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Winbond Electronics Corporation W66CP2NQUAFJ

Part No.:
W66CP2NQUAFJ
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
200-WFBGA
Datasheet:
AetrixW66CP2NQUAFJ.pdf
Description:
IC DRAM 4GBIT LVSTL 11 200WFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,231

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Product details

Overview

W66CP2NQUAFJ from Winbond is a 4Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/interface voltage with 4266 Mbps data rate per pin (2133 MHz clock), supporting dual-die-package architecture and on-die termination for command/address and data buses. It serves as main memory in mobile application processors and embedded SoCs requiring high bandwidth and low power.

For engineers reviewing the W66CP2NQUAFJ datasheet, W66CP2NQUAFJ pinout, W66CP2NQUAFJ application, or W66CP2NQUAFJ equivalent, key selection criteria include LPDDR4-4266 compliance, 200-ball WFBGA footprint, MR register programmability (MR0–MR40), VREF training support, and ZQ calibration capability for signal integrity in high-speed mobile memory interfaces.

Technical Context

This device implements LPDDR4 JEDEC JESD209-4B specification with dual-rank, 8-bank architecture, supporting burst lengths of BL16/BL32 and write-leveling, read DQ calibration, and DQS-DQ training for timing closure. It features CA VREF and DQ VREF training, command bus training, and multi-purpose command (MPC) execution for dynamic configuration.

Power management includes deep power-down, self-refresh with partial array self-refresh (PASR), and controlled power-up/power-off sequences compliant with LPDDR4 timing requirements. Thermal offset compensation and integrated temperature sensor enable adaptive refresh and reliability across -25°C to +85°C operation.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Gb (512 M x 8, single-channel configuration)
Data Rate 4266 Mbps per pin (2133 MHz differential clock)
Supply Voltage VDD/VDDQ = 1.1 V ± 0.07 V; supports low-voltage mobile system design
Operating Temperature -25°C to +85°C (commercial grade); enables use in smartphones and tablets
Package WFBGA-200, 10 mm × 12 mm × 0.65 mm; compatible with fine-pitch mobile PCB assembly
JEDEC Standard Fully compliant with LPDDR4 JESD209-4B; ensures interoperability with host controllers
On-Die Termination Programmable ODT for CA bus and DQ/DQS/DMI; eliminates external termination resistors

Pinout & Package

W66CP2NQUAFJ uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 0.65 mm ball pitch, designed for space-constrained mobile applications. Pin assignment follows JEDEC LPDDR4 layout conventions for dual-die-package (DDP) configuration.

Pin/Terminal Circuit Role Design Meaning
VDD, VDDQ Core & I/O power supply Separate 1.1 V supplies enable independent noise control and power gating
CK_t / CK_c Differential clock input LVDS-compatible inputs drive internal PLL; required for all timing operations
CA[0:10], CKE, CS_n, ODT_CA Command/Address bus 11-bit address + control signals; supports on-die termination and VREF training
DQ[0:7], DQS_t/c, DMI Data bus with strobes & mask 8-bit data interface with differential DQS and data mask for BL16/BL32 reads/writes
ZQ Calibration reference Connects to 240 Ω ±1% external resistor for ODT and driver strength calibration

Key Features

Feature Design Value
LPDDR4-4266 Compliance Fully implements JESD209-4B timing, commands, and electrical specs for 2133 MHz operation
VREF Training Support CA and DQ VREF levels auto-adjusted via training sequence to compensate for voltage drift
Write-Leveling & RD DQ Calibration Enables precise DQS-to-CK alignment and DQ-to-DQS deskew for reliable high-speed capture
Partial Array Self-Refresh (PASR) Reduces self-refresh current by refreshing only active banks, extending battery life
ZQ Calibration Dynamic impedance matching of output drivers and ODT using external 240 Ω reference

Applications

Smartphone Application Processor Memory Tablet SoC Main Memory

Use Scenario: High-bandwidth memory subsystem for ARM-based application processors in flagship smartphones.

IC Role / Device Role / Timing Role: Primary LPDDR4 DRAM providing 4266 Mbps data throughput to CPU/GPU/NPU subsystems.

Use Value: Enables concurrent 4K video decode, AI inference, and multitasking without memory bottleneck.

Use Scenario: Dual-channel memory interface in mid-to-high-end Android tablets with display resolution ≥2560×1600.

IC Role / Device Role / Timing Role: 4Gb LPDDR4 component delivering low-latency access for GPU rendering and UI responsiveness.

Use Value: Supports sustained graphics performance while maintaining thermal envelope under continuous load.

Automotive Infotainment System RAM Industrial Edge AI Module Memory

Use Scenario: Memory for QNX- or Android Automotive-based head units with navigation, voice assistant, and OTA update support.

IC Role / Device Role / Timing Role: Automotive-grade LPDDR4 (AEC-Q100 qualified variant) serving as system RAM for real-time HMI processing.

Use Value: Meets -40°C to +105°C extended temperature requirement with PASR for reduced power during idle states.

Use Scenario: On-device inference acceleration in compact edge AI gateways running TensorFlow Lite or ONNX models.

IC Role / Device Role / Timing Role: Low-power, high-density memory enabling local model execution without cloud dependency.

Use Value: Provides sufficient bandwidth for INT8 tensor loads while supporting ZQ calibration for long-term signal integrity stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR4 memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT53E512M32D2NP-046 4Gb LPDDR4X, 4267 Mbps, 1.1/0.6 V dual-supply; supports higher speed grade but requires separate VDDQ=0.6V rail Targets ultra-thin laptops and premium tablets where LPDDR4X power savings are critical Select when system supports LPDDR4X voltage scaling and needs marginally higher bandwidth tolerance
K4E6E304EC-EGCG 4Gb LPDDR4, 4266 Mbps, 1.1 V only; uses 15mm × 13mm FBGA-200 package with different ball map Used in legacy Samsung Exynos platforms; incompatible pinout despite same density/speed Choose only if board layout matches Samsung's FBGA-200 mechanical and electrical footprint

Compared with MT53E512M32D2NP-046 and K4E6E304EC-EGCG, W66CP2NQUAFJ offers native 1.1 V-only operation and Winbond's WFBGA-200 mechanical compatibility, simplifying power delivery and PCB routing for new mobile designs without LPDDR4X infrastructure.

Availability

W66CP2NQUAFJ is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment systems requiring stable component supply, full traceability, and lifecycle continuity.

Supply support for W66CP2NQUAFJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, NAND Flash, and low-power DRAM for mobile and embedded markets.

W66CP2NQUAFJ belongs to Winbond's LPDDR4 product line, engineered specifically for power-constrained, high-performance mobile and automotive applications demanding JEDEC-compliant 4266 Mbps operation and advanced calibration features.

FAQ

What is the maximum data rate supported by W66CP2NQUAFJ?

W66CP2NQUAFJ supports a maximum data rate of 4266 Mbps per pin, corresponding to a 2133 MHz differential clock frequency. This performance level meets LPDDR4 JESD209-4B specification requirements and is validated across the full commercial temperature range (-25°C to +85°C). The W66CP2NQUAFJ achieves this speed using calibrated output drivers, on-die termination, and robust timing training mechanisms including write leveling and RD DQ calibration.

Does W66CP2NQUAFJ require external VREF references?

No, W66CP2NQUAFJ integrates internal VREF generators for both command/address (CA) and data (DQ) buses and supports automatic VREF training per JEDEC LPDDR4 specification. The device performs CA VREF and DQ VREF training during initialization to adapt to voltage and temperature drift, eliminating the need for external reference components and reducing system BOM count. This capability is fully implemented in W66CP2NQUAFJ and confirmed in its published timing and functional documentation.

Is W66CP2NQUAFJ pin-compatible with W66BP6NB?

W66CP2NQUAFJ and W66BP6NB share identical WFBGA-200 package dimensions and ball pitch but differ in density (4Gb vs. 2Gb) and internal die configuration (DDP vs. SDP). Their pinouts are functionally aligned per JEDEC LPDDR4 standard, allowing shared PCB footprint design; however, W66CP2NQUAFJ requires updated mode register settings and may exhibit different timing margins due to dual-die architecture. Full compatibility must be verified per application-specific validation.

What calibration features does W66CP2NQUAFJ support?

W66CP2NQUAFJ supports ZQ calibration for output driver and ODT impedance matching, CA and DQ VREF training for input threshold adaptation, command bus training for setup/hold optimization, write-leveling for DQS-to-CK alignment, RD DQ calibration for DQ-to-DQS deskew, and DQS-DQ training for read capture window maximization. All these features are documented in the official W66CP2NQUAFJ datasheet and enabled via standard LPDDR4 mode register writes and MPC commands.

What is the operating temperature range for W66CP2NQUAFJ?

W66CP2NQUAFJ is specified for commercial operation from -25°C to +85°C ambient temperature. This range is defined in the AC and DC operating conditions section of its official datasheet and validated through characterization across voltage corners and process variations. The device includes an integrated temperature sensor and thermal offset compensation to maintain timing accuracy and refresh stability within this range, making it suitable for smartphones, tablets, and industrial edge devices.

W66CP2NQUAFJ Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
200-WFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - Mobile LPDDR4
Memory Size:
4Gbit
Memory Organization:
128M x 32
Memory Interface:
LVSTL_11
Clock Frequency:
2.133 GHz
Write Cycle Time - Word, Page:
-
Access Time:
3.5 ns
Voltage - Supply:
1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature:
-40°C ~ 105°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
200-WFBGA (10x14.5)

W66CP2NQUAFJ FAQ

1.How can I place an order for W66CP2NQUAFJ through Aetrix?

Please submit a Request for Quotation (RFQ) for W66CP2NQUAFJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W66CP2NQUAFJ reliable?

The price and inventory of W66CP2NQUAFJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CP2NQUAFJ is usually 5 days.

3.What payment methods are accepted for W66CP2NQUAFJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CP2NQUAFJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W66CP2NQUAFJ?

W66CP2NQUAFJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W66CP2NQUAFJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W66CP2NQUAFJ?

For technical support, including W66CP2NQUAFJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CP2NQUAFJ requirements.

6.How does Aetrix verify that W66CP2NQUAFJ is sourced from the original manufacturer or authorized distributors?

All W66CP2NQUAFJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CP2NQUAFJ meets industry standards.

7.What is the process for return or replacement of W66CP2NQUAFJ?

All W66CP2NQUAFJ units undergo pre-shipment inspection (PSI). If there is an issue with W66CP2NQUAFJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W66CP2NQUAFJ part is unused and in its original packaging.

Return procedure for W66CP2NQUAFJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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