Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Winbond Electronics Corporation W9412G6IH-5

Part No.:
W9412G6IH-5
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
66-TSSOP (0.400", 10.16mm Width)
Datasheet:
AetrixW9412G6IH-5.pdf
Description:
IC DRAM 128MBIT SSTL2 66TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,759

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

W9412G6IH from Winbond Electronics is a 2M × 4 banks × 16-bit DDR SDRAM operating at 200 MHz (tCK = 5 ns), compliant with DDR400/CL3 specification, supporting CAS latency of 2, 2.5, 3, or 4, and packaged in 66-pin TSOP II. It delivers up to 400 MT/s data bandwidth and is used as main memory in embedded computing and industrial control systems requiring synchronous burst-access storage.

For engineers reviewing the W9412G6IH datasheet, W9412G6IH pinout, W9412G6IH application, or W9412G6IH equivalent, key selection considerations include its SSTL_2 interface compliance, programmable burst length (2/4/8), differential clock input (CLK/CLK̅), DQS edge-/center-aligned timing for read/write, and support for auto-refresh and self-refresh modes in temperature-constrained environments.

Technical Context

This DDR SDRAM implements a 4-bank architecture with independent row activation and column access, enabling bank interleaving to hide tRCD and tRP delays. Its DLL (Delay-Locked Loop) synchronizes internal timing to external clocks, and mode register configuration sets CAS latency, burst length, and addressing mode before operation.

Command decoding relies on CS, RAS̅, CAS̅, and WE̅ inputs with defined truth tables; all address/control signals are sampled on the CLK/CLK̅ crossing point. Read and write operations use bidirectional DQS aligned to data edges (read) or center (write), while LDM/UDM provide per-byte write masking for DQ[7:0] and DQ[15:8], respectively.

Key Specifications

ParameterValue and Actual Design Meaning
Organization2M words × 4 banks × 16 bits = 64 Mbit density; supports 16-bit wide data bus interfaces without glue logic.
Speed Grade-5 suffix indicates DDR400/CL3 compliance (tCK = 5 ns min, CL = 3); guaranteed operation from 0°C to 70°C.
Clock FrequencyUp to 200 MHz (5 ns cycle time); requires stable differential CLK/CLK̅ with controlled slew rate per JEDEC DDR-SDRAM spec.
I/O InterfaceSSTL_2 standard; requires VREF = 1.25 V ± 0.1 V for reliable signal thresholding on address/control/data lines.
Power SupplyVDD/VDDQ = 2.5 V ± 0.2 V; separate VDDQ/VSSQ rails reduce I/O noise coupling into core logic.
Refresh Interval64 ms maximum refresh period (4K rows); auto-refresh command interval tREFI ≤ 15.6 µs ensures data retention.
Current DrawIDD0 ≤ 130 mA (one bank active-precharge); IDD6 ≤ 3 mA (self-refresh) enables low-power standby in battery-backed systems.

Pinout & Package

Packaged in 66-pin TSOP II (400 mil), lead-free and RoHS-compliant, with 0.5 mm pitch and standard JEDEC MO-143 footprint.

Pin/TerminalCircuit RoleDesign Meaning
A0–A11Address InputMultiplexed row/column address lines; A10 controls auto-precharge enable during column commands.
BA0, BA1Bank Select2-bit bank address for selecting one of four independent memory banks during activate/read/write.
DQ0–DQ15Data I/O16-bit bidirectional data bus synchronized to both edges of DQS; supports burst lengths of 2, 4, or 8.
LDQS, UDQSData StrobeLower/upper byte DQS; edge-aligned to read data, center-aligned to write data; critical for DDR timing margin.
LDM, UDMWrite MaskPer-byte mask control: LDM for DQ[7:0], UDM for DQ[15:8]; asserted high masks corresponding write data.
CLK, CLK̅Differential ClockTiming reference for all command/address sampling; crossing point defines valid setup/hold windows.
CKEClock EnableControls entry/exit from power-down, self-refresh, and suspend modes; low disables internal clocking.
CS̅, RAS̅, CAS̅, WE̅Command InputsActive-low command decoder inputs; define bank activate, precharge, read, write, MRS, and refresh operations.
VREFReference Voltage1.25 V reference for SSTL_2 input buffers; must be stable and low-noise to prevent false command latching.
VDD, VDDQ, VSS, VSSQPower/GroundVDD/VSS for core logic; VDDQ/VSSQ isolated for I/O drivers to minimize switching noise on data paths.

Key Features

FeatureDesign Value
Programmable CAS LatencyCL = 2, 2.5, 3, or 4 via Mode Register; allows system-level tuning of read latency vs. timing margin.
Burst Length FlexibilityConfigurable 2/4/8-word bursts; sequential or interleaved addressing mode selectable for optimal cache-line alignment.
DLL-Based Timing ControlOn-die Delay-Locked Loop locks to incoming CLK/CLK̅; eliminates clock skew between internal and external timing domains.
Power Management ModesPrecharged/Active Power Down and Self Refresh reduce IDD6 to ≤3 mA; extends hold time during host sleep states.
Write Data MaskingIndependent LDM/UDM pins enable selective byte masking per 16-bit write; avoids read-modify-write cycles in partial updates.

Applications

Industrial HMI PanelsNetwork Edge Routers

Use Scenario: Real-time display buffering and GUI rendering in fanless panel PCs deployed in factory automation.

IC Role / Device Role / Timing Role: Main memory for ARM-based SoC, providing burst-access storage for frame buffers and OS code execution.

Use Value: 4-bank interleaving hides tRP/tRCD delays, sustaining >300 MB/s sustained bandwidth under mixed read/write loads.

Use Scenario: Packet buffering and lookup table storage in Layer 3 switches handling 100 Mbps–1 Gbps traffic.

IC Role / Device Role / Timing Role: Shared packet buffer memory interfaced to network processor via 16-bit DDR bus with SSTL_2 signaling.

Use Value: CL3 timing and 200 MHz operation meet deterministic latency requirements for <10 µs packet forwarding decisions.

Medical Imaging ControllersAutomated Test Equipment (ATE)

Use Scenario: Acquisition buffer for ultrasound beamforming engines requiring continuous 16-bit sample streaming.

IC Role / Device Role / Timing Role: High-throughput data capture memory synchronized to ADC clock via DLL-locked DQS strobes.

Use Value: DQS center-alignment on writes ensures precise timing capture of 40 MSPS sample streams without skew-induced bit errors.

Use Scenario: Pattern memory for digital I/O test vectors in semiconductor ATE platforms running at 200 MHz.

IC Role / Device Role / Timing Role: Vector storage for parallel pin electronics; accessed via burst reads aligned to tester master clock.

Use Value: Auto-refresh every 15.6 µs guarantees data integrity across multi-hour test sequences without host intervention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT46V32M16P-5BSame 64 Mbit density, 16-bit bus, DDR400/CL3; but uses 60-ball BGA (FBGA60), not TSOP II.Requires PCB redesign due to different package, footprint, and thermal profile; better high-frequency signal integrity.Select when board space is constrained and layout supports BGA routing; avoid if legacy TSOP II socket or rework capability is required.
IS42S16400F-5BLIdentical 64 Mbit, 16-bit, DDR400/CL3 spec; same 66-pin TSOP II package and pinout; fully pin-compatible.No hardware changes needed; drop-in replacement with identical timing, voltage, and thermal behavior.Preferred for direct substitution where second-source assurance and long-term supply continuity are critical.

Compared with W9412G6IH, MT46V32M16P-5B offers superior high-speed routing but mandates PCB revision, while IS42S16400F-5BL provides true pin-to-pin compatibility and identical thermal/power characteristics-making it the lowest-risk alternative for production continuity.

Availability

W9412G6IH is available at Aetrix Electronics and suitable for industrial HMI panels, network edge routers, medical imaging controllers, and automated test equipment requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for W9412G6IH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design heritage and ISO 9001/TS 16949 certified manufacturing.

The W9412G6IH belongs to Winbond's DDR SDRAM product line, engineered for cost-sensitive, reliability-critical embedded systems where TSOP II packaging, industrial temperature tolerance, and JEDEC-compliant DDR400 performance are essential.

FAQ

What is the maximum clock frequency supported by the W9412G6IH?

The W9412G6IH supports a maximum clock frequency of 200 MHz, corresponding to a minimum clock cycle time (tCK) of 5 ns. This is validated for the -5 speed grade under DDR400/CL3 specifications, with operation guaranteed from 0°C to 70°C. The device achieves this using an internal DLL locked to the differential CLK/CLK̅ inputs, ensuring stable timing margins across process and voltage variations. W9412G6IH does not support 250 MHz operation unless explicitly rated for the -4 grade, which is not applicable to this specific part number.

Does the W9412G6IH support self-refresh mode, and what is its current draw in that state?

Yes, the W9412G6IH supports self-refresh mode, entered via the Self Refresh Entry command (RAS̅=L, CAS̅=L, WE̅=H, CKE=L). In this mode, the internal refresh controller maintains data retention without external clocking, and the DLL is automatically disabled. The maximum self-refresh current (IDD6) is 3 mA, enabling ultra-low-power operation during host sleep or power-loss scenarios. W9412G6IH requires VREF to remain stable during self-refresh, and exit requires CKE reassertion followed by 200 NOP cycles before issuing further commands.

How is write data masked on the W9412G6IH, and which pins control it?

Write data masking on the W9412G6IH is performed using two dedicated pins: LDM (pin 20) controls masking for DQ[7:0], and UDM (pin 43) controls masking for DQ[15:8]. When either signal is asserted high during a burst write, the corresponding 8-bit byte is masked and not written to the memory array. This enables efficient partial-word updates without requiring read-modify-write sequences. W9412G6IH synchronizes LDM/UDM to both edges of DQS, matching the data strobe timing for precise per-cycle masking control.

What package type and pin count does the W9412G6IH use, and is it RoHS-compliant?

The W9412G6IH uses a 66-pin TSOP II (Thin Small Outline Package) with 400 mil body width and 0.5 mm lead pitch, conforming to JEDEC MO-143 mechanical standards. It is lead-free and fully RoHS-compliant, utilizing environmentally safe materials in both die attach and lead finish. The package includes separate VDDQ/VSSQ rails for I/O noise isolation and NC pins (e.g., pins 14, 17, 19, 25, 42, 43, 50, 53) that must be tied to ground or left floating per datasheet guidance. W9412G6IH's TSOP II form factor supports wave soldering and is compatible with standard SMT assembly processes.

Can the W9412G6IH operate with a CAS latency of 2, and what are the timing implications?

Yes, the W9412G6IH supports CAS latency (CL) values of 2, 2.5, 3, and 4, configured via the Mode Register Set command. For CL = 2 operation, the minimum tCK is 6 ns (166 MHz), and tRCD(min) is 12 ns - stricter than CL = 3's 15 ns requirement. However, the -5 speed grade of W9412G6IH is specified for CL = 3 at 200 MHz; CL = 2 operation is only guaranteed for -6/-6I grades. Using CL = 2 on W9412G6IH may violate tRCD or tRP timing in high-speed designs and requires validation against actual board-level signal integrity. W9412G6IH's datasheet specifies CL = 2 parameters only for -6/-6I variants, not for the -5 suffix.

W9412G6IH-5 Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
66-TSSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR
Memory Size:
128Mbit
Memory Organization:
8M x 16
Memory Interface:
SSTL_2
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
50 ns
Voltage - Supply:
2.3V ~ 2.7V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
66-TSOP II

W9412G6IH-5 FAQ

1.How can I place an order for W9412G6IH-5 through Aetrix?

Please submit a Request for Quotation (RFQ) for W9412G6IH-5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9412G6IH-5 reliable?

The price and inventory of W9412G6IH-5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9412G6IH-5 is usually 5 days.

3.What payment methods are accepted for W9412G6IH-5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9412G6IH-5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9412G6IH-5?

W9412G6IH-5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9412G6IH-5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9412G6IH-5?

For technical support, including W9412G6IH-5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9412G6IH-5 requirements.

6.How does Aetrix verify that W9412G6IH-5 is sourced from the original manufacturer or authorized distributors?

All W9412G6IH-5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9412G6IH-5 meets industry standards.

7.What is the process for return or replacement of W9412G6IH-5?

All W9412G6IH-5 units undergo pre-shipment inspection (PSI). If there is an issue with W9412G6IH-5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9412G6IH-5 part is unused and in its original packaging.

Return procedure for W9412G6IH-5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

W9412G6IH-5 Tags

  • W9412G6IH-5
  • W9412G6IH-5 PDF
  • W9412G6IH-5 Datasheet
  • W9412G6IH-5 Specifications
  • W9412G6IH-5 Images
  • Winbond Electronics Corporation
  • Winbond Electronics Corporation W9412G6IH-5
  • Buy W9412G6IH-5
  • W9412G6IH-5 Price
  • W9412G6IH-5 Distributor
  • W9412G6IH-5 Supplier
  • W9412G6IH-5 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER