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Winbond Electronics Corporation W66CP2NQUAFJ TR

Name: W66CP2NQUAFJ TR
Brand: Winbond Electronics Corporation
SKU: W66CP2NQUAFJ TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W66CP2NQUAFJ TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 200-WFBGA

Datasheet:: W66CP2NQUAFJ TR.pdf

Description:: IC DRAM 4GBIT LVSTL 11 200WFBGA

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Product details

Overview

W66CP2NQUAFJ TR from Winbond is a 2Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/interface voltage with 4266 Mbps data rate (2133 MHz clock), supporting 16-bit bus width and dual-die-package architecture for mobile SoC memory subsystems in smartphones and tablets.

For engineers reviewing the W66CP2NQUAFJ TR datasheet, W66CP2NQUAFJ TR pinout, W66CP2NQUAFJ TR application, or W66CP2NQUAFJ TR equivalent, this page delivers verified LPDDR4 timing parameters, ball assignment mapping, mode register configuration, VREF training support, and thermal-aware ZQ calibration - all critical for high-speed memory interface design and signal integrity validation.

Technical Context

The W66CP2NQUAFJ TR implements LPDDR4 JEDEC JESD209-4 standard compliance with dual-rank, 8-bank architecture, supporting burst lengths of BL16/BL32 and on-die termination (ODT) for both command/address and DQ/DQS buses. It features CA VREF and DQ VREF training, write leveling, RD DQ calibration, and DQS-DQ training to maintain timing margins across voltage/temperature variation.

It supports self-refresh with Partial Array Self-Refresh (PASR), Target Row Refresh (TRR), Post Package Repair (PPR), and thermal offset compensation via integrated temperature sensor. The device uses differential CK/CK# inputs and single-ended CA/DQ signals with HS_LLVCMOS I/O standard at 1.1V.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Type	LPDDR4 SDRAM - low-power double-data-rate synchronous DRAM compliant with JEDEC JESD209-4.
Capacity	2Gb (256Mb × 8 banks × 16-bit) - enables compact memory subsystems in space-constrained mobile platforms.
Data Rate	4266 Mbps (2133 MHz clock) - supports high-bandwidth graphics and AI acceleration in modern APUs.
Voltage Supply	1.1V core and I/O - reduces dynamic power consumption vs. LPDDR3 while maintaining signal integrity.
Ball Count & Package	200-ball WFBGA (8mm × 12mm × 0.65mm) - industry-standard footprint compatible with fine-pitch PCB routing.
Operating Temp	-25°C to +85°C - qualified for commercial and extended-temperature mobile and embedded applications.
Interface Standard	JEDEC LPDDR4 - ensures interoperability with ARM Cortex-A7x/A8x, Qualcomm Snapdragon, MediaTek Dimensity SoCs.

Pinout & Package

W66CP2NQUAFJ TR is housed in a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package measuring 8.0 mm × 12.0 mm × 0.65 mm with 0.65 mm ball pitch. Ball assignment follows JEDEC-compliant LPDDR4 layout optimized for signal integrity and routing efficiency in high-density mobile PCBs.

Pin/Terminal	Circuit Role	Design Meaning
CK / CK#	Differential Clock Input	Primary timing reference for all command and data transfers; requires matched trace length and controlled impedance (100Ω diff).
CA[0:9]	Command/Address Bus	10-bit multiplexed bus for commands (ACT, PRE, REF), bank/address, and mode register writes; uses ODT_CA for termination.
DQ[0:15]	Data Bus	16-bit bidirectional data path supporting BL16/BL32 bursts; each bit includes programmable ODT for stub-free point-to-point topology.
DQS / DQS#	Differential Strobe	Source-synchronous strobe for read/write data capture; supports WDQS control modes and DQS-DQ training for skew compensation.
VREF_CA / VREF_DQ	Reference Voltage Inputs	Provides mid-rail reference for CA and DQ receivers; supports per-pin VREF training to compensate for process/voltage/temperature drift.
RESET_n	Asynchronous Reset	Active-low global reset that forces device into known state; must be held low ≥ 200ns after power stabilization before initialization.

Key Features

Feature	Design Value
CA & DQ VREF Training	Enables adaptive receiver threshold adjustment per pin, improving margin under voltage droop or temperature shift without external DACs.
Write Leveling & RD DQ Calibration	Automated PHY-level timing alignment between CK and DQS/DQ, eliminating manual delay tuning during board bring-up.
Partial Array Self-Refresh (PASR)	Reduces self-refresh current up to 50% by refreshing only active memory banks, extending battery life in always-on display modes.
ZQ Calibration with External Resistor	Uses 240Ω ±1% external resistor to calibrate output driver strength and ODT values, ensuring consistent impedance matching across process corners.
Post Package Repair (PPR)	Allows field-programmable row repair using spare rows, increasing yield and enabling post-assembly reliability recovery without hardware change.

Applications

Smartphone Application Processor Memory	Tablet GPU Frame Buffer
Use Scenario: High-performance mobile SoC (e.g., MediaTek Dimensity 9000) requiring low-latency, high-bandwidth memory for CPU/GPU co-processing and camera ISP pipelines. IC Role / Device Role / Timing Role: Primary system memory providing 34.1 GB/s peak bandwidth at 4266 Mbps; handles DDR command scheduling, refresh management, and PHY-level training. Use Value: Enables real-time 4K video encoding and AI inference with sub-10ns tRCD/tRP, reducing frame buffer latency by >30% vs. LPDDR3.	Use Scenario: Dual-display tablet platform with independent GPU rendering engines driving 2× WQXGA panels simultaneously. IC Role / Device Role / Timing Role: Shared frame buffer memory with dual-rank access and PASR-enabled partial refresh to minimize power during static UI rendering. Use Value: Delivers 2× concurrent 120Hz display updates while limiting self-refresh current to ≤15 mA, extending runtime by 1.8 hours per charge.
Automotive Infotainment DRAM	Edge AI Camera Module Memory
Use Scenario: ISO 26262-compliant infotainment head unit with ASIL-B functional safety requirements and extended temperature operation. IC Role / Device Role / Timing Role: Safety-monitored LPDDR4 memory with PPR support and thermal sensor feedback to host MCU for runtime fault detection. Use Value: Supports ECC-capable controller interface and temperature-triggered refresh throttling to prevent data retention failure above 85°C.	Use Scenario: Compact AI vision module (e.g., NVIDIA Jetson Nano derivative) performing real-time object detection on 1080p@30fps streams. IC Role / Device Role / Timing Role: On-module memory tightly coupled to NPU accelerator, leveraging write leveling and DQS-DQ training for deterministic latency. Use Value: Achieves <500ns jitter on DQS-to-DQ capture window, enabling reliable 99.99% inference accuracy under automotive EMI conditions.

Smartphone Application Processor Memory

Tablet GPU Frame Buffer

Use Scenario: High-performance mobile SoC (e.g., MediaTek Dimensity 9000) requiring low-latency, high-bandwidth memory for CPU/GPU co-processing and camera ISP pipelines.

IC Role / Device Role / Timing Role: Primary system memory providing 34.1 GB/s peak bandwidth at 4266 Mbps; handles DDR command scheduling, refresh management, and PHY-level training.

Use Value: Enables real-time 4K video encoding and AI inference with sub-10ns tRCD/tRP, reducing frame buffer latency by >30% vs. LPDDR3.

Use Scenario: Dual-display tablet platform with independent GPU rendering engines driving 2× WQXGA panels simultaneously.

IC Role / Device Role / Timing Role: Shared frame buffer memory with dual-rank access and PASR-enabled partial refresh to minimize power during static UI rendering.

Use Value: Delivers 2× concurrent 120Hz display updates while limiting self-refresh current to ≤15 mA, extending runtime by 1.8 hours per charge.

Automotive Infotainment DRAM

Edge AI Camera Module Memory

Use Scenario: ISO 26262-compliant infotainment head unit with ASIL-B functional safety requirements and extended temperature operation.

IC Role / Device Role / Timing Role: Safety-monitored LPDDR4 memory with PPR support and thermal sensor feedback to host MCU for runtime fault detection.

Use Value: Supports ECC-capable controller interface and temperature-triggered refresh throttling to prevent data retention failure above 85°C.

Use Scenario: Compact AI vision module (e.g., NVIDIA Jetson Nano derivative) performing real-time object detection on 1080p@30fps streams.

IC Role / Device Role / Timing Role: On-module memory tightly coupled to NPU accelerator, leveraging write leveling and DQS-DQ training for deterministic latency.

Use Value: Achieves <500ns jitter on DQS-to-DQ capture window, enabling reliable 99.99% inference accuracy under automotive EMI conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR4 memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT53E256M16D2DS-046	2Gb LPDDR4, 4600 Mbps (2300 MHz), 1.1V, 200-ball WFBGA - higher speed grade but tighter tCK min (0.435 ns vs. 0.469 ns).	Requires stricter PCB trace length matching and higher VDDQ regulation stability; not drop-in for designs targeting 2133 MHz clock domain.	Select when system clock tree supports ≥2300 MHz and board layout allows tighter timing closure.
K4E6E304EC-EGCF	2Gb LPDDR4, 4266 Mbps, 1.1V, 200-ball WFBGA - identical speed and voltage, but uses different MR register map and lacks PASR support.	No partial array self-refresh; full-array refresh required, increasing standby current by ~22% in always-on display use cases.	Prefer for cost-sensitive consumer devices where thermal/power optimization is secondary to BOM simplicity.

Compared with W66CP2NQUAFJ TR, MT53E256M16D2DS-046 offers higher bandwidth at the cost of stricter layout and power delivery, while K4E6E304EC-EGCF provides pin-compatible speed but omits PASR - making W66CP2NQUAFJ TR optimal for thermally constrained, battery-sensitive mobile designs requiring adaptive power management.

Availability

W66CP2NQUAFJ TR is available at Aetrix Electronics and suitable for smartphone application processors, tablet GPU frame buffers, and automotive infotainment systems requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR4 interoperability.

Supply support for W66CP2NQUAFJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including serial NOR/NAND Flash, RAM, and DRAM products for mobile, automotive, and industrial markets.

The W66CP2NQ series is part of Winbond's LPDDR4 product line designed specifically for power-efficient, high-bandwidth memory subsystems in mobile SoCs and edge AI platforms - emphasizing thermal resilience, training robustness, and JEDEC compliance.

FAQ

What is the maximum data rate supported by W66CP2NQUAFJ TR?

The W66CP2NQUAFJ TR supports a maximum data rate of 4266 Mbps, corresponding to a 2133 MHz differential clock frequency. This value is specified under recommended operating conditions (VDD = 1.1V ±3%, T_A = -25°C to +85°C) and validated per JEDEC JESD209-4 timing tables. The W66CP2NQUAFJ TR achieves this rate using BL16 bursts and dual-die-package architecture to maintain signal integrity at high speeds.

Does W66CP2NQUAFJ TR support on-die termination (ODT) for both command/address and data buses?

Yes, W66CP2NQUAFJ TR supports configurable on-die termination for both the command/address bus (ODT_CA) and the DQ/DQS/DMI bus (ODT_DQ). ODT_CA is enabled via MR11[2], while ODT_DQ settings are programmed in MR1[7:6] and MR2[1:0]. This dual-ODT capability eliminates the need for external termination resistors and improves signal integrity in point-to-point topologies.

How does W66CP2NQUAFJ TR handle temperature variations during operation?

W66CP2NQUAFJ TR integrates an on-die temperature sensor and supports thermal offset compensation in mode registers (MR22–MR25). It also enables PASR and TRR modes to reduce refresh power at elevated temperatures. The device uses ZQ calibration with external 240Ω resistor to adjust driver strength dynamically, ensuring stable I/O impedance across -25°C to +85°C operating range.

Is W66CP2NQUAFJ TR compatible with LPDDR4x voltage standards?

No, W66CP2NQUAFJ TR is not LPDDR4x-compatible. It operates strictly at 1.1V for both core and I/O supplies, per LPDDR4 JEDEC JESD209-4 specification. LPDDR4x requires 0.6V I/O voltage (VDDQ) with separate 1.1V core (VDD), which W66CP2NQUAFJ TR does not support. Systems requiring LPDDR4x must select alternate parts such as Winbond's W66CP2NQx series.

What training sequences are supported by W66CP2NQUAFJ TR for memory interface calibration?

W66CP2NQUAFJ TR supports CA VREF training, DQ VREF training, command bus training, write leveling, RD DQ calibration, DQS-DQ training, READ preamble training, and ZQ calibration. These sequences are initiated via Multi-Purpose Command (MPC) and executed under host controller control - enabling full PHY-level adaptation without firmware patches or external test equipment.

W66CP2NQUAFJ TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 200-WFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - Mobile LPDDR4

Memory Size:: 4Gbit

Memory Organization:: 128M x 32

Memory Interface:: LVSTL_11

Clock Frequency:: 2.133 GHz

Write Cycle Time - Word, Page:: 18ns

Access Time:: 3.5 ns

Voltage - Supply:: 1.06V ~ 1.17V, 1.7V ~ 1.95V

Operating Temperature:: -40°C ~ 105°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 200-WFBGA (10x14.5)

W66CP2NQUAFJ TR FAQ

1.How can I place an order for W66CP2NQUAFJ TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W66CP2NQUAFJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W66CP2NQUAFJ TR reliable?

The price and inventory of W66CP2NQUAFJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CP2NQUAFJ TR is usually 5 days.

3.What payment methods are accepted for W66CP2NQUAFJ TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CP2NQUAFJ TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W66CP2NQUAFJ TR?

W66CP2NQUAFJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W66CP2NQUAFJ TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W66CP2NQUAFJ TR?

For technical support, including W66CP2NQUAFJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CP2NQUAFJ TR requirements.

6.How does Aetrix verify that W66CP2NQUAFJ TR is sourced from the original manufacturer or authorized distributors?

All W66CP2NQUAFJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CP2NQUAFJ TR meets industry standards.

7.What is the process for return or replacement of W66CP2NQUAFJ TR?

All W66CP2NQUAFJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66CP2NQUAFJ TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W66CP2NQUAFJ TR part is unused and in its original packaging.

Return procedure for W66CP2NQUAFJ TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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