Winbond Electronics Corporation W947D2HBJX5E

Overview

W947D2HBJX5E from Winbond is a 128Mb mobile LPDDR SDRAM with x16 data bus, 1.8V core/I/O supply, CAS latency of 2 or 3, and support for burst lengths of 2/4/8/16 in sequential or interleave mode. It operates at up to 200MHz (CL=2) and implements Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR) for ultra-low-power mobile applications including smartphones and portable media devices.

For engineers reviewing the W947D2HBJX5E datasheet, W947D2HBJX5E pinout, W947D2HBJX5E application, or W947D2HBJX5E equivalent, key selection considerations include its 60-ball VFBGA x16 package, deep power-down mode, programmable output drive strength, LVCMOS-compatible interface, and bank-interleaved burst access architecture optimized for battery-constrained embedded systems.

Technical Context

This LPDDR SDRAM uses four independent internal banks to enable row activation overlap and hide precharge latency via bank interleaving. Its command interface relies on differential CK/CK inputs, synchronous CKE control, and LVCMOS-compatible address/control signals with CS-driven command decoding.

Operation supports both auto-precharge and non-auto-precharge read/write bursts, with DM-masked write data sampling on both edges of DQS. The device requires two consecutive AUTO REFRESH commands during initialization and supports status register reads (SRR) for real-time monitoring of self-refresh and temperature-compensation states.

Key Specifications

Pinout & Package

W947D2HBJX5E is packaged in a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) compliant with LPDDR x16 layout. Pin assignments follow JEDEC MO-245AC standard with dedicated VSS/VSSQ ground planes, split VDD/VDDQ supplies, and symmetric DQ/DQS/DM routing for signal integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H128M16LFCK-6 IT and EM68B16CWQ-25H, W947D2HBJX5E uniquely combines JEDEC-compliant x16 pinout, CL=2 capability at 200MHz, PASR, and ATCSR-enabling longer battery runtime and simpler thermal design in mobile and portable industrial systems.

Availability

W947D2HBJX5E is available at Aetrix Electronics and suitable for smartphone application processor memory, portable media player buffering, wireless handheld terminal RAM, and industrial handheld scanner cache requiring stable component supply and long-term lifecycle support.

Supply support for W947D2HBJX5E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for mobile and embedded markets.

W947D2HBJX5E belongs to Winbond's Mobile LPDDR SDRAM product line, designed specifically for power-constrained portable electronics requiring high bandwidth, JEDEC-compliant interfaces, and advanced power management features like PASR and ATCSR.

FAQ

What is the operating voltage range for W947D2HBJX5E?

W947D2HBJX5E operates with VDD and VDDQ supplied between 1.7 V and 1.95 V. This 1.8 V nominal range is optimized for mobile SoC interfaces and enables stable operation across battery discharge curves. Both supplies must ramp simultaneously during power-up to prevent latch-up, and VDDQ must remain within ±3% of VDD during active operation to maintain signal integrity on the DQ bus.

Does W947D2HBJX5E support CAS latency of 2?

Yes, W947D2HBJX5E supports CAS latency of 2 at its highest speed grade (–5, 200 MHz). CL=2 is configured via bits A4–A6 in the Mode Register and reduces tAA to 10 ns, enabling faster read data availability for time-critical applications like UI rendering and real-time audio buffering. CL=3 is also supported for relaxed timing margins in thermally constrained or lower-frequency deployments.

How many internal banks does W947D2HBJX5E have, and why does it matter?

W947D2HBJX5E contains four independent internal banks. This architecture allows overlapping row activation and precharge operations across banks-e.g., activating a row in Bank 1 while reading from Bank 0-thereby hiding tRP and tRC delays and increasing effective memory bandwidth. Bank interleaving is essential for sustaining high throughput in burst-intensive workloads such as video decode and graphics rendering.

What is the package type and ball count for W947D2HBJX5E?

W947D2HBJX5E uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package conforming to JEDEC MO-245AC. Its x16 configuration places DQ0–DQ15, UDQS/LDQS, UDM/LDM, and address/control signals on a compact 8 mm × 8 mm footprint with 0.5 mm pitch. This package is compatible with standard LPDDR x16 layout rules and supports automated optical inspection and reflow soldering in high-volume mobile assembly lines.

Can W947D2HBJX5E enter Deep Power Down mode, and what happens to memory contents?

Yes, W947D2HBJX5E supports Deep Power Down (DPD) mode, entered via a specific command sequence with CKE LOW and CS HIGH. In DPD mode, current drops below 10 µA and all internal state-including mode registers and bank activation-is lost. Memory contents are not retained; the device requires full re-initialization (including two AUTO REFRESH commands and MRS/EMRS programming) before resuming normal operation. DPD is intended for extended idle periods where zero data retention is acceptable.