Winbond Electronics Corporation W9425G6KH-4

Overview

W9425G6KH-4 from Winbond Electronics is a 4 M × 4 banks × 16-bit DDR SDRAM operating at 200 MHz with 2.5 V ± 0.2 V supply, CAS latency options of 2/2.5/3, and SSTL_2 interface - used as main memory in embedded computing and industrial control systems requiring DDR400-compliant bandwidth.

For engineers reviewing the W9425G6KH-4 datasheet, W9425G6KH-4 pinout, W9425G6KH-4 application, or W9425G6KH-4 equivalent, this page delivers verified timing parameters (tCK min 5 ns at CL=3), power specs (IDD6 ≤ 2 mA self-refresh), bank architecture (4-bank interleaving), burst support (BL=2/4/8), and differential clocking (CLK/CLK̅) critical for DDR interface validation and PCB layout.

Technical Context

This DDR SDRAM implements double-data-rate architecture synchronized to both edges of DQS for read/write operations, with programmable mode registers controlling burst length, CAS latency, and DLL reset. It supports auto-refresh (7.8 µs interval) and self-refresh (2 mA max) for data retention during low-power states.

Command decoding relies on RAS/CAS/WE with chip select (CS) enabling/disabling the decoder; bank activation uses BA0/BA1 and row address A0–A12, while column access uses A0–A8 and A10 as auto-precharge bit. DQS is edge-aligned on read and center-aligned on write, and DM masking operates per-byte via LDM/UDM.

Key Specifications

Pinout & Package

W9425G6KH-4 is packaged in a RoHS-compliant, lead-free TSOP II 66-pin package with separate VDD/VDDQ and VSS/VSSQ rails for logic and I/O noise isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Compared with MT46V32M16-5B:J and IS42S16160F-6BLI, W9425G6KH-4 offers identical 66-pin TSOP II compatibility and CL=3 timing at 200 MHz, but provides dual-grade availability (commercial and industrial) and relaxed 2.5 V ± 0.2 V supply tolerance - simplifying power design and enabling reuse across temperature variants.

Availability

W9425G6KH-4 is available at Aetrix Electronics and suitable for industrial PLC memory, medical imaging buffers, network edge router cache, and automotive ADAS preprocessing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W9425G6KH-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and networking markets.

The W9425G6KH-4 belongs to Winbond's DDR SDRAM product line designed for cost-sensitive, space-constrained embedded systems needing JEDEC-compliant DDR400 performance with robust thermal and power characteristics.

FAQ

What is the maximum supported clock frequency for W9425G6KH-4?

The W9425G6KH-4 supports a maximum clock frequency of 200 MHz, corresponding to a minimum clock cycle time (tCK) of 5 ns at CAS latency 3. This frequency enables DDR400 data rates (400 MT/s) and is validated across the full commercial temperature range (0°C to 70°C). The device maintains timing compliance under specified VDD (2.5 V ± 0.2 V) and signal integrity conditions per JEDEC standard.

Does W9425G6KH-4 support self-refresh mode, and what is its current draw?

Yes, W9425G6KH-4 supports self-refresh mode with a maximum current draw of 2 mA, as specified in the datasheet under IDD6 parameter. This low-current retention mode allows the device to maintain stored data without external clocking or command activity, making it suitable for battery-backed or low-power standby applications. The DLL is automatically disabled on entry and re-enabled on exit, requiring a 200-cycle stabilization period before issuing read commands.

What package type and pin count does W9425G6KH-4 use?

W9425G6KH-4 uses a lead-free, RoHS-compliant TSOP II package with 66 pins. This package features separate VDD/VDDQ and VSS/VSSQ power/ground rails to isolate core logic from I/O noise, and is optimized for surface-mount assembly in space-constrained embedded designs. Pin configuration includes 16 data lines (DQ0–DQ15), dual data strobes (LDQS/UDQS), and dedicated write masks (LDM/UDM).

How many banks and what memory organization does W9425G6KH-4 implement?

W9425G6KH-4 implements 4 independent memory banks organized as 4,194,304 words × 4 banks × 16 bits, yielding a total capacity of 128 Mbit. This 4-bank architecture enables interleaved operation - allowing one bank to be precharged while another is active - which reduces effective access latency and sustains high bandwidth during burst-intensive workloads typical in imaging and networking applications.

What are the supported burst lengths and CAS latency settings for W9425G6KH-4?

W9425G6KH-4 supports burst lengths of 2, 4, and 8, and CAS latency settings of 2, 2.5, and 3 - all programmable via the mode register during initialization. These settings are selected based on system timing constraints and performance requirements; for example, CL=2 minimizes read latency in real-time control loops, while BL=8 maximizes throughput in frame-buffering scenarios. The mode register must be configured after power-up and before any read/write operations.