My Inquiry
My Account
Winbond Electronics Corporation W66CQ2NQUAGJ
- Part No.:
- W66CQ2NQUAGJ
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66CQ2NQUAGJ.pdf
- Description:
- IC DRAM 4GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,084
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W66CQ2NQUAGJ from Winbond Electronics is a 2Gb LPDDR4X SDRAM in 200-ball WFBGA package, operating at 4266 Mbps data rate with 1.1V I/O and 0.6V core supply. It supports dual-die-package (DDP) architecture, on-die termination (ODT), ZQ calibration, and temperature-sensor-assisted refresh for mobile SoC memory subsystems in smartphones and tablets.
For engineers reviewing the W66CQ2NQUAGJ datasheet, W66CQ2NQUAGJ pinout, W66CQ2NQUAGJ application, or W66CQ2NQUAGJ equivalent, key selection criteria include LPDDR4X timing compliance (tRCD/tRP = 18ns), CA/DQ VREF training capability, MR39–MR40 thermal offset register support, and DDP-compatible ball assignment for high-density memory stacking.
Technical Context
This device implements a full LPDDR4X-compliant interface with differential CK/CK#, single-ended CA bus, and 16-bit DQ/DQS/DM groups. It supports all mandatory LPDDR4X features including write leveling, read DQ calibration, command bus training, and multi-purpose command (MPC) execution for runtime configuration.
The W66CQ2NQUAGJ operates in dual-die-package (DDP) configuration with shared ball mapping across both dies, enabling 4Gb density via two stacked 2Gb dies. It integrates on-die temperature sensing, PASR (Partial Array Self-Refresh), and TRR (Target Row Refresh) to reduce active power in thermally constrained mobile platforms.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2Gb (256Mb × 16-bit) in single-die-package (SDP) configuration per die; W66CQ2NQUAGJ is SDP variant. |
| Data Rate | 4266 Mbps (2133 MHz clock, double-data-rate), meeting JEDEC JESD209-4B LPDDR4X specification. |
| Supply Voltages | VDD/VDDQ = 1.1V ±3%; VDD2 = 0.6V ±3% - enables low-power operation with separate I/O and core rails. |
| Timing (tRCD/tRP) | 18 ns at 2133 MHz - defines minimum row-to-column and row-precharge delays for reliable burst access. |
| Operating Temperature | –25°C to +85°C case temperature - qualified for commercial mobile applications with thermal-aware refresh. |
| Package | 200-ball WFBGA, 10 mm × 12 mm × 0.65 mm, 0.65 mm ball pitch - compatible with fine-pitch mobile PCB assembly. |
| Interface Standard | JEDEC LPDDR4X compliant - supports Vref training, WDQS control modes, masked write, and DBI. |
Pinout & Package
W66CQ2NQUAGJ uses a 200-ball WFBGA package with 0.65 mm pitch, 10 mm × 12 mm body size, and standard LPDDR4X ball assignment per Section 4.1 of the datasheet (Single-Die-Package layout). Ball mapping follows JEDEC-defined CA/DQ/CK/ODT/RESET_n signal grouping.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential Clock Input | LVDS-level reference for all timing-critical operations; requires matched trace length and controlled impedance. |
| CA[0:9] | Command/Address Bus | 10-bit single-ended bus carrying mode register writes, activate/precharge commands, and bank address. |
| DQ[0:15] | Data I/O Bus | 16-bit bidirectional data path with per-byte DQS strobes; supports BL16 bursts and masked write. |
| DQS_t / DQS_c [0:1] | Differential Data Strobe | Two differential strobes (DQS0/DQS1) for DQ[0:7] and DQ[8:15]; used for read/write capture and leveling. |
| RESET_n | Asynchronous Reset | Active-low hardware reset that initializes internal state machines and clears pending commands. |
| ODT_CA / ODT_DQ | On-Die Termination Control | Separate enable inputs for CA bus and DQ/DQS bus termination; reduces stub reflections without external resistors. |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4X Compliance | Fully conforms to JEDEC JESD209-4B, including VREF training, WDQS control, and DBI for signal integrity at 4266 Mbps. |
| ZQ Calibration | Supports dynamic output driver impedance tuning using external 240Ω ±1% resistor to maintain consistent drive strength over voltage/temperature. |
| Thermal Offset Registers (MR39/MR40) | Enables software-adjusted refresh rate scaling based on on-die temperature sensor output - reduces power in cooler conditions. |
| Command Bus Training | Performs CA timing alignment during initialization to compensate for flight-time skew across long CA traces in mobile SoC designs. |
| Partial Array Self-Refresh (PASR) | Allows selective refresh of only active memory banks, cutting self-refresh current by up to 50% when partial arrays are idle. |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: Primary system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) requiring high bandwidth and low standby power. IC Role / Device Role / Timing Role: LPDDR4X-compliant DRAM serving as main memory with 4266 Mbps interface, supporting burst reads/writes and auto-precharge. Use Value: Enables 2133 MHz clock operation with tRCD/tRP = 18 ns, reducing memory latency while maintaining <1.2V I/O voltage for battery efficiency. |
Use Scenario: Dual-channel memory subsystem in 10-inch Android tablets where board space limits use of discrete DIMMs. IC Role / Device Role / Timing Role: Single-die 2Gb LPDDR4X component deployed in x16 configuration to deliver 34.1 GB/s peak bandwidth per channel. Use Value: 200-ball WFBGA footprint allows tight placement near SoC BGA pads, minimizing trace length and signal integrity loss at 4266 Mbps. |
| Automotive Infotainment RAM | Edge AI Accelerator Buffer |
Use Scenario: Memory for QNX- or Android Automotive-based head units needing AEC-Q200-aligned reliability and thermal management. IC Role / Device Role / Timing Role: System memory with PASR and TRR support to sustain operation across –25°C to +85°C ambient while minimizing refresh overhead. Use Value: On-die temperature sensor and MR39/MR40 registers allow dynamic refresh adjustment - critical for fanless infotainment enclosures. |
Use Scenario: Frame buffer and intermediate tensor storage for edge AI SoCs (e.g., NPU co-processors) performing real-time image inference. IC Role / Device Role / Timing Role: Low-latency, high-throughput memory supporting burst transfers for convolution layer weights and activation maps. Use Value: Write leveling and RD DQ calibration ensure timing margin at 4266 Mbps - essential for deterministic inference pipeline timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4X memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M16D2DS-046 | 2Gb LPDDR4X, 4266 Mbps, 200-ball WFBGA, but uses Micron's proprietary CA training flow and lacks MR39/MR40 thermal offset registers. | Requires different initialization sequence; no native thermal-aware refresh scaling - less suitable for uncooled edge devices. | Select when existing design already uses Micron LPDDR4X firmware stack and thermal margins are wide. |
| K4U6E3046E-BCGC | 2Gb LPDDR4X, 4266 Mbps, 200-ball WFBGA, Samsung part with identical ball map but different MR register layout (MR22–MR25 instead of MR39/MR40). | Same physical integration, but thermal offset must be implemented via external sensor + host SW - adds BOM cost and complexity. | Select when sourcing from Samsung distribution channels or when legacy platform firmware already supports Samsung MR definitions. |
Compared with MT53E256M16D2DS-046 and K4U6E3046E-BCGC, W66CQ2NQUAGJ provides native MR39/MR40 thermal offset control and Winbond's documented CA/DQ training sequence - simplifying firmware bring-up for thermally adaptive mobile designs without external sensors.
Availability
W66CQ2NQUAGJ is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, automotive infotainment RAM, and edge AI accelerator buffer applications requiring stable component supply and JEDEC-compliant LPDDR4X performance.
Supply support for W66CQ2NQUAGJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, SLIM NAND, and low-power DRAM for mobile and embedded markets.
W66CQ2NQUAGJ belongs to Winbond's W66CQ2NQ LPDDR4X product line, designed specifically for battery-powered mobile SoCs requiring JEDEC-compliant 4266 Mbps operation, thermal-aware refresh, and compact WFBGA packaging.
FAQ
What is the package type and ball count for W66CQ2NQUAGJ?
W66CQ2NQUAGJ uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package measuring 10 mm × 12 mm × 0.65 mm with 0.65 mm ball pitch. This matches JEDEC MO-270DA standard and is optimized for high-density mobile PCB layouts. The ball assignment follows Single-Die-Package (SDP) layout defined in Section 4.1 of the official Winbond datasheet for W66CQ2NQ series.
Does W66CQ2NQUAGJ support LPDDR4X-specific training features like CA and DQ VREF calibration?
Yes, W66CQ2NQUAGJ fully supports LPDDR4X training sequences including CA VREF training (Section 7.4.26), DQ VREF training (Section 7.4.27), command bus training (Section 7.4.28), and write leveling (Section 7.4.30). These are mandatory for stable 4266 Mbps operation and are implemented per JEDEC JESD209-4B. The W66CQ2NQUAGJ datasheet provides detailed AC timing tables and training flow diagrams for each procedure.
What is the maximum data rate and corresponding clock frequency for W66CQ2NQUAGJ?
W66CQ2NQUAGJ supports a maximum data rate of 4266 Mbps, achieved with a 2133 MHz differential clock (CK_t/CK_c). This meets JEDEC LPDDR4X speed bin "4266" and requires tRCD/tRP = 18 ns minimum timing. The device operates across full voltage and temperature range at this rate when configured per recommended DC conditions (VDDQ = 1.1V ±3%, TC = –25°C to +85°C).
How does W66CQ2NQUAGJ handle thermal management during self-refresh?
W66CQ2NQUAGJ integrates an on-die temperature sensor and supports thermal offset adjustment via Mode Registers MR39 and MR40. These registers allow host firmware to scale refresh intervals dynamically - reducing self-refresh current in cooler conditions. This feature is documented in Sections 7.4.37 and 7.3.32–7.3.33 of the W66CQ2NQ datasheet and is unique to Winbond's implementation among 2Gb LPDDR4X offerings.
Is W66CQ2NQUAGJ pin-compatible with other Winbond LPDDR4X parts like W66BQ6NB?
No, W66CQ2NQUAGJ is not pin-compatible with W66BQ6NB. While both share the same 200-ball WFBGA footprint, W66BQ6NB is a 4Gb Dual-Die-Package (DDP) device with interleaved ball mapping for dual-die operation, whereas W66CQ2NQUAGJ is a 2Gb Single-Die-Package (SDP) part with dedicated SDP ball assignment (Section 4.1). Their CA/DQ/CK routing and initialization sequences differ significantly.
W66CQ2NQUAGJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 4Gbit
- Memory Organization:
- 128M x 32
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 1.866 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66CQ2NQUAGJ FAQ
1.How can I place an order for W66CQ2NQUAGJ through Aetrix?
Please submit a Request for Quotation (RFQ) for W66CQ2NQUAGJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66CQ2NQUAGJ reliable?
The price and inventory of W66CQ2NQUAGJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CQ2NQUAGJ is usually 5 days.
3.What payment methods are accepted for W66CQ2NQUAGJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CQ2NQUAGJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66CQ2NQUAGJ?
W66CQ2NQUAGJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66CQ2NQUAGJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66CQ2NQUAGJ?
For technical support, including W66CQ2NQUAGJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CQ2NQUAGJ requirements.
6.How does Aetrix verify that W66CQ2NQUAGJ is sourced from the original manufacturer or authorized distributors?
All W66CQ2NQUAGJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CQ2NQUAGJ meets industry standards.
7.What is the process for return or replacement of W66CQ2NQUAGJ?
All W66CQ2NQUAGJ units undergo pre-shipment inspection (PSI). If there is an issue with W66CQ2NQUAGJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66CQ2NQUAGJ part is unused and in its original packaging.
Return procedure for W66CQ2NQUAGJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66CQ2NQUAGJ Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
