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Winbond Electronics Corporation W66CM2NQUAHJ
- Part No.:
- W66CM2NQUAHJ
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66CM2NQUAHJ.pdf
- Description:
- IC DRAM 4GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,530
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Product details
Overview
W66CM2NQUAHJ from Winbond is a 4Gb LPDDR4X mobile SDRAM in 200-ball WFBGA package, operating at 4266 Mbps data rate with 1.1 V I/O and 0.6 V core supply, supporting dual-die-package architecture for high-bandwidth mobile applications including flagship smartphones and tablets.
For engineers reviewing the W66CM2NQUAHJ datasheet, W66CM2NQUAHJ pinout, W66CM2NQUAHJ application, or W66CM2NQUAHJ equivalent, key selection criteria include LPDDR4X compliance, 4266 Mbps data rate, dual-rank support, CA/DQ training capability, and thermal sensor integration for system-level power management.
Technical Context
This device implements LPDDR4X JEDEC JESD209-4B specification with dual-die-package (DDP) configuration, supporting 16 banks per die and 8-bank activation. It features programmable mode registers (MR0–MR40), on-die termination (ODT) for both command/address and DQ/DQS buses, and built-in CA/DQ/VREF training sequences.
W66CM2NQUAHJ supports self-refresh with temperature-compensated refresh (TRR), ZQ calibration for output driver matching, and multi-purpose command (MPC) execution during critical timing windows like tXSR and tRFC. Its thermal offset and integrated temperature sensor enable dynamic refresh rate adjustment based on junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4Gb (512Mb × 4 banks × 2 dies) |
| Data Rate | 4266 Mbps (2133 MHz clock, double-data-rate) |
| Supply Voltages | VDD/VDDQ = 1.1 V ±3%; VDD2 = 0.6 V ±3% - enables low-power mobile operation |
| Package | 200-ball WFBGA, 10 mm × 12 mm × 0.65 mm - optimized for thin mobile PCBs |
| JEDEC Standard | LPDDR4X JESD209-4B compliant - backward-compatible with LPDDR4 systems |
| Bank Architecture | Dual-die-package (DDP) with 16 banks per die - supports concurrent access across dies |
| Thermal Sensor | Integrated digital temperature sensor with ±3°C accuracy - enables TRR mode for dynamic refresh tuning |
Pinout & Package
W66CM2NQUAHJ uses a 200-ball WFBGA package with 0.65 mm ball pitch. Ball assignment follows JEDEC-standard LPDDR4X layout for DDP configuration, with dedicated VSS/VDD pairs, differential clocks (CK_t/CK_c), and split DQ/DQS/DM groups per byte lane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential Clock Input | Provides edge-aligned reference for all timing-critical operations; requires matched trace length and controlled impedance |
| CA[0:9] | Command/Address Bus | 10-bit multiplexed bus for mode register writes, bank activates, and precharge commands |
| DQ[0:31] | Data I/O Bus | 32-bit bidirectional data path with per-byte DQS strobes and DM masking |
| DQS_t / DQS_c[0:3] | Differential Data Strobe | Four differential strobes (one per 8-bit byte) for read/write capture timing alignment |
| RESET_n | Asynchronous Reset | Active-low signal initiating power-up initialization sequence and clearing internal state |
| ODT_CA / ODT_DQ | On-Die Termination Control | Separate ODT enable inputs for command/address and data bus termination configuration |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4X Low-Voltage I/O | 1.1 V VDDQ reduces I/O power by ~30% vs. LPDDR4 at same data rate |
| Dual-Die-Package Architecture | Enables 4Gb density in single package without increasing footprint or layer count |
| CA/DQ/VREF Training | Automated per-lane timing calibration ensures signal integrity at 4266 Mbps across PVT corners |
| Temperature-Compensated Refresh (TRR) | Reduces refresh current up to 50% at 25°C vs. fixed-rate refresh, extending battery life |
| ZQ Calibration | Dynamic output driver resistance tuning maintains signal fidelity across voltage/temperature drift |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: High-performance memory subsystem for flagship mobile SoCs requiring >34 GB/s bandwidth. IC Role / Device Role / Timing Role: Primary LPDDR4X DRAM providing burst-access main memory with sub-15 ns read latency. Use Value: Dual-die 4Gb density delivers required capacity in minimal PCB area while maintaining JEDEC-compliant timing margins. | Use Scenario: Main memory for ARM-based tablet platforms with multi-core CPU/GPU and AI accelerators. IC Role / Device Role / Timing Role: System-level DRAM supporting simultaneous CPU, GPU, and NPU traffic via bank-group interleaving. Use Value: CA/DQ training and TRR mode ensure stable operation under variable thermal load and battery voltage sag. |
| Automotive Infotainment Head Unit | 5G Mobile Hotspot Baseband Memory |
Use Scenario: Memory for QNX/Linux-based infotainment systems with real-time display and navigation rendering. IC Role / Device Role / Timing Role: LPDDR4X interface to application processor with extended temperature range support (–25°C to +85°C). Use Value: Integrated thermal sensor and TRR mode maintain refresh reliability across automotive cabin temperature swings. | Use Scenario: Baseband memory for 5G NR modems requiring low-latency, high-throughput data buffering. IC Role / Device Role / Timing Role: High-speed buffer between RF transceiver and modem DSP, supporting 4266 Mbps burst transfers. Use Value: ZQ calibration and ODT control preserve signal integrity on compact RF-adjacent PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4X memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M32D2DS-053 WT:A | 32-bit bus, 4Gb, 4266 Mbps, 200-ball WFBGA - identical density and speed but Micron's implementation lacks integrated TRR mode | Requires external thermal monitoring for refresh tuning; no on-die temperature sensor | Select when sourcing flexibility is prioritized over autonomous thermal management |
| K4U6E3046M-BGCF | 4Gb LPDDR4X, 4266 Mbps, 200-ball WFBGA - Samsung part with comparable timing but different MR register mapping for VREF calibration | Requires platform-specific initialization code due to non-identical mode register definitions | Select when existing Samsung memory firmware stack is already validated |
Compared with MT53E256M32D2DS-053 WT:A and K4U6E3046M-BGCF, W66CM2NQUAHJ provides integrated thermal sensing and TRR mode for autonomous refresh optimization - reducing software overhead and improving power efficiency in thermally dynamic mobile environments.
Availability
W66CM2NQUAHJ is available at Aetrix Electronics and suitable for smartphone application processors, tablet SoC designs, and automotive infotainment head units requiring stable component supply and long-term LPDDR4X memory availability.
Supply support for W66CM2NQUAHJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including serial flash, RAM, and mobile DRAM products for consumer, industrial, and automotive markets.
W66CM2NQUAHJ belongs to Winbond's W66C LPDDR4X product line, designed specifically for power-constrained mobile platforms demanding high bandwidth, low standby current, and JEDEC-compliant interoperability with leading application processors.
FAQ
What is the maximum data rate supported by W66CM2NQUAHJ?
W66CM2NQUAHJ supports a maximum data rate of 4266 Mbps, achieved with a 2133 MHz differential clock (CK) and double-data-rate operation. This performance level meets JEDEC LPDDR4X JESD209-4B specification requirements and is validated across the full commercial temperature range (–25°C to +85°C). The W66CM2NQUAHJ achieves this speed using calibrated DQS-DQ timing, CA training, and adaptive ODT control.
Does W66CM2NQUAHJ include an integrated temperature sensor?
Yes, W66CM2NQUAHJ integrates a digital temperature sensor with ±3°C accuracy across its operating range. This sensor directly feeds the TRR (Target Row Refresh) mode logic, enabling automatic adjustment of refresh intervals based on real-time junction temperature. The sensor output is accessible via mode register reads (MR39), and its data is used internally to reduce refresh current without external monitoring circuitry - a key feature distinguishing W66CM2NQUAHJ from many competing LPDDR4X devices.
What package type and dimensions does W66CM2NQUAHJ use?
W66CM2NQUAHJ uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package measuring 10 mm × 12 mm × 0.65 mm. The ball pitch is 0.65 mm, and the package conforms to JEDEC MO-270 standard for LPDDR4X DDP devices. This compact, low-profile package supports high-density mobile PCB layouts and is compatible with standard reflow profiles for lead-free assembly. The W66CM2NQUAHJ ball map follows dual-die-package (DDP) assignment as defined in section 4.2 of its official datasheet.
How does W66CM2NQUAHJ handle on-die termination (ODT)?
W66CM2NQUAHJ implements separate ODT controls for command/address (ODT_CA) and data (ODT_DQ) buses, each configurable via mode registers (MR1/MR2). ODT resistance values are calibrated using internal ZQ reference (240 Ω ±1%) and updated dynamically during ZQCL commands. The W66CM2NQUAHJ supports programmable ODT states including Rtt_Nom, Rtt_WR, and Rtt_Park, allowing precise impedance matching for write, read, and idle conditions - critical for signal integrity at 4266 Mbps.
Is W66CM2NQUAHJ pin-compatible with W66BM6NB?
No, W66CM2NQUAHJ is not pin-compatible with W66BM6NB. While both are Winbond LPDDR4X devices in 200-ball WFBGA packages, W66BM6NB is a 2Gb single-die-package (SDP) device with different ball assignments - particularly in DQ group distribution and power/ground pin allocation. The W66CM2NQUAHJ uses dual-die-package (DDP) layout per section 4.2 of the shared datasheet, resulting in distinct CA/DQ routing and ODT pin placement. Board-level replacement requires PCB redesign.
W66CM2NQUAHJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tray
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 4Gbit
- Memory Organization:
- 128M x 32
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 2.133 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66CM2NQUAHJ FAQ
1.How can I place an order for W66CM2NQUAHJ through Aetrix?
Please submit a Request for Quotation (RFQ) for W66CM2NQUAHJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66CM2NQUAHJ reliable?
The price and inventory of W66CM2NQUAHJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CM2NQUAHJ is usually 5 days.
3.What payment methods are accepted for W66CM2NQUAHJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CM2NQUAHJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66CM2NQUAHJ?
W66CM2NQUAHJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66CM2NQUAHJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66CM2NQUAHJ?
For technical support, including W66CM2NQUAHJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CM2NQUAHJ requirements.
6.How does Aetrix verify that W66CM2NQUAHJ is sourced from the original manufacturer or authorized distributors?
All W66CM2NQUAHJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CM2NQUAHJ meets industry standards.
7.What is the process for return or replacement of W66CM2NQUAHJ?
All W66CM2NQUAHJ units undergo pre-shipment inspection (PSI). If there is an issue with W66CM2NQUAHJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66CM2NQUAHJ part is unused and in its original packaging.
Return procedure for W66CM2NQUAHJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66CM2NQUAHJ Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
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