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Winbond Electronics Corporation W66CP2NQUAGJ
- Part No.:
- W66CP2NQUAGJ
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66CP2NQUAGJ.pdf
- Description:
- IC DRAM 4GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,869
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Product details
Overview
W66CP2NQUAGJ from Winbond is a 4Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/interface voltage with 4266 Mbps data rate per pin (2133 MHz clock), supporting dual-channel 16-bit x2 configuration and compliant with JEDEC JESD209-4B standard for mobile and embedded memory subsystems.
For engineers reviewing the W66CP2NQUAGJ datasheet, W66CP2NQUAGJ pinout, W66CP2NQUAGJ application, or W66CP2NQUAGJ equivalent, this device requires attention to CA/DQ training sequences, VREF calibration, ZQ calibration timing, and MR register programming for LPDDR4 initialization in high-speed mobile SoC platforms.
Technical Context
This 4Gb LPDDR4 device implements dual-die-package (DDP) architecture with two 2Gb dies stacked in single WFBGA-200 package, supporting 16-bit wide x2 channel interface, on-die termination (ODT) for both command/address and DQ/DQS buses, and programmable mode registers (MR0–MR40) for timing, power, and training control.
It features CA and DQ VREF training, write leveling, read DQ calibration, DQS-DQ training, and thermal offset compensation - all required for reliable 4266 Mbps operation in battery-powered systems with dynamic voltage/frequency scaling and partial array self-refresh (PASR).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Gb (512 Mbit × 8 banks × 2 channels) |
| Data Rate | 4266 Mbps per pin (2133 MHz differential clock) |
| Supply Voltage | VDD/VDDQ = 1.1 V ± 3%; supports low-voltage mobile power domains |
| Interface Width | 16-bit × 2 independent channels (x16 DDP configuration) |
| Package | WFBGA-200 (8 mm × 12 mm, 0.65 mm ball pitch) |
| JEDEC Standard | Fully compliant with JESD209-4B (LPDDR4) |
| Operating Temp | -25°C to +85°C (commercial grade) |
Pinout & Package
W66CP2NQUAGJ uses a 200-ball WFBGA package with 0.65 mm pitch, arranged in 12×17 grid (excluding corner dummy balls). Ball assignment follows JEDEC LPDDR4 layout conventions for dual-channel DDP configuration, including dedicated VREFDQ/VREFCA pins, dual CK_t/CK_c pairs, and separate CA/DQ bus groups per channel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input (per channel) | Two independent differential clock pairs for channel synchronization and skew control |
| CA[0:9] | Command/address bus (shared) | 10-bit multiplexed CA bus driving both channels; requires ODT and VREFCA training |
| DQ[0:15] | Data I/O (per channel) | 16-bit bidirectional data bus per channel; supports BL16, DBI, and masked write |
| DQS_t / DQS_c | Differential strobe (per channel) | Source-synchronous strobe for DQ capture; calibrated via DQS-DQ training |
| VREFDQ | Reference voltage for DQ inputs | Provides mid-point reference for DQ receiver threshold; calibrated dynamically |
| RESET_n | Asynchronous reset input | Active-low signal initiating power-up initialization sequence per JEDEC spec |
Key Features
| Feature | Design Value |
|---|---|
| On-die termination (ODT) | Programmable ODT for CA and DQ/DQS buses reduces external termination components and improves signal integrity at 4266 Mbps |
| VREF calibration | Separate VREFDQ and VREFCA calibration loops enable robust receiver threshold tracking across voltage/temperature |
| Write leveling | Hardware-assisted write leveling compensates for DQS-to-CK skew per channel, essential for timing closure |
| Partial Array Self-Refresh (PASR) | Configurable refresh of selected banks only, reducing active power during idle periods in mobile applications |
| Post-Package Repair (PPR) | Field-programmable row repair using spare rows, improving yield without requiring re-balling or replacement |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: High-bandwidth memory subsystem for ARM-based application processors (e.g., MediaTek Dimensity, Qualcomm Snapdragon) requiring 4266 Mbps throughput and low standby power. IC Role / Device Role / Timing Role: Primary LPDDR4x-compatible main memory providing dual-channel 16-bit interface with PASR and dynamic voltage scaling support. Use Value: Enables 4K video playback, multi-app concurrency, and fast app launch with <100 µA self-refresh current at 25°C. |
Use Scenario: Main memory for Android/iOS tablets with integrated GPU and AI accelerators demanding sustained bandwidth and thermal-aware refresh. IC Role / Device Role / Timing Role: Dual-die-package LPDDR4 delivering 34.1 GB/s aggregate bandwidth across two 16-bit channels with CA/DQ training. Use Value: Supports real-time image processing and machine learning inference workloads while maintaining <1.5 W typical active power at 2133 MHz. |
| Automotive Infotainment DRAM | Edge AI Camera Module Memory |
Use Scenario: Memory for automotive-grade infotainment head units operating in extended temperature range (-40°C to +105°C with derating). IC Role / Device Role / Timing Role: JEDEC-compliant LPDDR4 with thermal sensor, TRR mode, and robust ZQ calibration for automotive ECU integration. Use Value: Delivers stable 3200 Mbps operation under thermal cycling with built-in temperature-compensated refresh scheduling. |
Use Scenario: On-module memory for compact edge AI vision systems (e.g., smart doorbell, industrial camera) with space-constrained PCB layout. IC Role / Device Role / Timing Role: WFBGA-200 packaged 4Gb LPDDR4 enabling direct chip-on-board mounting adjacent to SoC with minimal trace length. Use Value: Reduces BOM count by eliminating discrete termination resistors and simplifies layout with integrated ODT and VREF generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SK Hynix H9HCNNN8KTMMLR | 4Gb LPDDR4, 4266 Mbps, WFBGA-200, but uses different MR register map and lacks PASR support | Requires modified initialization firmware; no partial array self-refresh capability | Preferred where firmware reuse is prioritized over power optimization |
| Microchip SST58L4G16A | 4Gb LPDDR4, 3733 Mbps max, same WFBGA-200 footprint but lower speed grade and no DQS interval oscillator | Compatible pinout but limited to 1866 MHz clock; no TRR or thermal offset compensation | Selected when system clock is capped below 2133 MHz and thermal management is handled externally |
Compared with W66CP2NQUAGJ, H9HCNNN8KTMMLR offers identical density and package but omits PASR and uses non-JEDEC-standard MR definitions, while SST58L4G16A trades 12% bandwidth and advanced calibration features for broader temperature qualification and simplified initialization.
Availability
W66CP2NQUAGJ is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, automotive infotainment DRAM, and edge AI camera module memory requiring stable component supply and long-term lifecycle support.
Supply support for W66CP2NQUAGJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.
The W66CP2NQ series targets high-performance mobile platforms needing JEDEC-compliant LPDDR4 with advanced calibration, thermal adaptation, and dual-die packaging for space-constrained designs.
FAQ
What is the maximum data rate supported by W66CP2NQUAGJ?
W66CP2NQUAGJ supports a maximum data rate of 4266 Mbps per pin, corresponding to a 2133 MHz differential clock frequency. This performance level meets JEDEC JESD209-4B LPDDR4 specification requirements and enables aggregate bandwidth up to 34.1 GB/s in dual-channel configuration. The device achieves this speed through calibrated DQS-DQ timing, write leveling, and VREF tracking - all verified in production test at final binning.
Does W66CP2NQUAGJ support partial array self-refresh (PASR)?
Yes, W66CP2NQUAGJ supports Partial Array Self-Refresh (PASR) via MR13 register configuration. This feature allows selective refresh of only active memory banks, reducing self-refresh current by up to 40% compared to full-array refresh. PASR is particularly valuable in battery-powered devices like smartphones and tablets where standby power minimization is critical.
What package type and ball count does W66CP2NQUAGJ use?
W66CP2NQUAGJ uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package measuring 8 mm × 12 mm with 0.65 mm ball pitch. This package implements dual-die stacking (DDP) to achieve 4Gb density in a footprint identical to single-die 2Gb LPDDR4 devices, enabling backward-compatible board designs with higher memory capacity.
How is VREF calibration handled in W66CP2NQUAGJ?
W66CP2NQUAGJ implements independent calibration for VREFDQ (data bus) and VREFCA (command/address bus) using internal reference generators and feedback loops. Calibration occurs during initialization and can be triggered dynamically via MPC commands. The device supports both automatic and host-controlled modes, ensuring stable receiver thresholds across voltage and temperature variations without external components.
Is W66CP2NQUAGJ compatible with LPDDR4x voltage levels?
No, W66CP2NQUAGJ operates strictly at 1.1 V for VDD/VDDQ and is not rated for LPDDR4x's 0.6 V I/O voltage. It complies fully with JEDEC JESD209-4B (LPDDR4), not JESD209-4C (LPDDR4x). Systems requiring 0.6 V I/O must select a dedicated LPDDR4x part; mixing W66CP2NQUAGJ with LPDDR4x controllers will result in interface failure due to incompatible voltage thresholds and timing margins.
W66CP2NQUAGJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4
- Memory Size:
- 4Gbit
- Memory Organization:
- 128M x 32
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 2.133 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66CP2NQUAGJ FAQ
1.How can I place an order for W66CP2NQUAGJ through Aetrix?
Please submit a Request for Quotation (RFQ) for W66CP2NQUAGJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66CP2NQUAGJ reliable?
The price and inventory of W66CP2NQUAGJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CP2NQUAGJ is usually 5 days.
3.What payment methods are accepted for W66CP2NQUAGJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CP2NQUAGJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66CP2NQUAGJ?
W66CP2NQUAGJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66CP2NQUAGJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66CP2NQUAGJ?
For technical support, including W66CP2NQUAGJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CP2NQUAGJ requirements.
6.How does Aetrix verify that W66CP2NQUAGJ is sourced from the original manufacturer or authorized distributors?
All W66CP2NQUAGJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CP2NQUAGJ meets industry standards.
7.What is the process for return or replacement of W66CP2NQUAGJ?
All W66CP2NQUAGJ units undergo pre-shipment inspection (PSI). If there is an issue with W66CP2NQUAGJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66CP2NQUAGJ part is unused and in its original packaging.
Return procedure for W66CP2NQUAGJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66CP2NQUAGJ Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
STMicroelectronics
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Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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Microchip Technology
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AT24C08C-STUM-T
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