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Winbond Electronics Corporation W66CQ2NQUAGJ TR
- Part No.:
- W66CQ2NQUAGJ TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66CQ2NQUAGJ TR.pdf
- Description:
- IC DRAM 4GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,400
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Product details
Overview
W66CQ2NQUAGJ TR from Winbond is a 2Gb LPDDR4X mobile SDRAM in 200-ball WFBGA package, operating at 4266 Mbps data rate with 1.1 V I/O and 0.6 V core supply, supporting dual-channel 16-bit x2 configuration for smartphone application processors and AI edge SoCs.
For engineers reviewing the W66CQ2NQUAGJ TR datasheet, W66CQ2NQUAGJ TR pinout, W66CQ2NQUAGJ TR application, or W66CQ2NQUAGJ TR equivalent, key selection criteria include LPDDR4X JEDEC JESD209-4B compliance, tCK = 234 ps timing, on-die termination (ODT) for DQ/DQS/CA buses, and support for write leveling, read DQ calibration, and thermal offset compensation.
Technical Context
The W66CQ2NQUAGJ TR implements a dual-die-package (DDP) architecture within a single 200-ball WFBGA, delivering 2Gb density via two stacked 1Gb dies. It supports 8 banks per die, 16-bit prefetch, and full LPDDR4X command protocol including MRW/MRR, MPC, and TRR mode.
It features CA and DQ VREF training, ZQ calibration with external 240 Ω resistor, and programmable thermal offset correction across -25°C to +85°C operation. The device uses differential CK/CK# inputs and supports both synchronous and asynchronous ODT control with configurable termination values.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 2Gb (268,435,456 bits), organized as 16M × 16 × 8 banks × 2 dies |
| Data Rate | 4266 Mbps (tCK = 234 ps), compliant with LPDDR4X JESD209-4B |
| Supply Voltages | VDD/VDDQ = 1.1 V ± 3%; VDD2 = 0.6 V ± 3% - enables low-power mobile operation |
| Package | 200-ball WFBGA, 10 mm × 12 mm × 0.65 mm, 0.65 mm ball pitch |
| Operating Temp | -25°C to +85°C case temperature - qualified for consumer and industrial mobile applications |
| Interface | 16-bit bidirectional DQ bus, differential CK/CK#, CA bus with on-die termination |
| Timing Features | tRCD/tRP = 24 ns min, tRAS = 42 ns min, tFAW = 40 ns - defines minimum row activation and refresh constraints |
Pinout & Package
W66CQ2NQUAGJ TR is housed in a 200-ball WFBGA (Wafer-Level Fine-Pitch Ball Grid Array) package measuring 10 mm × 12 mm × 0.65 mm with 0.65 mm ball pitch. Ball assignment follows JEDEC-standard LPDDR4X layout for dual-die-package (DDP) configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Reference timing for all command, address, and data transfers; requires matched trace length and controlled impedance |
| CA[0:9] | Command/address bus | 10-bit multiplexed bus for commands (ACT, PRE, REF), mode register writes, and bank/row/column addressing |
| DQ[0:15] | Data I/O bus | 16-bit bidirectional data path with per-bit DQS strobes; supports BL16 burst reads/writes |
| DQS / DQS# | Data strobe pair | Differential source-synchronous strobe for DQ capture; used in read/write leveling and timing calibration |
| RESET_n | Asynchronous reset | Active-low hardware reset that forces device into power-up initialization state; must be held stable during power ramp |
| ODT_CA / ODT_DQ | On-die termination control | Dynamic ODT enable signals for command/address and data buses; configured via mode registers MR11/MR12 |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4X JEDEC Compliance | Fully compliant with JESD209-4B, enabling interoperability with application processors from Qualcomm, MediaTek, and Samsung |
| Write Leveling Support | Hardware-assisted write leveling via MRW/MRR and MPC commands - corrects DQS-to-CK skew across PVT corners |
| Thermal Offset Compensation | Programmable thermal offset register (MR39) adjusts timing parameters based on on-die temperature sensor output |
| ZQ Calibration | Supports ZQCAL using external 240 Ω ±1% resistor - calibrates pull-up/pull-down driver strength for signal integrity |
| Target Row Refresh (TRR) | Hardware TRR mode (MR22) mitigates row hammer effects in high-density mobile memory systems |
Applications
| Smartphone Application Processor Memory | AI Edge SoC Main Memory |
|---|---|
Use Scenario: High-bandwidth memory subsystem for flagship Android smartphones using Snapdragon 8 Gen 2 or Dimensity 9200 SoCs. IC Role / Device Role / Timing Role: Primary LPDDR4X DRAM providing 34.1 GB/s peak bandwidth to CPU/GPU/NPU clusters. Use Value: Enables concurrent 4K video decode, real-time AI inference, and multitasking with sub-20 ns tRCD latency and dynamic ODT tuning. | Use Scenario: On-device AI accelerator memory in compact edge devices such as smart cameras and industrial vision sensors. IC Role / Device Role / Timing Role: Low-voltage, thermally adaptive main memory interfacing with heterogeneous AI SoCs requiring sustained burst throughput. Use Value: Delivers 4266 Mbps data rate at 1.1 V with thermal offset compensation, maintaining timing margin across ambient shifts from -25°C to +85°C. |
| Automotive Infotainment System | 5G Mobile Hotspot Baseband Memory |
Use Scenario: Memory subsystem in AEC-Q200 qualified infotainment head units running Android Automotive OS. IC Role / Device Role / Timing Role: Dual-channel LPDDR4X memory supporting GPU-accelerated UI rendering and ADAS data buffering. Use Value: Meets automotive temperature range (-25°C to +85°C) with PASR (Partial Array Self-Refresh) to reduce active power during display idle states. | Use Scenario: Baseband memory in portable 5G CPE devices requiring high-speed, low-latency access for modem and protocol stack processing. IC Role / Device Role / Timing Role: LPDDR4X interface to 5G baseband processor handling L1/L2 protocol layers and beamforming calculations. Use Value: Supports write leveling and RD DQ calibration to maintain signal integrity over extended PCB trace lengths in compact hotspot enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4X memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M16D2DS-046 | 2Gb LPDDR4X, 4266 Mbps, 200-ball WFBGA, but uses 1.05 V VDDQ and different MR register mapping | Optimized for Micron-based reference designs; lacks TRR mode and thermal offset register (MR39) | Preferred when designing with Micron ecosystem tools and validation flows |
| K4U6E3046M-BGCF | 2Gb LPDDR4X, 4266 Mbps, 200-ball WFBGA, supports same JEDEC timing but uses different ZQ resistor value (200 Ω) | Designed for Samsung Exynos platforms; includes proprietary low-power modes not in JEDEC spec | Best suited for Exynos 2200/2400 integration where vendor-specific power sequencing is implemented |
Compared with MT53E256M16D2DS-046 and K4U6E3046M-BGCF, the W66CQ2NQUAGJ TR provides unique thermal offset compensation (MR39) and JEDEC-compliant TRR mode - critical for long-term reliability in thermally constrained edge AI and automotive infotainment deployments.
Availability
W66CQ2NQUAGJ TR is available at Aetrix Electronics and suitable for smartphone application processors, AI edge SoCs, automotive infotainment systems, and 5G mobile hotspots requiring stable component supply and long-lifecycle support.
Supply support for W66CQ2NQUAGJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and mobile DRAM products for consumer, industrial, and automotive markets.
The W66CQ2NQ series targets high-performance, low-power mobile memory applications, designed specifically to meet JEDEC LPDDR4X requirements while integrating advanced calibration and thermal adaptation features for next-generation SoCs.
FAQ
What is the exact density and organization of the W66CQ2NQUAGJ TR?
The W66CQ2NQUAGJ TR is a 2Gb LPDDR4X SDRAM organized as 16M words × 16 bits × 8 banks × 2 dies (dual-die-package). Each die contains 1Gb, and the device presents a unified 16-bit x2 channel interface. Total capacity is 268,435,456 bits, with standard LPDDR4X burst length BL16 and 8-bank architecture supporting concurrent row activations.
Does the W66CQ2NQUAGJ TR support JEDEC LPDDR4X JESD209-4B compliance?
Yes, the W66CQ2NQUAGJ TR fully complies with JEDEC standard JESD209-4B for LPDDR4X. This includes mandatory features such as VDDQ = 1.1 V operation, 4266 Mbps data rate (tCK = 234 ps), differential CK/CK#, CA bus ODT, write leveling, read DQ calibration, and TRR mode. All timing parameters and command protocols align with the specification's AC and DC requirements.
What package type and dimensions does the W66CQ2NQUAGJ TR use?
The W66CQ2NQUAGJ TR uses a 200-ball WFBGA package measuring 10 mm × 12 mm × 0.65 mm with 0.65 mm ball pitch. It follows JEDEC MO-270AC standard for LPDDR4X dual-die-package layout. The package supports both single-rank and dual-rank configurations and is qualified for reflow soldering per J-STD-020 moisture sensitivity level MSL3.
How does thermal offset compensation work in the W66CQ2NQUAGJ TR?
The W66CQ2NQUAGJ TR includes an on-die temperature sensor and dedicated MR39 register for thermal offset compensation. When enabled, the device automatically adjusts internal timing parameters (e.g., tRCD, tRP) based on measured junction temperature. This maintains timing margin across the full -25°C to +85°C operating range without requiring host-side recalibration or firmware intervention.
What are the key calibration features supported by the W66CQ2NQUAGJ TR?
The W66CQ2NQUAGJ TR supports five critical calibration features: (1) CA VREF training for command/address bus signal integrity, (2) DQ VREF training for data bus threshold alignment, (3) write leveling for DQS-to-CK skew correction, (4) RD DQ calibration for read data capture window optimization, and (5) ZQ calibration using an external 240 Ω resistor to tune pull-up/pull-down driver strength.
W66CQ2NQUAGJ TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 4Gbit
- Memory Organization:
- 128M x 32
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 1.866 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66CQ2NQUAGJ TR FAQ
1.How can I place an order for W66CQ2NQUAGJ TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W66CQ2NQUAGJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66CQ2NQUAGJ TR reliable?
The price and inventory of W66CQ2NQUAGJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CQ2NQUAGJ TR is usually 5 days.
3.What payment methods are accepted for W66CQ2NQUAGJ TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CQ2NQUAGJ TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66CQ2NQUAGJ TR?
W66CQ2NQUAGJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66CQ2NQUAGJ TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66CQ2NQUAGJ TR?
For technical support, including W66CQ2NQUAGJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CQ2NQUAGJ TR requirements.
6.How does Aetrix verify that W66CQ2NQUAGJ TR is sourced from the original manufacturer or authorized distributors?
All W66CQ2NQUAGJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CQ2NQUAGJ TR meets industry standards.
7.What is the process for return or replacement of W66CQ2NQUAGJ TR?
All W66CQ2NQUAGJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66CQ2NQUAGJ TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66CQ2NQUAGJ TR part is unused and in its original packaging.
Return procedure for W66CQ2NQUAGJ TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66CQ2NQUAGJ TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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