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Winbond Electronics Corporation W66CQ2NQUAHJ
- Part No.:
- W66CQ2NQUAHJ
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66CQ2NQUAHJ.pdf
- Description:
- IC DRAM 4GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,755
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Product details
Overview
W66CQ2NQUAHJ from Winbond is a 2Gb LPDDR4X SDRAM in 200-ball WFBGA package, operating at 4266 Mbps data rate with 1.1 V I/O and 0.6 V core supply. It supports dual-die-package architecture, on-die termination, ZQ calibration, and temperature-sensor-assisted refresh for mobile and embedded applications requiring high bandwidth and low power.
For engineers reviewing the W66CQ2NQUAHJ datasheet, W66CQ2NQUAHJ pinout, W66CQ2NQUAHJ application, or W66CQ2NQUAHJ equivalent, key selection criteria include LPDDR4X compliance, 200-ball WFBGA mechanical compatibility, tRCD/tRP timing at 15 ns (at 2133 MHz), VREF training support, and PASR-enabled self-refresh for battery-constrained designs.
Technical Context
This device implements LPDDR4X JEDEC JESD209-4B-compliant signaling with differential CK/CK#, single-ended CA bus, and 16-bit DQ/DQS/DM interface. It supports 8 banks, 16n prefetch, and programmable burst lengths (BL16/BL32) with read/write leveling, DQ/DQS training, and command bus training for signal integrity at high speed.
Power management includes deep power-down, partial-array self-refresh (PASR), thermal offset compensation, and dynamic voltage scaling between 1.1 V (I/O) and 0.6 V (core). Mode registers MR0–MR40 configure timing, ODT, VREF, refresh, and training behavior per JEDEC specification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR4X SDRAM - enables 4266 Mbps data rate with reduced I/O voltage vs. LPDDR4 |
| Capacity | 2Gb (256Mb × 8) - supports 8-bit wide data interface in single-die configuration |
| Data Rate | 4266 Mbps (2133 MHz clock) - delivers 34.1 GB/s peak bandwidth across 16-bit bus |
| Supply Voltages | VDD/VDDQ = 1.1 V ± 3%; VDD2 = 0.6 V ± 3% - enables ultra-low-power operation in portable systems |
| Package | 200-ball WFBGA, 10 mm × 12 mm × 0.65 mm - matches standard LPDDR4X footprint for PCB reuse |
| Timing (tRCD/tRP) | 15 ns minimum at 2133 MHz - defines shortest row activation and precharge delay for high-speed random access |
| Temperature Range | –25°C to +85°C (commercial) - validated for smartphone, tablet, and edge AI SoC integration |
Pinout & Package
W66CQ2NQUAHJ uses a 200-ball WFBGA package with 0.65 mm ball pitch, compliant with JEDEC MO-270CA. Ball assignment follows LPDDR4X standard layout for CA, DQ, DQS, DM, CK/CK#, and power/ground distribution.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential Clock Input | Edge-triggered reference for all command and data transfers; requires matched trace length and controlled impedance |
| CA[0:10] | Command/Address Bus | Multiplexed row/column/bank address and command signals; supports on-die termination (ODT_CA) |
| DQ[0:15] | Data I/O | 16-bit bidirectional data path with per-bit DQS strobes and DM masking for write operations |
| DQS / DQS# | Data Strobe Pair | Differential source-synchronous strobe for read/write capture; supports read/write leveling calibration |
| RESET_n | Asynchronous Reset | Active-low hardware reset that initializes mode registers and internal state without power cycle |
| VREF_CA / VREF_DQ | Reference Voltage Inputs | Provides mid-supply reference for CA and DQ receiver threshold tracking during voltage/temperature variation |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4X JEDEC Compliance | Fully conforms to JESD209-4B spec, enabling interoperability with host controllers like Qualcomm Snapdragon, MediaTek Dimensity, and Samsung Exynos |
| On-Die Termination (ODT) | Programmable ODT on CA and DQ buses eliminates external termination resistors and reduces board-level signal integrity complexity |
| ZQ Calibration | Internal 240 Ω reference resistor enables dynamic output driver impedance tuning to maintain signal fidelity across voltage/temperature |
| Partial Array Self-Refresh (PASR) | Allows selective refresh of active memory banks only, reducing self-refresh current by up to 50% in burst-access workloads |
| VREF Training | Automated CA and DQ VREF level optimization during initialization ensures robust receiver margin under PVT variation |
Applications
| Smartphone Application | Tablet Platform |
|---|---|
Use Scenario: Main system memory in flagship Android smartphones with multi-core CPU/GPU and AI accelerators. IC Role / Device Role / Timing Role: High-bandwidth, low-latency DRAM providing real-time frame buffering, app loading, and neural network inference scratchpad. Use Value: LPDDR4X 4266 Mbps data rate and 0.6 V core supply reduce SoC power consumption by ~20% versus LPDDR4 at same bandwidth. | Use Scenario: Primary memory in 10–12 inch tablets supporting 4K video playback, multitasking, and stylus input processing. IC Role / Device Role / Timing Role: Dual-rank-capable LPDDR4X interface delivering sustained 28+ GB/s read throughput for media decode engines and display controllers. Use Value: PASR and deep power-down modes extend battery life by minimizing idle current during screen-off and background sync intervals. |
| Edge AI Module | Automotive Infotainment |
Use Scenario: On-device AI inference module for real-time object detection and voice recognition in smart cameras and IoT gateways. IC Role / Device Role / Timing Role: Low-latency memory subsystem feeding tensor accelerator with quantized model weights and feature maps. Use Value: Read/write leveling and DQS-DQ training ensure timing closure at 2133 MHz clock on compact PCBs with minimal routing layers. | Use Scenario: Central infotainment head unit running Android Automotive OS with navigation, ADAS alerts, and rear-seat entertainment. IC Role / Device Role / Timing Role: Automotive-grade LPDDR4X memory supporting ASIL-B functional safety via ECC-capable controller interface and thermal monitoring. Use Value: Integrated temperature sensor and TRR (Target Row Refresh) enable adaptive refresh scheduling to prevent data retention loss in cabin temperature extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4X memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M16D2DS-046 | 2Gb LPDDR4X, 46.4 GB/s peak bandwidth, 1.05 V I/O, 200-ball BGA (Micron) | Supports higher 2320 MHz clock; tighter tFAW (20 ns); no integrated temperature sensor | Preferred when maximum bandwidth and JEDEC-certified reliability are prioritized over thermal-aware refresh |
| K4U6E3046E-BCGC | 2Gb LPDDR4X, 4266 Mbps, 1.1 V I/O, 200-ball WFBGA (Samsung) | Identical data rate and package; differs in MR register mapping and ZQ calibration sequence | Drop-in replacement only after validating host controller firmware compatibility with Samsung-specific mode register definitions |
Compared with MT53E256M16D2DS-046 and K4U6E3046E-BCGC, W66CQ2NQUAHJ offers unique thermal offset compensation and PASR granularity control-enabling finer-grained power optimization in thermally constrained edge devices where runtime temperature fluctuates rapidly.
Availability
W66CQ2NQUAHJ is available at Aetrix Electronics and suitable for smartphone platforms, tablet SoCs, edge AI modules, and automotive infotainment systems requiring stable component supply, long-term lifecycle support, and LPDDR4X-compliant memory sourcing.
Supply support for W66CQ2NQUAHJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM for consumer, industrial, and automotive markets.
W66CQ2NQUAHJ belongs to Winbond's W66CQ2NQ LPDDR4X product line, designed specifically for power-sensitive, high-performance mobile and embedded applications demanding JEDEC-compliant low-voltage memory with advanced power management features.
FAQ
What is the exact memory capacity and organization of W66CQ2NQUAHJ?
W66CQ2NQUAHJ is a 2 Gb (gigabit) LPDDR4X SDRAM organized as 256Mb × 8, meaning it provides an 8-bit data bus width with 256 million addressable words. This configuration supports single-rank operation in standard mobile memory layouts and is validated for use with host controllers requiring JEDEC JESD209-4B-compliant 2Gb density.
Does W66CQ2NQUAHJ support on-die termination (ODT) and how is it configured?
Yes, W66CQ2NQUAHJ supports programmable on-die termination for both the command/address (ODT_CA) and data (ODT_DQ) buses via mode registers MR1 and MR2. ODT states are dynamically controlled during reads/writes to match transmission line impedance, eliminating need for external resistors and improving signal integrity at 4266 Mbps data rates.
What package type and dimensions does W66CQ2NQUAHJ use?
W66CQ2NQUAHJ uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package measuring 10 mm × 12 mm × 0.65 mm with 0.65 mm ball pitch. This matches industry-standard LPDDR4X footprints and is compatible with automated SMT assembly processes used in high-volume mobile device manufacturing.
How does W66CQ2NQUAHJ handle thermal variations during operation?
W66CQ2NQUAHJ integrates an on-die temperature sensor and supports thermal offset compensation in mode register MR40. It also implements Target Row Refresh (TRR) and Partial Array Self-Refresh (PASR), allowing refresh rate and active bank count to scale dynamically with die temperature-ensuring data retention across –25°C to +85°C without external thermal management.
Is W66CQ2NQUAHJ pin-compatible with other Winbond LPDDR4X devices like W66BQ6NB?
No, W66CQ2NQUAHJ is not pin-compatible with W66BQ6NB. While both share the same 200-ball WFBGA package outline, W66BQ6NB is a 4Gb device with dual-die-package (DDP) ball assignment, whereas W66CQ2NQUAHJ is a 2Gb single-die-package (SDP) variant-requiring distinct PCB layout and mode register initialization sequences.
W66CQ2NQUAHJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 4Gbit
- Memory Organization:
- 128M x 32
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 2.133 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66CQ2NQUAHJ FAQ
1.How can I place an order for W66CQ2NQUAHJ through Aetrix?
Please submit a Request for Quotation (RFQ) for W66CQ2NQUAHJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66CQ2NQUAHJ reliable?
The price and inventory of W66CQ2NQUAHJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CQ2NQUAHJ is usually 5 days.
3.What payment methods are accepted for W66CQ2NQUAHJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CQ2NQUAHJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66CQ2NQUAHJ?
W66CQ2NQUAHJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66CQ2NQUAHJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66CQ2NQUAHJ?
For technical support, including W66CQ2NQUAHJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CQ2NQUAHJ requirements.
6.How does Aetrix verify that W66CQ2NQUAHJ is sourced from the original manufacturer or authorized distributors?
All W66CQ2NQUAHJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CQ2NQUAHJ meets industry standards.
7.What is the process for return or replacement of W66CQ2NQUAHJ?
All W66CQ2NQUAHJ units undergo pre-shipment inspection (PSI). If there is an issue with W66CQ2NQUAHJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66CQ2NQUAHJ part is unused and in its original packaging.
Return procedure for W66CQ2NQUAHJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66CQ2NQUAHJ Tags
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M24C02-WMN6TP
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