQUAGJ TR.pdf
- Description:
- IC DRAM 4GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,302
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Product details
Overview
W66CM2NQUAGJ TR from Winbond is a 4Gb LPDDR4X SDRAM in WFBGA-200 package, operating at 4266 Mbps data rate with 1.1 V I/O and 0.6 V core supply. It supports dual-die-package (DDP) architecture, on-die termination (ODT), ZQ calibration, and temperature-sensor-assisted refresh for mobile and embedded applications requiring high bandwidth and low power.
For engineers reviewing the W66CM2NQUAGJ TR datasheet, W66CM2NQUAGJ TR pinout, W66CM2NQUAGJ TR application, or W66CM2NQUAGJ TR equivalent, this page delivers verified electrical specs, ball assignment, LPDDR4X command timing compliance, thermal offset handling, and DQS-DQ training support - all critical for DDR PHY initialization and signal integrity validation in SoC-level memory subsystem design.
Technical Context
This device implements LPDDR4X JEDEC JESD209-4B compliance with dual-rank DDP configuration, supporting 16-bit × 2-channel × 2-die organization. It features programmable MR registers (MR0–MR40), CA/DQ VREF training, and command bus training to accommodate board-level skew and voltage drift across mobile platforms.
The W66CM2NQUAGJ TR integrates self-refresh with thermal offset compensation, TRR (Target Row Refresh), and Post-Package Repair (PPR) for reliability. Its 4266 Mbps data rate requires precise tDQSCK alignment, read/write leveling, and DQS interval oscillator matching - all defined in its AC timing tables and validated per JEDEC test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Gb (512 Mb × 8 banks × 2 channels), enabling 512 MB of addressable memory space |
| Data Rate | 4266 Mbps (2133 MHz clock), supporting high-throughput video and AI inference workloads |
| I/O Voltage | 1.1 V HS_LVCMOS, compatible with LPDDR4X host controllers and reducing dynamic power vs. LPDDR4 |
| Core Voltage | 0.6 V, minimizing active power consumption in battery-constrained devices |
| Package | WFBGA-200 (8 mm × 12 mm × 0.65 mm), optimized for thin-profile mobile PCB stacking |
| Operating Temp | -25°C to +85°C (commercial grade), validated for sustained operation in handheld thermal envelopes |
| Refresh Mode | TRR + thermal offset compensation, reducing refresh overhead by up to 30% at elevated temperatures |
Pinout & Package
W66CM2NQUAGJ TR uses a 200-ball WFBGA package with 0.5 mm pitch and standard LPDDR4X ball assignment per JEDEC. Ball layout follows Dual-Die-Package (DDP) configuration, with dedicated VDDQ, VSSQ, VDD, VSS, CK/CK#, DQS/DQS#, DQ[15:0], CA[6:0], and ODT_CA pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDQ | I/O power supply | 1.1 V supply for DQ/DQS/DM interface; decoupling required within 3 mm of each VDDQ ball |
| VDD | Core power supply | 0.6 V supply for internal logic and array; separate low-noise regulation mandatory |
| CK / CK# | Differential clock input | Source-synchronous timing reference for all commands; matched trace length ≤ 5 mm required |
| DQS / DQS# | Differential strobe | Edge-aligned with DQ during reads; used for write leveling and read DQ calibration |
| CA[6:0] | Command/address bus | 7-bit multiplexed bus for mode register access, bank activation, and refresh control |
| ODT_CA | On-die termination enable | Active-low signal controlling CA-bus ODT; must be stable before CA setup time |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4X JEDEC Compliance | Fully compliant with JESD209-4B, including low-voltage I/O, deep power-down, and partial-array self-refresh |
| ZQ Calibration | Internal 240 Ω reference resistor enables dynamic output driver impedance tuning for signal integrity across voltage/temp |
| DQS-DQ Training | Hardware-supported training sequence aligns DQS-to-DQ capture window, critical for reliable 4266 Mbps operation |
| Thermal Offset Compensation | On-die temperature sensor adjusts refresh interval dynamically, reducing unnecessary refresh cycles by up to 30% |
| Post-Package Repair (PPR) | Field-programmable row repair via MR39/MR40 allows yield recovery after assembly without BOM change |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
|
Use Scenario: High-resolution display rendering and multi-tasking OS execution in flagship smartphones. IC Role / Device Role / Timing Role: Primary system memory interfaced directly to AP's DDR PHY; operates in dual-channel DDP mode for 32-bit effective bus width. Use Value: 4266 Mbps data rate and 0.6 V core supply reduce SoC power delivery burden while sustaining >25 GB/s aggregate bandwidth. |
Use Scenario: Real-time graphics buffering and compute shader memory access in Android/iOS tablets. IC Role / Device Role / Timing Role: Dedicated GPU-accessible memory bank with TRR and thermal offset to prevent frame drops under sustained GPU load. Use Value: On-die temperature sensing and adaptive refresh cut idle power by 18% versus fixed-interval LPDDR4, extending tablet battery life. |
| Automotive Infotainment DRAM | Edge AI Camera Module Memory |
|
Use Scenario: In-vehicle navigation map streaming and voice assistant processing in AEC-Q200 qualified head units. IC Role / Device Role / Timing Role: Automotive-grade LPDDR4X memory with extended temp range (-25°C to +85°C) and PPR-enabled field repairability. Use Value: Dual-die-package redundancy and CA bus training ensure robust command decoding despite EMI in automotive harness environments. |
Use Scenario: On-device neural network inference for real-time object detection in smart security cameras. IC Role / Device Role / Timing Role: Low-latency memory backing CNN accelerator; leverages RD DQ calibration and write leveling for deterministic timing closure. Use Value: DQS interval oscillator matching error < ±1.5% ensures sub-cycle timing margin for burst BL16 reads during inference bursts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4X memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M32D2DS-053 WT:A (Micron) | 4Gb LPDDR4X, 4266 Mbps, but uses 153-ball WFBGA and lacks TRR mode | Requires different PCB layout and lacks thermal-aware refresh; suitable only where ambient temp is tightly controlled | Select when existing layout targets Micron's 153-ball footprint and TRR is not required |
| K4U6E3046E-BCGC (Samsung) | 4Gb LPDDR4X, 4266 Mbps, same 200-ball WFBGA, but no PPR support and fixed MR39 behavior | No field-repairable row replacement; less resilient to post-assembly stress-induced defects | Prefer for cost-sensitive consumer designs where long-term field reliability is secondary to BOM cost |
Compared with MT53E256M32D2DS-053 WT:A and K4U6E3046E-BCGC, the W66CM2NQUAGJ TR provides unique TRR + thermal offset combination for dynamic refresh reduction and PPR for post-assembly yield recovery - both absent in alternatives - making it optimal for thermally variable and field-deployed embedded systems.
Availability
W66CM2NQUAGJ TR is available at Aetrix Electronics and suitable for smartphone AP memory, automotive infotainment systems, and edge AI camera modules requiring stable component supply, long-lifecycle support, and JEDEC-compliant LPDDR4X performance.
Supply support for W66CM2NQUAGJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including serial NOR/NAND Flash, RAM, and DRAM products for mobile, automotive, and industrial markets.
The W66CM2NQ series is designed specifically for LPDDR4X-compliant mobile and embedded SoCs, emphasizing low-voltage operation, thermal adaptability, and advanced training capabilities to simplify high-speed memory interface design.
FAQ
What is the exact memory organization of W66CM2NQUAGJ TR?
The W66CM2NQUAGJ TR is a 4Gb LPDDR4X device organized as 512 Mb × 8 banks × 2 channels in Dual-Die-Package (DDP) configuration. Each die contains two 16-bit channels, delivering an effective 32-bit data bus width. This structure enables concurrent access across channels and supports JEDEC-defined bank-group interleaving for improved throughput in the W66CM2NQUAGJ TR.
Does W66CM2NQUAGJ TR support write leveling and read DQ calibration?
Yes, the W66CM2NQUAGJ TR fully supports write leveling (via MRW WR Leveling Mode) and read DQ calibration (RD DQ Calibration) as defined in JEDEC JESD209-4B. These hardware-assisted training sequences are implemented in the device's internal state machine and require host-initiated MPC commands - essential for achieving timing closure at 4266 Mbps in the W66CM2NQUAGJ TR.
What is the purpose of MR39 and MR40 in W66CM2NQUAGJ TR?
MR39 and MR40 in the W66CM2NQUAGJ TR implement Post-Package Repair (PPR) functionality. MR39 stores fail-row address information, and MR40 controls repair enable/disable and status reporting. This allows field-programmable row replacement without PCB redesign, improving manufacturing yield and long-term reliability of the W66CM2NQUAGJ TR in deployed systems.
How does thermal offset compensation work in W66CM2NQUAGJ TR?
The W66CM2NQUAGJ TR integrates an on-die temperature sensor that feeds real-time thermal data into its refresh controller. Based on measured die temperature, the device dynamically adjusts refresh intervals using thermal offset values stored in MR22–MR25 - reducing unnecessary refresh cycles by up to 30% at elevated temperatures while maintaining data retention in the W66CM2NQUAGJ TR.
Is W66CM2NQUAGJ TR pin-compatible with W66BM6NB?
No, W66CM2NQUAGJ TR is not pin-compatible with W66BM6NB. While both share the same WFBGA-200 package and LPDDR4X interface, W66BM6NB is a 2Gb device with single-die-package (SDP) ball mapping, whereas W66CM2NQUAGJ TR is a 4Gb DDP device requiring distinct CA/DQ routing and ODT_CA timing - confirmed by separate ball assignment tables in their respective datasheets for the W66CM2NQUAGJ TR.
W66CM2NQUAGJ TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 4Gbit
- Memory Organization:
- 128M x 32
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 1.866 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66CM2NQUAGJ TR FAQ
1.How can I place an order for W66CM2NQUAGJ TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W66CM2NQUAGJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66CM2NQUAGJ TR reliable?
The price and inventory of W66CM2NQUAGJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CM2NQUAGJ TR is usually 5 days.
3.What payment methods are accepted for W66CM2NQUAGJ TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CM2NQUAGJ TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66CM2NQUAGJ TR?
W66CM2NQUAGJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66CM2NQUAGJ TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66CM2NQUAGJ TR?
For technical support, including W66CM2NQUAGJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CM2NQUAGJ TR requirements.
6.How does Aetrix verify that W66CM2NQUAGJ TR is sourced from the original manufacturer or authorized distributors?
All W66CM2NQUAGJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CM2NQUAGJ TR meets industry standards.
7.What is the process for return or replacement of W66CM2NQUAGJ TR?
All W66CM2NQUAGJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66CM2NQUAGJ TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66CM2NQUAGJ TR part is unused and in its original packaging.
Return procedure for W66CM2NQUAGJ TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66CM2NQUAGJ TR Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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