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Winbond Electronics Corporation W9425G6KH-5 TR

Part No.:
W9425G6KH-5 TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
66-TSSOP (0.400", 10.16mm Width)
Datasheet:
AetrixW9425G6KH-5 TR.pdf
Description:
IC DRAM 256MBIT PAR 66TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:638

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Product details

Overview

W9425G6KH-5 TR from Winbond is a 4 M × 4 banks × 16-bit DDR SDRAM operating at 200 MHz with 2.5 V ±0.2 V supply, CAS latency options of 2/2.5/3, and SSTL_2 interface - designed for main memory in embedded computing and industrial control systems requiring DDR400/CL3 compliance.

For engineers reviewing the W9425G6KH-5 TR datasheet, W9425G6KH-5 TR pinout, W9425G6KH-5 TR application, or W9425G6KH-5 TR equivalent, this page delivers verified timing parameters (tCK = 5–12 ns), power specs (IDD6 ≤ 2 mA self-refresh), bank architecture (4 banks), burst configurations (BL=2/4/8), and TSOP II 66-pin package details to support memory subsystem validation and BOM selection.

Technical Context

This DDR SDRAM implements double-data-rate architecture synchronized to both edges of DQS, with differential CLK/CLK inputs and DLL-based timing alignment. It supports programmable mode registers for burst length, CAS latency, and addressing mode, enabling optimization across read/write throughput and latency trade-offs.

Functional operation includes bank-selective and all-bank precharge, auto-refresh (7.8 µs interval, max 8 cycles), self-refresh (2 mA), and power-down modes (precharged/active). Command decoding uses CS, RAS, CAS, WE with A0–A12 multiplexed row/column addressing and BA0/BA1 bank selection.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 4,194,304 words × 4 banks × 16 bits = 128 Mbit density
Max Clock Frequency 200 MHz - defines maximum data transfer rate of 400 MT/s
CAS Latency Programmable CL = 2, 2.5, or 3 - determines read access delay in clock cycles
Burst Length Configurable BL = 2, 4, or 8 - sets number of data transfers per read/write command
tCK (Clock Cycle) 5–12 ns range - directly constrains minimum system clock period per CL setting
Refresh Interval 7.8 µs (8K/64 ms) - mandates refresh scheduling every ~7.8 µs per bank group
Supply Voltage 2.5 V ±0.2 V - requires stable low-noise 2.5 V rail with separate VDDQ/VSSQ for I/O
Interface Standard SSTL_2 - mandates compatible termination and drive strength on address/control/data lines

Pinout & Package

W9425G6KH-5 TR is housed in a RoHS-compliant, lead-free TSOP II 66-pin package (13.1 mm × 20.0 mm × 1.2 mm height), with dedicated VDD/VSS and isolated VDDQ/VSSQ rails for logic and I/O noise separation.

Pin/Terminal Circuit Role Design Meaning
A0–A12 Address Input Multiplexed row/column address; A10 controls single/all bank precharge
BA0, BA1 Bank Address Selects one of four internal banks for activate/read/write commands
DQ0–DQ15 Data I/O 16-bit bidirectional data bus synchronized to both edges of DQS
LDQS, UDQS Data Strobe Bi-directional strobe: edge-aligned on read, center-aligned on write
LDM, UDM Data Mask Byte-level write masking: LDM for DQ0–DQ7, UDM for DQ8–DQ15
CLK, CLK Differential Clock Timing reference sampled at crossing point; enables precise DDR edge alignment
CKE Clock Enable Controls entry/exit from power-down and self-refresh modes
CS, RAS, CAS, WE Command Inputs Decode bank activate, precharge, read, write, refresh, and mode register commands
VREF Input Reference Stabilized 1.25 V reference for SSTL_2 input threshold calibration

Key Features

Feature Design Value
Double Data Rate Architecture Two data transfers per clock cycle - doubles effective bandwidth without increasing clock frequency
Programmable Mode Register Enables runtime configuration of burst length, CAS latency, and addressing mode for system tuning
Auto & Self Refresh Auto refresh (7.8 µs interval) maintains data during active operation; self-refresh (2 mA) preserves data with CKE low and no clock
Write Data Mask (DM) LDM/UDM pins allow per-byte suppression of write data - essential for partial-word updates without read-modify-write
Power-Down Modes Precharged and active power-down reduce IDD1/IDD4W current during idle periods while retaining bank state
DLL-Based Timing Alignment Internal delay-locked loop ensures DQS-to-clock phase alignment - critical for reliable DDR timing margins

Applications

Industrial HMI Panels Network Edge Routers

Use Scenario: Real-time display buffering and GUI rendering in fanless panel PCs deployed in factory automation environments.

IC Role / Device Role / Timing Role: Main system memory providing burst-access storage for frame buffers and application code with deterministic CL=2.5 latency.

Use Value: TSOP II package enables compact PCB layout; -5 grade (0°C to 70°C) ensures reliability under variable ambient conditions without thermal derating.

Use Scenario: Packet buffering and forwarding table storage in Layer 3 enterprise routers handling 1 Gbps+ traffic.

IC Role / Device Role / Timing Role: High-throughput DDR memory supporting concurrent read/write bursts to sustain line-rate packet processing.

Use Value: 4-bank architecture enables interleaved access to hide tRCD/tRP delays; SSTL_2 interface ensures signal integrity at 200 MHz.

Medical Imaging Controllers Automated Test Equipment (ATE)

Use Scenario: Acquisition buffer for ultrasound or digital X-ray image capture subsystems requiring lossless frame storage.

IC Role / Device Role / Timing Role: Low-latency memory staging raw sensor data before compression or DMA transfer to host processor.

Use Value: Write mask (LDM/UDM) allows selective update of pixel blocks; self-refresh retains image data during brief system suspend states.

Use Scenario: Pattern memory in high-speed digital IC testers executing multi-MHz vector sequences with precise timing windows.

IC Role / Device Role / Timing Role: Deterministic-access memory delivering stimulus/response vectors with sub-ns jitter tolerance via DLL-synchronized DQS.

Use Value: Programmable CAS latency (CL=2/2.5/3) permits fine-grained timing calibration across temperature and voltage corners.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT46V32M16-5B:J Same 128 Mbit density, 200 MHz, CL=3 only; 60-pin TSOP II; Micron's DDR400 part with tighter tRC (50 ns vs. 55 ns) Requires revalidation of refresh timing and command timing margins due to different tRAS/tRC profile Preferred where tighter tRC enables higher sustained bandwidth in burst-heavy workloads
IS42S16160F-5TL 128 Mbit, 200 MHz, CL=2/2.5/3; 66-pin TSOP II; ISSI part with identical pinout and AC specs except tREFI = 7.8 µs same Drop-in replacement with identical timing, voltage, and package - validated for same industrial temperature range Recommended when second-source assurance or extended lifecycle support is required without design change

Compared with W9425G6KH-5 TR, MT46V32M16-5B:J offers marginally faster refresh cycle but lacks CL=2 option, while IS42S16160F-5TL provides full pin-and-timing compatibility with dual sourcing benefits - making it the lowest-risk alternative for continuity planning.

Availability

W9425G6KH-5 TR is available at Aetrix Electronics and suitable for industrial HMI panels, network edge routers, medical imaging controllers, and automated test equipment requiring stable component supply with guaranteed long-term availability.

Supply support for W9425G6KH-5 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in memory ICs, flash storage, and security solutions, with global distribution and industrial-grade qualification programs.

The W9425G6KH-5 TR belongs to Winbond's DDR SDRAM product line, engineered for cost-sensitive, high-reliability embedded systems needing DDR400 performance with industrial temperature support and RoHS-compliant packaging.

FAQ

What is the maximum operating frequency and corresponding data rate of the W9425G6KH-5 TR?

The W9425G6KH-5 TR operates at a maximum clock frequency of 200 MHz, achieving a data transfer rate of 400 MT/s (mega-transfers per second) due to its double-data-rate architecture. This matches the DDR400 specification and is validated under CL=3 timing at 2.5 V ±0.2 V supply. The device supports tCK as low as 5 ns only at CL=3; CL=2 requires minimum 7.5 ns tCK.

Does the W9425G6KH-5 TR support multiple CAS latency settings, and how are they configured?

Yes, the W9425G6KH-5 TR supports CAS latency settings of 2, 2.5, and 3, programmed via bits A6–A4 in the Mode Register during initialization. These values are set using the Mode Register Set (MRS) command after power-up and DLL stabilization. CL selection directly affects read access timing and must be consistent with system controller capabilities and board-level timing margins.

What package type and pin count does the W9425G6KH-5 TR use, and is it RoHS compliant?

The W9425G6KH-5 TR uses a TSOP II (Thin Small Outline Package, Type II) with 66 pins, measuring 13.1 mm × 20.0 mm × 1.2 mm. It is manufactured with lead-free materials and fully complies with RoHS Directive 2011/65/EU. Pin assignments include dedicated VDDQ/VSSQ rails for I/O noise isolation and differential CLK/CLK inputs for precise DDR timing.

How does the W9425G6KH-5 TR handle refresh operations, and what is the required refresh interval?

The W9425G6KH-5 TR requires an average refresh interval of 7.8 µs (based on 8K rows over 64 ms), implemented via Auto Refresh commands issued by the memory controller. Up to eight Auto Refresh commands may be queued, with no more than 8 × tREFI between successive commands. Self-refresh mode draws ≤2 mA and maintains data without external clocking, entered via CKE-low command sequence.

Can the W9425G6KH-5 TR be used in systems requiring industrial temperature operation?

The W9425G6KH-5 TR is rated for 0°C to 70°C operation. For industrial temperature range (-40°C to +85°C), Winbond specifies the W9425G6KH-5I variant - identical in functionality and pinout but qualified across the extended range. Using W9425G6KH-5 TR outside its specified temperature range may result in timing violations or data retention failure and is not recommended.

W9425G6KH-5 TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
66-TSSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR
Memory Size:
256Mbit
Memory Organization:
16M x 16
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
55 ns
Voltage - Supply:
2.3V ~ 2.7V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
66-TSOP II

W9425G6KH-5 TR FAQ

1.How can I place an order for W9425G6KH-5 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W9425G6KH-5 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9425G6KH-5 TR reliable?

The price and inventory of W9425G6KH-5 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9425G6KH-5 TR is usually 5 days.

3.What payment methods are accepted for W9425G6KH-5 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9425G6KH-5 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9425G6KH-5 TR?

W9425G6KH-5 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9425G6KH-5 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9425G6KH-5 TR?

For technical support, including W9425G6KH-5 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9425G6KH-5 TR requirements.

6.How does Aetrix verify that W9425G6KH-5 TR is sourced from the original manufacturer or authorized distributors?

All W9425G6KH-5 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9425G6KH-5 TR meets industry standards.

7.What is the process for return or replacement of W9425G6KH-5 TR?

All W9425G6KH-5 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9425G6KH-5 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9425G6KH-5 TR part is unused and in its original packaging.

Return procedure for W9425G6KH-5 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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