Winbond Electronics Corporation W9425G6JB-5

Overview

W9425G6JB-5 from Winbond is a 4 M × 4 banks × 16-bit DDR SDRAM operating at 200 MHz clock frequency with 2.5 V ±0.2 V supply, CAS latency options of 2/2.5/3, and SSTL_2 interface compliance. It delivers up to 400M words/s bandwidth and supports auto-refresh (7.8 µs interval) and self-refresh (2 mA max), targeting main memory in embedded computing and industrial control systems.

For engineers reviewing the W9425G6JB-5 datasheet, W9425G6JB-5 pinout, W9425G6JB-5 application, or W9425G6JB-5 equivalent, key selection criteria include DDR400/CL3 timing compliance, 60-ball TFBGA (8×13 mm²) package compatibility, burst length programmability (2/4/8), differential clock (CLK/CLK̄) handling, and power-down mode support for low-idle-power designs.

Technical Context

This DDR SDRAM implements double-data-rate architecture synchronized to both edges of DQS during read/write operations, with edge-aligned DQS for reads and center-aligned DQS for writes. Its command decoder interprets RAS̄/CAS̄/WĒ/CS̄ combinations to execute bank activate, precharge, auto-precharge, read, write, MRS, EMRS, and refresh commands.

The device integrates a DLL for clock skew compensation, programmable mode registers for burst length and latency configuration, and separate VDDQ/VSSQ rails for I/O noise isolation. It supports 2-bank and 4-bank interleave read operations and enforces tRAS ≥40 ns and tRC ≥55 ns timing constraints for reliable row activation and refresh sequencing.

Key Specifications

Pinout & Package

W9425G6JB-5 uses a 60-ball TFBGA package (8 mm × 13 mm, 0.8 mm pitch) with RoHS-compliant lead-free construction. Ball assignments follow JEDEC-standard DDR SDRAM layout with dedicated VDDQ/VSSQ planes for I/O noise suppression.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Compared with MT46V32M16-5B:J and IS42S16400F-5BLI, W9425G6JB-5 offers identical DDR400/CL3 performance in a standardized 60-ball TFBGA, but its 40 ns tRAS requirement provides greater timing margin for marginal layouts, while its 2 mA self-refresh current balances power and reliability for industrial thermal profiles.

Availability

W9425G6JB-5 is available at Aetrix Electronics and suitable for industrial HMI panels, network router buffers, medical imaging controllers, and automated test equipment requiring stable component supply across extended product lifecycles.

Supply support for W9425G6JB-5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory and microcontrollers, with over 30 years of DRAM design heritage and ISO 9001-certified wafer fabrication.

W9425G6JB-5 belongs to Winbond's DDR SDRAM product line engineered for cost-sensitive, thermally demanding embedded systems where reliability, long-term availability, and JEDEC-compliant timing are prioritized over high-frequency overclocking.

FAQ

What is the maximum operating temperature range for W9425G6JB-5?

W9425G6JB-5 is rated for 0°C to 70°C operation, as specified in the order information table. This distinguishes it from the -5I variant, which extends to -40°C to 85°C. The W9425G6JB-5 datasheet confirms 2 mA max self-refresh current within this range, and thermal derating is not required up to 70°C ambient under standard airflow conditions.

Does W9425G6JB-5 support both sequential and interleaved burst addressing modes?

Yes, W9425G6JB-5 supports both sequential and interleaved burst addressing, selectable via the A3 bit in the Mode Register. Interleaved mode is required for 2-bank and 4-bank interleave read operations described in timing diagrams 12.19–12.22, enabling efficient multi-bank access patterns essential for high-throughput applications like network buffering.

What is the function of the A10 pin during precharge commands on W9425G6JB-5?

On W9425G6JB-5, A10 determines precharge scope: when A10 = Low during a Bank Precharge command, only the bank selected by BA0/BA1 is precharged; when A10 = High during a Precharge All command, all four banks are simultaneously precharged. This dual-role behavior is explicitly defined in the Ball Description section for A0–A12.

Can W9425G6JB-5 operate with CAS Latency 2.5, and how is it configured?

Yes, W9425G6JB-5 supports CAS Latency 2.5, programmed via bits A6–A4 in the Mode Register Set command. The datasheet's Table 8.10.3 lists binary 010 for CL = 2.5, and timing parameters in Section 4 confirm tCK min = 6 ns at CL = 2.5, validating its use in systems requiring intermediate latency between CL2 and CL3.

What is the purpose of the VREF pin on W9425G6JB-5, and what voltage must it maintain?

The VREF pin on W9425G6JB-5 provides the 2.5 V reference for SSTL_2 input buffer thresholds, ensuring correct logic level interpretation of address, command, and control signals. It must be maintained at 2.5 V ± 2% during all operational modes, including self-refresh, as confirmed in Section 6 Ball Description and Section 10.2 DC Operating Conditions.