Winbond Electronics Corporation W947D2HBJX6E TR

Overview

W947D2HBJX6E TR from Winbond is a 128Mb mobile LPDDR SDRAM in 60-ball VFBGA (x16) package, operating at 1.7–1.95V VDD/VDDQ with CAS latency of 2 or 3, supporting burst lengths of 2/4/8/16 and sequential or interleave burst types for low-power mobile memory subsystems.

For engineers reviewing the W947D2HBJX6E TR datasheet, W947D2HBJX6E TR pinout, W947D2HBJX6E TR application, or W947D2HBJX6E TR equivalent, this device serves as a high-density, low-voltage synchronous DRAM optimized for battery-constrained portable electronics requiring deep power-down, partial array self-refresh, and clock stop capability.

Technical Context

This LPDDR SDRAM implements four independent internal banks enabling bank interleaving to hide precharge latency, with differential CK/CK inputs and bidirectional DQS strobes aligned to data edges for precise timing control during read/write operations.

It supports programmable output drive strength, auto temperature-compensated self-refresh (ATCSR), and partial array self-refresh (PASR) to reduce dynamic and standby power-critical for extended battery life in handheld devices where thermal management and voltage scaling are constrained.

Key Specifications

Pinout & Package

W947D2HBJX6E TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, 8 mm × 10.5 mm × 0.6 mm, compliant with JEDEC MO-245AB. Pin assignment follows LPDDR x16 ball map with dedicated VDDQ/VSSQ separation for noise isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H128M16LFCK-6 IT and IS42S16160J-6BLI, W947D2HBJX6E TR uniquely delivers industrial-temperature LPDDR performance with integrated power-saving modes in a compact 60-ball VFBGA - making it the only viable choice for space- and energy-constrained mobile embedded systems requiring sustained burst bandwidth and ultra-low standby current.

Availability

W947D2HBJX6E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, portable medical monitor frame buffers, automotive infotainment head units, industrial handheld scanners, and other applications requiring stable component supply with guaranteed long-term availability.

Supply support for W947D2HBJX6E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR Flash, PSRAM, and low-power DRAM for embedded and mobile markets.

W947D2HBJX6E TR belongs to Winbond's Mobile LPDDR family, designed specifically for battery-powered portable electronics needing high bandwidth per watt, extended temperature operation, and advanced power-state control without external PMIC dependency.

FAQ

What is the package type and dimensions of W947D2HBJX6E TR?

W947D2HBJX6E TR uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8 mm × 10.5 mm × 0.6 mm, with 0.5 mm ball pitch. It conforms to JEDEC MO-245AB and is optimized for space-constrained mobile PCB layouts. The package supports x16 data interface with dedicated VDDQ/VSSQ balls for I/O noise isolation, and its footprint matches standard LPDDR x16 routing guidelines.

Does W947D2HBJX6E TR support CAS latency of 2 and 3?

Yes, W947D2HBJX6E TR supports both CAS latency (CL) values of 2 and 3, selectable via the Mode Register (MR) bits A4–A6. CL=2 is used at 200 MHz (–5 speed grade) for minimal read access delay, while CL=3 provides timing margin at lower frequencies or elevated temperatures. The device requires proper MR initialization before operation, and CL setting directly affects tAC and tDQSS timing parameters in read/write cycles.

How does Partial Array Self-Refresh (PASR) function in W947D2HBJX6E TR?

W947D2HBJX6E TR implements Partial Array Self-Refresh (PASR) by allowing the controller to specify which memory subarrays remain active during self-refresh via Extended Mode Register (EMR) settings. This reduces refresh current draw by skipping inactive banks or rows - lowering IDD6 by up to 40% compared to full-array refresh. PASR is particularly effective in applications like UI rendering or sensor buffering where only portions of memory are actively used.

What are the key power-saving modes supported by W947D2HBJX6E TR?

W947D2HBJX6E TR supports three hierarchical power-saving modes: Power Down (CKE-driven, ~100 µA), Deep Power Down (DPD, ≤10 µA with register retention loss), and Clock Stop (CK/CK halted while maintaining state). All modes are entered synchronously except DPD exit, which is asynchronous. These features enable aggressive power gating in portable devices - for example, DPD can be activated between barcode scans in handheld scanners to maximize battery life.

Is W947D2HBJX6E TR compatible with standard LPDDR controllers?

Yes, W947D2HBJX6E TR is fully compliant with JEDEC JESD209-1 (LPDDR) specification and interoperates with standard LPDDR memory controllers found in ARM Cortex-A series SoCs, Qualcomm Snapdragon, MediaTek Helio, and NXP i.MX platforms. Its command set, timing parameters (tRP, tRFC, tMRD), and electrical interface (LVCMOS-compatible, differential CK/CK, bidirectional DQS) match LPDDR baseline requirements - no custom PHY tuning is required for integration.