Winbond Electronics Corporation W9412G6KH-5

Overview

W9412G6KH-5 from Winbond Electronics is a 2M × 4 banks × 16-bit DDR SDRAM operating at 200 MHz with 2.5V ±0.2V supply, CAS latency 3, and tCK = 5 ns (DDR400/CL3). It delivers up to 400M words/s bandwidth and supports auto-refresh, self-refresh, and programmable burst lengths (2/4/8) for embedded memory subsystems in industrial controllers and legacy PC platforms.

For engineers reviewing the W9412G6KH-5 datasheet, W9412G6KH-5 pinout, W9412G6KH-5 application, or W9412G6KH-5 equivalent, key selection considerations include its TSOP II-66 package, SSTL_2 interface compliance, differential clock (CLK/CLK̅) timing, DQS edge-/center-aligned I/O synchronization, and -5 speed grade's 0°C to 70°C operating range.

Technical Context

This DDR SDRAM implements a double-data-rate architecture synchronized to both edges of DQS, with separate VDDQ/VSSQ I/O power domains for noise isolation. Its command decoder interprets RAS/CAS/WE/CS combinations to execute bank activate, precharge, read/write, MRS/EMRS, and refresh operations under CKE control.

The device integrates a DLL for DQS-to-clock alignment, supports programmable CAS latency (2/2.5/3), burst addressing modes (sequential/interleaved), and dual data mask signals (LDM/UDM) for per-byte write masking. Power-down modes include precharged and active variants, with self-refresh current capped at 2 mA.

Key Specifications

Pinout & Package

W9412G6KH-5 is packaged in a RoHS-compliant, lead-free TSOP II-66 package with 66 pins arranged in two rows. The package supports surface-mount assembly and thermal performance suitable for industrial ambient conditions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Compared with W9412G6KH-5, MT46V32M16-5B:J offers higher density but mandates board-level voltage and layout changes, while IS42S16100E-5BLI provides functional equivalence at lower pin count but omits DLL control-making W9412G6KH-5 optimal for designs requiring precise DQS alignment and full JEDEC DDR-400 feature compliance.

Availability

W9412G6KH-5 is available at Aetrix Electronics and suitable for industrial HMI controllers, legacy PC memory modules, and network edge routers requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for W9412G6KH-5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and computing markets.

W9412G6KH-5 belongs to Winbond's legacy DDR SDRAM product line, designed specifically for cost-sensitive, reliability-critical applications where DDR-400 performance and TSOP II packaging are required without migration to DDR2 or later generations.

FAQ

What is the maximum clock frequency supported by W9412G6KH-5?

W9412G6KH-5 supports a maximum clock frequency of 200 MHz, corresponding to a minimum clock cycle time (tCK) of 5 ns. This meets the DDR-400 specification (400 MT/s data rate) with CAS latency 3. Operation beyond this frequency violates the device's AC timing specifications and may result in data corruption or command decode failure.

Does W9412G6KH-5 require an external DLL calibration sequence during initialization?

Yes, W9412G6KH-5 requires explicit DLL enablement via Extended Mode Register Set (EMRS) and subsequent DLL reset via Mode Register Set (MRS) with A8 = high, followed by ≥200 stable clock cycles before issuing executable commands. This sequence ensures DQS-to-clock alignment for reliable read capture at DDR-400 speeds.

Can W9412G6KH-5 operate in self-refresh mode without external clock input?

Yes, W9412G6KH-5 enters self-refresh mode when CKE is held low after issuing the Self Refresh Entry command. In this state, the internal refresh counter operates autonomously using an on-die oscillator, and no external CLK/CLK̅ signal is required-only VDD, VDDQ, and VREF must remain powered.

What is the function of the A10 pin during precharge commands on W9412G6KH-5?

On W9412G6KH-5, A10 acts as the Auto-Precharge bit during precharge commands: when A10 = low, only the bank selected by BA0/BA1 is precharged; when A10 = high, Precharge All is executed across all four banks. This enables flexible bank management without requiring separate command encoding.

Is W9412G6KH-5 compatible with standard DDR-400 memory controllers?

Yes, W9412G6KH-5 complies fully with JEDEC Standard No. 21-C for DDR SDRAM, including command encoding, timing parameters (tRCD, tRP, tRAS), SSTL_2 interface levels, and DLL behavior. It interoperates with industry-standard DDR-400 controllers such as those in Intel 915/945 chipsets and Freescale MPC85xx processors.