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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W9464G6JH-5I

Name: W9464G6JH-5I
Brand: Winbond Electronics Corporation
SKU: W9464G6JH-5I
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W9464G6JH-5I

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 66-TSSOP (0.400", 10.16mm Width)

Datasheet:: W9464G6JH-5I.pdf

Description:: IC DRAM 64MBIT PAR 66TSOP II

Quantity:: RFQ Add To RFQ list

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Product details

Overview

W9464G6JH-5I from Winbond Electronics is a 1M × 4 banks × 16-bit DDR SDRAM operating at 200 MHz (5 ns tCK, CL=3), compliant with DDR400/CL3 specification and rated for industrial temperature range (–40°C to +85°C). It features SSTL_2 interface, programmable burst length (2/4/8), CAS latency options (2/2.5/3/4), and supports auto-refresh and self-refresh modes for embedded control and networking applications.

For engineers reviewing the W9464G6JH-5I datasheet, W9464G6JH-5I pinout, W9464G6JH-5I application, or W9464G6JH-5I equivalent, key selection criteria include its TSOP II 66-pin package, differential clock inputs (CLK/CLK), DQS edge-aligned read / center-aligned write timing, 2.5V ±0.2V supply, and industrial-grade thermal qualification.

Technical Context

This DDR SDRAM implements a double-data-rate architecture synchronized to both edges of DQS, with a DLL-based clock recovery circuit enabled via EMRS. Its command decoder interprets standard DDR commands (Activate, Precharge, Read, Write, Auto Refresh) using CS, RAS, CAS, and WE inputs referenced to CLK/CLK crossing points.

The device integrates four independent 1M-word banks with shared address/control bus and separate I/O power (VDDQ/VSSQ) for noise isolation. Mode Register configuration sets burst length, addressing mode (sequential/interleaved), and CAS latency; Extended Mode Register controls DLL enable/disable and output driver type.

Key Specifications

Parameter	Value and Actual Design Meaning
Organization	1M × 4 banks × 16 bits = 64 Mbit density; supports 16-bit data path in compact TSOP package.
Max Clock Frequency	200 MHz (tCK = 5 ns min); enables 400 MT/s data rate per pin under DDR400 spec.
CAS Latency	Configurable CL = 2, 2.5, 3, or 4; determines minimum clock cycles between READ command and first valid data.
Burst Length	Programmable 2, 4, or 8; defines number of consecutive data transfers per READ/WRITE command.
Supply Voltage	2.5V ±0.2V; compatible with standard DDR400 logic levels and SSTL_2 interface requirements.
Operating Temperature	–40°C to +85°C; qualified for industrial environments without derating.
Refresh Interval	64 ms for full array (4K rows); requires 4096 Auto Refresh commands within that window.
Self-Refresh Current	Max 2 mA; enables low-power data retention during system sleep states.

Pinout & Package

W9464G6JH-5I uses a 66-pin TSOP II (400 mil) package with lead-free, RoHS-compliant construction. Power and ground pins are segregated into VDD/VSS (core logic) and VDDQ/VSSQ (I/O buffer) domains to minimize switching noise.

Pin/Terminal	Circuit Role	Design Meaning
A0–A11	Address Input	Multiplexed row/column address lines; A10 controls auto-precharge enable.
BA0, BA1	Bank Address	Selects one of four internal memory banks for activation or access.
DQ0–DQ15	Data I/O	16-bit bidirectional data bus synchronized to both edges of DQS.
LDQS, UDQS	Data Strobe	Lower/upper byte DQS signals; edge-aligned on read, center-aligned on write.
LDM, UDM	Data Mask	Byte-level write masking: LDM controls DQ0–DQ7, UDM controls DQ8–DQ15.
CLK, CLK	Differential Clock	Timing reference for all commands; sampling occurs at CLK/CLK crossing point.
CKE	Clock Enable	Controls entry/exit from power-down and self-refresh modes when asserted low.
CS, RAS, CAS, WE	Command Inputs	Decode DDR command set (Activate, Precharge, Read, Write, Refresh, etc.).
VREF	Input Reference	Reference voltage for SSTL_2 input threshold; must be maintained during self-refresh.

Key Features

Feature	Design Value
Double Data Rate Architecture	Two data transfers per clock cycle on DQ/DQS, doubling bandwidth versus SDR SDRAM at same clock frequency.
Programmable Burst Length & CAS Latency	Enables system-level optimization of memory throughput vs. latency trade-offs via Mode Register configuration.
Differential Clock Interface (CLK/CLK)	Improves noise immunity and timing margin by rejecting common-mode jitter on clock inputs.
Separate I/O Power (VDDQ/VSSQ)	Reduces crosstalk between core logic and high-speed data paths, improving signal integrity.
Auto and Self Refresh Modes	Supports continuous operation (auto-refresh) and ultra-low-power data retention (self-refresh) without host intervention.

Applications

Industrial PLC Memory Buffer	Network Switch Packet Buffer
Use Scenario: Real-time I/O data buffering in programmable logic controllers with deterministic response requirements. IC Role / Device Role / Timing Role: High-bandwidth, low-latency DDR SDRAM serving as primary working memory for firmware execution and process data storage. Use Value: 200 MHz clock and CL=3 timing deliver predictable 400 MT/s throughput while industrial temperature rating ensures reliability in uncontrolled cabinet environments.	Use Scenario: Temporary storage of Ethernet frames in Layer 2/L3 switching ASICs requiring burst-oriented packet handling. IC Role / Device Role / Timing Role: Packet buffer supporting concurrent read/write operations across multiple banks to sustain line-rate forwarding. Use Value: Four independent banks enable interleaved access, minimizing bank conflict stalls; write mask (LDM/UDM) allows precise byte-level overwrite without read-modify-write cycles.
Medical Imaging Control Board	Automated Test Equipment (ATE)
Use Scenario: Frame buffer and configuration storage in portable ultrasound or X-ray control units with strict EMI and thermal constraints. IC Role / Device Role / Timing Role: Compact-density DDR memory interfacing directly to ARM Cortex-A series processors via standard DDR controller. Use Value: TSOP II package enables dense PCB layout; SSTL_2 compatibility ensures seamless integration with SoC DDR PHY; self-refresh mode extends battery life during standby.	Use Scenario: Pattern memory and result storage in high-speed digital test systems requiring deterministic memory access timing. IC Role / Device Role / Timing Role: Timing-critical memory subsystem where tRCD, tRP, and tRAS parameters must meet tight setup/hold windows for stimulus generation. Use Value: Guaranteed CL=3 performance at –40°C to +85°C eliminates thermal derating; precise AC specifications (e.g., tCK = 5 ns min) support sub-nanosecond timing closure.

Industrial PLC Memory Buffer

Network Switch Packet Buffer

Use Scenario: Real-time I/O data buffering in programmable logic controllers with deterministic response requirements.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency DDR SDRAM serving as primary working memory for firmware execution and process data storage.

Use Value: 200 MHz clock and CL=3 timing deliver predictable 400 MT/s throughput while industrial temperature rating ensures reliability in uncontrolled cabinet environments.

Use Scenario: Temporary storage of Ethernet frames in Layer 2/L3 switching ASICs requiring burst-oriented packet handling.

IC Role / Device Role / Timing Role: Packet buffer supporting concurrent read/write operations across multiple banks to sustain line-rate forwarding.

Use Value: Four independent banks enable interleaved access, minimizing bank conflict stalls; write mask (LDM/UDM) allows precise byte-level overwrite without read-modify-write cycles.

Medical Imaging Control Board

Automated Test Equipment (ATE)

Use Scenario: Frame buffer and configuration storage in portable ultrasound or X-ray control units with strict EMI and thermal constraints.

IC Role / Device Role / Timing Role: Compact-density DDR memory interfacing directly to ARM Cortex-A series processors via standard DDR controller.

Use Value: TSOP II package enables dense PCB layout; SSTL_2 compatibility ensures seamless integration with SoC DDR PHY; self-refresh mode extends battery life during standby.

Use Scenario: Pattern memory and result storage in high-speed digital test systems requiring deterministic memory access timing.

IC Role / Device Role / Timing Role: Timing-critical memory subsystem where tRCD, tRP, and tRAS parameters must meet tight setup/hold windows for stimulus generation.

Use Value: Guaranteed CL=3 performance at –40°C to +85°C eliminates thermal derating; precise AC specifications (e.g., tCK = 5 ns min) support sub-nanosecond timing closure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT46V32M16-5B:J	Same 512Mbit density (32M × 16), but rated for -40°C to +85°C at 2.5V and CL=3; uses 66-pin TSOP II package.	Identical industrial temperature range and pinout; differs in refresh timing (tRFC = 120 ns vs. 110 ns) and IDD current specs.	Drop-in replacement if board layout matches; verify tRFC compliance in high-temperature refresh scheduling.
IS42S16100E-5BLI	1M × 16-bit × 4-bank DDR SDRAM, 2.5V, CL=3, -40°C to +85°C; also 66-pin TSOP II.	Functionally identical timing and command set; minor differences in AC parameter tolerances (e.g., tAC skew).	Suitable for cost-sensitive designs; confirm DLL lock time and VREF stability per application note AN-102.

Compared with MT46V32M16-5B:J and IS42S16100E-5BLI, W9464G6JH-5I offers tighter tRAS/tRC specifications (40/55 ns) and lower self-refresh current (2 mA), making it preferable for thermally constrained or power-sensitive industrial deployments where timing margin and standby power are critical.

Availability

W9464G6JH-5I is available at Aetrix Electronics and suitable for industrial PLC memory buffers, network switch packet buffers, medical imaging control boards, and automated test equipment requiring stable component supply across extended temperature ranges.

Supply support for W9464G6JH-5I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W9464G6JH product line delivers cost-optimized, industrial-qualified DDR SDRAM targeting embedded systems where reliability, thermal robustness, and pin-compatible upgrade paths from legacy SDR devices are essential.

FAQ

What is the guaranteed CAS latency setting for W9464G6JH-5I?

W9464G6JH-5I is guaranteed to operate at CAS Latency 3 (CL=3) across its full industrial temperature range (–40°C to +85°C) and at 200 MHz (tCK = 5 ns). CL=2, 2.5, and 4 are also supported but not fully characterized over temperature for this speed grade. The Mode Register must be configured during power-up initialization to select the desired latency.

Does W9464G6JH-5I require external termination resistors for its SSTL_2 interface?

No, W9464G6JH-5I integrates on-die termination (ODT) for its DQ, DQS, and DM signals, eliminating the need for external pull-up/down resistors. External 25 Ω series resistors may still be used on DQ/DQS lines for impedance matching to PCB traces, but VTT termination is not required due to the SSTL_2-compliant internal driver design.

How many Auto Refresh commands does W9464G6JH-5I require per 64 ms?

W9464G6JH-5I requires exactly 4096 Auto Refresh commands within any 64 ms window to maintain data integrity across all 4K rows. This equates to one refresh command every 15.625 µs on average. The device supports up to eight pending Auto Refresh commands, allowing flexible scheduling around memory access bursts.

Can W9464G6JH-5I operate without a DLL-enabled configuration?

Yes, W9464G6JH-5I can operate with DLL disabled by setting the appropriate bit in the Extended Mode Register. However, DLL must be enabled during power-up initialization to achieve specified tAC and timing margins. Disabling DLL reduces jitter tolerance and may limit maximum reliable frequency in noisy environments, but supports basic functionality at reduced speeds.

What is the function of the A10 pin during Write and Read commands on W9464G6JH-5I?

On W9464G6JH-5I, the A10 pin serves dual functions: during Write and Read commands, A10 acts as the auto-precharge enable flag - when asserted high, it triggers automatic precharge after the burst completes. During Bank Activate commands, A10 is ignored (don't care), as row addressing uses A0–A11 exclusively.

W9464G6JH-5I Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 66-TSSOP (0.400", 10.16mm Width)

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR

Memory Size:: 64Mbit

Memory Organization:: 4M x 16

Memory Interface:: Parallel

Clock Frequency:: 200 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 55 ns

Voltage - Supply:: 2.3V ~ 2.7V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 66-TSOP II

W9464G6JH-5I FAQ

1.How can I place an order for W9464G6JH-5I through Aetrix?

Please submit a Request for Quotation (RFQ) for W9464G6JH-5I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9464G6JH-5I reliable?

The price and inventory of W9464G6JH-5I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9464G6JH-5I is usually 5 days.

3.What payment methods are accepted for W9464G6JH-5I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9464G6JH-5I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9464G6JH-5I?

W9464G6JH-5I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9464G6JH-5I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9464G6JH-5I?

For technical support, including W9464G6JH-5I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9464G6JH-5I requirements.

6.How does Aetrix verify that W9464G6JH-5I is sourced from the original manufacturer or authorized distributors?

All W9464G6JH-5I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9464G6JH-5I meets industry standards.

7.What is the process for return or replacement of W9464G6JH-5I?

All W9464G6JH-5I units undergo pre-shipment inspection (PSI). If there is an issue with W9464G6JH-5I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9464G6JH-5I part is unused and in its original packaging.

Return procedure for W9464G6JH-5I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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