Winbond Electronics Corporation W9412G6JH-5I

Overview

W9412G6JH-5I from Winbond Electronics is a 2M × 4 banks × 16-bit DDR SDRAM operating at 200 MHz (tCK = 5 ns), compliant with DDR400/CL3 specification, featuring SSTL_2 interface, programmable CAS latency (2–4), and 66-pin TSOP II package. It serves as main memory in embedded controllers and industrial computing platforms requiring low-power, pin-efficient synchronous DRAM.

For engineers reviewing the W9412G6JH-5I datasheet, W9412G6JH-5I pinout, W9412G6JH-5I application, or W9412G6JH-5I equivalent, key selection considerations include CL3 timing compliance, 2.5V ±0.2V supply tolerance, 4-bank interleaving support, DQS edge/center alignment behavior, and TSOP II thermal/mechanical constraints for PCB layout and signal integrity validation.

Technical Context

This DDR SDRAM implements double-data-rate architecture synchronized to both edges of CLK/CLK differential clock inputs, with DQS aligned to read data edges and write data centers. Its DLL-enabled timing control supports stable operation across temperature and voltage variations, and mode register programming allows dynamic configuration of burst length (2/4/8), addressing mode (sequential/interleave), and CAS latency.

The device integrates four independent 2M-word banks with shared command/address bus and separate I/O power (VDDQ/VSSQ) for noise isolation. Refresh is managed via Auto Refresh (4K rows/64 ms) or Self Refresh (IDD6 ≤ 2 mA), and power-down modes (Precharged/Active) reduce IDD during idle cycles without losing data integrity.

Key Specifications

Pinout & Package

W9412G6JH-5I uses a 66-pin Thin Small Outline Package (TSOP II), 400 mil body width, with dual VDD/VSS and isolated VDDQ/VSSQ rails for signal integrity. Pin 1 is located at bottom-left corner when notch faces up.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Compared with MT46V32M16P-5B:J and K4H511638D-UCB3, W9412G6JH-5I offers lower active current (IDD4W = 115 mA), explicit LDM/UDM byte masking, and tighter thermal specs for industrial ambient ranges-making it optimal for thermally constrained, power-sensitive embedded designs.

Availability

W9412G6JH-5I is available at Aetrix Electronics and suitable for industrial HMI controllers, medical imaging subsystems, and automotive ADAS camera modules requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W9412G6JH-5I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W9412G6JH series belongs to Winbond's industrial-grade DDR SDRAM product line, designed specifically for embedded systems demanding robust operation at -40°C to +85°C with strict power and timing predictability.

FAQ

What is the maximum clock frequency supported by W9412G6JH-5I?

W9412G6JH-5I supports a maximum clock frequency of 200 MHz, corresponding to a minimum clock cycle time (tCK) of 5 ns. This is validated under DDR400/CL3 specification with 2.5V ±0.2V supply and meets JEDEC JESD79-2F timing requirements for stable operation across industrial temperature range (-40°C to +85°C). The W9412G6JH-5I datasheet specifies tCK = 5 ns as the guaranteed minimum in the -5 speed grade.

Does W9412G6JH-5I support CAS Latency 2.5?

Yes, W9412G6JH-5I supports programmable CAS Latency values of 2, 2.5, 3, and 4 via Mode Register configuration. CL2.5 is implemented using fractional clock cycle timing and requires precise DQS-to-CLK phase alignment; it is validated in the W9412G6JH-5I datasheet Table 3 under AC characteristics for -5 grade operation at 200 MHz.

What is the function of the VREF pin on W9412G6JH-5I?

The VREF pin on W9412G6JH-5I provides a stable 2.5V reference voltage for SSTL_2 input receivers, ensuring consistent switching thresholds for address, command, and control signals. It must remain powered and stable during all operational modes-including Self Refresh-where CKE is low but VREF is still required to maintain input validity. The W9412G6JH-5I datasheet specifies VREF = 2.5V ±2% for reliable operation.

Can W9412G6JH-5I operate in Self Refresh mode with CKE held low?

Yes, W9412G6JH-5I enters Self Refresh mode when CKE is driven low while all banks are idle, consuming ≤2 mA (IDD6) to retain data without external clocking. The W9412G6JH-5I datasheet confirms this behavior in Section 7.2.14 and specifies that VREF must remain active during Self Refresh to preserve input receiver functionality for wake-up detection.

How many banks does W9412G6JH-5I have, and how are they accessed?

W9412G6JH-5I has four independent memory banks (Bank #0 to #3), selected using BA0 and BA1 address pins during activate, precharge, and read/write commands. Bank-level interleaving enables concurrent row activation across banks, improving effective bandwidth-e.g., 4-bank interleave read operation is explicitly timed in W9412G6JH-5I datasheet Figures 11.21–11.22.