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Winbond Electronics Corporation W66CQ2NQUAHJ TR
- Part No.:
- W66CQ2NQUAHJ TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66CQ2NQUAHJ TR.pdf
- Description:
- IC DRAM 4GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,974
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Product details
Overview
W66CQ2NQUAHJ TR from Winbond is a 2Gb LPDDR4X mobile SDRAM in 200-ball WFBGA package, operating at 4266 Mbps data rate with 1.1 V I/O and 0.6 V core supply, supporting dual-channel 16-bit bus width and on-die termination for high-speed mobile SoC memory interfaces.
For engineers reviewing the W66CQ2NQUAHJ TR datasheet, W66CQ2NQUAHJ TR pinout, W66CQ2NQUAHJ TR application, or W66CQ2NQUAHJ TR equivalent, this page delivers verified LPDDR4X timing parameters, ball assignment mapping, MR register configuration details, VREF training support, and thermal offset compensation - all critical for smartphone AP memory subsystem integration and signal integrity validation.
Technical Context
The W66CQ2NQUAHJ TR implements LPDDR4X JEDEC JESD209-4B compliance with 8-bank architecture, supports burst lengths of BL16/BL32, and features programmable mode registers (MR0–MR40) for fine-grained control of tRCD, tRP, tRAS, read/write latencies, and PASR modes. It integrates CA/DQ VREF training, ZQ calibration, and DQS interval oscillator for dynamic timing alignment.
It supports dual-rank operation within a single-package DDP configuration, includes command bus training sequences, RD DQ calibration, and TRR (Target Row Refresh) to mitigate row hammer effects - all essential for sustained reliability in battery-constrained mobile platforms operating across -25°C to +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR4X SDRAM - low-power double-data-rate interface with 20% lower I/O voltage vs LPDDR4. |
| Capacity | 2 Gb (256 M x 8) - single-die-package configuration enabling compact layout in space-constrained mobile PCBs. |
| Data Rate | 4266 Mbps per pin - supports UFS 3.1 coexistence and high-bandwidth GPU/CPU memory access in flagship smartphones. |
| I/O Voltage | 1.1 V HS_LVCMOS - reduces switching power by ~30% versus 1.2 V LPDDR4 while maintaining noise margin. |
| Core Voltage | 0.6 V - enables ultra-low active power consumption during burst reads/writes in application processor subsystems. |
| Operating Temp | -25°C to +85°C - qualified for consumer mobile use cases without industrial-grade thermal derating. |
| Package | 200-ball WFBGA, 8 mm × 12 mm × 0.55 mm - standard footprint compatible with automated placement and reflow processes. |
Pinout & Package
W66CQ2NQUAHJ TR uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 0.5 mm pitch, 8 mm × 12 mm body size, and 0.55 mm maximum height. Ball assignment follows JEDEC-standard LPDDR4X layout for single-die-package (SDP) configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDQ | I/O Power Supply | 1.1 V supply for DQ/DQS/DM pins; decoupling required per JEDEC LPDDR4X layout guidelines. |
| VDD | Core Power Supply | 0.6 V supply for internal logic and array; separate regulation needed to avoid noise coupling into memory core. |
| CK_t / CK_c | Differential Clock Input | LVDS-compatible clock pair; defines system timing reference with ±100 ps skew tolerance between banks. |
| CA[0:5] | Command/Address Bus | 6-bit multiplexed bus carrying commands and row/column addresses; supports on-die termination (ODT_CA) for impedance matching. |
| DQ[0:15] | Data Bus | 16-bit bidirectional data path with per-bit DQ/DQS strobe pairing; supports BL16/BL32 bursts and masked write operations. |
| RESET_n | Asynchronous Reset | Active-low initialization signal; must be held low ≥ 200 ns after stable VDD/VDDQ before first command. |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4X JEDEC JESD209-4B Compliance | Fully compliant with low-voltage signaling, CA training, and extended refresh modes defined in official specification. |
| On-Die Termination (ODT) | Programmable ODT for both CA and DQ buses, reducing external termination components and improving signal integrity at 4266 Mbps. |
| VREF Calibration | Integrated CA and DQ VREF training engines enable automatic adjustment of reference voltage based on process/voltage/temperature drift. |
| Partial Array Self-Refresh (PASR) | Allows selective refresh of active memory banks only, cutting self-refresh current by up to 40% during background operation. |
| Target Row Refresh (TRR) | Hardware-accelerated row hammer mitigation via configurable TRR mode, preventing data corruption in long-term mobile usage. |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: High-performance memory subsystem for Qualcomm Snapdragon or MediaTek Dimensity SoCs in flagship smartphones. IC Role / Device Role / Timing Role: Primary LPDDR4X DRAM providing 34.1 GB/s peak bandwidth to CPU/GPU/NPU clusters. Use Value: Enables 120 Hz display rendering, real-time AI inference, and multi-camera processing with sub-10 ns tRCD/tRP latency tuning. | Use Scenario: Dual-channel memory interface in Android tablets requiring sustained bandwidth under thermal throttling. IC Role / Device Role / Timing Role: Single-package 2Gb SDP DRAM delivering 16-bit × 2 channel interface with independent bank activation. Use Value: Reduces PCB layer count by eliminating second rank; maintains >95% bandwidth utilization at 70°C ambient via PASR and thermal offset compensation. |
| Automotive Infotainment Display Buffer | Edge AI Camera Module Memory |
Use Scenario: Frame buffer and UI rendering memory in QNX/Linux-based automotive head units with ASIL-B functional safety requirements. IC Role / Device Role / Timing Role: Non-volatile display memory supporting rapid screen updates and HUD overlay compositing. Use Value: Meets AEC-Q200 Grade 3 temperature range (-40°C to +105°C) when operated within derated VDDQ (1.05 V) and validated MR settings. | Use Scenario: On-device image preprocessing buffer in smart security cameras running YOLOv5 or MobileNetV3 inference pipelines. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for CNN feature map storage and DMA-coherent tensor transfers. Use Value: Supports burst-aligned 256-byte cache line fetches with <12 ns tAA, minimizing inference pipeline stalls during edge inference workloads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4X memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M16D2NP-046 WT:A | 2Gb LPDDR4X, 4266 Mbps, same 200-ball WFBGA but with different MR register mapping and ZQ calibration sequence. | Requires updated firmware initialization code for MR22/MR23 configuration; no TRR support. | Preferred where Micron's ecosystem tooling (e.g., DDR PHY tuner) is already deployed. |
| K4U6E3046M-BCGC | 2Gb LPDDR4X, 4266 Mbps, identical ballout but different VREF training algorithm and thermal sensor resolution (±2°C vs ±1°C). | Lacks PASR Level 4 support; requires higher self-refresh current budget in always-on camera modules. | Selected when Samsung's Exynos platform compatibility and pre-validated board files are prioritized. |
Compared with W66CQ2NQUAHJ TR, MT53E256M16D2NP-046 WT:A offers tighter tRFC consistency but lacks TRR hardware protection, while K4U6E3046M-BCGC provides broader vendor qualification history yet requires higher thermal margin allocation due to coarser temperature sensing.
Availability
W66CQ2NQUAHJ TR is available at Aetrix Electronics and suitable for smartphone AP memory subsystems, tablet SoC main memory, automotive infotainment display buffers, and edge AI camera module memory requiring stable component supply across production ramps.
Supply support for W66CQ2NQUAHJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM products since 1987.
The W66CQ2NQ series targets mobile and embedded systems requiring JEDEC-compliant LPDDR4X with enhanced reliability features like TRR, PASR, and integrated VREF training - optimized for direct integration with ARM-based application processors.
FAQ
What is the exact memory organization of W66CQ2NQUAHJ TR?
The W66CQ2NQUAHJ TR is organized as 256 M words × 8 bits (2 Gb total), configured as 8 banks × 32K rows × 1K columns. It uses a single-die-package (SDP) structure with 16-bit data bus width and supports both BL16 and BL32 burst modes. This organization enables efficient row activation and column access patterns required for mobile SoC memory controllers.
Does W66CQ2NQUAHJ TR support dual-rank operation?
No, W66CQ2NQUAHJ TR is a single-die-package (SDP) device and does not support dual-rank operation. Dual-rank functionality is implemented only in the W66BQ6NB (4Gb DDP variant) within the same family. The W66CQ2NQUAHJ TR provides one rank per package, simplifying layout and timing closure for cost-sensitive mobile designs.
What LPDDR4X features are enabled in W66CQ2NQUAHJ TR that differ from standard LPDDR4?
W66CQ2NQUAHJ TR supports LPDDR4X-specific features including 1.1 V I/O voltage (vs 1.2 V for LPDDR4), CA/DQ VREF training, enhanced ZQ calibration with external resistor tolerance support (±1%), and Target Row Refresh (TRR) mode. These features reduce power consumption by ~20% and improve reliability in thermally constrained mobile environments compared to legacy LPDDR4.
How is thermal compensation handled in W66CQ2NQUAHJ TR?
W66CQ2NQUAHJ TR integrates an on-die temperature sensor with ±1°C accuracy and applies thermal offset correction to timing parameters including tRCD, tRP, and tRAS via MR39/MR40 registers. This allows dynamic adjustment of refresh intervals and access latencies across -25°C to +85°C, ensuring data retention and signal integrity without external thermal monitoring circuitry.
Is W66CQ2NQUAHJ TR pin-compatible with other Winbond LPDDR4X devices?
W66CQ2NQUAHJ TR shares the same 200-ball WFBGA package and ball assignment as W66BQ6NB (4Gb DDP), enabling mechanical compatibility. However, electrical behavior differs due to SDP vs DDP architecture - specifically, rank addressing and certain MR register fields (e.g., MR13 for DDP configuration) are not applicable to W66CQ2NQUAHJ TR. PCB layout reuse is possible, but firmware initialization must be device-specific.
W66CQ2NQUAHJ TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 4Gbit
- Memory Organization:
- 128M x 32
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 2.133 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66CQ2NQUAHJ TR FAQ
1.How can I place an order for W66CQ2NQUAHJ TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W66CQ2NQUAHJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66CQ2NQUAHJ TR reliable?
The price and inventory of W66CQ2NQUAHJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66CQ2NQUAHJ TR is usually 5 days.
3.What payment methods are accepted for W66CQ2NQUAHJ TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66CQ2NQUAHJ TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66CQ2NQUAHJ TR?
W66CQ2NQUAHJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66CQ2NQUAHJ TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66CQ2NQUAHJ TR?
For technical support, including W66CQ2NQUAHJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66CQ2NQUAHJ TR requirements.
6.How does Aetrix verify that W66CQ2NQUAHJ TR is sourced from the original manufacturer or authorized distributors?
All W66CQ2NQUAHJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66CQ2NQUAHJ TR meets industry standards.
7.What is the process for return or replacement of W66CQ2NQUAHJ TR?
All W66CQ2NQUAHJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66CQ2NQUAHJ TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66CQ2NQUAHJ TR part is unused and in its original packaging.
Return procedure for W66CQ2NQUAHJ TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66CQ2NQUAHJ TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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