Winbond Electronics Corporation W9464G6KH-5
- Part No.:
- W9464G6KH-5
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 66-TSSOP (0.400", 10.16mm Width)
- Datasheet:
-
W9464G6KH-5.pdf
- Description:
- IC DRAM 64MBIT PAR 66TSOP II
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W9464G6KH-5 from Winbond is a 1M × 4 banks × 16-bit DDR SDRAM operating at 200 MHz with 2.5V ±0.2V supply, CAS latency of 3, and tCK = 5–10 ns. It delivers up to 400M words/s bandwidth using double-data-rate architecture synchronized to both edges of DQS, and is designed for high-performance embedded systems requiring DDR400/CL3 compliance in 0°C to 70°C environments.
For engineers reviewing the W9464G6KH-5 datasheet, W9464G6KH-5 pinout, W9464G6KH-5 application, or W9464G6KH-5 equivalent, this page provides verified timing parameters, bank activation behavior, SSTL_2 interface compatibility, self-refresh current (2 mA), and TSOP II 66-pin package mapping - all confirmed from Winbond's official A02 revision datasheet dated Nov. 14, 2014.
Technical Context
This DDR SDRAM implements a 4-bank architecture with programmable burst lengths (2/4/8), selectable addressing modes (sequential/interleave), and DLL-based clock synchronization. Its command decoder accepts standard DDR control signals (CS, RAS, CAS, WE) and supports auto-precharge, burst stop, and extended mode register (EMRS) configuration for DLL enable/disable.
It features dual power domains (VDD for core logic, VDDQ/VSSQ for I/O), differential clock inputs (CLK/CLK), edge-aligned DQS on read and center-aligned DQS on write, and write data masking via LDM/UDM pins. Refresh is managed via 4K-row/64ms cycle with tRFC ≥ 60 ns and maximum 8-burst refresh capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Organization | 1M × 4 banks × 16 bits - supports 16-bit wide data bus with independent bank access for interleaved throughput. |
| Data Rate | DDR400 (200 MHz clock, 400 MT/s) - enables 6.4 GB/s peak bandwidth on 16-bit bus. |
| CAS Latency | CL = 3 - defines 3-clock-cycle delay from READ command to first valid DQ output; fixed for -5 speed grade. |
| tCK Min/Max | 5 ns / 10 ns - sets maximum clock frequency (200 MHz) and minimum timing margin for stable operation. |
| Refresh Interval | 64 ms / 4K rows - requires 4096 auto-refresh commands within 64 ms; tREFI = 15.6 µs typical. |
| Supply Voltage | 2.5V ±0.2V - mandates tight regulation; VDDQ separated from VDD to reduce I/O noise coupling. |
| Self-Refresh Current | 2 mA - enables low-power retention during system suspend without external clock or refresh controller. |
| Interface Standard | SSTL_2 - requires 1.25V VREF reference and compatible termination for signal integrity on DDR buses. |
Pinout & Package
W9464G6KH-5 is packaged in a RoHS-compliant, lead-free TSOP II 66-pin (14 mm × 20 mm) surface-mount package with separate VDD/VDDQ and VSS/VSSQ power/ground domains for noise isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A11 | Address Input | Multiplexed row/column address lines; A10 controls auto-precharge enable during command decode. |
| BA0, BA1 | Bank Address | Selects one of four internal banks for activate/precharge/read/write operations. |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus synchronized to both edges of DQS; supports burst transfers. |
| LDQS, UDQS | Data Strobe | Bidirectional strobe: edge-aligned with read data, center-aligned with write data; per-byte group (L/U). |
| LDM, UDM | Write Mask | Byte-level write masking: LDM masks DQ0–DQ7, UDM masks DQ8–DQ15 during burst writes. |
| CLK, CLK | Differential Clock | Timing reference sampled at crossing point; all control/address inputs referenced to CLK positive edge. |
| CKE | Clock Enable | Controls entry/exit from power-down, self-refresh, and suspend modes; low disables internal clocking. |
| CS, RAS, CAS, WE | Command Inputs | Decode DDR command set (activate, precharge, read, write, MRS, EMRS, refresh) per JEDEC standard. |
| VREF | Input Reference | 1.25V reference for SSTL_2 input threshold; must be stable during self-refresh mode. |
| VDD, VSS | Core Power/Ground | 2.5V supply and return for internal logic; must be applied before VDDQ during power-up sequence. |
| VDDQ, VSSQ | I/O Power/Ground | Separated 2.5V domain for output drivers to minimize switching noise on data bus. |
| NC | No Connect | Unbonded pins (e.g., pins 14, 17, 19, 25, 42, 43, 50, 53); must remain unconnected on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Double Data Rate Architecture | Two data transfers per clock cycle (rising + falling edge of DQS) doubles effective bandwidth without increasing clock frequency. |
| Programmable Mode Register | Configures burst length (2/4/8), CAS latency (2/2.5/3), addressing mode, and DLL reset - enabling runtime optimization. |
| Auto & Self Refresh Support | Auto-refresh maintains data with external controller; self-refresh retains data at 2 mA with no clock or commands required. |
| Write Data Mask (WDMS) | LDM/UDM pins allow per-byte disabling of write data, eliminating need for read-modify-write cycles in partial updates. |
| Power-Down Modes | Precharge and active power-down reduce IDD2F/IDD2Q to ≤25 mA; CKE-controlled entry/exit ensures deterministic state transitions. |
| SSTL_2 Interface Compliance | Guarantees interoperability with industry-standard DDR controllers and layout practices including controlled impedance and termination. |
Applications
| Networking Equipment | Industrial HMI Panels |
|---|---|
|
Use Scenario: Packet buffering and table lookups in Layer 2/3 switches and routers with real-time traffic shaping. IC Role / Device Role / Timing Role: High-bandwidth, low-latency DDR memory supporting concurrent multi-bank access for parallel packet processing pipelines. Use Value: 4-bank interleaving and CL3 timing enable sustained 400 MT/s throughput across multiple concurrent read/write streams without bank conflicts. |
Use Scenario: Frame buffer and application code storage in ruggedized touch-panel HMIs with extended temperature operation. IC Role / Device Role / Timing Role: Primary system memory interfacing directly to ARM Cortex-A/MIPS-based SoCs via standard DDR controller PHY. Use Value: TSOP II package withstands thermal cycling; self-refresh at 2 mA extends battery-backed operation during power loss events. |
| Digital Set-Top Boxes | Medical Imaging Controllers |
|
Use Scenario: Video decode buffer and OSD compositing in MPEG-4/H.264 decoding platforms with HDMI output. IC Role / Device Role / Timing Role: Burst-length-8 capable memory delivering continuous 16-bit pixel streams synchronized to video clock domains. Use Value: Edge-aligned DQS on read ensures precise pixel timing alignment; write mask enables efficient alpha-blending updates without full-frame writes. |
Use Scenario: Real-time acquisition buffer for ultrasound or X-ray image capture subsystems requiring deterministic latency. IC Role / Device Role / Timing Role: Low-jitter, high-reliability memory supporting burst-mode ADC data ingestion and DMA transfer to host processor. Use Value: tRCD = 20 ns and tRP = 20 ns guarantee sub-50 ns bank activation/precharge overhead, critical for time-critical imaging pipelines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT46V32M16-5B:J | Same 512Mb × 16 organization, but rated for -5B (2.6V–2.7V VDD), higher IDD0 (50 mA vs. 45 mA), and different tRC (60 ns vs. 55 ns). | Designed for server-grade DDR modules; less suitable for cost-sensitive industrial designs due to tighter voltage tolerance. | Choose only if existing design uses Micron's DDR controller timing margins and requires JEDEC-compliant -5B qualification. |
| IS42S16100E-5BLI | Identical 1M × 4 × 16 structure and -5 speed grade, but supports CL2.5/3 only (no CL2), and has higher self-refresh current (3 mA vs. 2 mA). | Qualified for industrial temp (-40°C to +85°C) as -5BLI variant; not drop-in for W9464G6KH-5's commercial temp range. | Select when extended temperature range is mandatory and 1 mA higher self-refresh current is acceptable in battery-backed systems. |
Compared with MT46V32M16-5B:J and IS42S16100E-5BLI, W9464G6KH-5 offers lower operating current (45 mA IDD0), tighter tRC (55 ns), and optimized commercial-temp power delivery - making it preferable for embedded consumer and industrial applications where cost, thermal headroom, and voltage margin are constrained.
Availability
W9464G6KH-5 is available at Aetrix Electronics and suitable for networking equipment, industrial HMI panels, digital set-top boxes, and medical imaging controllers requiring stable component supply, long-term lifecycle support, and RoHS-compliant TSOP II packaging.
Supply support for W9464G6KH-5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for embedded and industrial markets.
W9464G6KH-5 belongs to Winbond's DDR SDRAM product line, engineered for cost-effective, high-reliability memory in space-constrained consumer and industrial applications requiring DDR400 performance with minimal power overhead.
FAQ
What is the maximum clock frequency supported by W9464G6KH-5?
W9464G6KH-5 supports a maximum clock frequency of 200 MHz, corresponding to DDR400 data rate (400 MT/s). This is defined by its tCK minimum of 5 ns under CL=3 conditions, as specified in Winbond's A02 datasheet section 4 (KEY PARAMETERS). The device is fully compliant with JEDEC DDR-400 timing requirements and requires stable 2.5V ±0.2V supply to sustain this frequency.
Does W9464G6KH-5 support CAS latency 2?
No, W9464G6KH-5 does not support CAS latency 2. According to Winbond's official datasheet revision A02, section 2 (FEATURES), the supported CAS latencies are 2, 2.5, and 3 - but section 3 (ORDER INFORMATION) explicitly lists W9464G6KH-5 as DDR400/CL3 only. The -5 speed grade is characterized and guaranteed exclusively for CL=3 operation; CL=2 is only supported by faster speed grades such as -4.
What is the purpose of the VREF pin on W9464G6KH-5?
The VREF pin on W9464G6KH-5 provides a 1.25V reference voltage for SSTL_2 input buffers, setting the switching threshold for address, command, and control signals (CS, RAS, CAS, WE, CKE, BA0/BA1, A0–A11). As stated in section 6 (PIN DESCRIPTION), VREF must remain stable during all operational modes - including self-refresh - and must be decoupled with 0.1 µF near the package per Winbond's layout recommendations.
Can W9464G6KH-5 operate in self-refresh mode without an external clock?
Yes, W9464G6KH-5 can operate in self-refresh mode without an external clock. When CKE is driven low while all banks are idle, the device enters self-refresh and maintains data retention using its internal oscillator, drawing only 2 mA (section 3, ORDER INFORMATION). During this mode, CLK/CLK inputs are ignored, but VREF must remain powered and stable per section 8.2.14 of the datasheet.
What package type is used for W9464G6KH-5?
W9464G6KH-5 uses a TSOP II (Thin Small Outline Package, Type II) with 66 pins, as confirmed in section 2 (FEATURES) and section 13 (Package Specification) of the Winbond datasheet. It measures 14 mm × 20 mm, is lead-free and RoHS-compliant, and features staggered pin layout optimized for high-density PCB routing in DDR memory subsystems.
W9464G6KH-5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 66-TSSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR
- Memory Size:
- 64Mbit
- Memory Organization:
- 4M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.3V ~ 2.7V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 66-TSOP II
W9464G6KH-5 FAQ
1.How can I place an order for W9464G6KH-5 through Aetrix?
Please submit a Request for Quotation (RFQ) for W9464G6KH-5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9464G6KH-5 reliable?
The price and inventory of W9464G6KH-5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9464G6KH-5 is usually 5 days.
3.What payment methods are accepted for W9464G6KH-5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9464G6KH-5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9464G6KH-5?
W9464G6KH-5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9464G6KH-5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9464G6KH-5?
For technical support, including W9464G6KH-5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9464G6KH-5 requirements.
6.How does Aetrix verify that W9464G6KH-5 is sourced from the original manufacturer or authorized distributors?
All W9464G6KH-5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9464G6KH-5 meets industry standards.
7.What is the process for return or replacement of W9464G6KH-5?
All W9464G6KH-5 units undergo pre-shipment inspection (PSI). If there is an issue with W9464G6KH-5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9464G6KH-5 part is unused and in its original packaging.
Return procedure for W9464G6KH-5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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