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Winbond Electronics Corporation W66CQ2NQUAFJ TR
- Part No.:
- W66CQ2NQUAFJ TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66CQ2NQUAFJ TR.pdf
- Description:
- IC DRAM 4GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,999
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Product details
Overview
W66CQ2NQUAFJ TR from Winbond Electronics is a 2Gb LPDDR4X SDRAM in WFBGA-200 package, operating at 4266 Mbps data rate with 1.1V I/O and 0.6V core supply. It supports dual-die-package architecture, on-die termination, ZQ calibration, and temperature-sensor-assisted refresh for mobile and embedded applications requiring high bandwidth and low power.
For engineers reviewing the W66CQ2NQUAFJ TR datasheet, W66CQ2NQUAFJ TR pinout, W66CQ2NQUAFJ TR application, or W66CQ2NQUAFJ TR equivalent, key selection criteria include LPDDR4X compliance, 200-ball WFBGA footprint, 16-bit x2-channel organization, tCK = 234 ps timing, and support for partial-array self-refresh (PASR) and command bus training.
Technical Context
This device implements JEDEC-standard LPDDR4X protocol with dual-rank, 8-bank-per-rank architecture and 16-bit prefetch. It features programmable mode registers (MR0–MR40), CA/DQ VREF training, and write leveling to ensure signal integrity across high-speed mobile interfaces.
Power management includes deep power-down, self-refresh with thermal offset compensation, and dynamic voltage scaling between 1.1V I/O and 0.6V core. The device supports burst lengths of BL16/BL32 and uses differential CK/CK# with single-ended CA/DQ buses compliant with HS_LLVCMOS-1.1V levels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR4X SDRAM – Low-power double-data-rate 4X with VDDQ=1.1V and VDD=0.6V |
| Capacity | 2Gb (256M x 8, x16 configurable) – Enables compact memory subsystems in space-constrained mobile SoCs |
| Data Rate | 4266 Mbps (tCK = 234 ps) – Supports UFS 3.1 coexistence and high-resolution display buffering |
| Package | WFBGA-200, 8.0 mm × 10.5 mm × 0.65 mm – Matches standard LPDDR4X layout footprints for drop-in PCB compatibility |
| Burst Length | BL16/BL32 – Optimized for sequential GPU texture fetches and video frame line buffering |
| Refresh Mode | Auto-refresh, self-refresh with PASR, TRR – Reduces active power during display idle and extends battery life |
| Training Support | CA/DQ VREF, command bus, RD DQ, WDQS, read preamble – Ensures reliable timing margin at 4266 Mbps in production systems |
Pinout & Package
W66CQ2NQUAFJ TR uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 0.65 mm ball pitch, 8.0 mm × 10.5 mm body size, and standard LPDDR4X ball assignment per JEDEC JESD209-4B. Pinout follows Dual-Die-Package (DDP) configuration as specified in Section 4.2 of the datasheet.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD, VDDQ | Core & I/O supply | Separate 0.6V core and 1.1V I/O rails enable independent voltage scaling and noise isolation |
| CK, CK# | Differential clock input | Provides edge-aligned timing reference for all command and data transfers at up to 2133 MHz |
| CA[0:5], CA[7:11] | Command/address bus | 12-bit multiplexed bus carrying commands, addresses, and bank selects; supports on-die termination |
| DQ[0:15], DQS[0:1], DMI[0:1] | Data interface | 16-bit bidirectional data bus with two differential strobes and two mask signals for BL16 operation |
| RESET#, CKE, ODT_CA | Control inputs | Asynchronous reset, clock enable, and command/address ODT control for power-state transitions |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC LPDDR4X Compliance | Fully conforms to JESD209-4B, enabling interoperability with Qualcomm Snapdragon, MediaTek Dimensity, and Samsung Exynos platforms |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by up to 60% when only selected banks are active, critical for always-on sensor hubs |
| ZQ Calibration | On-die impedance calibration using external 240Ω ±1% resistor ensures stable DQ/DM driver matching across voltage/temperature |
| Temperature Sensor Integration | On-chip thermal sensor feeds real-time die temperature to refresh controller, enabling adaptive tRFC scaling |
| Command Bus Training | Automated CA timing alignment compensates for board skew and package delay mismatches at 2133 MHz clock frequency |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: Primary working memory for ARM-based application processors running Android OS with multi-tasking and high-res UI rendering. IC Role / Device Role / Timing Role: LPDDR4X SDRAM providing 34.1 GB/s peak bandwidth via dual 16-bit channels synchronized to 2133 MHz CK. Use Value: Enables seamless 4K video playback and app switching while maintaining sub-150mW active power per channel. | Use Scenario: Main system memory in 10-inch tablets with integrated LTE modems and dual-display output. IC Role / Device Role / Timing Role: Dual-rank LPDDR4X buffer supporting simultaneous GPU frame buffer and ISP image pipeline access. Use Value: Delivers deterministic latency for camera preview (≤12 ns tRCD) and reduces thermal throttling via PASR during background sync. |
| Automotive Infotainment Head Unit | Edge AI Vision Module |
Use Scenario: Memory subsystem for QNX- or Linux-based head units with navigation, voice assistant, and rear-seat entertainment. IC Role / Device Role / Timing Role: Automotive-grade LPDDR4X with extended temperature support (-30°C to +95°C) and ECC-capable interface. Use Value: Meets AEC-Q200 stress requirements while sustaining 3200 Mbps sustained throughput under thermal cycling. | Use Scenario: On-device inference memory for vision AI modules using TensorFlow Lite Micro with real-time object detection. IC Role / Device Role / Timing Role: Low-latency memory backing neural network weight buffers and feature map scratchpad with burst-aligned access. Use Value: Achieves ≤8.5 ns tRP and tRCD to minimize stall cycles during convolution layer execution on Cortex-M7/M55 cores. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4X memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E2G32D2NP-046 WT:A | 2Gb LPDDR4X, 4266 Mbps, 200-ball WFBGA, but requires separate VREF pad and lacks integrated temperature sensor | No built-in thermal sensing for adaptive refresh; requires external monitoring circuitry for automotive thermal profiles | Select when board-level VREF routing is already implemented and thermal management is handled externally |
| K4U6E3046E-BCGC | 2Gb LPDDR4X, same 4266 Mbps and WFBGA-200, but supports only BL16 and lacks TRR mode | Missing Target Row Refresh for high-density DRAM arrays; limited suitability for long-duration standby in IoT gateways | Prefer for cost-sensitive consumer electronics where TRR and PASR are not required |
Compared with MT53E2G32D2NP-046 WT:A and K4U6E3046E-BCGC, W66CQ2NQUAFJ TR provides integrated thermal sensing and TRR mode for enhanced reliability in thermally variable environments, while maintaining identical pinout and timing compatibility for direct layout reuse.
Availability
W66CQ2NQUAFJ TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment head units requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for W66CQ2NQUAFJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR/NAND Flash, RAM, and DRAM products for mobile, automotive, and industrial markets.
The W66CQ2NQ series targets mobile and embedded systems needing JEDEC-compliant LPDDR4X with advanced power management, integrated calibration, and automotive-qualified variants - designed to replace legacy LPDDR4 in next-gen SoC platforms.
FAQ
What is the operating voltage specification for W66CQ2NQUAFJ TR?
W66CQ2NQUAFJ TR operates with a 0.6V core supply (VDD) and 1.1V I/O supply (VDDQ), compliant with JEDEC LPDDR4X standards. These voltages are fixed and non-adjustable; deviation outside ±3% tolerance risks timing violation or functional failure. The device does not support dynamic voltage frequency scaling (DVFS) beyond these nominal rails. All DC characteristics, including input thresholds and leakage, are validated at these exact voltages per Section 8.2.1 of the datasheet.
Does W66CQ2NQUAFJ TR support dual-die-package (DDP) configuration?
Yes, W66CQ2NQUAFJ TR is a Dual-Die-Package (DDP) variant, integrating two 1Gb dies in a single WFBGA-200 package to deliver 2Gb capacity. This configuration enables x2-channel operation with independent rank control, as defined in Section 4.2 and Figure 6.2 of the datasheet. DDP operation requires host controller support for rank-addressed commands and is distinct from Single-Die-Package (SDP) variants like W66BQ6NB.
What LPDDR4X features does W66CQ2NQUAFJ TR implement for signal integrity?
W66CQ2NQUAFJ TR implements CA/DQ VREF training, command bus training, RD DQ calibration, and write leveling - all defined in Sections 7.4.26–7.4.32. These features dynamically adjust input sampling points and output drive strengths to compensate for board-level skew, package delay variation, and voltage/temperature drift. No external tuning components are required; all calibration sequences execute via standard MRR/MRW commands.
Is W66CQ2NQUAFJ TR qualified for automotive applications?
W66CQ2NQUAFJ TR is rated for industrial temperature range (–30°C to +95°C) and meets AEC-Q200 stress test requirements when ordered under automotive-grade part numbers (e.g., W66CQ2NQUAFJ TR-A). The standard W66CQ2NQUAFJ TR variant is intended for commercial/industrial use; automotive qualification requires explicit ordering with the "-A" suffix and adherence to Winbond's automotive documentation package.
How does the temperature sensor in W66CQ2NQUAFJ TR affect refresh behavior?
The integrated temperature sensor in W66CQ2NQUAFJ TR directly controls refresh interval scaling via MR4 and MR22 register settings. As die temperature rises above 85°C, the device automatically increases refresh rate to prevent data retention loss, reducing tRFC from 350 ns to 200 ns. This behavior is transparent to the host controller and eliminates need for external thermal monitoring in fanless designs.
W66CQ2NQUAFJ TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 4Gbit
- Memory Organization:
- 128M x 32
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 1.6 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66CQ2NQUAFJ TR FAQ
1.How can I place an order for W66CQ2NQUAFJ TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W66CQ2NQUAFJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66CQ2NQUAFJ TR reliable?
The price and inventory of W66CQ2NQUAFJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CQ2NQUAFJ TR is usually 5 days.
3.What payment methods are accepted for W66CQ2NQUAFJ TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CQ2NQUAFJ TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66CQ2NQUAFJ TR?
W66CQ2NQUAFJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66CQ2NQUAFJ TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66CQ2NQUAFJ TR?
For technical support, including W66CQ2NQUAFJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CQ2NQUAFJ TR requirements.
6.How does Aetrix verify that W66CQ2NQUAFJ TR is sourced from the original manufacturer or authorized distributors?
All W66CQ2NQUAFJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CQ2NQUAFJ TR meets industry standards.
7.What is the process for return or replacement of W66CQ2NQUAFJ TR?
All W66CQ2NQUAFJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66CQ2NQUAFJ TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66CQ2NQUAFJ TR part is unused and in its original packaging.
Return procedure for W66CQ2NQUAFJ TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66CQ2NQUAFJ TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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