Winbond Electronics Corporation W9412G6JB-5
- Part No.:
- W9412G6JB-5
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 54-TFBGA
- Datasheet:
-
W9412G6JB-5.pdf
- Description:
- IC DRAM 128MBIT SSTL2 54TFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,597
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Product details
Overview
W9412G6JB-5 from Winbond is a 2M × 4 banks × 16-bit DDR SDRAM operating at up to 200 MHz (DDR400), with CAS Latency 3, 2.5V ±0.2V supply, and SSTL_2 interface - designed for main memory in embedded computing, industrial controllers, and legacy PC-compatible systems requiring stable low-power DRAM.
For engineers reviewing the W9412G6JB-5 datasheet, W9412G6JB-5 pinout, W9412G6JB-5 application, or W9412G6JB-5 equivalent, key selection factors include its -5 speed grade (DDR400/CL3), 60-ball TFBGA package, differential clock support, programmable burst length (2/4/8), and self-refresh capability at ≤2 mA.
Technical Context
This DDR SDRAM implements a double-data-rate architecture synchronized to both edges of DQS, with edge-aligned read data and center-aligned write data. It supports bank-interleaved operations across four independent 2M-word banks and uses a DLL for clock skew compensation - enabled via EMRS during initialization.
Command decoding relies on multiplexed address pins (A0–A11) and bank-select inputs (BA0/BA1), with mode register configuration defining CAS latency, burst length, and addressing mode. Refresh is handled via auto-refresh (tREFI = 64 ms) or self-refresh (IDD6 ≤ 2 mA), both compliant with JEDEC Standard No. 21-C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2M words × 4 banks × 16 bits = 128 Mbit total capacity |
| Data Rate / Speed Grade | DDR400 (200 MHz clock, 400 MT/s), CL3 timing |
| Supply Voltage | 2.5V ±0.2V - compatible with standard DDR I/O rails |
| Clock Cycle Time (tCK) | 5 ns min (200 MHz), 12 ns max - defines minimum command interval |
| Active-to-Precharge (tRAS) | 40 ns min - constrains maximum row activation duration per bank |
| Auto-Refresh Interval | 64 ms (4K refresh cycles) - requires ≥15.6 µs between refresh commands |
| Self-Refresh Current | ≤2 mA - enables low-power retention during system suspend |
Pinout & Package
W9412G6JB-5 is housed in a RoHS-compliant 60-ball Thin Fine-Pitch BGA (TFBGA) package measuring 8 mm × 13 mm with 0.8 mm ball pitch. Power and signal integrity are enhanced by separate VDDQ/VSSQ rails for I/O buffers and dedicated VREF for SSTL_2 input threshold referencing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A11 | Address Input | Multiplexed row/column address lines; A10 controls precharge-all when high |
| BA0, BA1 | Bank Select | Selects one of four banks for activate/read/write/precharge commands |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus synchronized to both edges of DQS |
| LDQS, UDQS | Data Strobe | Lower/upper byte strobes - edge-aligned on read, center-aligned on write |
| LDM, UDM | Data Mask | Byte-level write masking: LDM for DQ0–DQ7, UDM for DQ8–DQ15 |
| CLK, CLK | Differential Clock | Timing reference for all control/address inputs; crossing point defines sampling edge |
| CKE | Clock Enable | Controls entry/exit from power-down and self-refresh modes |
| CS, RAS, CAS, WE | Command Inputs | Decode bank activate, precharge, read, write, refresh, and mode register commands |
| VREF | Reference Voltage | Stabilized 1.25V reference for SSTL_2 input threshold - must be maintained in self-refresh |
| VDD, VSS | Core Power/Ground | 2.5V logic supply and return for internal circuitry |
| VDDQ, VSSQ | I/O Power/Ground | Isolated 2.5V rail for output drivers - reduces switching noise coupling to core logic |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Latency | Configurable CL2, CL2.5, CL3, or CL4 via mode register - enables timing optimization across system clock margins |
| Burst Length Flexibility | Supports BL2, BL4, or BL8 with sequential or interleaved addressing - balances bandwidth efficiency and access granularity |
| Dual Power-Down Modes | Precharged Power Down (low IDD1) and Active Power Down (retains row open) - reduces dynamic and standby current selectively |
| Write Data Masking | Per-byte masking via LDM/UDM - eliminates need for read-modify-write cycles during partial writes |
| DLL-Based Timing Control | Digital delay-locked loop enables precise DQS-to-clock alignment - critical for reliable DDR timing at 200 MHz |
Applications
| Industrial HMI Systems | Legacy Embedded PCs |
|---|---|
|
Use Scenario: Touch-enabled operator panels with real-time UI rendering and local data logging. IC Role / Device Role / Timing Role: Main system memory buffering graphics frame buffers and application code execution. Use Value: 128 Mbit density and DDR400 bandwidth support concurrent display updates and background task execution without memory bottleneck. |
Use Scenario: Fanless x86-based controllers running Windows CE or Linux in factory automation cabinets. IC Role / Device Role / Timing Role: Primary DRAM for CPU cache-coherent memory subsystem interfacing via northbridge or integrated memory controller. Use Value: SSTL_2 compatibility and CL3 timing ensure drop-in replacement for legacy DDR designs without PCB redesign. |
| Network Edge Appliances | Medical Diagnostic Terminals |
|
Use Scenario: Low-power Ethernet gateways aggregating sensor data before forwarding to cloud infrastructure. IC Role / Device Role / Timing Role: Buffering packet queues and firmware runtime memory in resource-constrained SoC platforms. Use Value: Self-refresh current ≤2 mA enables extended battery-backed operation during network outages without data loss. |
Use Scenario: Portable ultrasound or ECG terminals requiring certified, long-lifecycle components with thermal stability. IC Role / Device Role / Timing Role: Frame buffer and application memory supporting deterministic real-time image processing pipelines. Use Value: Industrial temperature range (0°C to 70°C) and proven JEDEC DDR compliance meet medical device reliability requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT46V32M16-5B:J (Micron) | Same 128 Mbit organization, 60-ball TFBGA, DDR400/CL3, but rated for 0°C to 85°C and uses different EMRS encoding for DLL enable | Broader temperature range suits extended-temperature industrial deployments; minor initialization sequence differences require firmware validation | Preferred where extended temp rating or Micron's long-term supply assurance is prioritized over Winbond-specific timing margins |
| K4H511638D-UCB3 (Samsung) | Identical DDR400/CL3 speed grade and 2.5V supply, but uses 66-ball BGA (8×13 mm same footprint) and has tRC = 48 ns vs. W9412G6JB-5's 50 ns | Slightly tighter tRC allows marginally higher sustained refresh efficiency; pinout differs in VDDQ/VSSQ distribution requiring layout review | Consider when optimizing for worst-case refresh overhead in high-temperature environments, with attention to power plane routing changes |
Compared with MT46V32M16-5B:J and K4H511638D-UCB3, W9412G6JB-5 offers identical DDR400/CL3 performance in a functionally compatible 60-ball TFBGA, but with narrower temperature grading and Winbond-specific DLL initialization - making it optimal for cost-sensitive, volume-manufactured legacy DDR systems where second-source flexibility is secondary to qualification continuity.
Availability
W9412G6JB-5 is available at Aetrix Electronics and suitable for industrial HMI systems, legacy embedded PCs, and network edge appliances requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR SDRAM functionality.
Supply support for W9412G6JB-5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash storage, and microcontrollers, with over 30 years of DRAM design heritage.
W9412G6JB-5 belongs to Winbond's DDR SDRAM product line, engineered for cost-effective, reliable main memory in industrial and embedded systems where DDR I compatibility, thermal robustness, and long-term manufacturability are primary design goals.
FAQ
What is the maximum clock frequency supported by W9412G6JB-5?
W9412G6JB-5 supports a maximum clock frequency of 200 MHz, corresponding to DDR400 data transfer rates. This is defined by its -5 speed grade and confirmed by tCK = 5 ns minimum in the datasheet's KEY PARAMETERS table. The device must operate within this limit to meet CL3 timing specifications and avoid setup/hold violations on address, command, and data signals.
Does W9412G6JB-5 support self-refresh mode, and what is its typical current draw?
Yes, W9412G6JB-5 supports self-refresh mode with a maximum current draw of 2 mA, as specified in the IDD6 parameter under KEY PARAMETERS. This low-current state allows the device to retain memory contents without external clocks or commands, making it suitable for battery-backed or low-power suspend applications where system-level power gating is required.
What package type and ball count does W9412G6JB-5 use?
W9412G6JB-5 uses a 60-ball Thin Fine-Pitch BGA (TFBGA) package measuring 8 mm × 13 mm with 0.8 mm ball pitch. This is explicitly stated in Section 2 (FEATURES) and detailed in Section 13 (Package Specification) of the datasheet, and matches the ball configuration diagram in Section 5.
How is burst length configured on W9412G6JB-5?
Burst length on W9412G6JB-5 is configured via the Mode Register Set (MRS) command, using address bits A2–A0. Supported lengths are 2, 4, or 8, with sequential or interleaved addressing selectable via A3. This configuration must be performed during power-up initialization and remains active until reprogrammed - no dynamic change during operation is supported.
What is the role of the VREF pin on W9412G6JB-5, and is it required in self-refresh mode?
The VREF pin on W9412G6JB-5 provides a stable 1.25V reference for SSTL_2 input thresholding of address, command, and control signals. As stated in Section 8.2.14, VREF must be maintained during self-refresh mode because CKE is an SSTL_2 input - failure to hold VREF risks incorrect command interpretation upon self-refresh exit.
W9412G6JB-5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 54-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR
- Memory Size:
- 128Mbit
- Memory Organization:
- 8M x 16
- Memory Interface:
- SSTL_2
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 50 ns
- Voltage - Supply:
- 2.7V ~ 2.3V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TFBGA (8x8)
W9412G6JB-5 FAQ
1.How can I place an order for W9412G6JB-5 through Aetrix?
Please submit a Request for Quotation (RFQ) for W9412G6JB-5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9412G6JB-5 reliable?
The price and inventory of W9412G6JB-5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9412G6JB-5 is usually 5 days.
3.What payment methods are accepted for W9412G6JB-5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9412G6JB-5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9412G6JB-5?
W9412G6JB-5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9412G6JB-5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9412G6JB-5?
For technical support, including W9412G6JB-5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9412G6JB-5 requirements.
6.How does Aetrix verify that W9412G6JB-5 is sourced from the original manufacturer or authorized distributors?
All W9412G6JB-5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9412G6JB-5 meets industry standards.
7.What is the process for return or replacement of W9412G6JB-5?
All W9412G6JB-5 units undergo pre-shipment inspection (PSI). If there is an issue with W9412G6JB-5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9412G6JB-5 part is unused and in its original packaging.
Return procedure for W9412G6JB-5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9412G6JB-5 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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