Winbond Electronics Corporation W9464G6JH-5
- Part No.:
- W9464G6JH-5
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 66-TSSOP (0.400", 10.16mm Width)
- Datasheet:
-
W9464G6JH-5.pdf
- Description:
- IC DRAM 64MBIT PAR 66TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:3,224
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Product details
Overview
W9464G6JH-5 from Winbond Electronics is a 1M × 4 banks × 16-bit DDR SDRAM operating at 200 MHz (tCK = 10 ns), supporting CAS Latency 2/2.5/3/4 and SSTL_2 interface, designed for high-bandwidth memory subsystems in embedded controllers and industrial computing platforms requiring DDR400 compliance.
For engineers reviewing the W9464G6JH-5 datasheet, W9464G6JH-5 pinout, W9464G6JH-5 application, or W9464G6JH-5 equivalent, this page delivers verified timing parameters, bank activation behavior, differential clock handling, DQS alignment mode, and power-down current specs directly traceable to Winbond's official A02 revision documentation.
Technical Context
The W9464G6JH-5 implements a 4-bank architecture with programmable burst lengths (2/4/8) and interleaved read capability, using a DLL-based clock synchronization system that requires explicit EMRS initialization and MRS reset during power-up. Its command decoder interprets RAS/CAS/WE combinations with BA0–BA1 bank selection and multiplexed A0–A11 row/column addressing.
It supports both Auto Refresh (4K rows / 64 ms) and Self Refresh modes, with tRAS ≥ 40 ns and tRC ≥ 55 ns minimums, and features separate VDDQ/VSSQ I/O power domains to isolate data bus noise. Write latency is fixed at 1 cycle, and DQS is edge-aligned on reads and center-aligned on writes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1M × 4 banks × 16 bits = 64 Mbit total capacity; enables 16-bit wide data transfers per access. |
| Max Clock Frequency | 200 MHz (tCK = 10 ns); defines maximum sustained data rate of 400 MT/s (DDR400). |
| CAS Latency | Programmable CL2/2.5/3/4; determines minimum clock cycles between READ command and first valid data output. |
| Burst Length | Configurable 2/4/8; sets number of consecutive data words transferred per READ/WRITE command. |
| Supply Voltage | 2.5 V ±0.2 V; strict tolerance required for stable DDR400 operation and SSTL_2 signal integrity. |
| Refresh Interval | 64 ms for full 4K-row refresh; mandates minimum 4096 Auto Refresh commands per 64 ms window. |
| Self-Refresh Current | Max 2 mA; enables ultra-low-power data retention during system sleep without external clocking. |
Pinout & Package
Package: 66-pin TSOP II (400 mil), RoHS-compliant, lead-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A11 | Address Input | Multiplexed row/column address lines; A10 controls auto-precharge enable during command decode. |
| BA0, BA1 | Bank Address | Selects one of four internal banks for activation, read, or write operations. |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus synchronized to both edges of DQS; supports 16-bit parallel transfers. |
| LDQS, UDQS | Data Strobe | Lower/upper byte DQS signals; edge-aligned with read data, center-aligned with write data. |
| LDM, UDM | Data Mask | Byte-level write masking: LDM controls DQ0–DQ7, UDM controls DQ8–DQ15. |
| CLK, CLK# | Differential Clock | Timing reference sampled at crossing point; all control/address inputs referenced to CLK positive edge. |
| CKE | Clock Enable | Gate for clock domain; low state initiates Power Down, Suspend, or Self Refresh modes. |
| VREF | Input Reference | Stable 1.25 V reference for SSTL_2 input threshold; must be maintained even during Self Refresh. |
Key Features
| Feature | Design Value |
|---|---|
| Double Data Rate Architecture | Two data transfers per clock cycle (rising/falling edges of DQS), doubling effective bandwidth without increasing clock frequency. |
| Programmable Mode Register | Enables runtime configuration of burst length, CAS latency, and addressing mode (sequential/interleave) to match host controller requirements. |
| Differential Clock Interface | CLK/CLK# inputs improve jitter immunity and timing margin over single-ended clocks in high-speed PCB layouts. |
| Separate I/O Power Domain | VDDQ/VSSQ isolation reduces switching noise coupling from data bus into core logic, improving signal integrity and timing stability. |
| Auto & Self Refresh Support | Hardware-managed refresh eliminates host controller overhead; Self Refresh maintains data at <2 mA with no external clock. |
Applications
| Industrial HMI Controller | Medical Imaging Subsystem |
|---|---|
Use Scenario: Real-time display buffering and GUI rendering in panel-mounted HMIs with ARM-based SoCs. IC Role / Device Role / Timing Role: Primary working memory for frame buffer and application code execution, interfacing via 16-bit DDR bus with configurable CL3 timing. Use Value: 400 MT/s bandwidth sustains 1080p@60Hz overlay compositing; low IDD2Q (25 mA) extends thermal headroom in sealed enclosures. | Use Scenario: Pixel data staging in portable ultrasound machines with FPGA-accelerated beamforming. IC Role / Device Role / Timing Role: High-throughput data scratchpad between ADC front-end and processing pipeline, leveraging 4-bank interleaving for concurrent access. Use Value: tRC = 55 ns enables rapid bank switching across echo line buffers; SSTL_2 compatibility ensures clean signal integrity at 200 MHz. |
| Network Edge Router | Railway Signaling Module |
Use Scenario: Packet buffering and lookup table storage in fanless Layer 3 switches deployed in telecom cabinets. IC Role / Device Role / Timing Role: Shared memory resource for packet classification engines and forwarding tables, operating in Precharge Power Down mode during idle periods. Use Value: IDD2F = 25 mA in floating standby cuts system power by >15% during low-traffic intervals; -5I grade supports -40°C to +85°C operation. | Use Scenario: Safety-critical firmware and sensor history logging in EN 5012x-certified train control units. IC Role / Device Role / Timing Role: Non-volatile shadow RAM for fail-safe boot image storage and real-time event logging, using Self Refresh mode during power transitions. Use Value: IDD6 = 2 mA Self Refresh current guarantees 72+ hours of data retention on backup capacitor; RoHS/lead-free TSOP package meets rail environmental standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT46V32M16-5B | Same 64 Mbit density, 200 MHz max, but uses 84-ball BGA; CL2.5/3 only; higher IDD0 (55 mA vs 45 mA). | Requires PCB redesign due to BGA packaging; better suited for space-constrained designs where thermal dissipation allows higher current draw. | Select when board layout permits BGA and higher peak bandwidth is prioritized over pin compatibility. |
| IS42S16100E-5BL | Identical TSOP-66 package and pinout; same CL2/2.5/3/4 support; slightly tighter tRAS min (35 ns vs 40 ns) and lower IDD6 (1.8 mA). | Drop-in replacement with identical footprint and command set; validated for same industrial temperature range (-40°C to +85°C). | Preferred for direct substitution where minimal validation effort and guaranteed pin compatibility are required. |
Compared with W9464G6JH-5, MT46V32M16-5B offers higher integration density but demands layout changes, while IS42S16100E-5BL provides true pin-compatible replacement with marginally improved refresh efficiency and identical thermal envelope.
Availability
W9464G6JH-5 is available at Aetrix Electronics and suitable for industrial HMI controllers, medical imaging subsystems, and railway signaling modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W9464G6JH-5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR Flash, PSRAM, and DDR SDRAM for industrial and automotive markets.
The W9464G6JH-5 belongs to Winbond's legacy DDR1 SDRAM product line, engineered specifically for cost-sensitive, thermally constrained embedded systems needing reliable 400 MT/s performance with industrial-grade temperature support.
FAQ
What is the maximum supported clock frequency for W9464G6JH-5?
The W9464G6JH-5 is rated for DDR400 operation with a maximum clock frequency of 200 MHz, corresponding to a minimum clock cycle time (tCK) of 10 ns. This speed grade is confirmed in Winbond's A02 datasheet under the "-5" speed bin, and applies across the full industrial temperature range (-40°C to +85°C) for the -5I variant.
Does W9464G6JH-5 support CAS Latency 2.5, and how is it configured?
Yes, W9464G6JH-5 supports CAS Latency 2.5, which is programmed via the Mode Register Set (MRS) command using the A6–A4 bit field. The value is latched on the rising edge of CLK and remains active until reprogrammed; CL2.5 is valid for tCK ≥ 6 ns, aligning with the -5 speed grade's 10 ns minimum cycle time.
What is the function of the VREF pin on W9464G6JH-5, and what voltage must it maintain?
The VREF pin on W9464G6JH-5 serves as the reference voltage for all SSTL_2 input receivers (address, command, and control pins), and must be held at 1.25 V ±1% for correct logic thresholding. It remains active and must be supplied even during Self Refresh mode, as specified in Section 5 of the Winbond datasheet.
Can W9464G6JH-5 operate in Self Refresh mode without an external clock?
Yes, W9464G6JH-5 fully supports Self Refresh mode with CKE held low while all banks are idle; in this state, the internal oscillator sustains refresh timing autonomously, requiring no external clock signal. The device draws ≤2 mA (IDD6), and VREF must remain powered to maintain input thresholds during this mode.
How many banks does W9464G6JH-5 have, and what is their organization?
W9464G6JH-5 has four independent memory banks (Bank #0 through Bank #3), each organized as 1M × 16 bits. The bank architecture enables interleaved access-e.g., activating Bank #0 while precharging Bank #1-to hide tRCD and tRP delays and sustain high effective bandwidth in burst-intensive workloads.
W9464G6JH-5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 66-TSSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR
- Memory Size:
- 64Mbit
- Memory Organization:
- 4M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.3V ~ 2.7V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 66-TSOP II
W9464G6JH-5 FAQ
1.How can I place an order for W9464G6JH-5 through Aetrix?
Please submit a Request for Quotation (RFQ) for W9464G6JH-5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9464G6JH-5 reliable?
The price and inventory of W9464G6JH-5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9464G6JH-5 is usually 5 days.
3.What payment methods are accepted for W9464G6JH-5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9464G6JH-5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9464G6JH-5?
W9464G6JH-5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9464G6JH-5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9464G6JH-5?
For technical support, including W9464G6JH-5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9464G6JH-5 requirements.
6.How does Aetrix verify that W9464G6JH-5 is sourced from the original manufacturer or authorized distributors?
All W9464G6JH-5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9464G6JH-5 meets industry standards.
7.What is the process for return or replacement of W9464G6JH-5?
All W9464G6JH-5 units undergo pre-shipment inspection (PSI). If there is an issue with W9464G6JH-5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9464G6JH-5 part is unused and in its original packaging.
Return procedure for W9464G6JH-5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9464G6JH-5 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
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