Winbond Electronics Corporation W947D2HBJX6E

Overview

W947D2HBJX6E from Winbond is a 128Mb mobile LPDDR SDRAM with x16 data bus, 1.7–1.95V VDD/VDDQ supply, CAS latency of 2 or 3, and support for burst lengths of 2/4/8/16 in sequential or interleave mode - used as main memory in space-constrained portable devices requiring low standby power.

For engineers reviewing the W947D2HBJX6E datasheet, W947D2HBJX6E pinout, W947D2HBJX6E application, or W947D2HBJX6E equivalent, key selection criteria include its 60-ball VFBGA x16 package, PASR/ATCSR self-refresh modes, deep power-down capability, and compatibility with LPDDR timing protocols in battery-powered embedded systems.

Technical Context

This LPDDR SDRAM implements four independent internal banks to enable bank interleaving and hide precharge latency. It uses differential CK/CK inputs and bidirectional DQS strobes aligned with read data edges and centered on write data for precise DDR timing.

Initialization requires strict sequencing: stable power with CKE high, ≥200μs clock stabilization, PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. The device supports programmable output drive strength and LVCMOS-compatible signaling.

Key Specifications

Pinout & Package

W947D2HBJX6E is housed in a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, 8mm × 10.5mm × 0.6mm, optimized for mobile PCB stacking and thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H128M16LF-6 IT and IS42S16160J-6BLI, W947D2HBJX6E delivers unique power efficiency via PASR, ATCSR, and Deep Power Down - critical for battery runtime in portable medical and consumer devices where thermal headroom and energy budget are constrained.

Availability

W947D2HBJX6E is available at Aetrix Electronics and suitable for smartphone main memory, wearable display buffers, portable medical monitors, and industrial handheld terminals requiring stable component supply across extended product lifecycles.

Supply support for W947D2HBJX6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR Flash, RAM, and trusted computing ICs.

W947D2HBJX6E belongs to Winbond's Mobile LPDDR family, designed specifically for low-voltage, low-power, high-density memory applications in portable electronics where thermal envelope and battery life are primary constraints.

FAQ

What is the package type and ball count for W947D2HBJX6E?

W947D2HBJX6E uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8mm × 10.5mm × 0.6mm. This x16 configuration matches the pinout shown in Section 3.1 of the official Winbond datasheet (Revision A01-003), with dedicated VDDQ/VSSQ rails and dual DQS strobes for reliable high-speed signaling.

Does W947D2HBJX6E support both CAS latency 2 and 3?

Yes, W947D2HBJX6E supports programmable CAS latency of CL=2 and CL=3 via Mode Register bits A4–A6. CL=2 is used at 200MHz (–5 speed grade), while CL=3 applies at 166MHz (–6) and 133MHz (–75). The selected latency must be consistent with clock frequency and system timing margins as defined in Section 6.2.2 of the datasheet.

How does Partial Array Self Refresh (PASR) function in W947D2HBJX6E?

W947D2HBJX6E implements PASR by allowing software to configure which memory subarrays remain active during self-refresh via Extended Mode Register settings. This reduces refresh current by skipping inactive banks - verified in Section 6.8 of the datasheet - delivering measurable standby power savings in applications with sparse memory access patterns.

What is the minimum initialization sequence required before W947D2HBJX6E accepts commands?

W947D2HBJX6E requires 11-step initialization: (1) power ramp with CKE high, (2) stable clock, (3) ≥200μs NOP/DESELECT, (4) PRECHARGE ALL, (5) tRP delay, (6) two AUTO REFRESH commands with tRFC gaps, (7) Mode Register Set, (8) tMRD delay, (9) Extended Mode Register Set, (10) tMRD delay, (11) ready state. This sequence is mandatory per Section 6.1 and cannot be abbreviated.

Is W947D2HBJX6E compatible with standard LPDDR controllers?

Yes, W947D2HBJX6E complies with JEDEC LPDDR (JESD209) specifications for command encoding, timing parameters, and electrical interface. Its LVCMOS-compatible signaling, differential CK/CK inputs, and bidirectional DQS strobes ensure interoperability with industry-standard LPDDR memory controllers - confirmed in Sections 2, 4.1, and 8.3 of the datasheet.