Winbond Electronics Corporation W947D6HBHX6E

Overview

W947D6HBHX6E from Winbond is a 128Mb mobile LPDDR SDRAM with x16 data bus, 200MHz clock rate (CL=3), 1.7–1.95V VDD/VDDQ supply, and 4-bank architecture. It supports burst lengths of 2/4/8/16, sequential or interleave burst type, and operates across -25°C to +85°C for mobile embedded memory applications.

For engineers reviewing the W947D6HBHX6E datasheet, W947D6HBHX6E pinout, W947D6HBHX6E application, or W947D6HBHX6E equivalent, key selection criteria include its LPDDR-specific low-power modes (Deep Power Down, PASR, ATCSR), differential CK/CK clock interface, bidirectional DQS strobes, and VFBGA-60 package compatibility with mobile SoC memory subsystems.

Technical Context

This LPDDR SDRAM implements four independent memory banks with bank interleaving to hide precharge latency. Its command decoder accepts standard LPDDR commands (ACTIVE, READ, WRITE, PRECHARGE, AUTO REFRESH, MODE REGISTER SET) synchronized to differential CK/CK edges and gated by CKE.

Initialization requires strict sequencing: 200μs stable clocks after power-up, PRECHARGE ALL, two AUTO REFRESH cycles, then Mode Register and Extended Mode Register programming. CAS latency is fixed at CL=3 for W947D6HBHX6E (denoted by "-6" suffix), and burst termination is supported via BST command.

Key Specifications

Pinout & Package

W947D6HBHX6E uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, 8mm × 10.5mm × 0.6mm, compliant with JEDEC MO-229. Pin assignments follow LPDDR x16 ball map with dedicated VDDQ/VSSQ rails for I/O noise isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H128M16LFCK-6 IT:F and EM68B16CWQ-6G, W947D6HBHX6E delivers higher peak bandwidth (1.6GB/s vs. 1.33GB/s) and lower Deep Power Down current, making it optimal for premium mobile devices prioritizing performance-per-milliwatt and thermal efficiency.

Availability

W947D6HBHX6E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, wearable OS kernel memory, and IoT edge AI inference cache requiring stable component supply and long-lifecycle support.

Supply support for W947D6HBHX6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for consumer, industrial, and communications markets.

W947D6HBHX6E belongs to Winbond's Mobile LPDDR SDRAM product line, designed specifically for battery-constrained portable electronics requiring high bandwidth, multi-level power management, and JEDEC-compliant LPDDR interface compatibility.

FAQ

What does the "-6" suffix in W947D6HBHX6E indicate?

The "-6" suffix in W947D6HBHX6E specifies a 200MHz maximum clock frequency with CAS Latency = 3 (CL=3). This is confirmed in the device's datasheet revision A01-003, where clock rate options are explicitly tied to suffixes: "-5" = 200MHz CL=2, "-6" = 200MHz CL=3, and "-75" = 133MHz CL=2. W947D6HBHX6E is therefore optimized for systems requiring balanced latency and bandwidth at 1.8V operation.

Does W947D6HBHX6E support both sequential and interleave burst types?

Yes, W947D6HBHX6E supports both sequential and interleave burst types, selectable via bit A3 in the Mode Register. The datasheet's Mode Register Definition table (Section 6.2.2) confirms A3=0 configures sequential bursts and A3=1 selects interleave bursts. This flexibility allows the host controller to optimize access patterns for either linear streaming or scattered memory reads typical in multimedia workloads.

Is W947D6HBHX6E pin-compatible with other Winbond LPDDR parts like W947D2HB?

No, W947D6HBHX6E is not pin-compatible with W947D2HB. Although both belong to the same family and share the x16 configuration, W947D2HB is a 133MHz (–75 suffix) variant with different AC timing requirements and is specified for use in 90-ball VFBGA (x32) packages per the datasheet's ordering information and pin configuration sections. W947D6HBHX6E uses the 60-ball VFBGA package and is strictly x16-only.

What is the minimum VDD/VDDQ voltage required for W947D6HBHX6E operation?

W947D6HBHX6E requires a minimum supply voltage of 1.7V for both VDD (core) and VDDQ (I/O), as stated in Section 2 "Features" of the datasheet. Operation below 1.7V is outside specification and may result in undefined behavior, including failed initialization, data corruption, or inability to enter low-power modes such as Deep Power Down.

How does Partial Array Self Refresh (PASR) function in W947D6HBHX6E?

In W947D6HBHX6E, PASR allows selective refresh of only active memory subarrays-configurable via Extended Mode Register bits-reducing self-refresh current by up to 50% compared to full-array refresh. This feature is particularly valuable in mobile applications where memory utilization is sparse (e.g., background OS tasks), directly extending battery life without compromising data retention integrity.