Winbond Electronics Corporation W947D6HBHX5E TR

Overview

W947D6HBHX5E TR from Winbond is a 128Mb mobile LPDDR SDRAM in 60-ball VFBGA (x16) package, operating at 1.7–1.95V supply with 200MHz clock rate (−5 speed grade), CAS latency of 2 or 3, and four internal banks for interleaved access-designed for low-power mobile applications including smartphones and portable media players.

For engineers reviewing the W947D6HBHX5E TR datasheet, W947D6HBHX5E TR pinout, W947D6HBHX5E TR application, or W947D6HBHX5E TR equivalent, key selection considerations include its LPDDR x16 interface, PASR/ATCSR power management features, 64ms refresh requirement, and compatibility with mobile SoC memory controllers requiring burst lengths of 2/4/8/16 and sequential or interleave burst types.

Technical Context

This LPDDR SDRAM implements differential clock inputs (CK/CK̄), bidirectional data strobes (UDQS/LDQS), and programmable output drive strength to support high-speed, low-noise signaling in battery-constrained systems. It uses a 4-bank architecture with bank address pins BA0/BA1 and auto-precharge control via A10/AP.

Initialization requires strict sequencing: power ramp with CKE high, ≥200μs stable clocks before PRECHARGE ALL, two AUTO REFRESH commands, then Mode Register and Extended Mode Register programming. The device supports Deep Power Down (DPD) and Clock Stop modes to minimize standby current during idle periods.

Key Specifications

Pinout & Package

Package: 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6mm × 8mm × 0.6mm, x16 data width (W947D6HB variant).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H128M16LFCK-6 IT:F and IS42S16160J-6BLI, W947D6HBHX5E TR delivers superior energy efficiency per MB/s in mobile SoC designs due to integrated PASR, ATCSR, and Deep Power Down-features absent in both alternatives-making it optimal for battery-limited, thermally constrained applications where memory bandwidth must coexist with multi-day runtime.

Availability

W947D6HBHX5E TR is available at Aetrix Electronics and suitable for smartphone application processors, portable media player buffers, industrial handheld terminals, wearable health monitors, and other embedded systems requiring stable component supply with extended temperature support and low-power memory performance.

Supply support for W947D6HBHX5E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, flash memory, and trusted computing ICs, with global manufacturing and quality certifications.

The W947D6HBHX5E TR belongs to Winbond's Mobile LPDDR SDRAM product line, engineered specifically for power-sensitive portable electronics that demand high bandwidth, small footprint, and advanced power-state agility without sacrificing JEDEC compliance.

FAQ

What is the exact memory organization and density of the W947D6HBHX5E TR?

The W947D6HBHX5E TR is a 128Mb (134,217,728-bit) mobile LPDDR SDRAM configured as 16M words × 16 bits (x16). Its physical layout comprises four independent 32Mb banks, each organized as 8,192 rows × 512 columns. This structure enables bank interleaving and supports burst accesses of length 2, 4, 8, or 16 without row reactivation overhead. The W947D6HBHX5E TR achieves this density in a compact 60-ball VFBGA package measuring 6mm × 8mm.

Does the W947D6HBHX5E TR support both CAS latency 2 and CAS latency 3?

Yes, the W947D6HBHX5E TR supports configurable CAS latency of 2 or 3, set via bits A4–A6 in the Mode Register during initialization. CL=2 is used for highest-performance operation at 200MHz (−5 speed grade), while CL=3 provides additional timing margin for marginal signal integrity or voltage conditions. The device does not support CL=2.5 or fractional latencies-the W947D6HBHX5E TR strictly implements integer CL values per JEDEC LPDDR specification.

What power-saving features are implemented in the W947D6HBHX5E TR?

The W947D6HBHX5E TR integrates three key power-saving mechanisms: Partial Array Self Refresh (PASR), which refreshes only active memory sub-arrays; Automatic Temperature Compensated Self Refresh (ATCSR), which scales refresh rate with die temperature; and Deep Power Down (DPD) mode, reducing standby current to under 10µA. Additionally, the W947D6HBHX5E TR supports standard Power Down and Clock Stop modes-all controllable via standard LPDDR command sequences without external hardware changes.

Is the W947D6HBHX5E TR compatible with standard DDR2 or DDR3 controllers?

No, the W947D6HBHX5E TR is not compatible with DDR2 or DDR3 controllers. It implements the JEDEC LPDDR (Low Power DDR) standard, featuring differential clocks (CK/CK̄), source-synchronous DQS strobes, and command encoding distinct from DDR2/DDR3. Controllers must explicitly support LPDDR protocol-including initialization sequence, mode register definitions, and power-state transitions-to interface with the W947D6HBHX5E TR. Using a DDR2/DDR3 controller will result in communication failure.

What is the operating temperature range certified for the W947D6HBHX5E TR?

The W947D6HBHX5E TR is specified for extended temperature operation from −25°C to +85°C, as documented in the official Winbond datasheet revision A01-003. An industrial-grade variant (W947D6HBHX5I TR) supports −40°C to +85°C. Both variants use the same 60-ball VFBGA package and electrical specifications; only the temperature screening differs. The W947D6HBHX5E TR's thermal performance is validated across this full range, including PASR and ATCSR functionality.