Winbond Electronics Corporation W947D2HBJX5I TR

Overview

W947D2HBJX5I TR from Winbond is a 128Mb mobile LPDDR SDRAM in 60-ball VFBGA (x16) package, operating at 1.7–1.95V VDD/VDDQ with CAS latency of 2 or 3, 200MHz clock rate (–5 speed grade), and four internal banks for interleaved access in portable SoC memory subsystems.

For engineers reviewing the W947D2HBJX5I TR datasheet, W947D2HBJX5I TR pinout, W947D2HBJX5I TR application, or W947D2HBJX5I TR equivalent, this device serves as a low-power, burst-oriented synchronous DRAM optimized for battery-constrained mobile platforms requiring PASR, ATCSR, deep power-down, and programmable drive strength.

Technical Context

This LPDDR SDRAM implements differential CK/CK inputs, bidirectional DQS strobes (UDQS/LDQS), and LVCMOS-compatible signaling with separate VDDQ/VSSQ rails for I/O noise isolation. It supports sequential or interleave burst types, auto-precharge per access, and status register read (SRR) for real-time monitoring.

Initialization requires strict sequencing: 200μs stable clocks after power-up, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. The device enters self-refresh autonomously via ATCSR and reduces active power using clock stop and power-down modes.

Key Specifications

Pinout & Package

W947D2HBJX5I TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, 8mm × 10.5mm × 0.6mm, compliant with JEDEC MO-245. Pinout matches the LPDDR x16 configuration defined in Section 3.1 of the datasheet.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H128M16LFCK-6 IT:F and EM68B16CWQ-5G, W947D2HBJX5I TR uniquely combines industrial temperature rating, PASR, ATCSR, and DPD in a 60-ball x16 package-enabling longer battery life and smaller form factors in ruggedized mobile designs.

Availability

W947D2HBJX5I TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, wearable OS runtime memory, and IoT edge node sensor caches requiring stable component supply across production lifecycles.

Supply support for W947D2HBJX5I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

W947D2HBJX5I TR belongs to Winbond's Mobile LPDDR SDRAM product line, engineered specifically for battery-powered handheld devices demanding ultra-low standby power, thermal resilience, and JEDEC-compliant interoperability with leading application processors.

FAQ

What is the exact memory organization of W947D2HBJX5I TR?

W947D2HBJX5I TR is organized as 16M words × 16 bits (128Mb total), with four internal banks, row addresses A0–A11, and column addresses A0–A8. This x16 configuration maps directly to the 60-ball VFBGA package and supports burst lengths of 2, 4, 8, or 16 for efficient sequential access in mobile memory subsystems.

Does W947D2HBJX5I TR support both CAS latency 2 and 3?

Yes, W947D2HBJX5I TR supports programmable CAS latency of CL=2 or CL=3 via the Mode Register. CL=2 is used for lowest-latency operation at 200MHz, while CL=3 provides additional timing margin for marginal signal integrity or higher temperature operation-both are fully validated in the datasheet's AC timing tables.

What power-saving features does W947D2HBJX5I TR implement beyond standard self-refresh?

W947D2HBJX5I TR implements Partial Array Self Refresh (PASR), Automatic Temperature Compensated Self Refresh (ATCSR), Deep Power Down (DPD), and Clock Stop. PASR reduces refresh current by limiting refresh to active subarrays; ATCSR adjusts refresh rate based on die temperature; DPD cuts standby current below 10μA; and Clock Stop halts internal timing during idle periods without losing state.

Is W947D2HBJX5I TR pin-compatible with other Winbond LPDDR parts like W947D6HB?

No, W947D2HBJX5I TR is not pin-compatible with W947D6HB. While both are 128Mb LPDDR SDRAMs, W947D2HBJX5I TR is the x16 variant in 60-ball VFBGA, whereas W947D6HB is the x32 variant in 90-ball VFBGA. Their ball assignments, signal counts (e.g., DQ0–DQ15 vs. DQ0–DQ31), and DQS/DM pin layouts differ fundamentally per JEDEC LPDDR specification.

What is the significance of the "TR" suffix in W947D2HBJX5I TR?

The "TR" suffix in W947D2HBJX5I TR indicates tape-and-reel packaging-standard for automated SMT assembly. It denotes that the part is supplied in moisture-sensitive packaging conforming to J-STD-020, with dry pack, humidity indicator, and bake requirements specified in the datasheet's ordering information section.