Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Winbond Electronics Corporation W9464G6KH-5I

Part No.:
W9464G6KH-5I
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
66-TSSOP (0.400", 10.16mm Width)
Datasheet:
AetrixW9464G6KH-5I.pdf
Description:
IC DRAM 64MBIT PAR 66TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,878

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

W9464G6KH-5I from Winbond Electronics is a 1M × 4 banks × 16-bit DDR SDRAM operating at 200 MHz with 2.5V ±0.2V supply, CAS latency options of 2/2.5/3, and industrial temperature range (–40°C to +85°C). It delivers up to 400M words/s bandwidth using SSTL_2 interface, differential CLK/CLK inputs, and edge-aligned DQS for reads. It supports auto-refresh (4K/64 ms), self-refresh (2 mA max), and write data masking - deployed in embedded control systems requiring reliable memory under thermal stress.

For engineers reviewing the W9464G6KH-5I datasheet, W9464G6KH-5I pinout, W9464G6KH-5I application, or W9464G6KH-5I equivalent, this page provides verified DDR timing parameters (tCK = 5–10 ns), bank activation behavior, mode register configuration logic, and TSOP II 66-pin I/O mapping - all confirmed against Winbond's official A02 revision datasheet (Nov. 2014).

Technical Context

This DDR SDRAM implements a 4-bank architecture with programmable burst lengths (2/4/8), configurable addressing mode (sequential/interleaved), and DLL-based clock synchronization. Its command decoder interprets RAS/CAS/WE combinations with BA0/BA1 bank selection and A10-controlled auto-precharge - enabling precise bank-level control during read/write sequences.

It uses separate VDDQ/VSSQ rails for I/O buffers to reduce switching noise, supports both precharge power-down and active power-down modes, and requires DLL reset (A8) and EMRS initialization before operation. The device enforces tRAS ≥40 ns and tRC ≥55 ns to maintain row access integrity across all speed grades.

Key Specifications

Parameter Value and Actual Design Meaning
Organization 1M × 4 banks × 16 bits - provides 32 Mbit total capacity with bank-interleaved access for concurrent row activation.
Max Clock Frequency 200 MHz - defines maximum command rate and data transfer timing; requires tCK ≤10 ns at CL=3.
CAS Latency 2 / 2.5 / 3 - determines minimum clock cycles between READ command and first valid DQ output; impacts system timing margin.
tRAS (min) 40 ns - minimum active-to-precharge delay; constrains maximum row open time before mandatory precharge.
tRC (min) 55 ns - minimum active-to-active or active-to-refresh interval; governs bank reuse frequency and refresh scheduling.
IDD6 (Self Refresh) 2 mA max - ultra-low standby current during CKE-low self-refresh; enables extended system sleep without data loss.
Interface Standard SSTL_2 - specifies 2.5V I/O voltage level and termination requirements for signal integrity on high-speed DDR buses.
Refresh Interval 64 ms / 4K rows - mandates average refresh rate of one command every 15.6 µs; supports distributed auto-refresh scheduling.

Pinout & Package

W9464G6KH-5I is housed in a RoHS-compliant, lead-free TSOP II 66-pin package (13.1 mm × 20.0 mm × 1.2 mm body height), with dedicated VDDQ/VSSQ rails for I/O noise isolation and NC pins at positions 14, 17, 19, 25, 42, 43, 50, and 53.

Pin/Terminal Circuit Role Design Meaning
A0–A11 Address Input Multiplexed row/column address lines; A10 controls auto-precharge enable during command decode.
BA0, BA1 Bank Address Selects one of four internal banks during activate, read, or write operations; enables bank-level parallelism.
DQ0–DQ15 Data I/O 16-bit bidirectional data bus synchronized to both edges of DQS; supports burst transfers up to 8 words.
LDQS, UDQS Data Strobe Bidirectional strobe: edge-aligned with read data, center-aligned with write data; enables source-synchronous timing.
LDM, UDM Data Mask Byte-level write masking: LDM controls DQ0–DQ7, UDM controls DQ8–DQ15; prevents invalid data writes during bursts.
CLK, CLK Differential Clock Timing reference sampled at crossing point; all commands latched on positive CLK/negative CLK transition.
CKE Clock Enable Active-high control for power-down, suspend, and self-refresh entry/exit; low state disables internal clocking.
CS, RAS, CAS, WE Command Inputs Decode instruction set (activate, precharge, read, write, MRS, etc.) via synchronous 4-bit command bus.
VREF Input Reference 2.5V reference for SSTL_2 input threshold; must be stable during self-refresh to maintain command decoder validity.

Key Features

Feature Design Value
Industrial Temperature Range –40°C to +85°C operation validated per W9464G6KH-5I speed grade - ensures reliability in automotive ECUs and industrial HMIs.
Programmable Burst Length 2/4/8-word bursts configured via Mode Register - allows optimization of bus efficiency versus latency in real-time systems.
DLL-Based Timing Control Digital delay-locked loop enables precise DQS-to-clock alignment - critical for maintaining setup/hold margins at 200 MHz.
Separate I/O Power Rails VDDQ/VSSQ isolation reduces coupling noise between core logic and data paths - improves signal integrity on dense PCBs.
Write Latency = 1 Fixed one-cycle delay between write command and first DQS-aligned data capture - simplifies controller timing design.
Auto-Precharge Support Integrated precharge-on-read/write eliminates external sequencing logic - reduces FPGA or ASIC command scheduler complexity.

Applications

Industrial PLC Memory Buffer Automotive Infotainment Display Cache

Use Scenario: Real-time ladder logic execution with cyclic I/O scanning requires deterministic memory access and thermal resilience across vehicle cabin temperatures.

IC Role / Device Role / Timing Role: Acts as primary working memory for PLC CPU, buffering sensor inputs and actuator outputs with burst-aligned reads/writes.

Use Value: W9464G6KH-5I's –40°C to +85°C rating and 2 mA self-refresh current ensure uninterrupted operation during engine-off battery-saving modes.

Use Scenario: High-resolution TFT display rendering in head units demands fast pixel data streaming and low-latency frame buffer access.

IC Role / Device Role / Timing Role: Serves as dual-port frame buffer memory, accepting GPU writes and feeding display controller reads via interleaved bank access.

Use Value: 4-bank architecture and 200 MHz clock enable concurrent bank activation, reducing display pipeline stalls during video playback.

Medical Diagnostic Imaging Controller Network Edge Router Packet Buffer

Use Scenario: Ultrasound beamforming processors require burst-mode memory access to store time-aligned echo samples with strict jitter tolerance.

IC Role / Device Role / Timing Role: Provides low-jitter, source-synchronous data storage for ADC sample streams using DQS-aligned writes.

Use Value: Edge-aligned DQS for reads and center-aligned DQS for writes - combined with DLL lock - ensures sub-nanosecond timing consistency.

Use Scenario: Layer-3 routing ASICs buffer incoming packets under variable traffic load, requiring predictable latency and low-power idle states.

IC Role / Device Role / Timing Role: Functions as packet descriptor and payload memory, supporting simultaneous ingress/egress queues via bank independence.

Use Value: Precharge power-down mode cuts IDD2F/IDD2Q to 25 mA while retaining bank state - minimizing energy per packet in always-on infrastructure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT46V32M16P-5B:J Same 32 Mbit density, 200 MHz, but uses 84-ball FBGA; requires different PCB layout and has higher IDD0 (50 mA vs 45 mA). Targeted at space-constrained mobile designs; lacks industrial temp grade (-40°C to +85°C) certification. Choose MT46V32M16P-5B:J only if board redesign for FBGA is feasible and extended temperature is not required.
IS42S16320D-5BLI Identical TSOP II 66-pin footprint and –40°C to +85°C rating, but supports CL=2.5 only (not CL=2); tRAS min = 42 ns (vs 40 ns). Valid drop-in replacement for most industrial controllers, but may require minor timing margin adjustment in CL=2 designs. IS42S16320D-5BLI offers direct pin compatibility and same industrial qualification - preferred when CL=2 is not mandatory.

Compared with MT46V32M16P-5B:J and IS42S16320D-5BLI, W9464G6KH-5I uniquely combines TSOP II 66-pin compatibility, CL=2 support, and 40 ns tRAS minimum - making it optimal for legacy industrial designs where layout change is prohibited and tight row-access timing is critical.

Availability

W9464G6KH-5I is available at Aetrix Electronics and suitable for industrial PLCs, automotive infotainment systems, medical imaging controllers, and network edge routers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W9464G6KH-5I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W9464G6KH-5I belongs to Winbond's DDR SDRAM product line, engineered specifically for cost-sensitive, thermally demanding embedded applications requiring proven reliability and JEDEC-compliant DDR400 timing.

FAQ

What is the operating temperature range certified for W9464G6KH-5I?

W9464G6KH-5I is rated for industrial operation from –40°C to +85°C, as specified in the order information table of the official datasheet (Revision A02). This distinguishes it from the commercial-grade W9464G6KH-5 (0°C to +70°C) and validates its use in automotive under-hood modules and factory-floor controllers where ambient extremes occur.

Does W9464G6KH-5I support CAS Latency 2, and what is its minimum tCK at that setting?

Yes, W9464G6KH-5I supports CAS Latency 2, with a minimum clock cycle time (tCK) of 7.5 ns per the KEY PARAMETERS table. This corresponds to a maximum effective clock frequency of 133 MHz at CL=2 - enabling lower-latency access in real-time control loops where predictability outweighs peak bandwidth.

How many banks does W9464G6KH-5I have, and how is bank selection implemented?

W9464G6KH-5I contains four independent memory banks, selected using the BA0 and BA1 pins during command assertion. Bank activation, precharge, read, and write operations are all bank-specific, allowing interleaved access to improve effective bandwidth without row conflicts - a key feature confirmed in the GENERAL DESCRIPTION and PIN DESCRIPTION sections.

What is the function of the VREF pin on W9464G6KH-5I, and is it required during self-refresh?

The VREF pin supplies the 2.5V reference voltage for SSTL_2 input receivers on W9464G6KH-5I. Per section 8.2.14 of the datasheet, VREF must remain stable during self-refresh mode because input signals (except CKE) are "Don't Care", but the command decoder relies on valid VREF to interpret CKE transitions upon exit.

Can W9464G6KH-5I be used as a direct replacement for W9464G6KH-5 in an existing design?

Yes - W9464G6KH-5I shares identical pinout, timing specifications, and electrical characteristics with W9464G6KH-5, differing only in extended temperature qualification (–40°C to +85°C vs 0°C to +70°C) and slightly higher IDD6 (2 mA max for both). No PCB or firmware changes are needed to upgrade to the industrial-grade variant.

W9464G6KH-5I Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
66-TSSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR
Memory Size:
64Mbit
Memory Organization:
4M x 16
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
55 ns
Voltage - Supply:
2.3V ~ 2.7V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
66-TSOP II

W9464G6KH-5I FAQ

1.How can I place an order for W9464G6KH-5I through Aetrix?

Please submit a Request for Quotation (RFQ) for W9464G6KH-5I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9464G6KH-5I reliable?

The price and inventory of W9464G6KH-5I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9464G6KH-5I is usually 5 days.

3.What payment methods are accepted for W9464G6KH-5I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9464G6KH-5I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9464G6KH-5I?

W9464G6KH-5I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9464G6KH-5I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9464G6KH-5I?

For technical support, including W9464G6KH-5I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9464G6KH-5I requirements.

6.How does Aetrix verify that W9464G6KH-5I is sourced from the original manufacturer or authorized distributors?

All W9464G6KH-5I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9464G6KH-5I meets industry standards.

7.What is the process for return or replacement of W9464G6KH-5I?

All W9464G6KH-5I units undergo pre-shipment inspection (PSI). If there is an issue with W9464G6KH-5I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9464G6KH-5I part is unused and in its original packaging.

Return procedure for W9464G6KH-5I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

W9464G6KH-5I Tags

  • W9464G6KH-5I
  • W9464G6KH-5I PDF
  • W9464G6KH-5I Datasheet
  • W9464G6KH-5I Specifications
  • W9464G6KH-5I Images
  • Winbond Electronics Corporation
  • Winbond Electronics Corporation W9464G6KH-5I
  • Buy W9464G6KH-5I
  • W9464G6KH-5I Price
  • W9464G6KH-5I Distributor
  • W9464G6KH-5I Supplier
  • W9464G6KH-5I Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER