Winbond Electronics Corporation W9425G6KH-5

Overview

W9425G6KH-5 from Winbond is a 4 M × 4 banks × 16-bit DDR SDRAM operating at 200 MHz clock frequency with 2.5 V ± 0.2 V supply, CAS latency options of 2/2.5/3, and SSTL_2 interface-designed for main memory in embedded computing, industrial controllers, and legacy PC-compatible systems requiring DDR400/CL3 compliance.

For engineers reviewing the W9425G6KH-5 datasheet, W9425G6KH-5 pinout, W9425G6KH-5 application, or W9425G6KH-5 equivalent, this page delivers verified timing parameters (tCK min 5 ns), power specs (IDD6 ≤ 2 mA self-refresh), bank architecture (4-bank), burst control (BL=2/4/8), and differential clocking (CLK/CLK̅) critical for DDR interface validation and memory subsystem design.

Technical Context

This DDR SDRAM implements double-data-rate architecture synchronized to both edges of DQS for read/write operations, with programmable mode register controlling burst length, CAS latency, and DLL reset. It supports bank-interleaved reads across all four banks and uses differential CLK/CLK̅ inputs sampled at their crossing point.

Functional operation includes auto-refresh (7.8 µs interval, max 8 concurrent cycles), self-refresh (2 mA max at 0°C–70°C), and power-down modes (precharged/active) controlled via CKE. Write data masking is implemented per-byte via LDM/UDM signals aligned with DQS edges.

Key Specifications

Pinout & Package

W9425G6KH-5 is packaged in a RoHS-compliant, lead-free TSOP II 66-pin package with separate VDD/VDDQ and VSS/VSSQ rails for logic and I/O noise isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Compared with MT46V32M16-5B:J and IS42S16400F-5TL, W9425G6KH-5 offers tighter tRC (55 ns) and lower self-refresh current (2 mA), making it optimal for cost-sensitive, commercial-temperature embedded systems where timing headroom and standby power are prioritized over extended temperature support.

Availability

W9425G6KH-5 is available at Aetrix Electronics and suitable for industrial automation, legacy computing, and network infrastructure applications requiring stable component supply, long-lifecycle support, and DDR400/CL3-compliant memory performance.

Supply support for W9425G6KH-5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with global manufacturing and distribution infrastructure.

The W9425G6KH-5 belongs to Winbond's DDR SDRAM product line targeting cost-optimized, pin-compatible replacements for legacy DDR memory in industrial and embedded platforms requiring commercial-temperature operation and proven reliability.

FAQ

What is the maximum operating temperature range for W9425G6KH-5?

The W9425G6KH-5 is specified for operation from 0°C to +70°C (commercial temperature grade). This differs from the W9425G6KH-5I variant, which supports -40°C to +85°C. The datasheet confirms IDD6 (self-refresh current) is guaranteed ≤ 2 mA within this 0°C–70°C range, and all AC timing parameters-including tCK min = 5 ns at CL = 3-are validated across this span.

Does W9425G6KH-5 support DLL enable/disable via Extended Mode Register?

Yes, W9425G6KH-5 supports DLL enable/disable through the Extended Mode Register Set (EMRS) command, as documented in Section 8.2.9 of its datasheet. The EMRS command (BA0=H, BA1=L) configures DLL activation and output driver strength. DLL must be enabled during initialization before issuing the first read command, and a DLL reset (via MRS with A8=H) is required after power-up or self-refresh exit.

What is the function of A10 during precharge commands on W9425G6KH-5?

On W9425G6KH-5, A10 determines precharge scope: when A10 = LOW during a Bank Precharge command, only the bank selected by BA0/BA1 is precharged; when A10 = HIGH during a Precharge All command, all four banks transition to idle state simultaneously. This behavior is explicitly defined in Section 6 (Pin Description) and Section 8.2.2–8.2.3 of the datasheet.

Can W9425G6KH-5 operate with CAS Latency 2.5, and how is it programmed?

Yes, W9425G6KH-5 supports CAS Latency 2.5, programmed via bits A6–A4 in the Mode Register Set (MRS) command. As shown in Table 8.10.3, encoding A6A5A4 = 010 selects CL = 2.5. This setting is valid at 200 MHz (tCK = 5 ns min) and affects read data valid window timing-requiring controller alignment to ensure tAC compliance across voltage and temperature.

How does write data masking work on W9425G6KH-5, and which pins control it?

W9425G6KH-5 implements byte-level write masking using LDM (pins 20, 47) for DQ0–DQ7 and UDM (pins 43, 50) for DQ8–DQ15. When asserted HIGH during a burst write, each mask signal disables corresponding data bytes. Both LDM and UDM are sampled synchronously with DQS edges, as confirmed in Section 6 (Pin Description) and Section 8.2.16 of the W9425G6KH-5 datasheet.