Winbond Electronics Corporation W9464G6JH-4

Overview

W9464G6JH-4 from Winbond Electronics is a 1M × 4 banks × 16-bit DDR SDRAM operating at 250 MHz with 2.4–2.7 V supply, CL2–CL4 latency, and SSTL_2 interface - designed for high-bandwidth memory subsystems in embedded controllers and industrial computing platforms requiring DDR500/CL3–CL4 compliance.

For engineers reviewing the W9464G6JH-4 datasheet, W9464G6JH-4 pinout, W9464G6JH-4 application, or W9464G6JH-4 equivalent, this page delivers verified timing parameters (tCK = 4 ns min at CL3), bank architecture (4-bank interleaving), power-down modes (Precharge/Active Power Down), refresh behavior (4K/64 ms), and TSOP II package constraints critical for PCB layout and signal integrity validation.

Technical Context

This DDR SDRAM implements double-data-rate architecture synchronized to both edges of DQS, with differential CLK/CLK inputs referenced at crossing point. It supports programmable burst lengths (2/4/8), CAS latencies (2, 2.5, 3, 4), and addressing modes (sequential/interleave) via Mode Register Set (MRS) and Extended Mode Register Set (EMRS) commands.

Functional operation requires DLL enable/disable sequencing during initialization, strict tRAS ≥ 40 ns and tRC ≥ 55 ns timing between activate/precharge/refresh commands, and separate VDDQ/VSSQ rails for I/O noise isolation. Write masking uses LDM/UDM per-byte control aligned to DQS edges, and self-refresh mode maintains data with CKE low while disabling DLL.

Key Specifications

Pinout & Package

W9464G6JH-4 is housed in a 66-pin TSOP II (400 mil) package with lead-free, RoHS-compliant construction. Pin assignments follow JEDEC-standard DDR SDRAM layout with dedicated VDDQ/VSSQ rails for I/O noise isolation and NC pins at positions 14, 17, 19, 25, 42, 43, 50, 53.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Compared with MT46V32M16-4F and IS42S16320B-6BL, W9464G6JH-4 uniquely supports DDR500 operation (250 MHz), CL2.5/CL4 latency tuning, and full 4-bank interleaving - making it the only option among the three qualified for high-throughput embedded DDR500 implementations requiring thermal robustness and flexible timing configuration.

Availability

W9464G6JH-4 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, network edge router packet buffers, and automotive ADAS preprocessing caches requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W9464G6JH-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W9464G6JH series belongs to Winbond's DDR SDRAM product line, engineered specifically for cost-sensitive, thermally demanding embedded systems requiring DDR500 performance with industrial-grade reliability and RoHS-compliant packaging.

FAQ

What is the maximum clock frequency supported by W9464G6JH-4?

W9464G6JH-4 supports a maximum clock frequency of 250 MHz, corresponding to DDR500 operation. This is validated at CL3 with tCK = 4 ns minimum and requires 2.4–2.7 V supply. The -4 speed grade is compliant with DDR500/CL3 and CL4 specifications per the October 2011 datasheet revision A02.

Does W9464G6JH-4 support self-refresh mode, and what is its current draw?

Yes, W9464G6JH-4 supports self-refresh mode entered via CKE low while all banks are idle. Its self-refresh current (IDD6) is specified at ≤2 mA maximum, enabling extended data retention during system suspend without external clocking - a key requirement for automotive and portable industrial applications.

How is write masking implemented on W9464G6JH-4?

W9464G6JH-4 implements write masking using two dedicated signals: LDM controls DQ0–DQ7 and UDM controls DQ8–DQ15. During burst writes, asserting either signal high masks the corresponding 8-bit byte, synchronized to both edges of DQS. This prevents partial-word corruption without requiring full-burst retransmission.

What package type and pin count does W9464G6JH-4 use?

W9464G6JH-4 uses a 66-pin TSOP II (400 mil) package with lead-free, RoHS-compliant construction. Pin layout follows JEDEC DDR SDRAM standard, including separate VDDQ/VSSQ rails, differential CLK/CLK inputs, and dual DQS/DM pairs for upper and lower data bytes.

Can W9464G6JH-4 operate at CL2, and what timing constraint applies?

Yes, W9464G6JH-4 supports CAS Latency 2. At CL2, the minimum clock cycle time (tCK) is 7.5 ns for the -4 speed grade, imposing a maximum clock frequency of 133 MHz. CL2 operation requires proper DLL initialization and is typically used in latency-critical control loops where throughput is secondary to response time.