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Winbond Electronics Corporation W9425G6JB-5I TR

Part No.:
W9425G6JB-5I TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
60-TFBGA
Datasheet:
AetrixW9425G6JB-5I TR.pdf
Description:
IC DRAM 256MBIT PAR 60TFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,719

Please send an inquiry. Send us your inquiry, and we will respond immediately.

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Product details

Overview

W9425G6JB-5I TR from Winbond is a 64 Mbit (4 M × 4 banks × 16 bits) DDR SDRAM operating at 200 MHz clock frequency with 2.5 V ±0.2 V supply, CAS latency options of 2/2.5/3, and SSTL_2 interface - designed for main memory in industrial embedded systems requiring extended temperature operation (-40°C to +85°C).

For engineers reviewing the W9425G6JB-5I TR datasheet, W9425G6JB-5I TR pinout, W9425G6JB-5I TR application, or W9425G6JB-5I TR equivalent, this page delivers verified DDR timing parameters, ball-level I/O mapping, power-down modes, refresh behavior, and drop-in alternatives for legacy DDR400/CL3 designs.

Technical Context

The W9425G6JB-5I TR implements double-data-rate architecture synchronized to both edges of DQS, with differential CLK/CLK inputs and edge-aligned read data / center-aligned write data. It supports programmable burst lengths (2/4/8), interleave/sequential addressing, and DLL-enabled timing control via EMRS/MRS registers.

Its command set includes Bank Activate, Precharge All, Read/Write with Auto-precharge, Self Refresh Entry/Exit, and Burst Stop - all governed by tRAS ≥40 ns, tRC ≥55 ns, and 7.8 µs refresh interval (8K rows/64 ms). Power management includes Active and Precharged Power Down modes, with IDD6 ≤2 mA in Self Refresh.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density64 Mbit (4,194,304 words × 4 banks × 16 bits)
Interface StandardSSTL_2 - ensures signal integrity with 2.5 V logic levels and controlled impedance matching
Clock FrequencyUp to 200 MHz - enables 400 MT/s data rate per pin (DDR400)
CAS LatencyProgrammable CL = 2, 2.5, or 3 - determines minimum read access delay in clock cycles
Burst LengthConfigurable 2, 4, or 8 - defines number of consecutive data transfers per read/write command
Refresh Interval7.8 µs (8K rows/64 ms) - mandates periodic auto-refresh to retain data without external intervention
Supply Voltage2.5 V ±0.2 V - requires tight regulation; separate VDDQ/VSSQ rails reduce I/O noise coupling
Operating Temperature-40°C to +85°C - qualified for industrial-grade thermal environments without derating

Pinout & Package

W9425G6JB-5I TR uses a 60-ball TFBGA package (8 mm × 13 mm, 0.8 mm pitch) with lead-free, RoHS-compliant construction. Ball assignments follow JEDEC-standard DDR SDRAM layout with dedicated VDDQ/VSSQ planes and differential clock inputs.

Pin/TerminalCircuit RoleDesign Meaning
A0–A12Address InputMultiplexed row/column address; A10 controls single-bank vs. all-bank precharge
BA0, BA1Bank SelectSelects one of four internal banks during activate/read/write commands
DQ0–DQ15Data I/O16-bit bidirectional data bus synchronized to both edges of DQS
LDQS, UDQSData StrobeLower/upper byte strobes; edge-aligned on read, center-aligned on write
LDM, UDMData MaskByte-level write masking: LDM for DQ0–DQ7, UDM for DQ8–DQ15
CLK, CLKDifferential ClockTiming reference sampled at crossing point; defines all command/data edges
CKEClock EnableControls entry/exit from Power Down, Suspend, and Self Refresh modes
CS, RAS, CAS, WECommand InputsDecode bank activate, precharge, read, write, refresh, and mode register operations
VREFInput ReferenceStabilized 1.25 V reference for SSTL_2 input threshold; must remain active in Self Refresh
VDD, VSSCore Power/Ground2.5 V logic supply and return; decoupling critical for DLL stability
VDDQ, VSSQI/O Power/GroundSeparated 2.5 V rail for output drivers to isolate switching noise from core logic

Key Features

FeatureDesign Value
Double Data Rate ArchitectureTwo data transfers per clock cycle (rising/falling CLK edges) doubles bandwidth without increasing clock frequency
Programmable Mode RegisterEnables runtime configuration of burst length, CAS latency, and DLL reset - eliminating hardware redesign for timing tuning
Auto & Self Refresh ModesAuto Refresh maintains data during active operation; Self Refresh retains data with CKE low and no clock - enabling system sleep states
Write Data Mask (DM)LDM/UDM pins allow per-byte suppression of write data - essential for partial-word updates without read-modify-write overhead
Power Down OptimizationPrecharged and Active Power Down reduce IDD to <2 mA; enables dynamic power gating in battery-sensitive applications
Differential Clock InterfaceCLK/CLK inputs reject common-mode noise and improve jitter tolerance - critical for stable timing at 200 MHz

Applications

Industrial HMI PanelsMedical Imaging Controllers

Use Scenario: Touchscreen-based diagnostic displays requiring persistent frame buffer storage across thermal cycling and long uptime.

IC Role / Device Role / Timing Role: Main memory buffer for GPU-rendered UI layers, interfacing via DDR controller with CL=2.5 timing.

Use Value: -40°C to +85°C rating ensures reliable boot and display initialization in uncontrolled ambient environments.

Use Scenario: Portable ultrasound units needing low-power memory retention during standby between imaging sessions.

IC Role / Device Role / Timing Role: Frame store for real-time B-mode scan data, leveraging Self Refresh mode to suspend DDR clock while preserving image buffers.

Use Value: IDD6 ≤2 mA in Self Refresh extends battery life without compromising data integrity between acquisitions.

Network Edge RoutersAutomated Test Equipment (ATE)

Use Scenario: Packet buffering in fanless Layer 3 switches deployed in telecom cabinets with limited airflow.

IC Role / Device Role / Timing Role: Shared packet memory for ingress/egress queues, accessed concurrently by multiple DMA engines.

Use Value: 4-bank architecture enables interleaved reads/writes to hide tRCD/tRP delays - sustaining >300 MB/s sustained throughput.

Use Scenario: High-speed digital pattern memory in boundary-scan testers requiring deterministic read latency.

IC Role / Device Role / Timing Role: Vector storage for JTAG stimulus/response sequences, configured with fixed CL=2 and BL=4 for minimal jitter.

Use Value: DLL lock and precise tCK (7.5 ns min) ensure sub-nanosecond setup/hold margins at 200 MHz operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT46V32M16P-5B:JSame density (64 Mbit), 2.5 V, DDR400, but rated 0°C to +70°C only; tRAS = 45 ns (vs. 40 ns)Not suitable for extended temperature industrial use; requires thermal derating above 70°CSelect only if operating environment stays within commercial temperature range and board layout accommodates slightly longer tRAS
IS42S16320F-5BLIIdentical 64 Mbit ×16, -40°C to +85°C, same 60-ball TFBGA, but supports CL=2.5/3 only (no CL=2)Cannot match lowest-latency CL=2 operation; may require firmware adjustment for timing-critical boot codeValid drop-in replacement where CL=2 is unused; verify MRS initialization sequence matches Winbond's EMRS requirements

Compared with MT46V32M16P-5B:J and IS42S16320F-5BLI, W9425G6JB-5I TR uniquely combines industrial temperature range, CL=2 support, and 40 ns tRAS - making it optimal for latency-constrained embedded systems where thermal margin and timing headroom are non-negotiable.

Availability

W9425G6JB-5I TR is available at Aetrix Electronics and suitable for industrial HMI panels, medical imaging controllers, and network edge routers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W9425G6JB-5I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and computing markets.

W9425G6JB-5I TR belongs to Winbond's legacy DDR SDRAM product line, engineered specifically for cost-sensitive, thermally demanding embedded applications where DDR400 performance and industrial qualification are required without migrating to DDR2 or DDR3.

FAQ

What is the maximum clock frequency supported by W9425G6JB-5I TR?

W9425G6JB-5I TR supports a maximum clock frequency of 200 MHz, corresponding to DDR400 data rates (400 MT/s). This is validated under industrial temperature conditions (-40°C to +85°C) with CL=2.5 and CL=3; CL=2 operation is guaranteed down to 7.5 ns tCK (133 MHz equivalent base clock).

Does W9425G6JB-5I TR require external termination resistors for SSTL_2 signaling?

No, W9425G6JB-5I TR integrates on-die termination (ODT) for DQ/DQS lines, eliminating need for external 25 Ω or 50 Ω resistors. VREF must be supplied at 1.25 V ±1% to enable proper SSTL_2 input threshold referencing - critical for signal integrity at 200 MHz.

How many auto-refresh commands must be issued per 64 ms for W9425G6JB-5I TR?

W9425G6JB-5I TR requires 8,192 auto-refresh cycles every 64 ms, resulting in one command every 7.8 µs. The device allows up to eight pending auto-refresh commands; exceeding this queue depth risks data retention failure. The internal refresh counter handles address generation - no external address control needed.

Can W9425G6JB-5I TR operate in Self Refresh mode without an external clock?

Yes, W9425G6JB-5I TR enters Self Refresh mode when CKE is driven low while all banks are idle. In this state, the DLL disables automatically, and the internal oscillator sustains refresh - allowing full system clock shutdown. VREF must remain stable at 1.25 V, and exit requires 200 NOP cycles before issuing further commands.

What is the function of A10 during Bank Precharge versus Precharge All commands on W9425G6JB-5I TR?

On W9425G6JB-5I TR, A10 determines scope: when A10 = Low during Bank Precharge, only the bank selected by BA0/BA1 is precharged; when A10 = High during Precharge All, all four banks transition to idle simultaneously - regardless of BA0/BA1 state. This dual-role design simplifies command encoding while maintaining bank-level control granularity.

W9425G6JB-5I TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
60-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR
Memory Size:
256Mbit
Memory Organization:
16M x 16
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
55 ns
Voltage - Supply:
2.3V ~ 2.7V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
60-TFBGA (8x13)

W9425G6JB-5I TR FAQ

1.How can I place an order for W9425G6JB-5I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W9425G6JB-5I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9425G6JB-5I TR reliable?

The price and inventory of W9425G6JB-5I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9425G6JB-5I TR is usually 5 days.

3.What payment methods are accepted for W9425G6JB-5I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9425G6JB-5I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9425G6JB-5I TR?

W9425G6JB-5I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9425G6JB-5I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9425G6JB-5I TR?

For technical support, including W9425G6JB-5I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9425G6JB-5I TR requirements.

6.How does Aetrix verify that W9425G6JB-5I TR is sourced from the original manufacturer or authorized distributors?

All W9425G6JB-5I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9425G6JB-5I TR meets industry standards.

7.What is the process for return or replacement of W9425G6JB-5I TR?

All W9425G6JB-5I TR units undergo pre-shipment inspection (PSI). If there is an issue with W9425G6JB-5I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9425G6JB-5I TR part is unused and in its original packaging.

Return procedure for W9425G6JB-5I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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