Winbond Electronics Corporation W9412G6KH-5I

Overview

W9412G6KH-5I from Winbond Electronics is a 2M × 4 banks × 16-bit DDR SDRAM operating at 200 MHz with 2.5V ±0.2V supply, CAS latency 2/2.5/3, and industrial temperature range (–40°C to +85°C). It delivers up to 400M words/s bandwidth using SSTL_2 interface, differential CLK/CLK inputs, and edge-aligned DQS for reads-used in embedded controllers and industrial HMIs requiring reliable synchronous memory.

For engineers reviewing the W9412G6KH-5I datasheet, W9412G6KH-5I pinout, W9412G6KH-5I application, or W9412G6KH-5I equivalent, key selection factors include its TSOP II-66 package, DDR400/CL3 compliance, self-refresh current ≤2 mA, tRAS ≥40 ns, and support for burst lengths of 2/4/8 with programmable mode register configuration.

Technical Context

This DDR SDRAM implements a 4-bank architecture with row/column address multiplexing on A0–A11 and bank selection via BA0/BA1. Its DLL-enabled timing control synchronizes DQ/DQS edges for read/write operations, while command decoding relies on CS, RAS, CAS, and WE with CKE-gated clock enable logic.

The device supports full DDR functionality including auto-refresh (tREFI = 64 ms), self-refresh (IDD6 ≤ 2 mA), precharge power-down, and write data masking via LDM/UDM. Mode Register Set (MRS) and Extended Mode Register Set (EMRS) configure CAS latency, burst length, addressing mode, and DLL enable/reset-requiring strict initialization sequence post-power-up.

Key Specifications

Pinout & Package

W9412G6KH-5I is housed in a RoHS-compliant, lead-free TSOP II-66 package (13.1 mm × 20.0 mm × 1.2 mm), with dedicated VDD/VSS and isolated VDDQ/VSSQ rails for logic and I/O domains.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Compared with MT46V32M16-5B:J and IS42S16160F-5BL, W9412G6KH-5I uniquely combines TSOP II-66 pin compatibility, industrial temperature certification, and ≤2 mA self-refresh-making it optimal for drop-in upgrades in existing industrial PCBs without layout changes or thermal redesign.

Availability

W9412G6KH-5I is available at Aetrix Electronics and suitable for industrial HMIs, embedded gateways, medical terminals, ruggedized data loggers, and factory automation controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W9412G6KH-5I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and computing markets.

The W9412G6KH series belongs to Winbond's industrial-grade DDR SDRAM product line, designed specifically for applications demanding extended temperature operation, low-power self-refresh, and pin-compatible migration paths from legacy DDR1 designs.

FAQ

What is the maximum supported clock frequency for W9412G6KH-5I?

W9412G6KH-5I supports a maximum clock frequency of 200 MHz, corresponding to DDR400 operation (400 MT/s). This is validated under industrial temperature conditions (–40°C to +85°C) with 2.5 V ±0.2 V supply. The minimum clock cycle time (tCK) is 5 ns for CAS latency 3, and timing parameters such as tRCD and tRP are specified accordingly in the datasheet revision A03.

Does W9412G6KH-5I support CAS latency 2.5, and how is it configured?

Yes, W9412G6KH-5I supports CAS latency 2.5, which is programmed via the Mode Register Set (MRS) command using the A6–A4 field. This setting is valid only when the device is operated at 166 MHz (tCK = 6 ns) or lower. The MRS command must be issued after power-up initialization and while all banks are idle, and the DLL must be reset and locked before issuing subsequent read commands.

What is the function of the VREF pin on W9412G6KH-5I, and what voltage is required?

The VREF pin on W9412G6KH-5I provides the reference voltage for SSTL_2 input buffers, set to 1.25 V ±1% (half of VDDQ). It must remain stable during all operational modes-including self-refresh-where input sampling is disabled but VREF integrity is required to maintain input threshold validity. External decoupling is recommended per Winbond's layout guidelines.

How does W9412G6KH-5I handle write data masking, and which pins control it?

W9412G6KH-5I implements byte-level write masking using LDM (pins 20 and 47) for DQ0–DQ7 and UDM (pins 42 and 43) for DQ8–DQ15. When asserted high during a write burst, each mask signal suppresses the corresponding 8-bit lane. Masking is synchronized to both edges of DQS, enabling precise partial-word updates without read-modify-write cycles.

Is W9412G6KH-5I pin-compatible with other Winbond DDR SDRAMs like W9412G6JH-5I?

Yes, W9412G6KH-5I is pin-compatible with W9412G6JH-5I and other members of the W9412G6xH family sharing the TSOP II-66 package. Both use identical pin numbering, signal assignments, and electrical characteristics. Differences lie in speed grade (-5I vs. -5) and internal binning-not physical layout-allowing direct substitution where industrial temperature range is required.