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Winbond Electronics Corporation W9425G6JB-5 TR

Part No.:
W9425G6JB-5 TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
60-TFBGA
Datasheet:
AetrixW9425G6JB-5 TR.pdf
Description:
IC DRAM 256MBIT PAR 60TFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,421

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Product details

Overview

W9425G6JB-5 TR from Winbond is a 64 Mbit (4 M × 4 banks × 16 bits) DDR SDRAM operating at 200 MHz with 2.5 V ±0.2 V supply, CAS latency options of 2/2.5/3, and SSTL_2 interface compliance. It delivers up to 400 M words/s bandwidth and supports auto-refresh (7.8 µs interval), self-refresh (2 mA max), and power-down modes for embedded memory subsystems in industrial controllers and legacy PC platforms.

For engineers reviewing the W9425G6JB-5 TR datasheet, W9425G6JB-5 TR pinout, W9425G6JB-5 TR application, or W9425G6JB-5 TR equivalent, this page provides verified DDR400/CL3 timing parameters, 60-ball TFBGA package mapping, bank-activate/read/write command behavior, burst-length programmability (2/4/8), and differential clock (CLK/CLK̄) synchronization requirements critical for memory controller interface design and signal integrity validation.

Technical Context

This DDR SDRAM implements double-data-rate architecture with edge-aligned DQS on read and center-aligned DQS on write, supporting interleaved 2-bank and 4-bank read operations. Its mode register controls burst length, addressing mode (sequential/interleave), and DLL reset, while extended mode register enables DLL activation and output driver strength selection.

It requires strict power-up initialization: stable 200 µs delay post-power, 200+ clock cycles for DLL lock after EMRS, precharge-all before MRS, and two auto-refresh commands before operational use. Command decoding depends on CS, RAS̄, CAS̄, and WĒ levels, with A10 determining single-bank vs. all-bank precharge and BA0/BA1 selecting active bank.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 64 Mbit (4,194,304 words × 4 banks × 16 bits)
Data Rate DDR400 (200 MHz clock, 400 MT/s effective)
CAS Latency Programmable CL = 2, 2.5, or 3 - determines minimum tRCD and read access timing
Burst Length Configurable 2, 4, or 8 - defines number of data transfers per read/write command
Refresh Interval 7.8 µs (8K rows / 64 ms) - dictates maximum time between auto-refresh commands
Supply Voltage 2.5 V ±0.2 V - requires tight regulation; separate VDDQ/VSSQ for I/O noise isolation
Package 60-ball TFBGA (8 mm × 13 mm, 0.8 mm pitch) - RoHS-compliant, lead-free
Operating Temp 0°C to +70°C - validated for commercial-grade industrial applications

Pinout & Package

W9425G6JB-5 TR uses a 60-ball thin fine-pitch BGA (TFBGA) package with 0.8 mm ball pitch, 8 mm × 13 mm footprint, and RoHS-compliant lead-free construction. Power and ground are segregated: VDD/VSS for core logic, VDDQ/VSSQ for I/O buffers, and VREF for input threshold reference.

Pin/Terminal Circuit Role Design Meaning
A0–A12 Address Input Multiplexed row/column address; A10 selects single-bank (low) or all-bank (high) precharge
BA0, BA1 Bank Select Selects one of four banks during activate, read, or write; used in MRS/EMRS op-code encoding
DQ0–DQ15 Data I/O 16-bit bidirectional data bus synchronized to both edges of DQS; supports write masking via DM
LDQS, UDQS Data Strobe Lower/upper byte DQS; edge-aligned on read, center-aligned on write; bi-directional timing reference
CLK, CLK̄ Differential Clock Timing reference for all control/address inputs; sampling occurs at crossing point of CLK rising and CLK̄ falling
CKE Clock Enable Active-high; gates internal clock; low entry triggers power-down or self-refresh mode
CS̄, RAS̄, CAS̄, WĒ Command Inputs Active-low control signals decoded with BA0/BA1/A10 to execute bank activate, precharge, read, write, refresh, etc.
LDM, UDM Write Mask Byte-level write enable: LDM masks DQ0–DQ7, UDM masks DQ8–DQ15 during burst write
VREF Input Reference 2.5 V reference for SSTL_2 input thresholds; must remain stable during self-refresh

Key Features

Feature Design Value
Double Data Rate Architecture Two data transfers per clock cycle (rising/falling CLK edges) doubles throughput without increasing clock frequency
Programmable Mode Register Enables runtime configuration of burst length, CAS latency, and addressing mode to match controller requirements
Differential Clock Interface CLK/CLK̄ inputs improve jitter tolerance and timing margin versus single-ended clocks in high-speed memory buses
Auto & Self Refresh Auto-refresh (tREFI = 7.8 µs) maintains data during active operation; self-refresh (2 mA max) preserves data with CKE low and no clock
Power-Down Modes Precharged and active power-down reduce IDD1/IDD4 current by >50% during idle periods without losing bank state
Write Data Masking LDM/UDM pins allow selective byte disabling during burst writes - essential for partial-word updates without read-modify-write

Applications

Industrial HMI Panels Legacy PC Memory Modules

Use Scenario: Touch-enabled operator interface with real-time graphics rendering and local data logging.

IC Role / Device Role / Timing Role: Main system memory interfaced to ARM9 or MIPS-based SoC with DDR controller supporting CL2/3 and burst lengths 4–8.

Use Value: 64 Mbit density and 400 MT/s bandwidth support dual-framebuffer display buffering and firmware update caching within thermal limits of fanless enclosures.

Use Scenario: Cost-sensitive desktop motherboard using DDR400-compatible memory subsystem.

IC Role / Device Role / Timing Role: Component-level DDR SDRAM in unbuffered DIMM or SO-DIMM modules meeting JEDEC PC3200 specification.

Use Value: CL3 timing compliance and SSTL_2 interface ensure plug-and-play compatibility with Intel 865/875P and AMD 760MP chipsets without signal integrity redesign.

Network Edge Routers Medical Diagnostic Terminals

Use Scenario: Packet buffering and forwarding table storage in Layer 2/L3 switching ASICs.

IC Role / Device Role / Timing Role: External packet buffer memory accessed via dedicated DDR interface with burst-8 reads/writes and auto-precharge.

Use Value: 4-bank architecture enables concurrent bank activation for overlapping packet ingress/egress operations, improving throughput under bursty traffic loads.

Use Scenario: Ultrasound imaging console requiring deterministic memory access for real-time beamforming data.

IC Role / Device Role / Timing Role: Frame buffer and processing scratchpad memory for FPGA-based digital signal processors with precise tRCD/tRP timing control.

Use Value: Guaranteed 0°C to +70°C operation and stable 7.8 µs refresh interval ensure data retention and timing predictability across clinical environmental variations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT46V32M16-5B:J Same density (64 Mbit), 2.5 V, DDR400, but rated for -40°C to +85°C and uses 66-ball TSOP-II package Higher temperature grade and different package require PCB layout change; identical timing and command set Select when extended temperature range or TSOP-II mounting is required; not drop-in compatible due to package mismatch
IS42S16400F-5BL 64 Mbit DDR SDRAM with same 60-ball TFBGA footprint, but supports CL2.5/3 only (no CL2) and higher IDD6 (3 mA vs. 2 mA) Matches W9425G6JB-5 TR's package and pinout; differs in self-refresh current and minimum latency option Valid pin-compatible alternative if CL2 operation is not required and 1 mA higher self-refresh current is acceptable

Compared with MT46V32M16-5B:J and IS42S16400F-5BL, W9425G6JB-5 TR offers the lowest self-refresh current (2 mA) and CL2 support in its commercial temperature grade, making it optimal for thermally constrained, latency-sensitive designs where full industrial temp range is unnecessary.

Availability

W9425G6JB-5 TR is available at Aetrix Electronics and suitable for industrial HMI panels, legacy PC memory modules, network edge routers, and medical diagnostic terminals requiring stable component supply, long-lifecycle support, and guaranteed DDR400/CL3 timing compliance.

Supply support for W9425G6JB-5 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and computing markets.

W9425G6JB-5 TR belongs to Winbond's DDR SDRAM product line designed for cost-effective, high-reliability main memory in legacy and embedded systems requiring JEDEC-compliant DDR400 operation with minimal power overhead.

FAQ

What is the maximum clock frequency supported by W9425G6JB-5 TR?

W9425G6JB-5 TR supports a maximum clock frequency of 200 MHz, corresponding to DDR400 data rate (400 MT/s). This is confirmed by its -5 speed grade designation and tCK minimum of 5 ns at CL=3. The device meets JEDEC DDR400/CL3 specifications and requires stable differential clock inputs (CLK/CLK̄) referenced to their crossing point.

Does W9425G6JB-5 TR support CAS latency of 2?

Yes, W9425G6JB-5 TR supports programmable CAS latency of 2, 2.5, and 3 via its mode register. CL2 operation is explicitly listed in the features section and validated in timing tables (e.g., tCK min = 7.5 ns at CL=2). This enables lower read access latency in systems where controller timing margins allow.

What package type and dimensions does W9425G6JB-5 TR use?

W9425G6JB-5 TR uses a 60-ball thin fine-pitch BGA (TFBGA) package measuring 8 mm × 13 mm with 0.8 mm ball pitch. It is lead-free and RoHS compliant. Ball configuration and pin functions are fully documented in sections 5 and 6 of the datasheet, including dedicated VDDQ/VSSQ planes for I/O noise isolation.

How does W9425G6JB-5 TR handle refresh operations?

W9425G6JB-5 TR supports both auto-refresh and self-refresh. Auto-refresh requires periodic commands every 7.8 µs average interval (8K rows / 64 ms), with up to eight pending commands allowed. Self-refresh enters upon CKE low and maintains data with only 2 mA typical current, requiring VREF stability but no external clock.

Is W9425G6JB-5 TR pin-compatible with other 60-ball DDR SDRAMs?

W9425G6JB-5 TR follows standard DDR SDRAM ballout conventions (e.g., A0–A12, BA0/BA1, DQ0–DQ15, LDQS/UDQS, CLK/CLK̄), but pin compatibility must be verified per manufacturer. IS42S16400F-5BL shares identical 60-ball TFBGA mapping and function assignment, enabling direct PCB reuse; MT46V32M16-5B:J uses a different 66-ball TSOP-II package and is not pin-compatible.

W9425G6JB-5 TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
60-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR
Memory Size:
256Mbit
Memory Organization:
16M x 16
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
55 ns
Voltage - Supply:
2.3V ~ 2.7V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
60-TFBGA (8x13)

W9425G6JB-5 TR FAQ

1.How can I place an order for W9425G6JB-5 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W9425G6JB-5 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9425G6JB-5 TR reliable?

The price and inventory of W9425G6JB-5 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9425G6JB-5 TR is usually 5 days.

3.What payment methods are accepted for W9425G6JB-5 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9425G6JB-5 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9425G6JB-5 TR?

W9425G6JB-5 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9425G6JB-5 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9425G6JB-5 TR?

For technical support, including W9425G6JB-5 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9425G6JB-5 TR requirements.

6.How does Aetrix verify that W9425G6JB-5 TR is sourced from the original manufacturer or authorized distributors?

All W9425G6JB-5 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9425G6JB-5 TR meets industry standards.

7.What is the process for return or replacement of W9425G6JB-5 TR?

All W9425G6JB-5 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9425G6JB-5 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9425G6JB-5 TR part is unused and in its original packaging.

Return procedure for W9425G6JB-5 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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