Winbond Electronics Corporation W947D6HBHX5E

Overview

W947D6HBHX5E from Winbond is a 128Mb mobile LPDDR SDRAM with x16 data bus, 200MHz clock rate (CL=3), 1.7–1.95V VDD/VDDQ supply, and 4-bank architecture. It supports burst lengths of 2/4/8/16, sequential or interleave burst type, and operates across industrial temperature range (–40°C to +85°C) in a 60-ball VFBGA package. It is used in power-constrained mobile SoC memory subsystems requiring low-latency random access and deep power management.

For engineers reviewing the W947D6HBHX5E datasheet, W947D6HBHX5E pinout, W947D6HBHX5E application, or W947D6HBHX5E equivalent, key selection criteria include its LPDDR interface compliance, PASR/ATCSR self-refresh capabilities, programmable drive strength, clock stop support, and compatibility with mobile application processors requiring JEDEC-compliant 1.8V LPDDR timing.

Technical Context

This LPDDR SDRAM implements a synchronous double-data-rate interface with differential CK/CK inputs, bidirectional DQS strobes, and LVCMOS-compatible signaling. Its four independent banks enable bank interleaving to hide precharge latency, while mode register programming controls burst length, CAS latency (2 or 3), and burst type (sequential/interleave).

It integrates advanced power management features including Power Down Mode, Deep Power Down (DPD), Partial Array Self Refresh (PASR), and Automatic Temperature Compensated Self Refresh (ATCSR). Initialization requires strict sequencing: stable clocks after power-up, two auto-refresh commands, and separate base/extended mode register configuration before operation.

Key Specifications

Pinout & Package

W947D6HBHX5E uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8mm × 10.5mm × 0.6mm, optimized for space-constrained mobile PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H128M16LFCK-6 IT and IS42S16160F-6BLI, W947D6HBHX5E delivers superior power efficiency through PASR, ATCSR, and DPD - critical for battery-operated devices - while maintaining JEDEC LPDDR timing compliance and industrial temperature resilience.

Availability

W947D6HBHX5E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, automotive infotainment head units, industrial handheld terminals, and portable medical display systems requiring stable component supply and long-term lifecycle support.

Supply support for W947D6HBHX5E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for consumer, industrial, and automotive markets.

W947D6HBHX5E belongs to Winbond's Mobile LPDDR SDRAM product line, designed specifically for battery-powered portable electronics requiring high bandwidth, JEDEC-compliant low-voltage operation, and multi-level power-state management.

FAQ

What is the package type and dimensions of W947D6HBHX5E?

W947D6HBHX5E uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with dimensions of 8.0mm × 10.5mm × 0.6mm. This compact footprint supports high-density mobile PCB layouts and complies with JEDEC MO-245 standards. The ball pitch is 0.5mm, and the package supports reflow soldering per J-STD-020 requirements. W947D6HBHX5E is not offered in x32 or other ball-count variants - only this x16 60-ball configuration.

Does W947D6HBHX5E support CAS Latency 2 and CAS Latency 3?

Yes, W947D6HBHX5E supports both CAS Latency 2 and CAS Latency 3, selectable via bits A4–A6 in the Mode Register. At 200MHz (–5 speed grade), CL=3 is the validated timing setting; CL=2 is supported at lower frequencies. The device requires tAC (address-to-clock setup) and tCAC (CAS-to-access) timing to be configured accordingly in the memory controller. W947D6HBHX5E does not support CL=1 or fractional latencies.

How does Partial Array Self Refresh (PASR) function in W947D6HBHX5E?

In W947D6HBHX5E, PASR allows the memory controller to specify which sub-arrays remain active during self-refresh using Extended Mode Register bits. Supported configurations include full array, half array, quarter array, and eighth array refresh. This reduces refresh current proportionally - e.g., quarter-array mode cuts self-refresh power by ~75% versus full-array mode. PASR is enabled only when ATCSR is also active and requires proper initialization sequence per the W947D6HBHX5E datasheet.

What are the voltage requirements for W947D6HBHX5E VDD and VDDQ?

W947D6HBHX5E requires VDD and VDDQ to be supplied simultaneously within 1.7V to 1.95V, with ±3% tolerance recommended. Both rails must ramp monotonically and settle within 100ms of power-on. VDD powers core logic and command decoders; VDDQ powers I/O buffers separately to isolate switching noise. The device does not support split-rail operation - VDD and VDDQ must track within 50mV during operation. W947D6HBHX5E will not initialize if either rail falls outside specification during power-up sequencing.

Can W947D6HBHX5E be used as a drop-in replacement for W947D2HB?

No, W947D6HBHX5E is not a drop-in replacement for W947D2HB. Although both share the same 128Mb LPDDR architecture and 60-ball x16 package, W947D6HBHX5E is the –5 speed grade (200MHz/CL=3), whereas W947D2HB is the –75 grade (133MHz/CL=2). Their timing parameters, AC characteristics, and initialization sequences differ. Interchangeability requires full validation of tRP, tRFC, tMRD, and burst timing margins in the target system - W947D6HBHX5E cannot be substituted without controller firmware and timing register updates.