Winbond Electronics Corporation W9412G6KH-5 TR

Overview

W9412G6KH-5 TR from Winbond is a 2M × 4 banks × 16-bit DDR SDRAM operating at 200 MHz with 2.5V ±0.2V supply, CAS latency of 3, and tCK = 5 ns (DDR400/CL3), used in embedded computing and industrial control systems requiring synchronous burst memory access.

For engineers reviewing the W9412G6KH-5 TR datasheet, W9412G6KH-5 TR pinout, W9412G6KH-5 TR application, or W9412G6KH-5 TR equivalent, this page delivers verified timing parameters, bank activation behavior, SSTL_2 interface compliance, and TSOP II 66-pin package details essential for DDR layout validation and power sequencing design.

Technical Context

This DDR SDRAM implements double-data-rate architecture synchronized to both edges of DQS, with differential CLK/CLK inputs and programmable mode register settings for burst length (2/4/8), CAS latency (2/2.5/3), and DLL reset. It supports auto-refresh (tREFI = 64 ms) and self-refresh (IDD6 ≤ 2 mA) with 4K-row refresh addressing.

Command decoding relies on CS, RAS, CAS, and WE with bank-select BA0/BA1; read/write operations require tRCD ≥ 20 ns and tRAS ≥ 40 ns; write masking uses LDM/UDM aligned to DQS edges; all I/Os comply with SSTL_2 voltage thresholds and slew rate specifications per JEDEC JESD8-15A.

Key Specifications

Pinout & Package

W9412G6KH-5 TR is housed in a 66-pin TSOP II (Thin Small Outline Package, Type II) with 0.65 mm pitch, featuring separate VDDQ/VSSQ planes for I/O buffers and dedicated DQS/DM pairs for x16 data masking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Compared with MT46V32M16-5B:J and IS42S16160F-6BLI, W9412G6KH-5 TR delivers optimal balance of 400 MT/s performance, x16 bus efficiency, and 66-pin TSOP II compactness for space-constrained industrial controllers and medical devices.

Availability

W9412G6KH-5 TR is available at Aetrix Electronics and suitable for industrial automation, medical imaging, and avionics applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for W9412G6KH-5 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W9412G6KH series belongs to Winbond's legacy DDR SDRAM product line designed specifically for cost-sensitive, high-reliability embedded systems needing JEDEC-compliant DDR400/333 operation with industrial temperature support.

FAQ

What is the maximum clock frequency supported by W9412G6KH-5 TR?

W9412G6KH-5 TR supports a maximum clock frequency of 200 MHz, corresponding to DDR400 operation with tCK = 5 ns. This is validated under the -5 speed grade at 0°C to 70°C ambient temperature, with CL=3 timing and 2.5V ±0.2V supply. The device meets JEDEC DDR SDRAM specification JESD79 for this speed bin.

Does W9412G6KH-5 TR support self-refresh mode, and what is its current draw?

Yes, W9412G6KH-5 TR supports self-refresh mode with maximum current draw of 2 mA (IDD6), as specified in the datasheet. This mode retains memory contents without external clock input and is enabled via the Self Refresh Entry command (RAS=L, CAS=L, WE=H, CKE=L). VREF must remain stable during self-refresh operation.

How many banks does W9412G6KH-5 TR have, and how are they accessed?

W9412G6KH-5 TR has four internal banks organized as 2M × 4 banks × 16 bits. Banks are selected using BA0 and BA1 inputs during activate, read, write, and precharge commands. Independent bank activation enables interleaved access to hide tRCD and tRP delays, improving effective bandwidth in burst-intensive applications.

What is the function of LDM and UDM pins on W9412G6KH-5 TR?

LDM (Lower Data Mask) and UDM (Upper Data Mask) on W9412G6KH-5 TR provide byte-level write masking: LDM controls DQ0–DQ7, UDM controls DQ8–DQ15. When asserted high during a write burst synchronized to DQS edges, the corresponding 8-bit lane is masked, preventing invalid data from being written to the memory array.

Is W9412G6KH-5 TR compatible with standard DDR controller interfaces?

Yes, W9412G6KH-5 TR is fully compatible with standard DDR SDRAM controllers supporting JEDEC JESD79. It uses SSTL_2 signaling, accepts differential CLK/CLK, supports all mandatory DDR commands (activate, precharge, read, write, MRS, EMRS, auto-refresh), and complies with timing parameters including tRCD = 20 ns and tRP = 20 ns at DDR400 speed.