Winbond Electronics Corporation W9412G6KH-5I TR

Overview

W9412G6KH-5I TR from Winbond is a 2M × 4 banks × 16-bit DDR SDRAM operating at 200 MHz with 2.5 V ±0.2 V supply, CAS latency options of 2/2.5/3, and industrial temperature range (–40°C to +85°C); it delivers up to 400 M words/s bandwidth and supports auto-refresh, self-refresh, and write data masking for embedded memory subsystems in networking edge devices.

For engineers reviewing the W9412G6KH-5I TR datasheet, W9412G6KH-5I TR pinout, W9412G6KH-5I TR application, or W9412G6KH-5I TR equivalent, key selection criteria include DDR400/CL3 timing compliance, TSOP II 66-pin package compatibility, SSTL_2 interface level support, and industrial-grade current consumption (IDD6 ≤ 2 mA in self-refresh).

Technical Context

This DDR SDRAM implements double-data-rate architecture synchronized to both edges of DQS, with differential CLK/CLK inputs referenced at crossing point. It uses a programmable Mode Register to configure burst length (2/4/8), addressing mode (sequential/interleave), and CAS latency - all required before first read/write operation.

The device integrates four independent banks, each with dedicated row/column decoders and sense amplifiers, and includes DLL circuitry for DQS-to-clock alignment. Power management features include precharge power-down, active power-down, and self-refresh entry/exit sequences requiring precise CKE control and 200-cycle DLL lock delay after reset.

Key Specifications

Pinout & Package

W9412G6KH-5I TR is packaged in RoHS-compliant, lead-free TSOP II (Thin Small Outline Package) with 66 pins, 0.65 mm pitch, and standard JEDEC MO-143AC footprint. Pin assignment follows DDR SDRAM conventions with bank-select, address multiplexing, and dual-edge-synchronized DQS/DQ timing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Compared with MT46V32M16P-5B:J and IS42S16100E-5BLI, W9412G6KH-5I TR offers unique CL2.5 support and lower self-refresh current, making it optimal for thermally constrained industrial designs where timing margin and standby power are critical.

Availability

W9412G6KH-5I TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical diagnostic terminals, and automotive ADAS camera modules requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W9412G6KH-5I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W9412G6KH-5I TR belongs to Winbond's DDR SDRAM product line designed specifically for cost-sensitive, high-reliability embedded systems requiring industrial temperature operation and proven DDR400 interoperability.

FAQ

What is the maximum clock frequency supported by W9412G6KH-5I TR?

W9412G6KH-5I TR supports a maximum clock frequency of 200 MHz, corresponding to DDR400 operation with tCK minimum of 5 ns at CAS latency 3. This speed grade is fully characterized across the industrial temperature range (–40°C to +85°C) and requires compliance with DDR400/CL3 timing specifications.

Does W9412G6KH-5I TR support CAS latency 2.5?

Yes, W9412G6KH-5I TR supports programmable CAS latency values of 2, 2.5, and 3 via the Mode Register. The CL2.5 setting provides intermediate timing margin between CL2 and CL3, enabling optimized performance in systems where CL2 is too aggressive and CL3 introduces unnecessary latency overhead.

What package type is used for W9412G6KH-5I TR?

W9412G6KH-5I TR uses a RoHS-compliant, lead-free TSOP II (Thin Small Outline Package) with 66 pins and 0.65 mm pitch. Its JEDEC MO-143AC footprint ensures mechanical and thermal compatibility with standard DDR SDRAM socketing and reflow profiles.

How does the write mask function work on W9412G6KH-5I TR?

W9412G6KH-5I TR implements byte-level write masking using LDM (controls DQ0–DQ7) and UDM (controls DQ8–DQ15). When asserted high during a burst write, each mask signal prevents corresponding data bytes from being written to the memory array - enabling partial updates without read-modify-write cycles.

What is the self-refresh current specification for W9412G6KH-5I TR?

The maximum self-refresh current for W9412G6KH-5I TR is 2 mA, guaranteed across the full industrial temperature range (–40°C to +85°C). This low current enables extended battery-backed or energy-harvesting operation while maintaining data integrity during system sleep states.