Winbond Electronics Corporation W948D2FBJX5E

Overview

W948D2FBJX5E from Winbond is a 256Mb mobile LPDDR SDRAM with x16 data bus, 1.7–1.95V VDD/VDDQ supply, CAS latency 2 or 3, and 64 ms refresh period-designed for low-power mobile applications requiring burst-oriented memory access with partial array self-refresh and temperature-compensated refresh.

For engineers reviewing the W948D2FBJX5E datasheet, W948D2FBJX5E pinout, W948D2FBJX5E application, or W948D2FBJX5E equivalent, this device supports LPDDR x16 interface timing, programmable output drive strength, deep power-down mode, clock stop capability, and four-bank interleaving for mobile SoC memory subsystems.

Technical Context

This LPDDR SDRAM implements differential CK/CK inputs for precise clock edge sampling, bidirectional DQS strobes aligned with read data and centered on write data, and dual-mode burst (sequential or interleave) controlled via Mode Register bits A3 and A0–A2. It uses internal bank addressing (BA0/BA1) and row/column address multiplexing with A10/AP enabling auto-precharge.

Power management includes three distinct low-power states: Power Down (CKE-driven), Deep Power Down (DPD), and Self Refresh-with ATCSR adjusting refresh rate based on die temperature and PASR allowing selective bank refresh to reduce current draw during partial memory usage.

Key Specifications

Pinout & Package

W948D2FBJX5E is housed in a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch, measuring 5.0 mm × 8.0 mm × 0.6 mm. Pin assignments follow LPDDR x16 ball mapping per datasheet Section 3.1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR SDRAM applications.

Compared with MT46H32M16LFCK-6 IT:F and IS42S16160J-6BLI, W948D2FBJX5E uniquely combines LPDDR protocol compliance, industrial temperature support, PASR/ATCSR power optimization, and 60-ball VFBGA packaging-making it the only viable option for next-generation ultra-thin mobile and automotive memory subsystems.

Availability

W948D2FBJX5E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, automotive infotainment head unit, portable medical imaging display, and industrial HMI systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W948D2FBJX5E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for consumer, industrial, and automotive markets.

W948D2FBJX5E belongs to Winbond's Mobile LPDDR SDRAM product line, engineered specifically for battery-constrained portable devices demanding high bandwidth, ultra-low standby power, and robust thermal performance across wide ambient conditions.

FAQ

What is the pin count and package type of W948D2FBJX5E?

W948D2FBJX5E uses a 60-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch, measuring 5.0 mm × 8.0 mm × 0.6 mm. This matches the LPDDR x16 ball assignment specified in the official datasheet Section 3.1 and is distinct from the 90-ball x32 variant used in W948D6FB.

Does W948D2FBJX5E support CAS latency 2 and 3?

Yes, W948D2FBJX5E supports programmable CAS latency of CL=2 or CL=3 via Mode Register bits A4–A6. CL=2 enables 5 ns tCK operation at 200 MHz, while CL=3 allows relaxed timing margins at lower frequencies such as 166 MHz or 133 MHz-providing flexibility for system-level timing closure.

What power-saving features does W948D2FBJX5E include?

W948D2FBJX5E integrates three key power-saving features: Deep Power Down (DPD) mode (<1 µA IDD), Partial Array Self Refresh (PASR) for selective bank refresh, and Automatic Temperature Compensated Self Refresh (ATCSR) that scales refresh rate with die temperature-collectively reducing average system memory power in mobile and automotive applications.

Is W948D2FBJX5E compatible with standard DDR2 or DDR3 controllers?

No, W948D2FBJX5E is an LPDDR (Low Power DDR) SDRAM and is not electrically or protocol-compatible with DDR2 or DDR3 controllers. It requires an LPDDR-specific memory controller supporting differential CK/CK, bidirectional DQS, and LPDDR command encoding-including CKE-driven power states and extended mode register configuration.

What is the maximum clock frequency supported by W948D2FBJX5E?

W948D2FBJX5E supports up to 200 MHz clock frequency (tCK = 5 ns) when configured for CAS latency 2. This corresponds to a data transfer rate of 400 MT/s per pin. The device also supports 166 MHz (–6 speed grade) and 133 MHz (–75 speed grade) for designs prioritizing timing margin or lower power.