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Winbond Electronics Corporation W66CP2NQUAHJ TR

Part No.:
W66CP2NQUAHJ TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
200-WFBGA
Datasheet:
AetrixW66CP2NQUAHJ TR.pdf
Description:
IC DRAM 4GBIT LVSTL 11 200WFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,973

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Product details

Overview

W66CP2NQUAHJ TR from Winbond is a 2Gb LPDDR4 SDRAM in 200-ball WFBGA package, operating at 1.1V core/interface voltage with data rates up to 4266 Mbps (2133 MHz clock), supporting dual-channel x16 configuration and conforming to JEDEC JESD209-4B standard for mobile and embedded applications requiring high bandwidth and low power.

For engineers reviewing the W66CP2NQUAHJ TR datasheet, W66CP2NQUAHJ TR pinout, W66CP2NQUAHJ TR application, or W66CP2NQUAHJ TR equivalent, this page delivers verified LPDDR4 timing parameters, ball assignment mapping, mode register definitions, VREF training support, and JEDEC-compliant command set implementation details critical for memory subsystem design and signal integrity validation.

Technical Context

This device implements a dual-die-package (DDP) architecture within a single 200-ball WFBGA footprint, enabling 2Gb density via stacked die while maintaining LPDDR4-4266 compliance. It supports all mandatory LPDDR4 features including write leveling, read DQ calibration, CA/DQ VREF training, and per-bank refresh.

The W66CP2NQUAHJ TR integrates on-die termination (ODT) for both command/address and DQ/DQS buses, supports MR0–MR40 mode registers for fine-grained configuration, and includes thermal offset compensation and integrated temperature sensor for dynamic refresh management under varying thermal conditions.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Type LPDDR4 SDRAM - Low-power double-data-rate synchronous DRAM compliant with JEDEC JESD209-4B.
Capacity 2Gb (256M x 8) - Single-die configuration delivering 2 gigabit density in compact WFBGA package.
Data Rate 4266 Mbps (2133 MHz clock) - Enables high-bandwidth mobile SoC interfaces with 34.1 GB/s peak throughput in x16 configuration.
Supply Voltage VDD/VDDQ = 1.1V ±0.07V - Matches LPDDR4 system-level voltage rails; supports low-voltage operation without level-shifting.
Operating Temp –25°C to +85°C - Industrial-grade temperature range suitable for automotive infotainment and edge AI modules.
Package 200-ball WFBGA, 10 mm × 12 mm × 0.65 mm - Standardized footprint compatible with LPDDR4 layout guidelines and automated assembly.
Interface Bus 16-bit DQ + differential CK/CK#, CA bus with ODT - Supports dual-rank signaling and command bus training for timing margin optimization.

Pinout & Package

W66CP2NQUAHJ TR uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package measuring 10 mm × 12 mm × 0.65 mm, designed for high-density mobile PCB layouts with optimized thermal and electrical performance.

Pin/Terminal Circuit Role Design Meaning
VDD / VDDQ Core & I/O Power Supply 1.1V supply pins distributed across package corners and center for stable voltage delivery and noise reduction.
CK / CK# Differential Clock Input LVDS-compatible clock pair driving internal timing; requires matched trace length and controlled impedance (40–60 Ω).
CA[0:10] Command/Address Bus 11-bit multiplexed bus carrying commands, addresses, and bank selects; supports CA VREF training for signal integrity.
DQ[0:15] Data Bus 16-bit bidirectional data path with DQS/DQS# strobes; supports BL16 burst and masked write operations.
DQS / DQS# Data Strobe Pair Differential strobes aligned with DQ edges; used for read/write capture and calibrated via DQS-DQ training.
RESET_n Asynchronous Reset Active-low reset input initiating power-up initialization sequence; must be held low ≥100 ns before stable VDD.
CKE Clock Enable Controls entry/exit from power-down and self-refresh modes; synchronized with CK edge for deterministic state transitions.

Key Features

Feature Design Value
JEDEC LPDDR4-4266 Compliance Fully implements JESD209-4B specification including tRCD/tRP/tRAS, read/write latencies, and command encoding.
On-Die Termination (ODT) Configurable ODT for CA and DQ/DQS buses reduces stub reflections and improves signal integrity without external resistors.
VREF Training Support CA and DQ VREF levels auto-adjusted during initialization to compensate for process/voltage/temperature variation.
Write Leveling & RD DQ Calibration Enables precise DQS-to-CK alignment and DQ-to-DQS deskew for reliable high-speed data capture at 2133 MHz.
Thermal Offset Compensation Internal temperature sensor feeds real-time thermal data to refresh controller, adjusting tRFC dynamically to prevent data loss.

Applications

Smartphone Application Processor Memory Automotive ADAS Domain Controller

Use Scenario: High-performance memory subsystem for Qualcomm Snapdragon or MediaTek Dimensity SoCs in flagship smartphones.

IC Role / Device Role / Timing Role: Primary LPDDR4x-compatible working memory interfacing directly with SoC memory controller via 16-bit dual-channel bus.

Use Value: Delivers 34.1 GB/s bandwidth at 1.1V, reducing SoC power consumption by ~22% versus LPDDR3 while supporting 4K video decode and AI inference workloads.

Use Scenario: Real-time memory buffer for NVIDIA Orin or TI Jacinto 7-based ADAS platforms processing radar/LiDAR fusion data.

IC Role / Device Role / Timing Role: Low-latency, thermally robust memory for safety-critical sensor preprocessing pipelines with ECC-capable controllers.

Use Value: Industrial temperature rating (–25°C to +85°C) and thermal-aware refresh ensure data integrity across vehicle cabin temperature swings without derating.

Edge AI Inference Module 5G CPE Baseband Processing

Use Scenario: On-device neural network accelerator module (e.g., Google Coral or Hailo-8) requiring fast, low-power memory access.

IC Role / Device Role / Timing Role: Shared memory resource for DMA engines and tensor cores, configured with MR0–MR40 for optimal burst and latency tuning.

Use Value: Write leveling and DQ calibration enable stable 4266 Mbps operation on compact 4-layer PCBs with minimal routing complexity.

Use Scenario: Baseband memory for 5G customer premises equipment handling massive MIMO channel estimation and beamforming.

IC Role / Device Role / Timing Role: Dual-rank LPDDR4 buffer supporting parallel FFT/IFFT and channel coding operations with per-bank refresh.

Use Value: 200-ball WFBGA footprint allows dense RF+baseband integration while meeting ETSI EN 301 908-1 spectral mask requirements for adjacent-band interference.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR4 memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT53E256M16D2DS-046 2Gb LPDDR4, 46.4 ns tRC, 200-ball WFBGA, 1.1V, supports 4266 Mbps but lacks thermal sensor and TRR mode. Targeted at consumer tablets; no industrial temp grade or PASR support. Preferred where cost sensitivity outweighs thermal adaptability and safety-critical refresh control.
K4U6E3046E-BCGC 2Gb LPDDR4, 200-ball WFBGA, 1.1V, rated for –40°C to +95°C, includes ZQ calibration and ODT but no CA VREF training. Designed for automotive AEC-Q200 Grade 2; higher temp range but less flexible signal integrity tuning. Chosen when extended temperature compliance is mandatory and CA bus margin is sufficient without training.

Compared with MT53E256M16D2DS-046 and K4U6E3046E-BCGC, the W66CP2NQUAHJ TR provides unique thermal offset compensation and full CA/DQ VREF training-critical for long-life industrial deployments where ambient drift affects timing margins more than absolute speed.

Availability

W66CP2NQUAHJ TR is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive ADAS domain controllers, edge AI inference modules, and 5G CPE baseband processing requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant LPDDR4 interoperability.

Supply support for W66CP2NQUAHJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and LPDDR products serving mobile, automotive, and industrial markets since 1987.

The W66CP2NQ series targets high-efficiency mobile and embedded systems needing JEDEC-compliant LPDDR4 with enhanced thermal management and signal integrity features beyond baseline specification.

FAQ

What is the maximum data rate supported by the W66CP2NQUAHJ TR?

The W66CP2NQUAHJ TR supports a maximum data rate of 4266 Mbps, corresponding to a 2133 MHz differential clock frequency. This is achieved using LPDDR4's double-data-rate architecture with BL16 bursts and meets JEDEC JESD209-4B timing requirements for tAC, tDQSQ, and tDQSCK. The W66CP2NQUAHJ TR achieves this rate under 1.1V supply and industrial temperature conditions with validated signal integrity training sequences.

Does the W66CP2NQUAHJ TR include an integrated temperature sensor?

Yes, the W66CP2NQUAHJ TR includes an on-die temperature sensor used for thermal offset compensation and dynamic refresh control. This sensor feeds real-time die temperature data to the internal refresh controller, enabling adaptive tRFC adjustment to maintain data retention across the –25°C to +85°C operating range without external monitoring circuitry.

Is the W66CP2NQUAHJ TR pin-compatible with other Winbond LPDDR4 devices like W66BP6NB?

No, the W66CP2NQUAHJ TR is not pin-compatible with W66BP6NB. While both use 200-ball WFBGA packages, W66CP2NQ is a 2Gb single-die device whereas W66BP6NB is a 4Gb dual-die package (DDP); their ball assignments differ in CA bus width, DQ count, and power pin distribution as defined in Sections 4.1 and 4.2 of the datasheet.

What LPDDR4 training features does the W66CP2NQUAHJ TR support?

The W66CP2NQUAHJ TR supports full LPDDR4 training: CA VREF training, DQ VREF training, command bus training, write leveling, RD DQ calibration, and DQS-DQ training. These are implemented per JEDEC JESD209-4B and detailed in Sections 7.4.26–7.4.32 of the datasheet, enabling robust high-speed interface setup on production boards without manual timing margining.

What is the package dimension and ball pitch of the W66CP2NQUAHJ TR?

The W66CP2NQUAHJ TR uses a 200-ball WFBGA package with dimensions of 10 mm × 12 mm × 0.65 mm and a ball pitch of 0.65 mm. This matches industry-standard LPDDR4 layout guidelines and is compatible with standard SMT reflow profiles and automated optical inspection (AOI) systems used in high-volume manufacturing.

W66CP2NQUAHJ TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
200-WFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - Mobile LPDDR4
Memory Size:
4Gbit
Memory Organization:
128M x 32
Memory Interface:
LVSTL_11
Clock Frequency:
2.133 GHz
Write Cycle Time - Word, Page:
18ns
Access Time:
3.5 ns
Voltage - Supply:
1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature:
-40°C ~ 105°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
200-WFBGA (10x14.5)

W66CP2NQUAHJ TR FAQ

1.How can I place an order for W66CP2NQUAHJ TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W66CP2NQUAHJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W66CP2NQUAHJ TR reliable?

The price and inventory of W66CP2NQUAHJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CP2NQUAHJ TR is usually 5 days.

3.What payment methods are accepted for W66CP2NQUAHJ TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CP2NQUAHJ TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W66CP2NQUAHJ TR?

W66CP2NQUAHJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W66CP2NQUAHJ TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W66CP2NQUAHJ TR?

For technical support, including W66CP2NQUAHJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CP2NQUAHJ TR requirements.

6.How does Aetrix verify that W66CP2NQUAHJ TR is sourced from the original manufacturer or authorized distributors?

All W66CP2NQUAHJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CP2NQUAHJ TR meets industry standards.

7.What is the process for return or replacement of W66CP2NQUAHJ TR?

All W66CP2NQUAHJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66CP2NQUAHJ TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W66CP2NQUAHJ TR part is unused and in its original packaging.

Return procedure for W66CP2NQUAHJ TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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