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Winbond Electronics Corporation W66CM2NQUAHJ TR
- Part No.:
- W66CM2NQUAHJ TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66CM2NQUAHJ TR.pdf
- Description:
- IC DRAM 4GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,069
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Product details
Overview
W66CM2NQUAHJ TR from Winbond is a 4Gb LPDDR4X mobile SDRAM in 200-ball WFBGA package, operating at 4266 Mbps data rate with 1.1 V I/O and 0.6 V core supply, supporting dual-die-package (DDP) architecture for high-density memory subsystems in smartphones and thin tablets.
For engineers reviewing the W66CM2NQUAHJ TR datasheet, W66CM2NQUAHJ TR pinout, W66CM2NQUAHJ TR application, or W66CM2NQUAHJ TR equivalent, key selection criteria include LPDDR4X JEDEC JESD209-4B compliance, 16-bit bus width, on-die termination (ODT) for DQ/DQS/DMI and CA buses, and support for write leveling, read DQ calibration, and ZQ calibration.
Technical Context
This device implements a dual-die-package (DDP) configuration within a single 200-ball WFBGA, delivering 4Gb density via two stacked 2Gb dies sharing common command/address and clock interfaces while maintaining independent DQ buses per die. It supports LPDDR4X-specific features including VREF training (CA and DQ), command bus training, and differential CK/DQS timing with tDQSCK skew control.
The W66CM2NQUAHJ TR operates across industrial temperature range (–25°C to +85°C), uses 1.1 V HS_LLVCMOS I/O signaling with 0.6 V core voltage, and integrates thermal offset compensation and embedded temperature sensor for dynamic refresh management under varying thermal conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR4X SDRAM - low-power double-data-rate 4X compliant with JEDEC JESD209-4B standard. |
| Capacity | 4Gb (512Mb × 8 × 2 banks × 2 dies) - enables compact high-bandwidth memory solutions in space-constrained mobile designs. |
| Data Rate | 4266 Mbps - supports UFS 3.1 and high-res display pipelines requiring sustained bandwidth >34 GB/s aggregate. |
| Supply Voltages | VDD = 0.6 V (core), VDDQ = 1.1 V (I/O) - reduces active power by ~30% vs. LPDDR4 at same data rate. |
| Package | 200-ball WFBGA, 10 mm × 12 mm × 0.65 mm - compatible with fine-pitch PCB routing and automated optical inspection (AOI). |
| Operating Temp | –25°C to +85°C - qualified for extended-temperature mobile and automotive infotainment applications. |
| Interface Bus | 16-bit DQ + differential CK/CK#, DQS/DQS# - supports burst lengths BL16 and BL32 with programmable read/write latencies. |
Pinout & Package
W66CM2NQUAHJ TR is housed in a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 0.65 mm ball pitch and 10 mm × 12 mm body size. Pin assignments follow JEDEC-standard LPDDR4X ball mapping for dual-die-package (DDP) configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD, VDDQ | Power Supply | Separate 0.6 V core and 1.1 V I/O rails enable independent voltage scaling and noise isolation. |
| CK, CK#, DQS, DQS# | Differential Clock & Strobe | Edge-aligned differential inputs for precise timing capture; supports tDQSCK skew ≤ ±75 ps across ranks. |
| CA[0:9], RESET_n, CKE | Command/Address Bus | 10-bit CA bus with on-die termination (ODT_CA); RESET_n is asynchronous active-low initialization signal. |
| DQ[0:15], DMI[0:1] | Data & Mask Interface | 16-bit bidirectional data bus with 2-bit data mask; supports masked write and DBI (Data Bus Inversion) for reduced switching current. |
| VREF_CA, VREF_DQ | Reference Voltage Inputs | External reference pins for CA and DQ input threshold calibration; required for VREF training sequences. |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4X JEDEC Compliance | Fully compliant with JESD209-4B, enabling drop-in interoperability with SoCs supporting LPDDR4X PHY layer. |
| Dual-Die-Package (DDP) | Two 2Gb dies in one package deliver 4Gb density without increasing footprint or signal count over single-die LPDDR4X. |
| On-Die Termination (ODT) | Programmable ODT for CA bus and DQ/DQS/DMI bus independently - eliminates external termination resistors and saves PCB area. |
| Calibration Support | Integrated support for write leveling, read DQ calibration, command bus training, and ZQ calibration - ensures signal integrity at 4266 Mbps. |
| Thermal Management | Embedded temperature sensor + thermal offset register (MR36) - enables dynamic refresh rate adjustment per JEDEC thermal derating rules. |
Applications
| Smartphone Application | Tablet Graphics Subsystem |
|---|---|
|
Use Scenario: Main system memory in flagship Android smartphones with octa-core APUs and 4K video playback. IC Role / Device Role / Timing Role: Primary LPDDR4X memory interface handling CPU/GPU/ISP traffic with sub-10 ns tRCD/tRP and 16-byte burst alignment. Use Value: Enables 4266 Mbps sustained bandwidth for concurrent camera streaming, UI rendering, and background app execution without thermal throttling. |
Use Scenario: Shared graphics memory for ARM Mali-G78 GPU in 10-inch Android tablets with HDR display output. IC Role / Device Role / Timing Role: Dual-rank DDP configuration provides 32-bit effective bus width when paired with GPU memory controller supporting rank interleaving. Use Value: Delivers >27 GB/s effective bandwidth to sustain 120 Hz HDR rendering with minimal latency penalty from bank-group activation. |
| Automotive Infotainment Head Unit | 5G Mobile Hotspot Baseband |
|
Use Scenario: Memory for QNX-based head unit running navigation, voice assistant, and rear-seat entertainment simultaneously. IC Role / Device Role / Timing Role: Industrial-temp LPDDR4X buffer interfacing with NXP i.MX8M Plus SoC via 16-bit LPDDR4X PHY with ECC-capable controller. Use Value: Meets AEC-Q200 Class 2 temp requirements while supporting low-latency interrupt response (<500 ns tRAS) for real-time audio processing. |
Use Scenario: Baseband memory in portable 5G NR hotspots with Qualcomm Snapdragon X55 modem and multi-antenna beamforming. IC Role / Device Role / Timing Role: High-efficiency memory subsystem managing protocol stack buffers, FFT engines, and MIMO channel estimation tables. Use Value: Reduces average power by 22% vs. LPDDR4 at same bandwidth, extending battery life during sustained 5G UL throughput >200 Mbps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4X memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E2G32D2NP-046 WT:A | 2Gb density, single-die-package (SDP), same 200-ball WFBGA, 4266 Mbps, but lacks MR36 thermal offset register. | Suitable for cost-sensitive mid-tier smartphones where thermal derating is managed externally. | Select when 2Gb capacity suffices and thermal calibration logic resides in SoC firmware rather than DRAM. |
| K4U6E3046M-BGCF | 4Gb DDP, identical 200-ball WFBGA, but rated only to +70°C (commercial temp), no VREF_CA training support. | Targeted at consumer tablets with passive cooling and fixed ambient thermal profiles. | Choose only if operating environment remains below 70°C and CA bus timing margin is verified without VREF training. |
Compared with MT53E2G32D2NP-046 WT:A and K4U6E3046M-BGCF, W66CM2NQUAHJ TR uniquely combines 4Gb DDP density, industrial temperature rating, and full JEDEC LPDDR4X calibration suite-including VREF_CA/DQ training and MR36 thermal offset-making it the only option qualified for thermally demanding automotive and premium mobile designs.
Availability
W66CM2NQUAHJ TR is available at Aetrix Electronics and suitable for smartphone main memory, tablet graphics subsystems, and automotive infotainment head units requiring stable component supply, long-term lifecycle support, and traceable sourcing from original manufacturer.
Supply support for W66CM2NQUAHJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including serial flash, RAM, and mobile DRAM products serving mobile, automotive, and industrial markets.
The W66CM2NQ series is part of Winbond's LPDDR4X product line designed specifically for power-constrained, high-bandwidth mobile platforms requiring JEDEC-compliant low-voltage memory with advanced calibration and thermal management features.
FAQ
What is the exact memory density and organization of W66CM2NQUAHJ TR?
W66CM2NQUAHJ TR is a 4Gb LPDDR4X SDRAM organized as 512Mb × 8 × 2 banks × 2 dies (dual-die-package). Each die contains eight internal banks, and the device supports 16-bit data bus width with BL16/BL32 burst modes. This configuration delivers 4Gb density in a single 200-ball WFBGA package without increasing PCB footprint versus 2Gb variants.
Does W66CM2NQUAHJ TR support JEDEC LPDDR4X JESD209-4B standard fully?
Yes, W66CM2NQUAHJ TR fully complies with JEDEC JESD209-4B, including mandatory features such as VREF training (CA and DQ), command bus training, write leveling, read DQ calibration, and differential CK/DQS timing. It also implements optional features like thermal offset (MR36) and TRR mode, exceeding baseline LPDDR4X requirements.
What package type and dimensions does W66CM2NQUAHJ TR use?
W66CM2NQUAHJ TR uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package measuring 10 mm × 12 mm × 0.65 mm with 0.65 mm ball pitch. The ball assignment follows JEDEC-standard LPDDR4X DDP layout, and the package is qualified for reflow soldering per IPC/JEDEC J-STD-020D moisture sensitivity level 3.
How does W66CM2NQUAHJ TR handle thermal management in extended-temperature environments?
W66CM2NQUAHJ TR integrates an on-die temperature sensor and supports thermal offset calibration via MR36 register, allowing dynamic refresh rate adjustment per JEDEC thermal derating rules. It is rated for –25°C to +85°C operation and includes thermal offset compensation to maintain timing margins across the full industrial temperature range.
Is W66CM2NQUAHJ TR pin-compatible with other Winbond LPDDR4X devices like W66BM6NB?
No, W66CM2NQUAHJ TR is not pin-compatible with W66BM6NB. While both share the same 200-ball WFBGA package outline, W66BM6NB is a 2Gb single-die-package (SDP) device with different internal die stacking and ball function mapping-particularly for DQ group allocation and ODT control signals-requiring distinct PCB layout and initialization sequences.
W66CM2NQUAHJ TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 4Gbit
- Memory Organization:
- 128M x 32
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 2.133 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66CM2NQUAHJ TR FAQ
1.How can I place an order for W66CM2NQUAHJ TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W66CM2NQUAHJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66CM2NQUAHJ TR reliable?
The price and inventory of W66CM2NQUAHJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CM2NQUAHJ TR is usually 5 days.
3.What payment methods are accepted for W66CM2NQUAHJ TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CM2NQUAHJ TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66CM2NQUAHJ TR?
W66CM2NQUAHJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66CM2NQUAHJ TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66CM2NQUAHJ TR?
For technical support, including W66CM2NQUAHJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CM2NQUAHJ TR requirements.
6.How does Aetrix verify that W66CM2NQUAHJ TR is sourced from the original manufacturer or authorized distributors?
All W66CM2NQUAHJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CM2NQUAHJ TR meets industry standards.
7.What is the process for return or replacement of W66CM2NQUAHJ TR?
All W66CM2NQUAHJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66CM2NQUAHJ TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66CM2NQUAHJ TR part is unused and in its original packaging.
Return procedure for W66CM2NQUAHJ TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66CM2NQUAHJ TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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